Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRS2103STRPBF

Part No.:
IRS2103STRPBF
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRS2103STRPBF.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,515

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRS2103STRPBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed to independently control N-channel MOSFETs or IGBTs in high-side and low-side configurations. It supports up to 600 V floating channel operation, delivers ±130 mA / +270 mA peak output current, features 680 ns / 150 ns typical turn-on/turn-off propagation delay, and includes internal 520 ns deadtime for shoot-through prevention - used in motor inverters, SMPS half-bridge stages, and induction heating circuits.

For engineers reviewing the IRS2103STRPBF datasheet, IRS2103STRPBF pinout, IRS2103STRPBF application, or IRS2103STRPBF equivalent, key selection criteria include bootstrap-compatible floating channel design, 10–20 V gate drive supply range, 3.3 V/5 V/15 V logic compatibility, undervoltage lockout thresholds (8.2 V typ.), and matched propagation delays between channels.

Technical Context

The IRS2103STRPBF integrates a high-voltage level shifter and latch-immune CMOS logic to enable robust operation with VS offset up to 600 V. Its dual-channel architecture uses independent HVIC-based drivers: the high-side output (HO) is in-phase with HIN, while the low-side output (LO) is out-of-phase with LIN.

Internal cross-conduction prevention logic enforces fixed 520 ns deadtime between LO turn-off and HO turn-on, and vice versa. Propagation delays are tightly matched (≤60 ns skew), and dV/dt immunity ensures stable operation under fast transient conditions on the VS node.

Key Specifications

ParameterValue and Actual Design Meaning
Max. Floating Voltage (VB)600 V - enables direct driving of high-side switches in 400 V DC bus applications like PFC and motor drives
Output Current (IO+/IO−)130 mA / 270 mA - sufficient to rapidly charge/discharge 1 nF gate capacitance in <100 ns
Propagation Delay (ton/toff)680 ns / 150 ns - ensures precise timing control in 100 kHz–500 kHz switching converters
Deadtime520 ns - prevents simultaneous conduction in half-bridge topologies without external timing circuitry
Logic Supply Range (VCC)10 V–20 V - supports direct connection to standard gate driver bias rails without regulation
UVLO ThresholdsVCCUV+ = 8.9 V, VCCUV− = 8.2 V - provides hysteresis to avoid oscillation during brown-out conditions
Input Logic Compatibility3.3 V, 5 V, and 15 V - allows interface with microcontrollers, DSPs, and isolated gate drivers

Pinout & Package

IRS2103STRPBF is housed in an 8-lead SOIC package (RoHS-compliant, surface-mount), with thermal resistance RthJA = 200 °C/W and maximum junction temperature of 150 °C.

Pin/TerminalCircuit RoleDesign Meaning
VCCLow-side and logic supply inputProvides power for internal logic and low-side driver; must be decoupled near pin
HINHigh-side logic inputIn-phase control signal for HO output; compatible with CMOS/LSTTL levels down to 3.3 V
LINLow-side logic inputOut-of-phase control signal for LO output; complements HIN for synchronous half-bridge operation
COMLow-side return referenceCommon ground for logic, low-side driver, and bootstrap capacitor discharge path
VBHigh-side floating supplyConnects to bootstrap capacitor positive terminal; supplies high-side driver stage
HOHigh-side gate drive outputDrives gate of high-side N-MOSFET/IGBT; referenced to VS, not COM
VSHigh-side floating returnSwitching node connection; serves as reference for HO and VB supply
LOLow-side gate drive outputDrives gate of low-side N-MOSFET/IGBT; referenced to COM

Key Features

FeatureDesign Value
Floating channel with bootstrap capabilityEnables high-side drive without isolated supplies; supports VS transients up to 50 V/ns
Matched propagation delay≤60 ns skew between HO and LO paths ensures symmetrical switching timing
Integrated deadtime generationFixed 520 ns internal deadtime eliminates need for external timing components
dV/dt immune level-shiftingPrevents false triggering during fast VS node transitions in hard-switching topologies
3.3 V–15 V logic compatibilityDirect interface with modern MCUs and digital controllers without level-shifting circuitry

Applications

Motor Inverter StageInduction Heating Half-Bridge

Use Scenario: Driving complementary N-channel MOSFETs in 3-phase BLDC inverter leg with 400 V DC bus.

IC Role / Device Role / Timing Role: Half-bridge gate driver providing isolated high-side and referenced low-side outputs with synchronized deadtime.

Use Value: Eliminates external deadtime circuitry and reduces PCB area by 35% vs. discrete driver solutions.

Use Scenario: Controlling resonant half-bridge in 20–100 kHz induction cooktop power stage.

IC Role / Device Role / Timing Role: High-speed gate driver ensuring precise zero-voltage switching (ZVS) timing at variable frequency.

Use Value: 150 ns turn-off delay enables accurate ZVS window control across full load range.

Server PSU LLC Resonant ConverterIndustrial UPS Half-Bridge

Use Scenario: Gate driving in primary-side half-bridge of 1–3 kW server power supply using LLC topology.

IC Role / Device Role / Timing Role: Dual-channel driver delivering matched timing and 600 V blocking capability for Si MOSFETs.

Use Value: 680 ns turn-on delay supports tight timing control required for 300–700 kHz resonant operation.

Use Scenario: High-reliability half-bridge in 5–10 kVA uninterruptible power supply with 600 V DC link.

IC Role / Device Role / Timing Role: Robust gate driver with UVLO hysteresis and thermal derating support for continuous industrial operation.

Use Value: Junction temperature rating of 150 °C and 200 °C/W RthJA enable operation at 70 °C ambient without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR2103SSame functional spec, but PDIP package (not SOIC); higher RthJA (125 °C/W) and lower PD (1.0 W)Suitable for prototyping or through-hole assembly; less suitable for high-density SMT productionSelect IR2103S only when manual soldering or socket-based evaluation is required
IRS2003STRPBFHigher IO+ (200 mA), wider VCC range (10–25 V), but no internal deadtime; requires external timingBetter for high-current gate drive where deadtime must be dynamically adjustedChoose IRS2003STRPBF when adaptive deadtime control or >200 mA peak drive is mandatory

Compared with IR2103S and IRS2003STRPBF, the IRS2103STRPBF uniquely balances SOIC manufacturability, integrated 520 ns deadtime, and 600 V capability - making it optimal for cost-sensitive, high-volume half-bridge designs where layout simplicity and timing reliability are critical.

Availability

IRS2103STRPBF is available at Aetrix Electronics and suitable for motor inverters, induction heating systems, and server PSUs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRS2103STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRS2103STRPBF belongs to Infineon's high-voltage gate driver product line, engineered specifically for reliable half-bridge switching in AC-DC, DC-AC, and resonant converter applications up to 600 V bus voltage.

FAQ

What is the recommended bootstrap capacitor value for IRS2103STRPBF?

A 0.1 µF ceramic capacitor rated ≥25 V is recommended between VB and VS pins. This value ensures sufficient charge replenishment during 100 kHz switching with 50% duty cycle, assuming typical gate charge of 50 nC per switch and 10 Ω gate resistor. Larger values (e.g., 0.22 µF) improve margin under high-duty-cycle or high-frequency operation.

Can IRS2103STRPBF drive IGBTs directly?

Yes - IRS2103STRPBF can directly drive IGBTs with gate-emitter threshold voltages ≤5 V and total gate charge ≤200 nC. Its 270 mA sink current and 130 mA source current support turn-on/turn-off times under 200 ns for 600 V/25 A IGBTs. External gate resistors must be selected to limit peak current within device ratings.

Does IRS2103STRPBF require external pull-down resistors on HIN and LIN inputs?

No - internal weak pull-downs are present on both HIN and LIN inputs, ensuring defined logic state during MCU reset or unpowered states. However, for noise-critical environments, 10 kΩ external pull-downs are recommended to reduce susceptibility to EMI-induced glitches on long traces.

How does the undervoltage lockout (UVLO) behave during startup?

IRS2103STRPBF activates UVLO when VCC falls below 8.2 V (negative-going threshold) and releases it at 8.9 V (positive-going). During startup, outputs remain disabled until VCC exceeds 8.9 V, preventing partial drive that could cause shoot-through. The 0.7 V hysteresis avoids oscillation during marginal supply conditions.

IRS2103STRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 20V
Logic Voltage - VIL, VIH:
0.8V, 2.5V
Current - Peak Output (Source, Sink):
290mA, 600mA
Input Type:
Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
70ns, 35ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

IRS2103STRPBF FAQ

1.How can I place an order for IRS2103STRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRS2103STRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRS2103STRPBF reliable?

The price and inventory of IRS2103STRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRS2103STRPBF is usually 5 days.

3.What payment methods are accepted for IRS2103STRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRS2103STRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRS2103STRPBF?

IRS2103STRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRS2103STRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRS2103STRPBF?

For technical support, including IRS2103STRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRS2103STRPBF requirements.

6.How does Aetrix verify that IRS2103STRPBF is sourced from the original manufacturer or authorized distributors?

All IRS2103STRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRS2103STRPBF meets industry standards.

7.What is the process for return or replacement of IRS2103STRPBF?

All IRS2103STRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRS2103STRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRS2103STRPBF part is unused and in its original packaging.

Return procedure for IRS2103STRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRS2103STRPBF Tags

  • IRS2103STRPBF
  • IRS2103STRPBF PDF
  • IRS2103STRPBF Datasheet
  • IRS2103STRPBF Specifications
  • IRS2103STRPBF Images
  • Infineon Technologies
  • Infineon Technologies IRS2103STRPBF
  • Buy IRS2103STRPBF
  • IRS2103STRPBF Price
  • IRS2103STRPBF Distributor
  • IRS2103STRPBF Supplier
  • IRS2103STRPBF Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER