Infineon Technologies IRS2108STRPBF

Overview

IRS2108STRPBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (up to +600 V) and low-side output channels, 220 ns typical turn-on propagation delay, 200 ns typical turn-off delay, and integrated cross-conduction prevention logic. It is used in motor control inverters, DC-DC converters, and induction heating systems requiring robust bootstrap-based high-side drive.

For engineers reviewing the IRS2108STRPBF datasheet, IRS2108STRPBF pinout, IRS2108STRPBF application, or IRS2108STRPBF equivalent, key selection criteria include floating channel operation up to +600 V, 10–20 V gate drive supply range, 3.3/5/15 V logic compatibility, undervoltage lockout on both channels, and matched propagation delays between HO and LO outputs.

Technical Context

The IRS2108STRPBF integrates a high-voltage level shifter for the floating high-side channel and uses latch-immune CMOS technology to withstand dV/dt transients up to 50 V/ns. Its internal deadtime is fixed at 540 ns, unlike the IRS21084 variant which supports programmable deadtime via an external RDT resistor.

Logic inputs (HIN/LIN) are referenced to COM (not VSS), and the device operates with separate logic ground (COM) and power ground (VS), tolerating ±5 V offset. The high-side output (HO) is in-phase with HIN; low-side output (LO) is out-of-phase with LIN - enabling complementary PWM control without external inversion logic.

Key Specifications

Pinout & Package

IRS2108STRPBF is supplied in an 8-lead SOIC package with exposed pad (RoHS-compliant, Pb-free). Pin assignments follow standard IR half-bridge driver layout optimized for thermal dissipation and layout symmetry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2104STRPBF, IRS2108STRPBF adds integrated high-side drive and fixed deadtime - reducing BOM count and layout complexity. Versus IR2110STRPBF, it trades peak current and package size for tighter timing control and smaller footprint in mid-power (<500 W) applications.

Availability

IRS2108STRPBF is available at Aetrix Electronics and suitable for motor control inverters, induction heating systems, and industrial DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRS2108STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IRS21xx family was designed specifically for cost-sensitive, high-reliability half-bridge applications in consumer and industrial power electronics - emphasizing integration, noise immunity, and ease of PCB layout.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IRS2108STRPBF is rated for up to 50 V/ns dV/dt on the VS pin under specified test conditions (8-lead PDIP package). This rating ensures reliable level-shifting operation during fast high-side switching events without false triggering or latch-up, making it suitable for hard-switched topologies up to 100 kHz.

Can IRS2108STRPBF drive SiC MOSFETs?

Yes - its 290 mA source / 600 mA sink peak output current, 220 ns propagation delay, and 50 V/ns dV/dt immunity meet minimum requirements for driving common 1200 V SiC MOSFETs with ≤5 nC gate charge. However, external gate resistors must be selected to limit di/dt and suppress ringing due to SiC's faster switching speed.

Is a bootstrap diode required for high-side operation?

Yes - a fast recovery or Schottky bootstrap diode (e.g., 1N4148W or BAS21) must be placed between VCC and VB to charge the bootstrap capacitor during LO conduction. The diode must withstand reverse voltage ≥ VCC and conduct forward current sufficient to replenish capacitor losses at the operating frequency.

Does IRS2108STRPBF support 3.3 V microcontroller interfaces directly?

Yes - the HIN and LIN inputs are fully compatible with 3.3 V CMOS logic levels (VIH ≥ 2.5 V, VIL ≤ 0.8 V), with input bias currents below 20 µA. No level-shifting circuitry is required when interfacing with STM32, PIC32, or ESP32 microcontrollers operating at 3.3 V.