International Test Instruments Corporation IRS2109PBF

Overview

IRS2109PBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed to control N-channel MOSFETs and IGBTs in high-side/low-side configurations. It features 600 V floating channel capability, 750 ns typical turn-on propagation delay, 200 ns typical turn-off delay, and 540 ns internal deadtime. It operates with 10–20 V gate drive supply and supports 3.3 V/5 V/15 V logic inputs in motor inverter and SMPS applications.

For engineers reviewing the IRS2109PBF datasheet, IRS2109PBF pinout, IRS2109PBF application, or IRS2109PBF equivalent, key selection criteria include bootstrap-compatible floating channel operation up to +600 V, matched HS/LS propagation delays, undervoltage lockout on both channels, cross-conduction prevention logic, and SOIC-8 package compatibility for compact power stage layouts.

Technical Context

The IRS2109PBF integrates a high-voltage level shifter and latch-immune CMOS logic to enable robust high-side gate driving referenced to a floating VS node. Its HVIC monolithic construction tolerates −5 V to +600 V offset voltage at VS with 50 V/ns dV/dt immunity.

It implements independent UVLO on VCC and VB (bootstrap) supplies, programmable shutdown via SD input, and in-phase HO output relative to IN. The 8-lead SOIC package uses COM as shared low-side return and logic ground-no separate VSS pin (unlike IRS21094).

Key Specifications

Pinout & Package

IRS2109PBF is housed in an 8-lead SOIC package (RoHS-compliant, surface-mount, 150 °C max junction temperature). Thermal resistance R_thJA = 200 °C/W under standard board-mounted conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2104PBF, IRS2109PBF adds critical shutdown functionality and tighter delay matching; versus IR2110PBF, it trades pin count and peak current for integrated deadtime and smaller footprint-ideal for space-constrained, medium-power half-bridge designs.

Availability

IRS2109PBF is available at Aetrix Electronics and suitable for motor inverter stages, DC-DC resonant converters, and solar microinverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRS2109PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001 standards.

The IRS21xx family targets high-voltage gate driving in energy-efficient power conversion systems, emphasizing ruggedness, timing precision, and bootstrap simplicity for cost-sensitive industrial and renewable energy applications.

FAQ

What is the maximum allowable dV/dt at the VS pin?

The IRS2109PBF is rated for 50 V/ns dV/dt immunity at the VS pin under 8-lead PDIP conditions, verified per datasheet Absolute Maximum Ratings. This ensures reliable operation during fast-switching events in hard-switched topologies without false triggering or latch-up, provided PCB layout minimizes parasitic inductance in the VS loop.

Can IRS2109PBF drive IGBTs directly?

Yes-IRS2109PBF delivers 120 mA source and 250 mA sink peak output current into 1000 pF loads, sufficient to drive small-to-medium IGBTs (e.g., ≤50 A, 600 V) with gate charge ≤100 nC. For larger IGBTs, external gate resistors or buffer stages are recommended to maintain <220 ns rise time and avoid excessive Miller plateau dwell.

Is a bootstrap diode required for VB supply?

Yes-a fast recovery or Schottky diode (e.g., 1N4148 or BAT54) is mandatory between VCC and VB to charge the bootstrap capacitor during LO conduction. The diode must withstand ≥20 V reverse voltage and support ≥100 mA average current; improper selection causes VB droop and UVLO triggering during high-duty-cycle operation.

Does IRS2109PBF support 3.3 V microcontroller interfaces?

Yes-its VIH threshold is 2.5 V minimum and VIL is 0.8 V maximum, fully compatible with 3.3 V CMOS logic. Input bias current remains ≤20 µA at 5 V, ensuring minimal loading on MCU GPIOs; no level-shifting circuitry is needed for direct interfacing with STM32, PIC, or ESP32 controllers.