Infineon Technologies IRS2153DSTRPBF

Overview

IRS2153DSTRPBF from Infineon Technologies is a self-oscillating 600 V half-bridge gate driver IC with integrated bootstrap FET, 50% max duty cycle, 1.1 µs typical deadtime, and 15.4 V internal VCC zener clamp-designed for resonant LLC and CFL ballast control in AC/DC offline converters.

For engineers reviewing the IRS2153DSTRPBF datasheet, IRS2153DSTRPBF pinout, IRS2153DSTRPBF application, or IRS2153DSTRPBF equivalent, key selection criteria include oscillator programmability via RT/CT, non-latched CT-pin shutdown at 1/6×VCC, ±50 V/ns dV/dt immunity, and SOIC-8 package compatibility with high-voltage floating output stage requirements.

Technical Context

The IRS2153DSTRPBF implements a CMOS-based 555-timer–like oscillator front-end driving dual high- and low-side outputs through HVIC-level-shifted stages. Its internal deadtime generator enforces 1.1 µs minimum separation between HO and LO transitions to prevent shoot-through in half-bridge topologies.

It features micropower startup (130 µA typ. ICC), UVLO hysteresis (2.0 V), and a dedicated CT pin that triggers non-latched shutdown when voltage drops below 2.3 V-enabling robust fault recovery without external latch circuitry in lamp ignition or resonant converter applications.

Key Specifications

Pinout & Package

IRS2153DSTRPBF is housed in an 8-lead SOIC package (SO8) with standard 1.27 mm pitch, surface-mount compatible, and rated for industrial temperature range (−40 °C to +125 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-oscillating half-bridge driver applications.

Compared with IRS2153DSTRPBF, IRS2153DPBF offers identical functionality in through-hole form but lacks SMT scalability, while FAN7382MX trades integrated oscillation for greater timing flexibility and higher drive capability-making it better suited for externally clocked, high-current applications.

Availability

IRS2153DSTRPBF is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, LLC resonant converters, induction cooktop inverters, and resonant LED drivers requiring stable component supply across industrial and consumer power electronics programs.

Supply support for IRS2153DSTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRS2153D series belongs to Infineon's high-voltage gate driver product line, engineered specifically for cost-sensitive, self-oscillating half-bridge applications in lighting and offline AC/DC conversion.

FAQ

What is the purpose of the CT pin shutdown threshold at 1/6 × VCC?

The CT pin voltage threshold of 2.3 V (≈1/6 × VCC at 13.8 V) initiates non-latched shutdown to protect against overvoltage, overtemperature, or overload conditions. When triggered, the driver halts switching until CT voltage recovers above threshold-enabling automatic restart without external reset circuitry, ideal for lamp ignition and thermal foldback in ballasts.

Can IRS2153DSTRPBF drive both N-channel and P-channel high-side MOSFETs?

No-it is designed exclusively for N-channel high-side MOSFETs using bootstrap gate drive. The internal level shifter and VB pin require a floating source node (VS) and bootstrap capacitor to generate gate voltage above the source. Driving P-channel devices would require reverse logic polarity and external high-side bias, which this IC does not support.

How does the internal bootstrap FET affect external component selection?

The integrated bootstrap FET eliminates the need for an external bootstrap diode, reducing component count and PCB area. However, the VB pin still requires a 0.1–1 µF ceramic capacitor between VB and VS, sized per load capacitance and switching frequency. Typical values are 0.22 µF for 100 kHz operation with 1 nF gate load.

Is the 50% maximum duty cycle programmable or fixed?

The 50% maximum duty cycle is fixed by internal oscillator architecture and cannot be adjusted. It results from the symmetric charging/discharging of the CT capacitor between upper (9.32 V) and lower (4.66 V) thresholds. This ensures balanced half-bridge operation and prevents transformer core saturation in resonant topologies.