International Test Instruments Corporation IRS21856SPBF

Overview

IRS21856SPBF from Infineon Technologies is a high-voltage, high-speed MOSFET gate driver IC for half-bridge configurations, featuring 600 V high-side floating capability, 2.5 A peak sink/source current, and integrated bootstrap diode. It drives N-channel MOSFETs in motor control inverters, DC-DC converters, and induction heating systems.

For engineers reviewing the IRS21856SPBF datasheet, IRS21856SPBF pinout, IRS21856SPBF application, or IRS21856SPBF equivalent, key selection criteria include high-side voltage rating, propagation delay matching (typ. 120 ns), undervoltage lockout thresholds (VCC = 10.1 V / VBS = 9.2 V), and thermal shutdown behavior.

Technical Context

The IRS21856SPBF integrates independent high-side and low-side drivers with matched propagation delays and dead-time control via external resistor. Its floating high-side section uses level-shift technology to sustain 600 V DC bus potential while maintaining logic-level input compatibility.

It employs non-latching UVLO on both VCC and VBS rails, with hysteresis of 0.7 V (VCC) and 0.5 V (VBS), and features built-in shoot-through protection via interlock logic that prevents simultaneous high/low-side conduction.

Key Specifications

Pinout & Package

IRS21856SPBF is housed in a 14-pin SOIC package with exposed thermal pad (SOIC-14EP), optimized for high-power density and thermal dissipation in surface-mount motor drive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR21844SPBF, IRS21856SPBF reduces component count and layout risk via integrated bootstrap diode; versus UCC27211D, it enables direct 400–600 V bus interfacing but trades peak current for high-voltage robustness.

Availability

IRS21856SPBF is available at Aetrix Electronics and suitable for motor inverters, induction heating systems, industrial DC-DC converters, and UPS half-bridge stages requiring stable component supply and long-term production continuity.

Supply support for IRS21856SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial gate drivers.

The IRS218xx family targets high-reliability half-bridge motor control and power conversion, emphasizing robust HV isolation, precise timing, and integrated protection for industrial-grade inverters.

FAQ

What is the recommended bootstrap capacitor value for IRS21856SPBF?

A 0.1 µF ceramic capacitor rated ≥25 V is recommended between V_BS and V_S, placed adjacent to the IC. This value ensures sufficient charge holdover during 100% duty cycle operation at 100 kHz, given typical gate charge requirements and internal diode forward voltage drop of ~0.7 V.

Does IRS21856SPBF support 3.3 V logic inputs?

Yes - IRS21856SPBF accepts 3.3 V CMOS/TTL logic inputs on HIN and LIN pins. Its input threshold is V_IL ≤ 0.8 V and V_IH ≥ 2.0 V, ensuring reliable recognition of 3.3 V signals without level shifting, even under temperature and supply variation.

How does the interlock function prevent shoot-through?

The IRS21856SPBF implements hardware interlock logic that forces LO low whenever HIN is high and HO is actively driving, and vice versa. This asymmetric gating ensures minimum 200 ns enforced dead time regardless of external PWM timing, eliminating shoot-through risk from controller jitter or skew.

Can IRS21856SPBF drive SiC MOSFETs?

Yes - its ±2.5 A peak drive, 120 ns propagation delay, and 600 V V_BS rating support common 650 V SiC MOSFETs (e.g., C3M0065090D). However, gate resistor selection must account for SiC's lower Q_g and faster dV/dt to avoid ringing; typical R_g range is 2.2–5.6 Ω.