Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

International Test Instruments Corporation IRS21962SPBF

Part No.:
IRS21962SPBF
Manufacturer:
International Test Instruments Corporation
Category:
Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRS21962SPBF.pdf
Description:
MOSFET DRIVER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,562

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRS21962SPBF from Infineon Technologies (formerly International Rectifier) is a dual-channel high-side gate driver IC designed to independently drive two N-channel power MOSFETs or IGBTs in high-voltage half-bridge configurations. It features 600 V offset voltage rating, 500 mA peak output current per channel, 90 ns typical propagation delay, and 5 V CMOS/LSTTL-compatible Schmitt-trigger inputs with internal pull-down resistors. It is used in industrial motor drives and resonant DC-DC converters where high dV/dt immunity and matched channel timing are critical.

For engineers reviewing the IRS21962SPBF datasheet, IRS21962SPBF pinout, IRS21962SPBF application, or IRS21962SPBF equivalent, key selection considerations include floating channel voltage tolerance (600 V), propagation delay matching between HO1/HO2 outputs, undervoltage lockout thresholds for VDD (4.0 V/3.9 V), VCC (7.5–9.7 V), and VBS (7.5–9.4 V), and SOIC-16N package thermal resistance (100 °C/W).

Technical Context

The IRS21962SPBF integrates two independent high-side drivers using proprietary HVIC technology, enabling operation with VS nodes up to 600 V above COM ground. Each channel includes matched propagation delay paths, dedicated bootstrap supply monitoring (VBSUV+/-), and latch-immune logic to withstand fast transients (dVS/dt ≤ 50 V/ns).

It accepts standard 5 V logic inputs referenced to VSS, supports simultaneous or independent control of two high-side switches, and incorporates separate undervoltage lockout circuits for VDD, VCC, and VBx supplies-ensuring safe turn-off during supply brownout conditions across all domains.

Key Specifications

ParameterValue and Actual Design Meaning
VOFFSET600 V - Maximum allowable potential difference between VS and COM, enabling direct high-side switching in 400 V DC bus systems.
IO+, IO− (typ)500 mA - Peak pulsed output current per channel, sufficient to charge/discharge 1000 pF gate capacitance within 90 ns.
tON, tOFF (typ)90 ns - Propagation delay from HIN to HO, tightly matched between channels for synchronous half-bridge timing control.
VDD UV Threshold4.0 V (rising), 3.9 V (falling) - Ensures reliable logic input rejection below valid 5 V CMOS levels, preventing spurious switching.
VBS UV Threshold7.5–9.4 V - Bootstrap supply monitoring window prevents HO output activation unless gate drive voltage meets minimum regulation margin.
Package Thermal RθJA100 °C/W - Junction-to-ambient resistance in SOIC-16N package; limits continuous power dissipation to ~1 W at TA = 25°C.

Pinout & Package

IRS21962SPBF is housed in a 16-lead narrow-body SOIC (SOIC-16N) package with exposed pad for thermal enhancement. Pin assignments follow JEDEC MS-012AC standard, with dual high-side outputs (HO1/HO2), floating supply inputs (VB1/VB2, VS1/VS2), logic inputs (HIN1/HIN2), and low-side supply (VCC, COM).

Pin/TerminalCircuit RoleDesign Meaning
VCCLow-side logic supplyProvides 10–20 V bias for internal level-shifting and logic circuitry; referenced to COM.
COMLow-side reference groundCommon return for VCC and logic inputs; must be connected to system low-side DC bus (e.g., −200 V rail).
HIN1, HIN2Digital logic inputsCMOS/LSTTL-compatible Schmitt-trigger inputs with internal pull-down; tolerate VSS offset up to 600 V.
HO1, HO2High-side gate drive outputsFloating outputs capable of sourcing/sinking 500 mA; swing from VSx to VBx (10–20 V range).
VB1, VB2Floating high-side supply railsBootstrap or isolated supplies powering upper gate drivers; each referenced to its respective VSx node.
VS1, VS2Floating high-side return nodesReturn paths for VB1/VB2; track source/emitter potentials of driven MOSFETs/IGBTs up to 600 V above COM.

Key Features

FeatureDesign Value
Dual independent high-side outputsEnables synchronous or asymmetric control of two high-side switches without shared timing constraints or cross-conduction risk.
Propagation delay matchingEnsures <±10 ns skew between HO1 and HO2 edges under identical load and supply conditions-critical for ZVS/ZCS topologies.
50 V/ns dVS/dt immunityPrevents false triggering during fast high-side switching transitions in hard-switched or resonant converters.
Separate VDD/VCC/VBS UVLOIndependent lockout circuits prevent unsafe operation if any supply rail falls outside defined functional window.
Internal input pull-down resistorsGuarantees defined logic-low state on HIN pins during MCU reset or unpowered states-eliminates need for external biasing.

Applications

Industrial Motor DrivesResonant DC-DC Converters

Use Scenario: Three-phase inverter stage driving PMSM or induction motors in HVAC compressors and servo amplifiers.

IC Role / Device Role / Timing Role: Dual high-side driver controlling upper-leg MOSFETs in two legs of a three-phase bridge; matched delays ensure precise PWM phase alignment.

Use Value: Enables clean commutation with minimal shoot-through risk and reduced EMI due to controlled edge rates and tight timing skew.

Use Scenario: LLC resonant converter operating at 100–300 kHz with synchronous rectification and variable frequency control.

IC Role / Device Role / Timing Role: Driving high-side switches in primary-side half-bridge; dV/dt immunity maintains reliability during zero-voltage switching transitions.

Use Value: Sustains stable gate drive under rapid VS node transitions (up to 50 V/ns), preventing false turn-on and improving efficiency at light loads.

Solar MicroinvertersInduction Heating Systems

Use Scenario: Single-phase H-bridge inverter converting DC from PV panels to grid-synchronized AC output.

IC Role / Device Role / Timing Role: Controlling high-side IGBTs in split-phase topology; VOFFSET rating supports 600 V DC link operation.

Use Value: Eliminates need for isolated gate drivers while maintaining safety isolation between control and power domains.

Use Scenario: High-frequency (20–100 kHz) series-resonant inverter supplying power to induction coils in cooktops and industrial heating.

IC Role / Device Role / Timing Role: Driving parallel high-side MOSFETs in full-bridge configuration; dual-channel independence allows phase-shifted control.

Use Value: Reduces gate drive losses via 500 mA peak current capability and 90 ns propagation delay-improving thermal performance at high switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR2110PbFSingle high-side + single low-side output; no propagation delay matching; lower VOFFSET (500 V); SOIC-14 package.Requires external level-shifting for dual high-side use; unsuitable for precision timing-critical half-bridges.Select when cost-sensitive designs require basic high/low-side pairing and timing skew is not critical.
UCC27211D600 V VOFFSET; dual high-side only; 4 A peak output; 15 ns propagation delay; thermally enhanced SOIC-8 package.Higher drive strength and faster switching, but lacks independent VBS UVLO and dV/dt immunity specs beyond 25 V/ns.Select when gate charge requirements exceed 500 mA and layout space is constrained-requires careful noise filtering on VS nodes.

Compared with IR2110PbF and UCC27211D, IRS21962SPBF uniquely balances dual high-side independence, 600 V robustness, matched timing, and comprehensive supply monitoring-making it optimal for industrial inverters requiring long-term reliability under harsh transient conditions.

Availability

IRS21962SPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, resonant DC-DC converters, and induction heating systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for IRS21962SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its high-voltage analog and power IC portfolio.

The IRS21962SPBF belongs to Infineon's HVIC (High-Voltage IC) family, engineered specifically for robust high-side gate driving in industrial and renewable energy power conversion systems where isolation, timing accuracy, and transient immunity are essential.

FAQ

What is the maximum allowable dVS/dt for IRS21962SPBF?

The IRS21962SPBF is rated for up to 50 V/ns dVS/dt on both VS1 and VS2 pins relative to COM. This specification is verified per datasheet test conditions and ensures reliable operation without false triggering during fast high-side switching transitions in hard-switched or resonant topologies.

Can IRS21962SPBF drive IGBTs directly?

Yes-IRS21962SPBF is explicitly qualified to drive N-channel IGBTs in high-side configurations. Its 500 mA peak output current, 10–20 V output swing, and 600 V offset rating meet typical IGBT gate drive requirements for devices rated up to 600 V collector-emitter voltage.

Does IRS21962SPBF require external bootstrap diodes?

Yes-external fast-recovery bootstrap diodes (e.g., 1N4148WS or equivalent) are required between VBx and VSx pins to recharge the bootstrap capacitors during each switching cycle. The IC does not integrate these diodes; their selection impacts minimum duty cycle and high-frequency stability.

Is there an evaluation board available for IRS21962SPBF?

No official Infineon evaluation board is designated solely for IRS21962SPBF. However, it is implemented on multi-driver reference designs such as IRPLVF510 (LLC resonant controller platform), where its dual high-side functionality is validated in 200 kHz operation with 600 V bus voltage.

IRS21962SPBF Specifications

Product attributes
Attribute value
Manufacturer:
International Test Instruments Corporation
Series:
-
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 20V
Logic Voltage - VIL, VIH:
0.6V, 3.5V
Current - Peak Output (Source, Sink):
500mA, 500mA
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
25ns, 25ns
Operating Temperature:
-55°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC

IRS21962SPBF FAQ

1.How can I place an order for IRS21962SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRS21962SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRS21962SPBF reliable?

The price and inventory of IRS21962SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRS21962SPBF is usually 5 days.

3.What payment methods are accepted for IRS21962SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRS21962SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRS21962SPBF?

IRS21962SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRS21962SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRS21962SPBF?

For technical support, including IRS21962SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRS21962SPBF requirements.

6.How does Aetrix verify that IRS21962SPBF is sourced from the original manufacturer or authorized distributors?

All IRS21962SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRS21962SPBF meets industry standards.

7.What is the process for return or replacement of IRS21962SPBF?

All IRS21962SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRS21962SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRS21962SPBF part is unused and in its original packaging.

Return procedure for IRS21962SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRS21962SPBF Tags

  • IRS21962SPBF
  • IRS21962SPBF PDF
  • IRS21962SPBF Datasheet
  • IRS21962SPBF Specifications
  • IRS21962SPBF Images
  • International Test Instruments Corporation
  • International Test Instruments Corporation IRS21962SPBF
  • Buy IRS21962SPBF
  • IRS21962SPBF Price
  • IRS21962SPBF Distributor
  • IRS21962SPBF Supplier
  • IRS21962SPBF Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER