International Test Instruments Corporation IRS2330DSPBF

Overview

IRS2330DSPBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed for driving N-channel MOSFETs and IGBTs in motor control, UPS, and DC-AC inverters. It features 600 V high-side voltage capability, 150 ns propagation delay, and integrated bootstrap diode. Used in three-phase BLDC motor drives with 120° commutation.

For engineers reviewing the IRS2330DSPBF datasheet, IRS2330DSPBF pinout, IRS2330DSPBF application, or IRS2330DSPBF equivalent, key selection criteria include high-side floating supply tolerance, matched propagation delays between high- and low-side channels, undervoltage lockout thresholds, and thermal shutdown behavior under sustained 150°C junction conditions.

Technical Context

The IRS2330DSPBF integrates independent high-side and low-side drivers with level-shifted high-side output capable of operating up to 600 V referenced to ground. It uses a robust level-shifting technique tolerant of fast dV/dt transients (±50 V/ns) and includes non-latching UVLO on both channels (V_CC: 10–20 V; V_BS: 9–20 V).

It supports 15 V logic-compatible input (CMOS/TTL), provides 2.5 A peak source/sink current per channel, and incorporates cross-conduction prevention via built-in dead-time (typ. 500 ns). No external bootstrap capacitor charging circuitry is required due to the integrated fast-recovery bootstrap diode.

Key Specifications

Pinout & Package

28-pin SOIC wide-body (SOIC-28W) package with exposed thermal pad (EP), 1.27 mm pitch, RoHS-compliant, creepage ≥8 mm between high-side and low-side sections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2110SPBF and UCC27211D, the IRS2330DSPBF uniquely combines 600 V high-side operation, integrated bootstrap diode, and programmable dead time-making it the only option among the three qualified for compact, high-efficiency 400 V DC bus inverters without auxiliary supplies or external diodes.

Availability

IRS2330DSPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and electric vehicle auxiliary controllers requiring stable component supply and long-term manufacturability.

Supply support for IRS2330DSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRS2330DSPBF belongs to Infineon's high-voltage gate driver product line, engineered specifically for ruggedized, high-efficiency motor control and power conversion systems operating up to 600 V DC bus.

FAQ

What is the minimum bootstrap capacitor value required for IRS2330DSPBF at 20 kHz switching frequency?

A 0.1 μF X7R ceramic capacitor rated ≥25 V is sufficient for 20 kHz operation with 50% duty cycle and 10 nF total gate charge. The integrated bootstrap diode enables fast recharge during low-side conduction, maintaining V_BS > 9 V across all load conditions. Larger values (≥0.22 μF) are recommended for >60% duty cycle or high-temperature operation above 100°C.

Does IRS2330DSPBF support 3.3 V logic inputs without level shifting?

Yes - IRS2330DSPBF accepts 3.3 V logic inputs directly. Its HIN and LIN inputs have TTL/CMOS thresholds (V_IL = 0.8 V, V_IH = 2.0 V) and operate down to 3 V supply, enabling seamless interface with 3.3 V MCUs like STM32G4 or C2000 F28004x without external translators or pull-ups.

How does the programmable dead-time resistor affect timing accuracy over temperature?

The dead-time resistor (R_DT) sets timing via an internal current source; its variation over −40°C to +125°C is ±5%, resulting in ≤100 ns absolute error in 1 μs setting. For critical timing, use a 1% metal-film resistor with <100 ppm/°C TCR to maintain dead time within ±3% across full temperature range.

Can IRS2330DSPBF drive SiC MOSFETs in hard-switching topologies?

Yes - its ±2.5 A peak output current and 150 ns propagation delay support gate driving of 1200 V SiC MOSFETs (e.g., IMW120R045M1H) in 10–50 kHz hard-switching inverters. However, external negative turn-off voltage (−5 V) and active Miller clamp are recommended for robustness beyond 100 kHz or high-dV/dt conditions.