International Test Instruments Corporation IRS2330JPBF

Overview

IRS2330JPBF from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed for driving N-channel power MOSFETs and IGBTs in motor control, inverter, and SMPS applications. It features 600 V high-side voltage capability, 150 ns propagation delay, and integrated bootstrap diode. The device operates with 10–20 V V_DD, supports 500 mA peak output current, and includes undervoltage lockout (UVLO) on both high- and low-side channels.

For engineers reviewing the IRS2330JPBF datasheet, IRS2330JPBF pinout, IRS2330JPBF application, or IRS2330JPBF equivalent, key selection considerations include bootstrap-based high-side drive compatibility, dual-channel independent input logic, thermal shutdown protection, and PLCC-44 surface-mount package constraints for high-power density layouts.

Technical Context

The IRS2330JPBF integrates independent CMOS/TTL-compatible input logic for high-side (HIN) and low-side (LIN) channels, each controlling its respective output stage via dedicated level-shifted drivers. Its floating high-side channel uses a self-bootstrapped architecture requiring an external bootstrap capacitor and diode (integrated), enabling operation up to 600 V referenced to VS.

Internal UVLO thresholds are 10.1 V (on) and 8.8 V (off) for V_DD, and 9.2 V (on)/7.5 V (off) for V_BS, ensuring robust turn-off during supply sag. Propagation delays are matched within ±30 ns between channels, supporting precise dead-time control in complementary switching topologies.

Key Specifications

Pinout & Package

IRS2330JPBF is housed in a 44-lead plastic leaded chip carrier (PLCC-44) with J-bend leads, designed for surface-mount reflow assembly and thermal relief via exposed pad (EP) soldered to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2110PbF, IRS2330JPBF reduces bill-of-materials and improves timing precision; versus UCC27211D, it delivers true 600 V high-side drive capability essential for industrial AC-DC and motor inverter applications.

Availability

IRS2330JPBF is available at Aetrix Electronics and suitable for motor control inverters, industrial SMPS, solar microinverters, and appliance motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRS2330JPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRS (International Rectifier Smart) product line delivers high-voltage gate drivers engineered for reliability in demanding power conversion systems, particularly where high-side isolation, thermal resilience, and precise timing are critical.

FAQ

What is the minimum bootstrap capacitor value required for IRS2330JPBF in a 20 kHz PWM application?

A 0.22 μF ceramic capacitor rated for ≥25 V is recommended for 20 kHz operation with 50% duty cycle and 1 A gate charge demand. This value ensures V_BS droop remains below 1.2 V per cycle, maintaining UVLO margin above 7.5 V. Larger values improve margin but increase start-up time and physical footprint.

Does IRS2330JPBF support 3.3 V logic inputs?

No. IRS2330JPBF requires CMOS/TTL-compatible inputs with V_IL ≤ 0.8 V and V_IH ≥ 2.0 V, but its input threshold is referenced to V_DD; with V_DD = 12–15 V, 3.3 V logic signals will not reliably register as high. A level-shifter or 5 V buffer is required for MCU interfaces operating below 5 V.

Can IRS2330JPBF drive SiC MOSFETs?

Yes, provided gate resistors limit dV/dt to ≤50 V/ns and gate loop inductance is minimized. The ±500 mA peak output current and 150 ns propagation delay meet typical SiC gate drive requirements for 1.2 kV devices in 65–100 kHz applications, but external negative voltage biasing is needed for enhanced turn-off robustness.

Is the exposed pad (EP) on IRS2330JPBF electrically connected internally?

Yes, the EP is internally tied to V_SS. It must be soldered to a thermally robust PCB copper pour connected to the system power ground to achieve specified R_θJA = 35°C/W and prevent thermal shutdown during continuous 500 mA output operation.