International Test Instruments Corporation IRS2607DSTRPBF

Overview

IRS2607DSTRPBF from Infineon Technologies is a high-voltage, half-bridge gate driver IC with integrated bootstrap diode, 600 V high-side voltage rating, 200 mA source/250 mA sink output current, and typical propagation delay of 190 ns. It drives N-channel MOSFETs or IGBTs in motor control inverters and induction heating systems.

For engineers reviewing the IRS2607DSTRPBF datasheet, IRS2607DSTRPBF pinout, IRS2607DSTRPBF application, or IRS2607DSTRPBF equivalent, key selection criteria include high-side floating capability, integrated bootstrap diode, propagation delay matching between high- and low-side channels, and under-voltage lockout thresholds for both channels.

Technical Context

This dual-channel driver implements independent high-side and low-side outputs with separate logic inputs (INH, INL), enabling asymmetric PWM control. The high-side channel features level-shifted operation up to 600 V with internal level-shifting circuitry and dedicated VB and VS terminals.

It includes non-overlapping logic to prevent shoot-through, UVLO on both high-side (VBS) and low-side (VCC) supplies with hysteresis, and thermal shutdown protection. The device operates from a single 10–20 V VCC supply and supports TTL/CMOS input logic levels.

Key Specifications

Pinout & Package

IRS2607DSTRPBF is housed in an 8-pin SOIC package (SOIC-8, body width 3.9 mm, pitch 1.27 mm) with creepage/clearance optimized for 600 V isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104SPBF, IRS2607DSTRPBF provides independent input control and 600 V capability essential for mains-connected inverters; versus IRS21844STRPBF, it trades external diode flexibility for reduced component count and simplified layout in space-constrained designs.

Availability

IRS2607DSTRPBF is available at Aetrix Electronics and suitable for motor inverter drives, induction heating systems, UPS inverters, and power tool motor controllers requiring stable component supply and long-term industrial availability.

Supply support for IRS2607DSTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and energy markets.

The IRS2607 belongs to Infineon's high-voltage gate driver product line, designed specifically for robust, high-efficiency half-bridge control in motor drives and resonant power conversion systems.

FAQ

What is the maximum allowable bootstrap capacitor value for IRS2607DSTRPBF?

The recommended bootstrap capacitor value is 0.1 µF to 0.22 µF ceramic, rated ≥25 V. Larger values increase charge reservoir but risk exceeding peak current limits during charging; values above 0.47 µF may cause excessive inrush into the internal bootstrap diode and degrade reliability over temperature.

Does IRS2607DSTRPBF require external Schottky diodes on the bootstrap path?

No - IRS2607DSTRPBF integrates a bootstrap diode between VCC and VB pins. An external Schottky diode is not required and would create a parallel conduction path that could compromise startup behavior and thermal performance.

Can IRS2607DSTRPBF drive both MOSFETs and IGBTs in the same design?

Yes - its 200 mA source / 250 mA sink output current and 190 ns propagation delay support gate driving of both low-to-mid power MOSFETs (≤2 nF C_iss) and IGBTs (≤1.5 µC Q_g) used in 1–3 kW motor inverters and induction heating circuits.

How does the non-overlap logic affect minimum dead time in practical layouts?

The internal non-overlap logic enforces ≥500 ns minimum dead time between HO and LO transitions. Layout parasitics (e.g., gate loop inductance >20 nH) may add up to 100 ns of effective delay, so total system dead time typically ranges from 600–750 ns - sufficient for most 12–25 kHz switching applications without external dead-time insertion.