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Infineon Technologies ISC030N12NM6ATMA1
- Part No.:
- ISC030N12NM6ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
ISC030N12NM6ATMA1.pdf
- Description:
- OPTIMOS 6 POWER-TRANSISTOR,120V
- Quantity:
- Payment:
- Shipping:
Inventory:14
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Product details
Overview
ISC030N12NM6ATMA1 from Infineon Technologies is a 120 V, 3.04 mΩ N-channel OptiMOSTM 6 power MOSFET in PG-TSON-8 package, rated for 194 A continuous drain current at TC=25 °C and optimized for high-frequency synchronous rectification in DC-DC converters. It features low Qrr (228 nC @ 1000 A/µs), high avalanche energy (1483 mJ), and 175 °C operation.
For engineers reviewing the ISC030N12NM6ATMA1 datasheet, ISC030N12NM6ATMA1 pinout, ISC030N12NM6ATMA1 application, or ISC030N12NM6ATMA1 equivalent, key selection criteria include RDS(on) stability over temperature, gate charge × RDS(on) figure-of-merit (FOM), reverse recovery performance under high di/dt, and thermal resistance (RthJC = 0.6 °C/W bottom-side).
Technical Context
This MOSFET employs trench-gate superjunction architecture with integrated body diode optimized for low Qrr and fast trr (24–66 ns). Its gate threshold voltage (2.6–3.6 V) enables robust turn-on with standard 8–10 V gate drivers while maintaining noise immunity.
Thermal design leverages bottom-side cooling via exposed drain pad (RthJC = 0.6 °C/W), supporting high-power density layouts. Dynamic parameters-including Ciss = 4200–5500 pF, Crss = 23–40 pF, and Qg = 59–74 nC-are characterized at VDD = 60 V, ID = 25 A, and RG,ext = 1.6 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 120 V - Maximum blocking voltage for 48 V and 60 V bus systems with margin. |
| RDS(on),max | 3.04 mΩ @ VGS=10 V, ID=50 A - Enables <1.5 W conduction loss at 194 A with proper heatsinking. |
| ID,cont | 194 A @ TC=25 °C - Supports high-current output stages in server VRMs and telecom PSUs. |
| Qrr | 228 nC @ diF/dt=1000 A/µs - Reduces switching loss and EMI in hard-switched synchronous rectifiers. |
| EAS | 1483 mJ - Withstands single-pulse inductive energy without failure in motor drive or converter fault conditions. |
| RthJC | 0.6 °C/W (bottom) - Enables direct thermal interface to heatsink for >200 W power dissipation in compact designs. |
| Qg | 59 nC - Matches mid-power gate drivers (e.g., 1–2 A peak) without excessive driver loss or overshoot. |
Pinout & Package
Package: PG-TSON-8-3 - Thermally enhanced 8-pin thin-shrink small-outline no-lead package with exposed drain pad on bottom side for low-inductance, high-current routing and efficient heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3 | Source | Common source connection for all three parallel internal dies; low-inductance return path for high di/dt currents. |
| 4 | Gate | Single gate input terminal; requires <1.6 Ω external series resistance to control ringing and optimize switching speed. |
| 5–8 | Drain | Exposed drain pad connected to pins 5–8; primary thermal and current path to PCB copper area or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized Qrr × RDS(on) FOM | 228 nC × 3.04 mΩ = 693 nC·mΩ - Enables higher efficiency than prior-gen MOSFETs in 100–300 kHz synchronous buck converters. |
| 175 °C max junction temperature | Supports operation in sealed industrial enclosures or high-ambient automotive under-hood environments without derating. |
| Internal body diode with low VSD | VSD = 0.82 V @ IF = 50 A, Tj = 25 °C - Minimizes forward conduction loss during dead-time in half-bridge configurations. |
| Pb-free, halogen-free, MSL 1 | Complies with RoHS and IEC61249-2-21; zero moisture sensitivity allows reflow without baking or special handling. |
Applications
| Server VRM Output Stage | Telecom 48 V DC-DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency point-of-load regulation delivering up to 300 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 300–600 kHz with precise dead-time control. Use Value: 3.04 mΩ RDS(on) and 228 nC Qrr reduce total power loss by ~12% vs. legacy 4.5 mΩ devices at 200 A load. |
Use Scenario: Isolated or non-isolated 48 V-to-12 V conversion in base station power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in LLC or phase-shifted full-bridge topologies. Use Value: 1483 mJ EAS rating ensures reliable operation during output short-circuit transients without device failure. |
| Industrial Motor Drive Inverter | EV On-Board Charger (OBC) PFC Stage |
Use Scenario: 3-phase inverter stage driving 3–7.5 kW AC induction or BLDC motors in factory automation. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid or all-MOSFET inverter leg; operated at 8–20 kHz. Use Value: 175 °C rating and 0.6 °C/W RthJC allow sustained 150 A RMS current with minimal heatsink volume in space-constrained cabinets. |
Use Scenario: Boost PFC switch in 3.3–6.6 kW bidirectional OBCs for electric vehicles. IC Role / Device Role / Timing Role: Fast-switching, high-current boost switch operating at 65–100 kHz with soft-switching assist. Use Value: Low Crss (23–40 pF) and high gfs (55–110 S) improve controllability and reduce voltage spikes during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 2.2 mΩ @ 100 V, Qrr = 310 nC, PG-TSON-8 package | Higher Qrr increases switching loss in high-di/dt synchronous rectification; better suited for lower-frequency PFC. | Select when lowest conduction loss dominates and di/dt < 300 A/µs; verify thermal margin due to higher Qrr-induced losses. |
| IXFH32N120P | 1200 V, 32 A, TO-247 package, RDS(on) = 390 mΩ - not a direct voltage/current match | Designed for 1200 V hard-switched SMPS, not 120 V high-current sync rectification. | Not recommended as functional alternative; consider only if system requires 1200 V rating and accepts severe conduction penalty. |
Compared with STL220N10F7 and IXFH32N120P, ISC030N12NM6ATMA1 uniquely balances ultra-low RDS(on), low Qrr, and 120 V rating in a thermally optimized surface-mount package-making it optimal for high-density, high-efficiency 48–60 V bus applications where both conduction and switching losses must be minimized simultaneously.
Availability
ISC030N12NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for ISC030N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-power-density power conversion in data center, telecom, and industrial equipment where thermal performance and switching fidelity are critical.
FAQ
What is the maximum allowable gate-source voltage for ISC030N12NM6ATMA1?
The absolute maximum VGS is ±20 V per datasheet Table 2. Operation above +12 V or below –5 V risks permanent gate oxide damage. Recommended gate drive is +10 V for full enhancement and –5 V for fast, reliable turn-off with minimal shoot-through risk in bridge configurations.
Can ISC030N12NM6ATMA1 be used in paralleled configurations?
Yes-the device exhibits positive RDS(on) temperature coefficient and matched threshold voltage across lots, enabling stable current sharing. Layout must ensure symmetrical gate drive paths and identical source inductance; use Kelvin source connections and individual 1–2 Ω gate resistors per device.
Is the internal body diode suitable for reverse recovery in hard-switched applications?
Yes-the diode is engineered for low Qrr (228 nC @ 1000 A/µs) and fast trr (24–48 ns), making it viable for synchronous rectification in hard-switched topologies up to 300 kHz. However, zero-voltage switching (ZVS) remains preferred to minimize diode stress in high-reliability systems.
What is the recommended PCB layout for thermal performance?
Use ≥6 cm² of 70 µm thick copper on the bottom layer connected directly to the exposed drain pad (pins 5–8); place thermal vias (≥12×0.3 mm) under the pad into inner ground/power planes. Keep gate traces short and shielded from drain switching noise to prevent false turn-on.
ISC030N12NM6ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 6
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta), 194A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 8V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.04mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 141µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 60 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSON-8-3
ISC030N12NM6ATMA1 FAQ
1.How can I place an order for ISC030N12NM6ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISC030N12NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISC030N12NM6ATMA1 reliable?
The price and inventory of ISC030N12NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC030N12NM6ATMA1 is usually 5 days.
3.What payment methods are accepted for ISC030N12NM6ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC030N12NM6ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISC030N12NM6ATMA1?
ISC030N12NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISC030N12NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISC030N12NM6ATMA1?
For technical support, including ISC030N12NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC030N12NM6ATMA1 requirements.
6.How does Aetrix verify that ISC030N12NM6ATMA1 is sourced from the original manufacturer or authorized distributors?
All ISC030N12NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC030N12NM6ATMA1 meets industry standards.
7.What is the process for return or replacement of ISC030N12NM6ATMA1?
All ISC030N12NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC030N12NM6ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISC030N12NM6ATMA1 part is unused and in its original packaging.
Return procedure for ISC030N12NM6ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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