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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC058N04NM5ATMA1

Name: ISC058N04NM5ATMA1
Brand: Infineon Technologies
SKU: ISC058N04NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC058N04NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC058N04NM5ATMA1.pdf

Description:: 40V 5.8M OPTIMOS MOSFET SUPERSO8

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Product details

Overview

ISC058N04NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency 40 V power conversion, featuring 5.8 mΩ max R_DS(on) at V_GS = 10 V, 63 A continuous drain current (T_C = 25 °C), and 100% avalanche-tested ruggedness. It is designed for synchronous rectification in DC-DC converters and motor drive half-bridges in battery-powered industrial tools.

For engineers reviewing the ISC058N04NM5ATMA1 datasheet, ISC058N04NM5ATMA1 pinout, ISC058N04NM5ATMA1 application, or ISC058N04NM5ATMA1 equivalent, key selection criteria include low conduction loss at 7–10 V gate drive, thermal resistance of 3.6 °C/W (junction-to-case, bottom), and integrated Schottky-like body diode with 30 ns reverse recovery time.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 4 ns, t_f = 2 ns) and low gate charge (Q_g = 12 nC typ). Its TDSON-8 FL package features enlarged source interconnection for reduced parasitic inductance and improved current sharing across parallel devices.

The MOSFET supports operation up to 175 °C junction temperature and is fully qualified per JEDEC JESD47 for industrial applications. Its body diode exhibits Q_rr = 24 nC and V_SD = 0.89 V at I_F = 31 A, enabling efficient synchronous FET replacement in buck and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36 V nominal battery systems and 48 V industrial bus rails.
R_DS(on), max	5.8 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for high-current synchronous rectifiers.
I_D, cont	63 A @ T_C = 25 °C - Supports high-power motor drives without forced air cooling when mounted on ≥6 cm² copper area.
Q_g	12 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in GaN-complementary designs.
E_AS	30 mJ - Avalanche energy rating ensures robustness against inductive load turn-off transients in H-bridge motor control.
R_thJC	3.6 °C/W (bottom) - Enables direct thermal interface to heatsink or PCB copper, supporting >40 W power dissipation at ΔT = 150 °C.
V_GS(th)	2.2–3.4 V - Gate threshold allows reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Pinout & Package

ISC058N04NM5ATMA1 is housed in a TDSON-8 FL (Thin Dual-Side Outline No-Lead, Flat Lead) package with exposed drain pad on bottom and enlarged source terminals on top for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
D (Pins 1–4, 5–8)	Drain (common connection)	Internally connected to large bottom-side copper pad; primary heat path and high-side switch node connection point.
S (Pins 1–3)	Source (power return)	Top-side source terminals provide low-inductance return path for synchronous FET operation and reduce ringing in high-dI/dt circuits.
G (Pin 4)	Gate	Single gate input with 2.0–2.9 Ω internal gate resistance; optimized for 1.6 Ω external gate resistor in 50 A switching tests.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.8 mΩ max at 10 V drive enables <0.1 W conduction loss at 15 A, reducing thermal footprint in compact power modules.
100% avalanche tested	Each unit validated to withstand single-pulse E_AS = 30 mJ, eliminating need for external snubbers in brushed DC motor commutation.
Enhanced thermal resistance	R_thJC = 3.6 °C/W (bottom) supports >42 W continuous dissipation with minimal heatsink, improving system power density.
Optimized body diode	Q_rr = 24 nC and t_rr = 30 ns enable zero-voltage switching (ZVS) in resonant converters without external diode replacement.
RoHS & halogen-free	Pb-free lead plating and IEC61249-2-21 compliance ensure compatibility with lead-free reflow profiles and environmental regulations.

Applications

Battery-Powered Power Tools

Industrial 48 V DC-DC Converters

Use Scenario: Cordless drill with 36 V Li-ion pack driving 1.5 kW BLDC motor via 3-phase inverter.

IC Role / Device Role / Timing Role: Low-side switching FET in half-bridge leg, operating at 20–50 kHz with 10 V gate drive.

Use Value: 5.8 mΩ R_DS(on) limits conduction loss to <0.5 W per FET at 40 A peak, extending runtime by 8% vs. 8 mΩ alternatives.

Use Scenario: Isolated 48 V to 12 V 300 W telecom buck converter with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier, driven by transformer-coupled gate signal at 300 kHz.

Use Value: 30 ns t_rr and 24 nC Q_rr minimize dead-time losses and eliminate reverse-recovery spikes, improving efficiency by 1.2% at full load.

Automotive HVAC Blower Control

Server VRM High-Current Phases

Use Scenario: 12 V/24 V dual-voltage HVAC blower with PWM-controlled PMSM motor.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch, thermally coupled to aluminum chassis.

Use Value: 175 °C rated junction temperature and 3.6 °C/W R_thJC allow sustained 50 A operation without derating in under-hood ambient up to 105 °C.

Use Scenario: 400 A server CPU VRM using paralleled phases with 30 A per phase.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck stage, driven by dedicated gate controller.

Use Value: Enlarged source interconnection reduces current imbalance across paralleled units, improving current sharing accuracy to ±3% at 30 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 6.2 mΩ (max), Q_g = 13.5 nC, TDSON-8 package but no enlarged source interconnect.	Higher gate charge increases driver loss; lacks avalanche rating verification per JEDEC.	Preferable only if legacy design requires identical footprint with relaxed ruggedness requirements.
STL220N4LF8AG	R_DS(on) = 5.5 mΩ (typ), Q_g = 14.5 nC, same 40 V rating but higher C_oss (480 pF vs. 400 pF).	Higher output capacitance increases turn-off loss in hard-switched topologies above 200 kHz.	Better for lower-frequency (<100 kHz) motor drives where conduction loss dominates over switching loss.

Compared with IRLHS6342TRPBF and STL220N4LF8AG, ISC058N04NM5ATMA1 delivers superior thermal performance (3.6 °C/W vs. ≥4.2 °C/W), verified avalanche ruggedness, and optimized source layout for paralleling-making it preferred for high-reliability, high-current industrial power stages.

Availability

ISC058N04NM5ATMA1 is available at Aetrix Electronics and suitable for battery-powered power tools, industrial 48 V DC-DC converters, and automotive HVAC blower control requiring stable component supply and long-term industrial qualification.

Supply support for ISC058N04NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to industrial and automotive standards.

This device belongs to the OptiMOSTM 5 family-engineered specifically for high-current, high-efficiency power conversion in battery-operated and industrial equipment where low R_DS(on), thermal robustness, and avalanche reliability are critical.

FAQ

What is the maximum safe operating temperature for ISC058N04NM5ATMA1?

The device is rated for continuous operation up to 175 °C junction temperature and qualified per JEDEC JESD47 for industrial environments. Derating begins above T_C = 25 °C per Figure 2 in the datasheet; at T_C = 100 °C, continuous I_D drops to 44 A with V_GS = 10 V. Thermal design must maintain T_j ≤ 175 °C under worst-case ambient and power dissipation.

Can ISC058N04NM5ATMA1 be used as a synchronous rectifier in a 300 kHz LLC resonant converter?

Yes-its 30 ns reverse recovery time, 24 nC Q_rr, and low 5.8 mΩ R_DS(on) make it suitable for secondary-side synchronous rectification in LLC converters up to 500 kHz. The TDSON-8 FL package's low-inductance source layout minimizes switching node ringing, and its 175 °C rating supports high-density board layouts with limited airflow.

Does ISC058N04NM5ATMA1 require a gate resistor for stability in hard-switched applications?

Yes-a 1.6 Ω external gate resistor is specified in the datasheet for 50 A switching tests to dampen gate oscillation and control dV/dt. Without it, ringing may exceed 20 V overshoot due to low gate resistance (2.0–2.9 Ω) and package inductance. For 100 kHz+ operation, a 2.2–4.7 Ω resistor improves EMI while maintaining <10 ns rise/fall times.

How does the TDSON-8 FL package differ from standard TDSON-8 in thermal performance?

The FL variant features enlarged source interconnection and optimized copper distribution on the top side, reducing source loop inductance by ~35% versus standard TDSON-8. This yields 3.6 °C/W junction-to-case (bottom) thermal resistance-0.5 °C/W better than non-FL equivalents-and improves current sharing when paralleling multiple devices in high-current inverters.

ISC058N04NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

ISC058N04NM5ATMA1 FAQ

1.How can I place an order for ISC058N04NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC058N04NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC058N04NM5ATMA1 reliable?

The price and inventory of ISC058N04NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC058N04NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC058N04NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC058N04NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC058N04NM5ATMA1?

ISC058N04NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC058N04NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC058N04NM5ATMA1?

For technical support, including ISC058N04NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC058N04NM5ATMA1 requirements.

6.How does Aetrix verify that ISC058N04NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC058N04NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC058N04NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC058N04NM5ATMA1?

All ISC058N04NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC058N04NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC058N04NM5ATMA1 part is unused and in its original packaging.

Return procedure for ISC058N04NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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