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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC0603NLSATMA1

Name: ISC0603NLSATMA1
Brand: Infineon Technologies
SKU: ISC0603NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC0603NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC0603NLSATMA1.pdf

Description:: MOSFET N-CH 80V 12.3A/56A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISC0603NLSATMA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TDSON-8 package, rated for 80 V V_DS, 56 A continuous drain current (T_C = 25 °C), and 8.9 mΩ R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, low Q_g (9.2 nC), and optimized gate charge for high-frequency synchronous rectification in USB PD chargers and DC-DC converters.

For engineers reviewing the ISC0603NLSATMA1 datasheet, ISC0603NLSATMA1 pinout, ISC0603NLSATMA1 application, or ISC0603NLSATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 19 nC Q_oss, 1.4 °C/W R_thJC (bottom), and internal body diode with 31 ns t_rr - critical for ZVS/ZCS topologies and secondary-side switching.

Technical Context

This OptiMOSTM5 device employs a trench-gate superjunction structure enabling low conduction loss and fast switching with minimal gate charge. Its 8.9 mΩ R_DS(on) at 10 V and 3.1 V gate plateau voltage support efficient operation in 5–12 V gate-drive systems, while the 1200 pF C_iss and 180 pF C_oss enable stable control under high dV/dt conditions.

The MOSFET integrates a co-packaged body diode with 0.88 V forward voltage at 20 A and 31 ns reverse recovery time, making it suitable for synchronous buck and LLC resonant converter secondary-side switches where diode conduction and recovery losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus and 60 V transient clamping in industrial and USB PD power stages
R_DS(on), max	8.9 mΩ at V_GS = 10 V - enables ≤1.8 W conduction loss at 15 A DC, reducing heatsink requirements
I_D, cont	56 A at T_C = 25 °C - delivers high current density in compact 5 mm × 6 mm footprint
Q_g(0–4.5 V)	9.2 nC - allows clean 4.5 V logic-level drive with <12 ns turn-on delay and 11 ns rise time
Q_oss	19 nC - minimizes output capacitance energy loss during hard-switching transitions
R_thJC (bottom)	1.4 °C/W - enables direct thermal coupling to PCB copper or heatsink for >50 W power dissipation
t_rr	31 ns - ensures low diode recovery loss and reduced EMI in synchronous rectifier applications

Pinout & Package

PG-TDSON-8 is a thermally enhanced 8-pin exposed-drain DFN package with bottom-side thermal pad. Drain terminals occupy pins 5–8 and the underside thermal pad; gate is on pin 4; source connects to pins 1–3.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Low-impedance return path for load current; tied to PCB ground plane for EMI suppression
4	Gate	Logic-level input requiring <9.2 nC charge; routed away from noisy power traces
5–8 + thermal pad	Drain	Main high-side power node; requires ≥6 cm² copper pour for thermal management per datasheet
-	Body diode anode	Internally connected to source; cathode tied to drain - enables synchronous rectification

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, compatible with microcontroller GPIO and dedicated gate drivers like IRS2117
100% avalanche rated	Withstands 37 mJ single-pulse avalanche energy (E_AS) - eliminates need for external snubbers in inductive switching
Optimized Q_g/R_DS(on) ratio	9.2 nC total gate charge at 8.9 mΩ enables high-efficiency 500 kHz–1 MHz switching in GaN-assisted topologies
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - qualified for automotive and industrial reflow profiles
Superior thermal resistance	1.4 °C/W R_thJC (bottom) allows >52 W power dissipation at T_C = 25 °C without forced air

Applications

USB PD 100 W Charger Secondary Side

48 V Input Telecom DC-DC Converter

Use Scenario: High-density 100 W USB-C charger using synchronous rectification in LLC resonant topology.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode on secondary side; commutated by controller's timing signal.

Use Value: Reduces conduction loss by 40% vs. 40 V Schottky, enabling >95% efficiency at full load and eliminating diode thermal derating.

Use Scenario: Isolated 48 V-to-12 V telecom power module with tight thermal envelope and strict EMI limits.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or half-bridge configuration.

Use Value: 8.9 mΩ R_DS(on) and 1200 pF C_iss minimize switching loss and gate drive power, supporting 300 kHz operation with <1.2 °C/W junction-to-case rise.

Industrial Motor Drive Half-Bridge Leg

Server VR14 Buck Converter High-Side Switch

Use Scenario: 24 V BLDC motor driver with integrated gate driver and current sensing.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; driven by isolated gate driver with 4.5 V logic interface.

Use Value: 56 A I_D rating and 31 ns t_rr prevent shoot-through during PWM dead-time and reduce body diode conduction loss.

Use Scenario: 48 V input, 1.8 V/120 A CPU core supply with multi-phase interleaved buck architecture.

IC Role / Device Role / Timing Role: High-side power switch operating at 1 MHz with adaptive gate drive and phase current balancing.

Use Value: 9.2 nC Q_g and 19 nC Q_oss reduce switching energy to <15 µJ per cycle, enabling >92% efficiency at 120 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N15N5	150 V V_DS, 7.0 mΩ R_DS(on), PG-HSOF-8 package, higher Q_g (22 nC)	Better for 100–120 V bus systems; less suitable for 4.5 V drive due to higher V_GS(th) (2.2 V typ)	Select when higher breakdown voltage and lower R_DS(on) outweigh gate drive simplicity and switching speed.
SISS70DN	80 V V_DS, 7.2 mΩ R_DS(on), 12.5 nC Q_g, 22 nC Q_oss, PowerPAK SO-8L	Higher Q_oss increases hard-switching loss; same logic-level drive but larger footprint	Prefer for cost-sensitive designs where 0.7 mΩ R_DS(on) improvement justifies 37% higher switching charge.

Compared with IPB070N15N5 and SISS70DN, ISC0603NLSATMA1 offers the best balance of low gate charge (9.2 nC), fast diode recovery (31 ns), and thermal performance (1.4 °C/W) for 48–60 V systems requiring sub-100 ns switching transitions and minimal gate drive overhead.

Availability

ISC0603NLSATMA1 is available at Aetrix Electronics and suitable for USB PD chargers, telecom DC-DC modules, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for ISC0603NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM5 product line - engineered specifically for high-efficiency, high-frequency power conversion in consumer, computing, and telecom applications where low R_DS(on), fast switching, and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISC0603NLSATMA1 supports 43 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limitations of the PG-TDSON-8 package and must be validated against actual board layout and airflow conditions.

Does this MOSFET require a gate resistor for stability in 1 MHz switching?

Yes - a 3 Ω external gate resistor is used in the datasheet's switching time test conditions (Table 5). For 1 MHz operation, a 2.2–4.7 Ω resistor is recommended to dampen ringing caused by 1200 pF C_iss and PCB parasitics while maintaining <12 ns turn-on delay.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the integrated body diode has 31 ns reverse recovery time (t_rr) and 26 nC Q_rr at 20 A, enabling reliable synchronous rectification in LLC and buck converters up to 1 MHz without external diode paralleling.

Can ISC0603NLSATMA1 replace older OptiMOSTM3 or TM4 variants in existing designs?

Yes - it is a direct drop-in replacement for ISC0603NLS variants in PG-TDSON-8, offering identical pinout, improved R_DS(on) (−15%), lower Q_g, and tighter V_GS(th) distribution. No layout or gate drive changes are required for most 4.5–10 V drive systems.

ISC0603NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 12.3A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 24µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

ISC0603NLSATMA1 FAQ

1.How can I place an order for ISC0603NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC0603NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC0603NLSATMA1 reliable?

The price and inventory of ISC0603NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC0603NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISC0603NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC0603NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC0603NLSATMA1?

ISC0603NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC0603NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC0603NLSATMA1?

For technical support, including ISC0603NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC0603NLSATMA1 requirements.

6.How does Aetrix verify that ISC0603NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC0603NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC0603NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISC0603NLSATMA1?

All ISC0603NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC0603NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC0603NLSATMA1 part is unused and in its original packaging.

Return procedure for ISC0603NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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