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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC0604NLSATMA1

Name: ISC0604NLSATMA1
Brand: Infineon Technologies
SKU: ISC0604NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC0604NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC0604NLSATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Inventory:2,726

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Product details

Overview

ISC0604NLSATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TDSON-8 package, rated for 80 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V, and 166 A continuous drain current at T_C = 25 °C. It features integrated body diode, 100% avalanche tested ruggedness, and is optimized for synchronous rectification in high-efficiency SMPS.

For engineers reviewing the ISC0604NLSATMA1 datasheet, ISC0604NLSATMA1 pinout, ISC0604NLSATMA1 application, or ISC0604NLSATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V (3.5 mΩ), Q_g (40 nC @ 0–4.5 V), Q_oss (79 nC), thermal resistance R_thJC (0.9 °C/W), and PG-TDSON-8 footprint compatibility with high-current PCB layouts.

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction architecture to achieve low conduction loss and fast switching with controlled gate charge profile. Its 0.9 °C/W junction-to-case thermal resistance enables high-power density operation when mounted on 6 cm² copper area.

The MOSFET supports logic-level drive (V_GS(th) = 1.1–2.3 V) and delivers 101 A continuous diode forward current with 0.86 V typical V_SD at 50 A and 25 °C - critical for low-loss synchronous FET operation in DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for primary-side or secondary-side switch in 48 V input or 60 V bus systems
R_DS(on) max @ V_GS = 10 V	2.8 mΩ - Enables ≤1.4 W conduction loss at 50 A, supporting high-current synchronous rectifiers
R_DS(on) max @ V_GS = 4.5 V	3.5 mΩ - Ensures robust turn-on with standard 3.3 V/5 V controller outputs without level-shifting
Q_g (0–4.5 V)	40 nC - Determines gate driver power requirement and switching speed in hard-switched topologies
Q_oss	79 nC - Directly impacts turn-off energy loss and zero-voltage switching (ZVS) feasibility in resonant converters
R_thJC	0.9 °C/W - Allows >130 W power dissipation with <120 °C junction rise above 25 °C case temperature
I_D continuous @ T_C = 25 °C	166 A - Supports high-current output stages in server VRMs, telecom PSUs, and industrial motor drives

Pinout & Package

PG-TDSON-8 is a thermally enhanced, surface-mount, leadless package with exposed drain pad (pins 5–8) for low-inductance, high-current routing and efficient heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Common return path for load current; tied to ground plane in low-side switch configurations
4	Gate	Control terminal requiring <40 nC charge for full enhancement; sensitive to layout-induced ringing
5–8	Drain	High-current power node connected to exposed copper pad; serves as primary thermal and electrical interface

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 340 mJ capability - eliminates need for external snubbers in inductive switching
Logic-level gate threshold	V_GS(th) = 1.1–2.3 V enables direct drive from microcontrollers or PWM controllers without gate drivers
Superior thermal resistance	R_thJC = 0.9 °C/W allows >130 W dissipation with minimal heatsinking in compact 40 mm × 40 mm PCB layouts
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 standards for industrial and automotive end-equipment compliance

Applications

Server VRM Output Stage

Telecom 48 V DC-DC Converter

Use Scenario: High-current, low-voltage point-of-load regulation in AI accelerator servers requiring >200 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 300–600 kHz with adaptive dead-time control.

Use Value: 2.8 mΩ R_DS(on) and 3.5 mΩ @ 4.5 V minimize conduction loss across load range; 79 nC Q_oss supports ZVS-assisted efficiency above 95%.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in 5G base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology, driven by transformer-coupled gate signals.

Use Value: 101 A diode current rating and 0.86 V V_SD reduce reverse recovery loss; 100% avalanche rating withstands transient overvoltage during startup/fault.

Industrial Motor Drive Inverter

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter stage in servo drives powering 3–7.5 kW AC induction motors.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, handling 100+ A peak currents with 10 µs pulse capability.

Use Value: 664 A pulsed drain current and 0.9 °C/W R_thJC sustain short-duration overload without thermal runaway; 4.5 V drive simplifies gate bias design.

Use Scenario: Boost switch in 3.3 kW bidirectional OBC PFC stage operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability main switch in continuous conduction mode (CCM) boost converter.

Use Value: 340 mJ EAS rating handles line surges and inductive kickback; 5200 pF C_iss balances switching speed and EMI control under 100 V_DS operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB053N08N5	Same V_DS (80 V), higher R_DS(on) (5.3 mΩ @ 10 V), larger PG-HSOF-8 package	Lower current density; suited for lower-power designs where thermal margin exceeds requirement	Select when board space permits larger footprint and 5.3 mΩ conduction loss is acceptable for cost-sensitive designs
IRFH7107TRPBF	Same PG-TDSON-8 package, lower V_DS (60 V), R_DS(on) = 3.0 mΩ @ 10 V, Q_g = 42 nC	Not rated for 80 V systems; limited to 48 V or lower bus architectures	Choose only for 60 V-class applications where 80 V margin is unnecessary and footprint compatibility is mandatory

Compared with IPB053N08N5 and IRFH7107TRPBF, ISC0604NLSATMA1 delivers the lowest R_DS(on) in PG-TDSON-8 at 80 V, enabling highest power density and efficiency in space-constrained 48–60 V SMPS - especially where synchronous rectification demands sub-4 mΩ on-resistance at logic-level gate drive.

Availability

ISC0604NLSATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, high-current capability, and qualified automotive-grade reliability.

Supply support for ISC0604NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial SMPS, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable junction temperature for ISC0604NLSATMA1?

The absolute maximum junction temperature is 150 °C, as specified in Table 2 of the datasheet. Operation beyond this limit risks permanent degradation of the silicon die and bond wires. Derating is required above 25 °C ambient or case temperature - for example, at T_C = 100 °C, continuous drain current drops to 94 A (V_GS = 4.5 V) per Figure 2.

Does ISC0604NLSATMA1 require a gate resistor for stability?

Yes - a gate resistor (typically 2–5 Ω) is recommended to dampen gate-source ringing caused by parasitic inductance in high-di/dt applications. The datasheet's switching time test conditions (e.g., t_d(on), t_r) assume R_G,ext = 3 Ω, confirming its necessity for reproducible timing and EMI control.

Can ISC0604NLSATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (shown in Diagram 9) ensures inherent current sharing when paralleled. However, matched PCB layout (symmetrical gate and source paths) and individual gate resistors are mandatory to prevent oscillation and unequal dynamic current distribution during switching transitions.

Is the internal body diode suitable for reverse recovery in hard-switched topologies?

The body diode has t_rr = 46 ns and Q_rr = 55 nC (at 50 A, 100 A/µs), making it suitable for moderate-frequency hard-switched applications like PFC or non-resonant DC-DC. For >300 kHz operation, ZVS or active clamp techniques are advised to avoid excessive diode loss and voltage overshoot.

ISC0604NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 166A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 103µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 139W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

ISC0604NLSATMA1 FAQ

1.How can I place an order for ISC0604NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC0604NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC0604NLSATMA1 reliable?

The price and inventory of ISC0604NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC0604NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISC0604NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC0604NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC0604NLSATMA1?

ISC0604NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC0604NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC0604NLSATMA1?

For technical support, including ISC0604NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC0604NLSATMA1 requirements.

6.How does Aetrix verify that ISC0604NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC0604NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC0604NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISC0604NLSATMA1?

All ISC0604NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC0604NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC0604NLSATMA1 part is unused and in its original packaging.

Return procedure for ISC0604NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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