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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC0605NLSATMA1

Name: ISC0605NLSATMA1
Brand: Infineon Technologies
SKU: ISC0605NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC0605NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC0605NLSATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Inventory:4,586

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Product details

Overview

ISC0605NLSATMA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TDSON-8 package, rated for 80 V V_DS, 2.3 mΩ R_DS(on) at 10 V_GS, and 195 A continuous drain current at T_C = 25 °C. It features integrated body diode, 100% avalanche tested ruggedness, and optimized gate charge (Q_g = 44 nC) for high-frequency synchronous rectification in server PSUs.

For engineers reviewing the ISC0605NLSATMA1 datasheet, ISC0605NLSATMA1 pinout, ISC0605NLSATMA1 application, or ISC0605NLSATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V_GS (3.0 mΩ), Q_oss (88 nC), thermal resistance R_thJC (0.5 °C/W), and PG-TDSON-8 footprint compatibility with high-current PCB layouts.

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction architecture to achieve low conduction loss and fast switching with controlled EMI. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables direct drive from 3.3 V/5 V logic controllers, while the 0.5 °C/W junction-to-case thermal resistance supports high-power density designs without forced airflow.

The MOSFET integrates a robust internal body diode with t_rr = 44–87 ns and Q_rr = 47–93 nC, enabling efficient reverse recovery in synchronous buck converters. Its 370 mJ single-pulse avalanche energy rating ensures reliability under transient overvoltage conditions in industrial SMPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for primary-side switching in 48 V input DC-DC converters
R_DS(on) max @ 10 V_GS	2.3 mΩ - Enables <1.2 W conduction loss at 70 A output current in 12 V output rails
R_DS(on) max @ 4.5 V_GS	3.0 mΩ - Ensures full enhancement with standard logic-level drivers in compact adapters
Q_g (0–4.5 V)	44 nC - Supports >1 MHz switching with moderate gate driver power (<1 W at 1 MHz)
Q_oss	88 nC - Reduces turn-on loss during hard-switched transitions in LLC resonant converters
R_thJC	0.5 °C/W - Allows 156 W power dissipation with ≤78 °C temperature rise above case
I_D continuous @ T_C=25°C	195 A - Sustains high-current synchronous rectification in multi-phase VRMs

Pinout & Package

PG-TDSON-8 is a thermally enhanced 5 mm × 6 mm surface-mount package with exposed drain pad on bottom side for low-inductance, high-current PCB routing and optimal heat transfer to inner copper layers.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Low-side return path; electrically tied to internal source metallization and thermal slug
4	Gate	Control terminal; requires <2.3 V threshold to initiate conduction; sensitive to ESD
5–8	Drain	Main power path; connected to exposed copper pad for thermal and electrical sinking

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V_GS, eliminating need for gate boosters in 5 V control systems
100% avalanche rated	Withstands 370 mJ single-pulse energy without degradation-critical for unregulated input surges
Superior thermal resistance	R_thJC = 0.5 °C/W enables >150 W operation with passive cooling on 6 cm² copper area
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 reflow standards for lead-free assembly

Applications

Server PSU Synchronous Rectifier

Industrial DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converters for AI accelerators.

IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diodes to reduce conduction loss by >40%.

Use Value: Achieves >96% efficiency at 100 A load due to 3.0 mΩ R_DS(on) at 4.5 V_GS and 88 nC Q_oss.

Use Scenario: High-current step-down conversion in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Main power switch in 100 kHz hard-switched buck stage delivering 24 V/60 A.

Use Value: Delivers stable output with <1.5 °C/W system thermal impedance using 4-layer PCB with 6 cm² drain copper.

Telecom Base Station PSU

EV Onboard Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side switching in 3 kW telecom rectifiers operating at 100 kHz with 400 V bus.

IC Role / Device Role / Timing Role: High-efficiency switching element in interleaved PFC front-end stages.

Use Value: Maintains <1.2 W switching loss per phase thanks to 55 nC total gate charge and 0.5 °C/W R_thJC.

Use Scenario: Isolated auxiliary supply (12 V/10 A) powering gate drivers and MCU in 11 kW OBCs.

IC Role / Device Role / Timing Role: Synchronous rectifier in forward converter secondary winding.

Use Value: Eliminates 1.8 W diode conduction loss at full load, reducing thermal stress on transformer core.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB060N10N5	100 V rating, 6.0 mΩ R_DS(on) @ 4.5 V_GS, same PG-TDSON-8 package	Better overvoltage margin but higher conduction loss; suited for 60 V bus systems	Select when system requires >85 V blocking capability and can tolerate +100% R_DS(on)
IRL1404ZPBF	40 V rating, 4.0 mΩ R_DS(on) @ 4.5 V_GS, TO-220 package	Larger footprint, higher R_thJA; limited to <50 A continuous current	Choose only for legacy through-hole designs where PG-TDSON-8 rework is not feasible

Compared with IPB060N10N5 and IRL1404ZPBF, ISC0605NLSATMA1 delivers the lowest R_DS(on) per unit area in its voltage class, enabling highest power density in space-constrained 48 V server and telecom supplies while maintaining logic-level drive compatibility.

Availability

ISC0605NLSATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifiers requiring stable component supply, high-reliability qualification, and long-term lifecycle support.

Supply support for ISC0605NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency switched-mode power supplies where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum allowable junction temperature for ISC0605NLSATMA1?

The absolute maximum junction temperature is 150 °C, as specified in the datasheet's "Maximum ratings" table. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating curves in Diagram 2 show that continuous drain current must be reduced to 108 A at T_C = 100 °C to maintain safe thermal margins.

Does ISC0605NLSATMA1 require a gate resistor for stability?

Yes-a series gate resistor (typically 2–5 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 34–60 pF) and PCB inductance. The datasheet's switching time test condition specifies R_G,ext = 3 Ω, and omitting it may cause overshoot exceeding V_GS = ±20 V absolute maximum rating.

Can ISC0605NLSATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Diagram 9) ensures inherent current sharing across paralleled devices. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to prevent oscillation and unequal dynamic current distribution during switching transitions.

Is the internal body diode suitable for reverse recovery in synchronous rectification?

Yes-the diode is fully characterized with t_rr = 44–87 ns and Q_rr = 47–93 nC at 100 A/µs diF/dt, making it suitable for synchronous rectification in buck and forward converters up to 500 kHz. Its soft recovery behavior minimizes voltage spikes and EMI compared to discrete Schottky alternatives.

ISC0605NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 115µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

ISC0605NLSATMA1 FAQ

1.How can I place an order for ISC0605NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC0605NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC0605NLSATMA1 reliable?

The price and inventory of ISC0605NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC0605NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISC0605NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC0605NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC0605NLSATMA1?

ISC0605NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC0605NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC0605NLSATMA1?

For technical support, including ISC0605NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC0605NLSATMA1 requirements.

6.How does Aetrix verify that ISC0605NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC0605NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC0605NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISC0605NLSATMA1?

All ISC0605NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC0605NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC0605NLSATMA1 part is unused and in its original packaging.

Return procedure for ISC0605NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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