Infineon Technologies ISC0804NLSATMA1

Overview

ISC0804NLSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET in PG-TDSON-8 package, rated for 100 V drain-source voltage, 10.9 mΩ max R_DS(on) at V_GS = 10 V, and 59 A continuous drain current at T_C = 25 °C. It integrates an internal body diode and is optimized for high-frequency switching in USB PD and fast-charger topologies.

For engineers reviewing the ISC0804NLSATMA1 datasheet, ISC0804NLSATMA1 pinout, ISC0804NLSATMA1 application, or ISC0804NLSATMA1 equivalent, key selection criteria include its 9.2 nC gate charge (0–4.5 V), 24 nC output charge, 1.2 °C/W junction-to-case thermal resistance (bottom side), 100% avalanche-tested ruggedness, and RoHS/halogen-free compliance.

Technical Context

This OptiMOSTM5 device employs a trench-gate superjunction structure enabling low conduction loss and fast switching with minimal Q_gd/Q_gs ratio (3.3/3.8 nC). Its gate threshold voltage (1.1–2.3 V) ensures reliable turn-on with 4.5 V logic drivers, and its 30 ns reverse recovery time supports synchronous rectification in high-efficiency DC-DC converters.

The MOSFET's thermal design centers on bottom-side cooling: R_thJC = 1.2 °C/W (typ.) to PCB copper, while top-side R_thJC is intentionally higher (20 °C/W) to direct heat flow downward. Its SOA curve supports 236 A pulsed drain current at 100 µs pulse width under DC-biased conditions.

Key Specifications

Pinout & Package

ISC0804NLSATMA1 uses the PG-TDSON-8 (also known as TDSON-8 or LFPAK56) surface-mount package with exposed drain pad on the bottom for thermal conduction. Pin 1–3 are source terminals, Pin 4 is gate, and Pins 5–8 form a common drain connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPB070N10N5 and IRL1404ZPBF, ISC0804NLSATMA1 delivers optimal balance of low R_DS(on), moderate Q_G, and compact surface-mount packaging-making it ideal for space-constrained, high-frequency USB PD and server VRM designs where both efficiency and board area matter.

Availability

ISC0804NLSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery adapters, server VRMs, industrial DC-DC converters, and EV on-board charger auxiliary supplies requiring stable component supply and long-term manufacturability.

Supply support for ISC0804NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM5 family-engineered specifically for high-efficiency, high-frequency power conversion in consumer chargers, computing VRMs, and industrial SMPS where low gate charge and tight R_DS(on) tolerance are critical.

FAQ

What is the maximum recommended gate resistor for 1 MHz switching?

A 1.6 Ω external gate resistor achieves 6.1 ns turn-on delay and 6.8 ns rise time per datasheet test conditions (V_DD = 50 V, I_D = 20 A). For 1 MHz operation, this value minimizes gate oscillation while maintaining <10 ns total switching transitions-critical to limit overlap loss. Lower values (<1 Ω) risk ringing; higher values (>3 Ω) increase switching loss disproportionately.

Can ISC0804NLSATMA1 be used in synchronous rectification mode?

Yes-the integrated body diode has 23 nC Q_rr and 30 ns t_rr, verified per Table 7, enabling safe synchronous rectification in secondary-side flyback or LLC resonant converters. Its 0.86 V V_SD at 20 A and low R_DS(on) allow efficient replacement of 45 V Schottky diodes without external diode paralleling.

Is thermal pad soldering required for rated power dissipation?

Yes-rated 60 W power dissipation assumes full-solder contact between the exposed drain pad (Pins 5–8) and ≥6 cm² of 70 µm thick copper on FR4 PCB, mounted vertically in still air. Without this thermal path, R_thJA degrades from 50 °C/W to >100 °C/W, limiting usable power to <15 W at 25 °C ambient.

Does ISC0804NLSATMA1 support paralleling for higher current?

Yes-its positive temperature coefficient of R_DS(on) (see Diagram 9) ensures inherent current sharing across paralleled units. Test data shows <5% current imbalance at 100 A total load with matched gate drive and symmetric PCB layout. Use identical gate resistors and Kelvin source connections to maintain balance.