Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC0806NLSATMA1

Name: ISC0806NLSATMA1
Brand: Infineon Technologies
SKU: ISC0806NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: ISC0806NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC0806NLSATMA1.pdf

Description:: MOSFET N-CH 100V 16A/97A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,640

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

ISC0806NLSATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TDSON-8 package, rated for 100 V V_DS, 5.4 mΩ R_DS(on) at V_GS = 10 V, and 97 A continuous drain current at T_C = 25 °C. It integrates an internal body diode, is 100% avalanche tested, and optimized for high-frequency switching in USB PD and fast-charger topologies.

For engineers reviewing the ISC0806NLSATMA1 datasheet, ISC0806NLSATMA1 pinout, ISC0806NLSATMA1 application, or ISC0806NLSATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, Q_g = 20 nC (0–4.5 V), Q_oss = 50 nC, thermal resistance R_thJC = 0.7 °C/W, and PG-TDSON-8 footprint compatibility with high-current PCB layouts.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 108 mΩ·nC at 4.5 V drive. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) ensures robust logic-level turn-on with standard 3.3 V/5 V controllers, while its 93 mJ single-pulse avalanche energy rating supports unclamped inductive switching in synchronous rectification stages.

The MOSFET's dynamic parameters-C_iss = 2600–3400 pF, C_oss = 420–560 pF, Cr_ss = 19–25 pF-and fast switching times (t_d(on) = 3.7 ns, t_f = 7.0 ns) enable operation above 500 kHz in resonant LLC and active-clamp forward converters without excessive gate drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC in industrial and USB PD 3.1 EPR applications with margin.
R_DS(on) max	5.4 mΩ @ V_GS = 10 V, I_D = 50 A - Enables <1.4 W conduction loss at 50 A, critical for compact charger thermal design.
Q_G (0–4.5 V)	20 nC - Low gate charge allows efficient driving with low-power gate drivers like IRS2007 or UCC27524A.
Q_OSS	50 nC @ V_DS = 50 V - Directly impacts hard-switching loss and zero-voltage switching (ZVS) boundary in resonant converters.
R_thJC	0.7 °C/W - Enables >90 W power dissipation with minimal junction-to-case temperature rise under forced-air cooling.
I_D continuous	97 A @ T_C = 25 °C - Sustains full output current in 100 W+ GaN-assisted adapters without derating on 6 cm² copper area.
V_GS(th)	1.6 V typical - Ensures reliable enhancement-mode turn-on with 3.3 V microcontrollers and avoids shoot-through in half-bridge configurations.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), thermally enhanced for bottom-side heat transfer via soldered drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Common source node for all three parallel internal dies; connects directly to PCB ground plane for low-inductance return path.
4	Gate	Single gate input terminal; requires <1.6 Ω external series resistor to damp ringing during 50 A switching transitions.
5–8	Drain	Internally paralleled drain terminals tied to exposed metal pad; must be fully soldered to ≥6 cm² copper for rated 97 A current handling.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for gate boosters in 5 V controller systems.
100% avalanche rated	Guarantees 93 mJ single-pulse energy survival without parameter shift-critical for flyback snubberless designs.
Optimized FoM (R_DS(on) × Q_g)	108 mΩ·nC at 4.5 V enables >95% efficiency in 65–100 W USB-C chargers operating at 300–600 kHz.
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU-qualified for automotive infotainment power stages.

Applications

USB PD 3.1 Fast Charger

Synchronous Rectifier in LLC Resonant Converter

Use Scenario: Primary-side switch in 140 W dual-port GaN + Si MOSFET hybrid adapter with programmable voltage/current profiles.

IC Role / Device Role: High-side switching FET in active-clamp forward topology, driven by UCC28780 controller.

Use Value: 5.4 mΩ R_DS(on) and 20 nC Q_g reduce total switching + conduction loss to <1.8 W at 100 A peak, enabling 30 W/in³ power density.

Use Scenario: Secondary-side synchronous rectifier in 100 W server PSU LLC converter with 380 V bus and 12 V output.

IC Role / Device Role: Low-side SR FET replacing Schottky diode, controlled by TEA1995T driver.

Use Value: 0.89 V V_SD and 49 ns t_rr minimize reverse recovery loss, improving full-load efficiency by 0.9% vs. 100 V Schottky.

Industrial 24 V DC-DC Converter

Battery Protection Circuit (eFuse)

Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary supply for PLC I/O modules with 5 A load.

IC Role / Device Role: Primary switch in active-clamp forward regulator operating at 400 kHz with 100 V clearance.

Use Value: 100 V rating and 150 °C T_jmax ensure reliability across -40 to +85 °C ambient with no derating up to 74 A at T_C = 100 °C.

Use Scenario: Load switch in smart battery pack with overcurrent, short-circuit, and thermal shutdown protection.

IC Role / Device Role: High-side eFuse FET controlled by MAX17524 monitor IC.

Use Value: 1.6 V V_GS(th) and 5.4 mΩ R_DS(on) allow precise 50 mV current-sense threshold and <120 mW power loss at 5 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N10N5	R_DS(on) = 6.7 mΩ @ 10 V; Q_g = 22 nC (0–4.5 V); PG-HSOF-8 package with different pinout (G-S-D-S-D-S-D-S).	Higher R_DS(on) increases conduction loss by ~25% at 50 A; HSOF-8 requires PCB redesign due to non-compatible drain-source layout.	Select only if existing board uses HSOF-8 footprint and 0.3 mΩ higher R_DS(on) is acceptable for thermal budget.
STL220N10F7	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 27 nC (0–4.5 V); same PG-TDSON-8 package and pinout (pin 1–3 = S, pin 4 = G, pin 5–8 = D).	7 nC higher gate charge increases gate drive loss by ~35% at 500 kHz; identical thermal and layout compatibility.	Prefer when lowest possible R_DS(on) is prioritized over switching speed; verify gate driver can source 27 nC without overshoot.

Compared with IPB070N10N5 and STL220N10F7, ISC0806NLSATMA1 delivers the best balance of low gate charge (20 nC), tight R_DS(on) tolerance (5.4 mΩ max), and exact PG-TDSON-8 pinout compliance-making it optimal for new 100 W+ charger designs where layout reuse and efficiency are co-constrained.

Availability

ISC0806NLSATMA1 is available at Aetrix Electronics and suitable for USB PD fast chargers, industrial DC-DC converters, and battery protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ISC0806NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification per JEDEC standards.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency power conversion in consumer and industrial SMPS, emphasizing low R_DS(on) × Q_g FoM and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The ISC0806NLSATMA1 supports 74 A continuous drain current at case temperature of 100 °C, as specified in Table 2 of the Rev. 2.2 datasheet. This value reflects thermal derating based on R_thJC = 0.7 °C/W and maximum junction temperature of 150 °C, and is validated under defined PCB cooling conditions (40 mm × 40 mm FR4 with 6 cm² copper).

Does this MOSFET include an integrated body diode, and what are its key diode parameters?

Yes, ISC0806NLSATMA1 integrates a monolithic body diode. Key parameters include 81 A continuous forward current (I_S), 388 A pulsed current (I_S,pulse), 0.89 V typical forward voltage (V_SD) at 50 A and 25 °C, 49 ns reverse recovery time (t_rr), and 67 nC reverse recovery charge (Q_rr), all measured per Table 7 in the datasheet.

Is the PG-TDSON-8 package lead-free and halogen-free?

Yes, the PG-TDSON-8 package uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. It is also halogen-free per IEC61249-2-21, confirmed in the "Features" section of the datasheet and supported by Infineon's material declarations.

Can ISC0806NLSATMA1 be used in avalanche mode, and what is its rated energy?

Yes, ISC0806NLSATMA1 is 100% avalanche tested and rated for 93 mJ single-pulse avalanche energy (E_AS) with I_D = 43 A and R_GS = 25 Ω, as specified in Table 2. This rating applies under unclamped inductive switching conditions and is validated per JEDEC JESD24-11 test methodology.

ISC0806NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 61µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-7

ISC0806NLSATMA1 FAQ

1.How can I place an order for ISC0806NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC0806NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC0806NLSATMA1 reliable?

The price and inventory of ISC0806NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC0806NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISC0806NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC0806NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC0806NLSATMA1?

ISC0806NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC0806NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC0806NLSATMA1?

For technical support, including ISC0806NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC0806NLSATMA1 requirements.

6.How does Aetrix verify that ISC0806NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC0806NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC0806NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISC0806NLSATMA1?

All ISC0806NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC0806NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC0806NLSATMA1 part is unused and in its original packaging.

Return procedure for ISC0806NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.