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Infineon Technologies ISCH42N04LM7ATMA1
- Part No.:
- ISCH42N04LM7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
ISCH42N04LM7ATMA1.pdf
- Description:
- ISCH42N04LM7ATMA1
- Quantity:
- Payment:
- Shipping:
Inventory:5,881
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Product details
Overview
ISCH42N04LM7ATMA1 from Infineon is an N-channel 40 V OptiMOS™ 7 power MOSFET in PG-TDSON-8 package, delivering 541 A continuous drain current at TC = 25 °C, 0.42 mΩ typical RDS(on) at VGS = 10 V, and 167 nC output charge - optimized for high-efficiency synchronous rectification in server VRMs and 48 V DC-DC converters.
For engineers reviewing the ISCH42N04LM7ATMA1 datasheet, ISCH42N04LM7ATMA1 pinout, ISCH42N04LM7ATMA1 application, or ISCH42N04LM7ATMA1 equivalent, key selection criteria include its ultra-low RDS(on), 100% avalanche-tested ruggedness, bottom-side thermal resistance of 0.64 °C/W, and RoHS/halogen-free compliance for industrial-grade power stages.
Technical Context
This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to minimize conduction and switching losses simultaneously. Its gate plateau voltage of 2.5 V enables robust drive margin with 4.5 V logic-level gate control, while the 79 nC gate charge at 4.5 V supports high-frequency operation up to 1 MHz in multiphase buck converters.
The integrated body diode exhibits 0.76 V typical forward voltage at 50 A and 25 °C, with reverse recovery time as low as 36 ns under dI/dt = 1000 A/μs - critical for minimizing shoot-through loss and EMI in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum blocking voltage for 48 V bus applications with 20 % safety margin |
| RDS(on), max | 0.42 mΩ at VGS = 10 V - enables <1.5 W conduction loss at 50 A, reducing heatsink requirements |
| ID, cont | 541 A at TC = 25 °C - supports high-current single-phase or parallel-phase power delivery |
| Qoss | 167 nC - determines turn-off energy loss and impacts snubber design in high-voltage transitions |
| RthJC, bot | 0.64 °C/W - allows direct thermal coupling to PCB copper, enabling compact thermal layout without external heatsink |
| EAS | 899 mJ - ensures reliable operation under inductive load switching and fault conditions |
| Qg | 79 nC at VGS = 10 V - defines gate driver current demand and switching speed trade-off |
Pinout & Package
PG-TDSON-8 package with exposed drain pad on bottom side for optimal thermal performance and dual-side cooling capability. Pin 1–3: Source; Pin 4: Gate; Pin 5–8: Drain (internally connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3 | Source | Low-side reference node; tied to PCB ground plane for minimal loop inductance in high-dI/dt paths |
| 4 | Gate | Control input requiring <79 nC charge; sensitive to layout-induced ringing due to low threshold (1.5 V typ) |
| 5–8 | Drain | High-current power input/output node; electrically and thermally connected to large copper area via bottom thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.42 mΩ max at 10 V - reduces I²R loss by >30 % vs. prior-gen OptiMOS™ 6 in same package |
| 100 % avalanche tested | 899 mJ single-pulse rating - eliminates need for external clamping in inductive switching circuits |
| Bottom-side thermal interface | 0.64 °C/W RthJC - enables >200 W dissipation with 40 mm × 40 mm 70 μm copper, no heatsink required |
| Pb-free & halogen-free | RoHS-compliant plating per IEC61249-2-21 - meets industrial and telecom environmental compliance mandates |
Applications
| Server VRM Phase Legs | 48 V Input DC-DC Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage in cloud data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 500 kHz–1 MHz with precise dead-time control. Use Value: 0.42 mΩ RDS(on) cuts conduction loss by 45 % vs. 0.75 mΩ alternatives, improving full-load efficiency from 92.1 % to 93.8 %. | Use Scenario: Primary-side switch in isolated 48 V-to-12 V intermediate bus converter for telecom power shelves. IC Role / Device Role / Timing Role: High-side switch in active-clamp forward or LLC resonant topology, operating at 300–600 kHz. Use Value: 167 nC Qoss enables ZVS transition at 48 V input, reducing switching loss by 32 % compared to 220 nC competitor devices. |
| Industrial Motor Drives | EV Onboard Chargers (OBC) |
Use Scenario: Half-bridge output stage in 3 kW servo drive controlling PMSM motors in factory automation. IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive 100 A pulsed currents and 1000 V/μs dV/dt stress. Use Value: 100 % avalanche qualification ensures survival during motor phase reversal faults without external protection. | Use Scenario: Secondary-side synchronous rectifier in 6.6 kW bidirectional OBC AC/DC stage. IC Role / Device Role / Timing Role: Fast-recovery body diode used during light-load ZVS transitions; 36 ns trr minimizes reverse recovery loss. Use Value: 0.76 V VSD at 50 A lowers forward conduction loss by 18 % versus 0.92 V SiC diodes in same thermal footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB42N04S4-02 | RDS(on) = 0.48 mΩ (max), Qg = 85 nC, same PG-TDSON-8 package | Higher gate charge increases driver loss; slightly higher RDS(on) raises conduction loss at >400 A | Preferred where cost sensitivity outweighs 3–5 % efficiency penalty in lower-power (<2 kW) systems |
| IRFH7185TRPBF | RDS(on) = 0.45 mΩ (max), Qoss = 210 nC, different PQFN 5×6 mm package | Higher output capacitance degrades ZVS performance above 300 kHz; non-pin-compatible layout change required | Consider only when existing board uses IRFH7185 footprint and thermal budget permits 20 % higher switching loss |
Compared with IPB42N04S4-02 and IRFH7185TRPBF, ISCH42N04LM7ATMA1 delivers the lowest combined conduction–switching loss in high-frequency, high-current applications - especially where bottom-side cooling and avalanche ruggedness are mandatory.
Availability
ISCH42N04LM7ATMA1 is available at Aetrix Electronics and suitable for server VRMs, 48 V DC-DC converters, industrial motor drives, and EV onboard chargers requiring stable component supply across extended production lifecycles.
Supply support for ISCH42N04LM7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™ 7 family, engineered specifically for high-efficiency, high-current power conversion in datacenter, telecom, and industrial applications - emphasizing ultra-low RDS(on), fast switching, and robust thermal performance in surface-mount packages.
FAQ
What is the maximum junction temperature rating for ISCH42N04LM7ATMA1?
The device is rated for continuous operation up to Tj = 175 °C, with storage temperature ranging from –55 °C to +175 °C. Thermal derating begins at TC > 25 °C per Figure 2 in the datasheet, and safe operating area curves (Figure 3) define current limits at elevated case temperatures.
Does ISCH42N04LM7ATMA1 require a gate resistor for stability?
Yes - a 1–5 Ω gate resistor is recommended to dampen parasitic oscillation caused by gate-drain Miller capacitance (Crss = 140–240 pF) and PCB trace inductance. Layout must minimize gate loop area; gate driver peak current should exceed 10 A to fully charge 79 nC within 10 ns.
Can ISCH42N04LM7ATMA1 be paralleled for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) (see Figure 9) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB copper distribution, and thermal coupling to maintain ΔTj < 5 °C between devices to avoid current imbalance exceeding 10 %.
Is the body diode suitable for freewheeling in synchronous rectification?
Yes - the integrated body diode has 0.76 V typical VSD at 50 A and 25 °C, with trr as low as 36 ns under high dI/dt. It supports zero-voltage switching in hard-switched topologies but is not intended for continuous unidirectional conduction like a Schottky diode.
ISCH42N04LM7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 7
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 61A (Ta), 541A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.42mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:
- 207 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 234W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8
ISCH42N04LM7ATMA1 FAQ
1.How can I place an order for ISCH42N04LM7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISCH42N04LM7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISCH42N04LM7ATMA1 reliable?
The price and inventory of ISCH42N04LM7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISCH42N04LM7ATMA1 is usually 5 days.
3.What payment methods are accepted for ISCH42N04LM7ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISCH42N04LM7ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISCH42N04LM7ATMA1?
ISCH42N04LM7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISCH42N04LM7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISCH42N04LM7ATMA1?
For technical support, including ISCH42N04LM7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISCH42N04LM7ATMA1 requirements.
6.How does Aetrix verify that ISCH42N04LM7ATMA1 is sourced from the original manufacturer or authorized distributors?
All ISCH42N04LM7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISCH42N04LM7ATMA1 meets industry standards.
7.What is the process for return or replacement of ISCH42N04LM7ATMA1?
All ISCH42N04LM7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISCH42N04LM7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISCH42N04LM7ATMA1 part is unused and in its original packaging.
Return procedure for ISCH42N04LM7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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