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Infineon Technologies ISK018NE1LM7AULA1

Part No.:
ISK018NE1LM7AULA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
6-PowerVDFN
Datasheet:
AetrixISK018NE1LM7AULA1.pdf
Description:
ISK018NE1LM7AULA1 MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,819

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Product details

Overview

ISK018NE1LM7AULA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-VSON-6 package, rated for 15 V VDS, 1.8 mΩ max RDS(on) at 7 V VGS, and 129 A continuous drain current at TC = 25 °C. It features 100% avalanche testing, optimized thermal resistance (RthJC = 1.6 °C/W typ), and is qualified for industrial applications in high-efficiency SMPS.

For engineers reviewing the ISK018NE1LM7AULA1 datasheet, ISK018NE1LM7AULA1 pinout, ISK018NE1LM7AULA1 application, or ISK018NE1LM7AULA1 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, Qoss = 6.7 nC for fast switching, and PG-VSON-6 thermal performance in space-constrained synchronous rectification designs.

Technical Context

This OptiMOSTM 7 device uses trench-gate superjunction technology to achieve ultra-low on-resistance with logic-level gate compatibility (VGS(th) = 1.2–2.0 V). Its 6-pin PG-VSON-6 package integrates a thermally enhanced exposed drain tab for direct PCB copper cooling.

The MOSFET supports high-current pulsed operation (ID,pulse = 516 A) and exhibits tightly controlled dynamic parameters: Ciss = 1200–1600 pF, Coss = 620–810 pF, and Qg = 7.5–9.0 nC (0–4.5 V), enabling efficient operation in 500 kHz+ synchronous buck converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS15 V - Maximum blocking voltage for low-voltage synchronous rectification in 12 V input rails.
RDS(on), max1.8 mΩ at VGS = 7 V, ID = 20 A - Enables <1.5 W conduction loss at 129 A continuous current with proper heatsinking.
ID, cont129 A at TC = 25 °C - Supports high-current output stages in server VRMs and telecom DC/DC modules.
Qoss6.7 nC - Low output charge minimizes turn-off energy loss and improves light-load efficiency in hard-switched topologies.
RthJC1.6 °C/W typ - Enables >30 W power dissipation with ≤50 °C junction-to-case temperature rise under forced-air cooling.
EAS53 mJ - Confirmed single-pulse avalanche ruggedness supports reliable operation during transient overvoltage events.
VGS(th)1.6 V typ - Ensures full enhancement with standard 3.3 V or 5 V logic-level gate drivers without level-shifting.

Pinout & Package

PG-VSON-6 is a leadless, surface-mount package with an exposed drain pad (tab) for thermal and electrical connection. Pin 1, 2, 5, 6, and the tab are internally connected to the drain; Pin 3 is the gate; Pin 4 is the source.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 5, 6, tabDrainHigh-current power path with low-inductance, multi-point connection to PCB copper pour for thermal and electrical performance.
3GateControl terminal requiring <9 nC total gate charge; compatible with standard logic-level drivers (3.3 V/5 V).
4SourceReference node for gate drive; must be routed with minimal inductance to avoid ringing during fast switching.

Key Features

FeatureDesign Value
N-channel logic-level operationVGS(th) = 1.2–2.0 V enables direct drive from microcontrollers or PWM controllers without gate driver ICs.
Ultra-low RDS(on)1.8 mΩ max at 7 V reduces conduction losses by >40% vs. prior-gen 2.5 mΩ devices in 12 V input SMPS.
100% avalanche testedEach unit validated to 53 mJ single-pulse EAS, ensuring robustness in unregulated or fault-prone power systems.
Optimized for synchronous rectificationLow Qgd/Qg ratio and fast tr/tf (<2 ns) minimize reverse recovery losses when replacing Schottky diodes.
Pb-free & halogen-freeRoHS-compliant plating and IEC61249-2-21 compliance support environmental requirements for industrial and telecom equipment.

Applications

Server VRM Output StageTelecom DC/DC Converter

Use Scenario: High-current, high-efficiency 12 V → 0.8 V conversion delivering up to 300 A per phase in AI accelerator power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter, operating at 500–800 kHz with 40 ns dead-time control.

Use Value: 1.8 mΩ RDS(on) and 6.7 nC Qoss reduce total power loss by 2.1 W per phase versus 2.5 mΩ alternatives at 120 A load.

Use Scenario: 48 V → 12 V intermediate bus converter in 5G base station power shelves with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology, switching at 300 kHz with ZVS-assisted turn-on.

Use Value: 1.6 °C/W RthJC allows 39 W dissipation with <60 °C case rise on 6 cm² copper, eliminating need for external heatsinks.

Industrial PLC Power ModuleAutomotive ADAS Camera Power Supply

Use Scenario: 24 V input, 5 V/10 A isolated DC/DC for programmable logic controller I/O modules operating in -40 to +85 °C ambient.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback converter, driven by self-driven gate signal referenced to source.

Use Value: 100% avalanche rating ensures survival during 40 V line transients per IEC 61000-4-5, avoiding secondary-side overvoltage failure.

Use Scenario: Compact 12 V → 3.3 V point-of-load supply for image sensor and ISP in automotive surround-view camera modules.

IC Role / Device Role / Timing Role: Low-side switch in buck regulator with integrated controller, operating at 2.1 MHz to minimize filter size.

Use Value: Logic-level VGS(th) and 7.5 nC Qg enable clean 2.1 MHz switching with <5 ns propagation delay using internal gate driver.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLHS6342TRPBFRDS(on) = 2.3 mΩ @ 4.5 V, Qg = 8.5 nC, PG-TSON-6 package, no avalanche rating specifiedLower peak current capability (100 A vs. 129 A); suitable only for ≤100 A designs with marginPrefer where cost sensitivity outweighs avalanche robustness and thermal headroom needs.
SISD18DN-T1-GE3RDS(on) = 1.9 mΩ @ 4.5 V, Qoss = 9.2 nC, SO-8 package, RthJA = 62 °C/W (no RthJC spec)Larger footprint and higher thermal resistance limits power density; not recommended for >60 A continuous useSelect only if SO-8 board layout is fixed and thermal derating to 60 A is acceptable.

Compared with IRLHS6342TRPBF and SISD18DN-T1-GE3, ISK018NE1LM7AULA1 delivers superior thermal performance (1.6 °C/W RthJC), higher avalanche ruggedness (53 mJ), and lower Qoss, making it optimal for high-density, high-reliability industrial and telecom power stages.

Availability

ISK018NE1LM7AULA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power modules requiring stable component supply across extended product lifecycles.

Supply support for ISK018NE1LM7AULA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 7 family-designed specifically for high-efficiency, high-current synchronous rectification and primary-side switching in compact, thermally constrained SMPS applications.

FAQ

What is the maximum allowable gate-source voltage for ISK018NE1LM7AULA1?

The absolute maximum continuous gate-source voltage is ±7 V, with transient tolerance up to ±8 V for pulses shorter than 20 ns. Exceeding ±7 V continuously risks gate oxide degradation; design must ensure gate driver clamping or limiting to stay within this range during all operating conditions including startup and fault events.

Can ISK018NE1LM7AULA1 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (confirmed in Diagram 9) ensures inherent current sharing stability. Layout must balance gate loop inductance and drain-source routing; use individual gate resistors (≥1 Ω) and Kelvin source connections to prevent oscillation and ensure uniform switching behavior across paralleled units.

Is the PG-VSON-6 package compatible with standard reflow profiles?

Yes-the package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260 °C, 20–40 s above 217 °C). The exposed drain pad requires ≥80% solder coverage and stencil aperture design matching Infineon's recommended land pattern (Document No. PG-VSON-6-1) for optimal thermal transfer.

Does ISK018NE1LM7AULA1 include an integrated body diode for freewheeling?

Yes-it features a monolithic parasitic body diode with VSD = 0.79–1.0 V at 20 A and trr = 14–32 ns depending on di/dt. While usable for freewheeling, its Qrr (8–30 nC) and softness are inferior to dedicated SiC Schottky diodes; best practice is to operate in synchronous rectification mode to bypass body diode conduction entirely.

ISK018NE1LM7AULA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 7
Package/Case:
6-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
15 V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 7V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 20A, 7V
Vgs(th) (Max) @ Id:
2V @ 106µA
Gate Charge (Qg) (Max) @ Vgs:
13.6 nC @ 7 V
Vgs (Max):
±7V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 7.5 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta), 39W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-VSON-6-1

ISK018NE1LM7AULA1 FAQ

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Please submit a Request for Quotation (RFQ) for ISK018NE1LM7AULA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of ISK018NE1LM7AULA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISK018NE1LM7AULA1 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISK018NE1LM7AULA1?

For technical support, including ISK018NE1LM7AULA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISK018NE1LM7AULA1 requirements.

6.How does Aetrix verify that ISK018NE1LM7AULA1 is sourced from the original manufacturer or authorized distributors?

All ISK018NE1LM7AULA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISK018NE1LM7AULA1 meets industry standards.

7.What is the process for return or replacement of ISK018NE1LM7AULA1?

All ISK018NE1LM7AULA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISK018NE1LM7AULA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISK018NE1LM7AULA1 part is unused and in its original packaging.

Return procedure for ISK018NE1LM7AULA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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