My Inquiry
My Account
Renesas ISL2111ABZ
- Part No.:
- ISL2111ABZ
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ISL2111ABZ.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:6,966
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISL2111ABZ from Renesas Electronics is a 100V, high-frequency half-bridge N-channel MOSFET driver IC in an 8-lead SOIC package, delivering 3A peak pull-up and 4A peak pull-down output current, with 8V–14V VDD supply range and TTL/3.3V-compatible inputs. It drives high-side and low-side power MOSFETs in telecom DC/DC converters and active-clamp forward topologies.
For engineers reviewing the ISL2111ABZ datasheet, ISL2111ABZ pinout, ISL2111ABZ application, or ISL2111ABZ equivalent, key selection criteria include bootstrap diode integration (1W rating), 9ns/7.5ns rise/fall times into 1nF load, -40°C to +125°C operating temperature, and SOIC package compliance with IPC-2221 100V conductor spacing guidelines.
Technical Context
The ISL2111ABZ implements independent CMOS/TTL-level inputs (HI/LI) with no internal cross-coupling, enabling flexible PWM or complementary control schemes. Its level-shifted high-side driver uses a robust bootstrap architecture with on-chip 1W diode and supports up to 114V HB voltage relative to HS.
Undervoltage lockout (UVLO) operates at 6.6V (rising) on VDD with 0.6V hysteresis and 6.1V (rising) on HB with matching hysteresis, ensuring reliable startup and fault recovery. Propagation delays are tightly matched: tMON ≤ 8ns and tMOFF ≤ 6ns (typical), minimizing shoot-through risk in high-frequency switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 8V to 14V - enables operation from standard 12V rails while supporting derated use down to 8V for brownout resilience |
| Peak Output Current | 3A pull-up / 4A pull-down - eliminates need for external totem-pole buffers in most 100V half-bridge designs |
| Rise/Fall Time | 9ns / 7.5ns into 1nF - supports multi-MHz switching frequencies with minimal gate drive loss |
| Input Thresholds | VIH = 1.8V, VIL = 1.4V (TTL/3.3V compatible) - ensures direct interfacing with microcontrollers and PWM controllers |
| Bootstrap Diode | On-chip 1W diode with VF = 0.7V @ 100mA - reduces BOM count and improves thermal reliability vs discrete bootstrap solutions |
| Operating Temp | -40°C to +125°C - qualified for industrial and telecom power supply environments |
| HS Voltage Rating | 100V continuous, 105V transient (<100ns) - supports primary-side switching in isolated DC/DC converters |
Pinout & Package
ISL2111ABZ is housed in an 8-lead narrow-body SOIC package (M8.15), RoHS-compliant, with 100V conductor spacing per IPC-2221. The exposed pad is absent in this SOIC variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. VDD | Positive supply for low-side driver and logic | Bypass to VSS with ≥1µF ceramic capacitor; powers internal UVLO and input buffers |
| 2. HB | High-side bootstrap supply node | Connects to positive terminal of external bootstrap capacitor; integrates 1W diode from VDD |
| 3. HO | High-side gate driver output | Drives gate of high-side N-MOSFET; referenced to HS, not VSS |
| 4. HS | High-side source connection | Connects to source of high-side MOSFET and negative terminal of bootstrap capacitor |
| 5. LO | Low-side gate driver output | Drives gate of low-side N-MOSFET; referenced to VSS (ground) |
| 6. LI | Low-side input | TTL/3.3V-compatible digital input controlling LO; no hysteresis |
| 7. HI | High-side input | TTL/3.3V-compatible digital input controlling HO; no hysteresis |
| 8. VSS | Chip ground reference | Return path for VDD, LO, and logic; must be low-inductance connection to system ground |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | 1W rating with 0.7V forward drop @ 100mA - eliminates external diode, saves board space, improves thermal margin |
| Independent HI/LI inputs | No internal logic coupling - allows asymmetric PWM, dead-time insertion, or external protection circuitry |
| Robust noise immunity | Outputs unaffected by HS ringing below ground or high dv/dt slewing - prevents false turn-on in hard-switching applications |
| Supply glitch tolerance | Outputs remain stable during VDD transients - avoids unintended MOSFET switching during line dips or surges |
| Wide VDD operating range | 8V minimum - supports operation under brownout conditions where many drivers fail to start or latch |
Applications
| Telecom Half-Bridge DC/DC Converters | Two-Switch Forward Converters |
|---|---|
Use Scenario: Primary-side power stage in 48V-input telecom rectifiers delivering 12V/3.3V outputs at >300kHz switching frequency. IC Role / Device Role / Timing Role: Half-bridge gate driver providing independent, fast, high-current drive to two N-channel MOSFETs in phase-leg configuration. Use Value: 3A/4A peak current and 9ns/7.5ns switching times reduce conduction and switching losses, improving efficiency above 94% at full load. | Use Scenario: High-efficiency 48V-to-12V isolated DC/DC module for base station power distribution with synchronous rectification. IC Role / Device Role / Timing Role: Low-side and high-side gate driver coordinating main switch and auxiliary switch timing in non-isolated forward topology. Use Value: Independent HI/LI inputs enable precise dead-time control, preventing shoot-through while maintaining ZVS capability across load range. |
| Active-Clamp Forward Converters | Class-D Audio Amplifiers |
Use Scenario: High-density 54V-input server PSU using active-clamp forward architecture for improved light-load efficiency and reduced EMI. IC Role / Device Role / Timing Role: Gate driver for main power switch and active-clamp switch, managing high dv/dt transitions at HS node. Use Value: 100V HS rating and immunity to HS slewing ensure reliable clamp switch timing even during 30V/ns transients. | Use Scenario: 200W bridge-tied load (BTL) audio amplifier with >500kHz carrier frequency for digital input class-D modulation. IC Role / Device Role / Timing Role: Half-bridge driver delivering high-speed, high-current gate signals to output H-bridge MOSFETs. Use Value: Matched propagation delays (tMON ≤ 8ns, tMOFF ≤ 6ns) minimize crossover distortion and improve THD+N performance below 0.05%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL2111AR4Z | Same electrical specs, but in 12-lead 4×4mm DFN package with exposed pad for enhanced thermal performance (θJA = 39°C/W vs SOIC's 95°C/W) | Preferred for high-power density or thermally constrained PCB layouts where SOIC footprint is insufficient | Select ISL2111AR4Z when junction temperature must stay <125°C under >2.5W dissipation; requires re-layout for DFN land pattern |
| IRS21844PbF | 4A/4A peak current, 10–20V VDD range, no integrated bootstrap diode, different pinout (HO/LO swapped), higher quiescent current (0.5mA vs 0.3mA) | Requires external bootstrap diode and careful layout to match ISL2111ABZ's noise immunity and propagation matching | Choose IRS21844PbF only if legacy design reuse or cost sensitivity outweighs benefits of integrated diode and tighter delay matching |
Compared with ISL2111AR4Z, the ISL2111ABZ offers identical functionality in a through-hole-compatible SOIC package ideal for prototyping and lower-power applications, while IRS21844PbF demands additional components and layout effort to achieve comparable robustness-making ISL2111ABZ the preferred choice for new designs prioritizing integration and noise immunity.
Availability
ISL2111ABZ is available at Aetrix Electronics and suitable for telecom power supplies, server PSUs, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for ISL2111ABZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The ISL2111ABZ belongs to Renesas' high-voltage gate driver product line, engineered specifically for efficient, reliable switching in isolated DC/DC topologies operating up to 100V with demanding noise and thermal requirements.
FAQ
What is the maximum bootstrap capacitor voltage rating supported by the ISL2111ABZ?
The ISL2111ABZ supports a maximum bootstrap supply voltage (HB) of 114VDC relative to HS. This is specified in the Absolute Maximum Ratings table and validated across temperature. The device maintains safe operation up to this voltage when the external bootstrap capacitor is rated accordingly. Designers must ensure the capacitor's voltage rating exceeds 114V with sufficient margin for transients. The ISL2111ABZ itself does not regulate HB voltage-it relies on proper external capacitor selection and layout to avoid overstress.
Does the ISL2111ABZ require external bootstrap diodes?
No, the ISL2111ABZ integrates a 1W on-chip bootstrap diode between VDD and HB pins. This eliminates the need for an external diode in standard half-bridge configurations. The diode has a typical forward voltage of 0.7V at 100mA and dynamic resistance of 0.7Ω. Using the internal diode simplifies layout, reduces component count, and improves thermal reliability compared to discrete solutions. External diodes are unnecessary unless special high-reliability redundancy or ultra-low VF requirements exist.
What is the purpose of the HS pin on the ISL2111ABZ?
The HS (High-Side Source) pin on the ISL2111ABZ serves as the return path for the high-side driver and the negative terminal connection point for the external bootstrap capacitor. It must be connected directly to the source of the high-side N-channel MOSFET. This pin establishes the local ground reference for the high-side output (HO), enabling level-shifting functionality. Proper low-inductance routing of HS is critical to prevent shoot-through and ensure clean switching-especially under high dv/dt conditions where ringing can falsely trigger the high-side driver.
Can the ISL2111ABZ drive both high-side and low-side MOSFETs simultaneously in a synchronous buck converter?
No, the ISL2111ABZ is designed exclusively for half-bridge topologies-not synchronous buck converters. Its HO output is level-shifted relative to HS, not VSS, making it unsuitable for low-side drive in buck configurations. In a synchronous buck, the high-side switch requires bootstrapped drive while the low-side switch needs ground-referenced drive-functions handled separately. The ISL2111ABZ provides both outputs but assumes the low-side MOSFET source connects to VSS and the high-side source connects to HS. For buck applications, dedicated high-side/low-side drivers or integrated buck controllers are appropriate.
What is the minimum pulse width the ISL2111ABZ can reliably respond to on its HI and LI inputs?
The ISL2111ABZ guarantees reliable output response to input pulses as short as 50ns, as specified in the Electrical Specifications table under "Minimum Input Pulse Width that Changes the Output" (tPW). This enables use in high-frequency PWM schemes up to ~10MHz duty-cycle resolution. The value is tested across temperature (-40°C to +125°C) and represents the shortest pulse that will fully transition LO or HO. Shorter pulses may result in incomplete switching or metastability, especially near temperature extremes. For robust operation, design margins should keep pulse widths ≥100ns.
ISL2111ABZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 14V
- Logic Voltage - VIL, VIH:
- 1.4V, 2.2V
- Current - Peak Output (Source, Sink):
- 3A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 9ns, 7.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
ISL2111ABZ FAQ
1.How can I place an order for ISL2111ABZ through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL2111ABZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL2111ABZ reliable?
The price and inventory of ISL2111ABZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL2111ABZ is usually 5 days.
3.What payment methods are accepted for ISL2111ABZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL2111ABZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL2111ABZ?
ISL2111ABZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL2111ABZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL2111ABZ?
For technical support, including ISL2111ABZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL2111ABZ requirements.
6.How does Aetrix verify that ISL2111ABZ is sourced from the original manufacturer or authorized distributors?
All ISL2111ABZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL2111ABZ meets industry standards.
7.What is the process for return or replacement of ISL2111ABZ?
All ISL2111ABZ units undergo pre-shipment inspection (PSI). If there is an issue with ISL2111ABZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL2111ABZ part is unused and in its original packaging.
Return procedure for ISL2111ABZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISL2111ABZ Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
