Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas ISL2111AR4Z

Part No.:
ISL2111AR4Z
Manufacturer:
Renesas
Category:
Gate Drivers
Package:
12-VFDFN Exposed Pad
Datasheet:
AetrixISL2111AR4Z.pdf
Description:
IC GATE DRVR HALF-BRIDGE 12DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,362

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ISL2111AR4Z from Renesas Electronics is a 100V, high-frequency half-bridge N-channel MOSFET driver IC in a 12-lead 4×4mm DFN package. It delivers 3A peak pull-up and 4A peak pull-down output current, supports 8V–14V VDD supply, features 3.3V/TTL-compatible inputs, and integrates a 1W on-chip bootstrap diode for telecom DC/DC converters.

For engineers reviewing the ISL2111AR4Z datasheet, ISL2111AR4Z pinout, ISL2111AR4Z application, or ISL2111AR4Z equivalent, key selection criteria include bootstrap diode integration, 100V HS voltage rating, <50ns propagation delays, 9ns/7.5ns rise/fall times into 1nF, and SOIC/DFN/TDFN package compatibility for high-density power stage layouts.

Technical Context

The ISL2111AR4Z implements independent high-side and low-side drivers with level-shifted high-side control, enabling operation with HS voltages up to 100V continuous. Its bootstrap architecture uses an integrated 1W diode and supports HB supply up to 114VDC, eliminating external diodes in most half-bridge topologies.

Input logic thresholds are TTL/3.3V compatible (VIH = 1.8V typ, VIL = 1.4V typ), with no input hysteresis-unlike the ISL2110 variant. Propagation delays are tightly matched (tMON ≤ 8ns, tMOFF ≤ 6ns typ), and outputs remain stable during high dv/dt HS slewing or supply glitches.

Key Specifications

Parameter Value and Actual Design Meaning
VDD Range 8V–14V: Enables direct use with standard 12V intermediate bus rails without LDO pre-regulation.
HS Voltage Rating −1V to 100V continuous: Supports primary-side switching in telecom forward and active-clamp converters.
Peak Output Current 3A pull-up / 4A pull-down: Drives large gate charges (e.g., 100nC) at multi-MHz frequencies with minimal external buffering.
Rise/Fall Time 9ns/7.5ns into 1nF: Enables >10MHz switching in Class-D audio and high-frequency DC/DC stages.
Propagation Delay 32–50ns (typ): Ensures precise timing control in synchronous rectified topologies with tight dead-time requirements.
Bootstrap Diode On-chip 1W diode with 0.5V VF @ 100µA: Reduces BOM count and PCB area vs discrete bootstrap solutions.
Input Thresholds VIH = 1.8V, VIL = 1.4V (TTL/3.3V): Direct interface with microcontrollers, PWM controllers, and FPGA I/O without level shifters.

Pinout & Package

ISL2111AR4Z uses a 12-lead 4×4mm DFN package (PKG DWG L12.4x4A) with exposed pad (EPAD) for thermal enhancement. The EPAD is electrically isolated and must be connected to PCB ground for optimal thermal performance (θJC = 2.5°C/W).

Pin/Terminal Circuit Role Design Meaning
VDD Low-side supply input Bypass to VSS with ≥1µF ceramic capacitor; powers LO driver and logic core.
HB High-side bootstrap supply Connects to positive terminal of external bootstrap capacitor; internal diode charges capacitor from VDD.
HO High-side gate drive output Drives gate of high-side N-MOSFET; referenced to HS, not VSS.
HS High-side source connection Connects to source of high-side MOSFET; serves as return path for bootstrap capacitor and reference for HO.
HI High-side input signal TTL/3.3V-compatible logic input controlling HO; no hysteresis.
LI Low-side input signal TTL/3.3V-compatible logic input controlling LO; independent of HI for flexible PWM or complementary control.
VSS Ground reference System ground for LO driver and logic; must be low-inductance connection to minimize noise coupling.
LO Low-side gate drive output Drives gate of low-side N-MOSFET; referenced to VSS.
NC No-connect Pins 3, 4, 6, 7, 11, 12 are unconnected; must be left floating or tied to VSS per layout guidelines.
EPAD Exposed thermal pad Electrically isolated; solder to solid ground plane for θJA = 39°C/W and 3.1W max power dissipation.

Key Features

Feature Design Value
Integrated bootstrap diode 1W on-chip diode eliminates external component, reduces layout complexity, and improves reliability in high-vibration environments.
100V HS voltage capability Supports direct use in 48V-input telecom DC/DC converters without external level-shifting or isolation components.
Independent HI/LI inputs Enables asymmetric PWM, burst-mode control, or external dead-time insertion without requiring controller-level modifications.
Robust noise immunity Outputs unaffected by HS ringing below ground or supply glitches-critical for stable operation in high-dv/dt power stages.
Wide temperature range Specified from −40°C to +125°C junction temperature, supporting industrial and telecom base station deployments.

Applications

Telecom Half-Bridge DC/DC Converters Two-Switch Forward Converters

Use Scenario: 48V-to-12V isolated conversion in telecom power shelves with >500kHz switching frequency.

IC Role / Device Role / Timing Role: Half-bridge driver controlling primary-side N-MOSFETs; provides matched turn-on/turn-off timing and bootstrap gate biasing.

Use Value: Integrated 1W bootstrap diode and 3A/4A drive strength eliminate external buffers, reducing gate drive loop inductance and EMI.

Use Scenario: High-efficiency 48V input forward converter for server VRMs with synchronous rectification.

IC Role / Device Role / Timing Role: Low-side driver for main switch and high-side driver for reset switch; leverages independent HI/LI for precise phase control.

Use Value: 9ns/7.5ns rise/fall times into 1nF enable >1MHz operation while maintaining <50ns propagation delay matching for ZVS optimization.

Active-Clamp Forward Converters Class-D Audio Amplifiers

Use Scenario: 36–75V input active-clamp forward topology in industrial PoE injectors with tight size constraints.

IC Role / Device Role / Timing Role: High-side driver for clamp switch and low-side driver for main switch; withstands 105V transient HS voltage.

Use Value: 100V HS rating and −1V to 100V continuous HS operating range allow safe clamping during overvoltage events without derating.

Use Scenario: 100W+ full-bridge Class-D amplifier with >300kHz PWM carrier frequency and fast transient response.

IC Role / Device Role / Timing Role: Dual half-bridge driver per channel; uses matched propagation delays (tMON/tMOFF ≤ 8ns/6ns) to minimize dead-time distortion.

Use Value: TTL/3.3V input compatibility enables direct interface with DSP or FPGA PWM generators, avoiding level-shifter latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISL2111ABZ Same die, 8-lead SOIC package (M8.15); higher θJA (95°C/W), lower max power (1.3W), no EPAD. Preferred for prototyping, lower-frequency designs (<300kHz), or where thermal budget allows larger footprint. Select ISL2111ABZ when board space permits SOIC and thermal load is <1W; ISL2111AR4Z preferred for high-density, high-frequency, or thermally constrained layouts.
UCC27211D TI part; 4A/4A drive, 120V HS rating, but no integrated bootstrap diode and 5V-only inputs (no 3.3V support). Requires external bootstrap diode and level-shifting for 3.3V controllers; suited for 48V–60V industrial supplies. Choose UCC27211D only if 120V HS rating is mandatory and external diode integration is acceptable; ISL2111AR4Z offers tighter integration and broader input compatibility.

Compared with ISL2111ABZ, ISL2111AR4Z delivers 2.4× higher thermal power handling (3.1W vs 1.3W) and 2.5× lower θJA in a 40% smaller footprint. Against UCC27211D, it provides native 3.3V input support and eliminates a critical BOM component-reducing design risk and layout sensitivity.

Availability

ISL2111AR4Z is available at Aetrix Electronics and suitable for telecom DC/DC converters, active-clamp forward supplies, and Class-D audio amplifiers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for ISL2111AR4Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering high-performance analog, power, and embedded processing solutions for industrial, automotive, and communications infrastructure markets.

The ISL2111AR4Z belongs to Renesas' high-voltage gate driver product line, engineered specifically for high-efficiency, high-frequency isolated DC/DC conversion in telecom and server power systems.

FAQ

What is the maximum bootstrap capacitor voltage rating supported by the ISL2111AR4Z?

The ISL2111AR4Z supports a maximum bootstrap supply voltage (HB) of 114VDC, as specified in Absolute Maximum Ratings. This allows reliable operation with 100V HS rail plus margin for transients. The on-chip bootstrap diode is rated for 100mA average current, and the HB pin must be decoupled with a low-ESR ceramic capacitor (typically 0.1µF–1µF) placed close to the HB and HS pins. Exceeding 114VDC risks permanent damage to the internal diode structure.

Does the ISL2111AR4Z require external level-shifting for 3.3V microcontroller interfaces?

No, the ISL2111AR4Z does not require external level-shifting for 3.3V microcontroller interfaces. Its inputs are explicitly designed for 3.3V/TTL compatibility, with VIH = 1.8V (min) and VIL = 1.4V (max) at 25°C. This ensures robust logic recognition across temperature and process variation without additional components-unlike the ISL2110, which uses CMOS thresholds and requires ≥4.4V for VIH.

How does the exposed pad (EPAD) on the ISL2111AR4Z affect thermal performance?

The EPAD on the ISL2111AR4Z is electrically isolated and must be soldered to a PCB ground plane to achieve its rated thermal performance: θJC = 2.5°C/W and θJA = 39°C/W. Without proper EPAD grounding, junction temperature can rise >30°C under 2W load, risking thermal shutdown or accelerated aging. Renesas specifies a minimum 3.75mm × 3.75mm copper area with ≥4 thermal vias (0.3mm diameter) to inner ground layers.

Can the ISL2111AR4Z drive both high-side and low-side MOSFETs in a synchronous buck converter?

No, the ISL2111AR4Z is designed exclusively for half-bridge topologies-not synchronous buck. Its high-side driver references HO to HS (not VSS), and HS must swing with the switching node. In a synchronous buck, the "high-side" switch source connects to the output (not a floating node), making ISL2111AR4Z incompatible. For synchronous buck, use dedicated low-side + high-side drivers like the ISL6612A or HIP2104.

What is the minimum input pulse width the ISL2111AR4Z can reliably respond to?

The ISL2111AR4Z guarantees reliable output response to input pulses as narrow as 50ns (maximum), as specified in Electrical Specifications under "Minimum Input Pulse Width that Changes the Output." This enables use in ultra-high-frequency PWM schemes (e.g., >10MHz carrier) and digital dead-time control circuits where sub-100ns timing resolution is required.

ISL2111AR4Z Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
12-VFDFN Exposed Pad
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
8V ~ 14V
Logic Voltage - VIL, VIH:
1.4V, 2.2V
Current - Peak Output (Source, Sink):
3A, 4A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
114 V
Rise / Fall Time (Typ):
9ns, 7.5ns
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
12-DFN (4x4)

ISL2111AR4Z FAQ

1.How can I place an order for ISL2111AR4Z through Aetrix?

Please submit a Request for Quotation (RFQ) for ISL2111AR4Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISL2111AR4Z reliable?

The price and inventory of ISL2111AR4Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL2111AR4Z is usually 5 days.

3.What payment methods are accepted for ISL2111AR4Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL2111AR4Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISL2111AR4Z?

ISL2111AR4Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISL2111AR4Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISL2111AR4Z?

For technical support, including ISL2111AR4Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL2111AR4Z requirements.

6.How does Aetrix verify that ISL2111AR4Z is sourced from the original manufacturer or authorized distributors?

All ISL2111AR4Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL2111AR4Z meets industry standards.

7.What is the process for return or replacement of ISL2111AR4Z?

All ISL2111AR4Z units undergo pre-shipment inspection (PSI). If there is an issue with ISL2111AR4Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISL2111AR4Z part is unused and in its original packaging.

Return procedure for ISL2111AR4Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ISL2111AR4Z Tags

  • ISL2111AR4Z
  • ISL2111AR4Z PDF
  • ISL2111AR4Z Datasheet
  • ISL2111AR4Z Specifications
  • ISL2111AR4Z Images
  • Renesas
  • Renesas ISL2111AR4Z
  • Buy ISL2111AR4Z
  • ISL2111AR4Z Price
  • ISL2111AR4Z Distributor
  • ISL2111AR4Z Supplier
  • ISL2111AR4Z Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER