Renesas ISL2111ARTZ-T
- Part No.:
- ISL2111ARTZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
ISL2111ARTZ-T.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10TDFN
- Quantity:
- Payment:

- Shipping:

Inventory:12,042
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Product details
Overview
ISL2111ARTZ-T from Renesas Electronics is a 100V, high-frequency half-bridge N-channel MOSFET driver IC in a 10-lead 4×4 mm TDFN package. It delivers 3A peak pull-up and 4A peak pull-down gate drive current, supports 8V–14V VDD operation, features integrated 1W bootstrap diode, and provides TTL/3.3V-compatible inputs for telecom DC/DC converters.
For engineers reviewing the ISL2111ARTZ-T datasheet, ISL2111ARTZ-T pinout, ISL2111ARTZ-T application, or ISL2111ARTZ-T equivalent, key selection criteria include bootstrap diode integration, 100V HS voltage rating, propagation delay matching (≤16 ns), 7.5 ns fall time into 1 nF load, and thermal resistance of 40°C/W (θJA) in its TDFN package.
Technical Context
The ISL2111ARTZ-T implements independent high-side and low-side drivers with level-shifted high-side control, on-chip bootstrap diode, and undervoltage lockout on both VDD and HB rails. Its input stage accepts 3.3V/TTL logic thresholds (VIH = 1.8–2.2 V, VIL = 1.2–1.8 V) and includes no internal hysteresis beyond standard CMOS noise margin.
It operates with HS node voltages up to 100V continuous (105V transient), supports fast switching at multi-MHz frequencies, and maintains output stability during high dv/dt events on HS (up to 50 V/ns) without false triggering or supply glitch sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 8V to 14V - Enables direct use with standard 12V intermediate bus rails without external regulation. |
| HS Voltage Rating | −1V to 100V continuous - Supports primary-side switching in telecom forward and active-clamp topologies. |
| Peak Output Current | 3A pull-up / 4A pull-down - Drives large gate capacitances (e.g., 1nF) with 9ns/7.5ns rise/fall times, reducing MOSFET switching losses. |
| Propagation Delay Matching | tMON ≤16 ns, tMOFF ≤16 ns - Ensures tight dead-time control between HO and LO, critical for ZVS/ZCS soft-switching designs. |
| Bootstrap Diode | On-chip 1W diode with VF = 0.7V @ 100mA - Eliminates external diode, simplifies layout, and improves reliability in high-reliability power supplies. |
| Input Compatibility | 3.3V/TTL logic (VIH = 1.8–2.2 V, VIL = 1.2–1.8 V) - Direct interface with microcontrollers, PWM controllers, and digital signal sources without level-shifting. |
| Thermal Resistance | θJA = 40°C/W - Enables 3.0W max power dissipation at +25°C ambient, suitable for compact, high-density board layouts. |
Pinout & Package
ISL2111ARTZ-T uses a 10-lead 4×4 mm Thin Dual Flat No-Lead (TDFN) package with exposed pad (EPAD) for thermal enhancement. The EPAD is electrically isolated and must be connected to PCB ground plane for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side driver supply | Positive supply rail for LO driver and logic; bypass to VSS with ≥1µF ceramic capacitor. |
| HB | High-side bootstrap supply | Connects to positive terminal of external bootstrap capacitor; integrates 1W diode from VDD. |
| HO | High-side gate output | Drives gate of high-side N-MOSFET; referenced to HS, not VSS. |
| HS | High-side source connection | Connects to source of high-side MOSFET; serves as return path for bootstrap capacitor and reference for HO. |
| NC | No connect | Pin 5 is unconnected; must remain floating per datasheet. |
| LO | Low-side gate output | Drives gate of low-side N-MOSFET; referenced to VSS (ground). |
| VSS | Ground reference | Common return for VDD, LI, HI, and LO; requires low-inductance connection to system ground. |
| LI | Low-side input | CMOS/TTL-compatible control signal for LO; accepts 0–VDD logic levels. |
| HI | High-side input | CMOS/TTL-compatible control signal for HO; independent of LI for flexible PWM or complementary drive. |
| NC | No connect | Pin 10 is unconnected; must remain floating per datasheet. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | 1W rated, 0.7V forward drop @ 100mA - Reduces BOM count and eliminates diode selection, placement, and thermal derating concerns. |
| 100V HS voltage capability | Rated for −1V to 100V continuous HS swing - Enables use in 48V-input telecom DC/DC converters without external level-shifting or isolation. |
| Tight propagation delay matching | tMON/tMOFF ≤16 ns over −40°C to +125°C - Minimizes shoot-through risk and enables precise dead-time tuning in high-efficiency resonant converters. |
| Fast switching performance | 9ns rise / 7.5ns fall into 1nF load - Supports >1 MHz switching frequencies while maintaining low gate drive loss. |
| Robust supply immunity | Outputs unaffected by VDD glitches, HS ringing below ground, or high dv/dt on HS - Ensures reliable operation in noisy, high-power environments. |
Applications
| Telecom Half-Bridge DC/DC Converters | Active-Clamp Forward Converters |
|---|---|
|
Use Scenario: Primary-side half-bridge switching in 48V-input telecom power supplies delivering 12V/50A output. IC Role / Device Role / Timing Role: High- and low-side gate driver enabling synchronous rectification and zero-voltage switching (ZVS) control. Use Value: Integrated bootstrap diode and 100V HS rating eliminate external components and support direct 48V bus operation with minimal layout area. |
Use Scenario: Active-clamp reset circuit in forward topology for server VRMs requiring high efficiency at light loads. IC Role / Device Role / Timing Role: Precise timing-matched HO/LO outputs ensure clamp FET turn-on before main switch turn-off, minimizing voltage overshoot. Use Value: ≤16 ns delay matching and 7.5 ns fall time enable clean clamp waveform generation and reduce snubber losses. |
| Two-Switch Forward Converters | Class-D Audio Amplifiers |
|
Use Scenario: Isolated 24V-to-12V forward converter in industrial PoE injectors with strict EMI requirements. IC Role / Device Role / Timing Role: Dual independent inputs allow asymmetric PWM control for duty cycle optimization and transformer flux balancing. Use Value: Independent HI/LI inputs and 3.3V/TTL compatibility simplify interface with digital controllers and improve noise immunity in EMI-sensitive systems. |
Use Scenario: Full-bridge output stage in high-fidelity Class-D audio amplifiers operating at 300–500 kHz switching frequency. IC Role / Device Role / Timing Role: Gate driver delivering fast, matched transitions to minimize crossover distortion and electromagnetic emissions. Use Value: 9ns/7.5ns rise/fall times into 1nF load and low output impedance (1.6W/1W typical RON) preserve audio signal integrity and reduce THD+N. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL2111ABZ-T | 8-lead SOIC package; θJA = 95°C/W; no EPAD; larger footprint and higher thermal resistance. | Suitable for lower-power, cost-sensitive designs where PCB space and thermal density are less constrained. | Select ISL2111ABZ-T when SOIC assembly infrastructure exists and thermal budget allows higher junction temperature rise. |
| ISL2111AR4Z-T | 12-lead 4×4 mm DFN; θJA = 39°C/W; includes EPAD; identical electrical specs but different pinout and layout. | Better thermal performance than ISL2111ARTZ-T; preferred for >3W average power dissipation or extended temperature range operation. | Choose ISL2111AR4Z-T when maximum thermal headroom is required and board layout can accommodate 12-pin DFN footprint. |
Compared with ISL2111ABZ-T, ISL2111ARTZ-T offers 58% lower θJA and smaller footprint; versus ISL2111AR4Z-T, it trades one pin (12 vs. 10) and slightly higher θJA (40 vs. 39°C/W) for simplified routing and reduced component count in space-constrained telecom modules.
Availability
ISL2111ARTZ-T is available at Aetrix Electronics and suitable for telecom DC/DC converters, active-clamp forward supplies, and Class-D audio amplifiers requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.
Supply support for ISL2111ARTZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and timing solutions for automotive, industrial, and communications markets.
The ISL2111ARTZ-T belongs to Renesas' high-voltage half-bridge driver product line, designed specifically for high-efficiency, high-frequency isolated DC/DC conversion in telecom and server power applications.
FAQ
What is the maximum allowable HS voltage for ISL2111ARTZ-T in continuous operation?
The ISL2111ARTZ-T supports HS node voltages from −1V to +100V under continuous operation, as specified in the Absolute Maximum Ratings table. This rating enables direct use in 48V-input telecom power supplies with sufficient margin for transient spikes up to 105V for <100ns durations.
Does ISL2111ARTZ-T require an external bootstrap diode?
No, ISL2111ARTZ-T integrates a 1W on-chip bootstrap diode with 0.7V forward voltage at 100mA. External diode omission reduces component count, PCB area, and potential failure points-confirmed in the Features section and Electrical Specifications (VDH parameter).
What input logic levels does ISL2111ARTZ-T accept?
ISL2111ARTZ-T accepts 3.3V/TTL-compatible inputs: VIH = 1.8–2.2 V (typical), VIL = 1.2–1.8 V (typical). These thresholds are explicitly defined in the Electrical Specifications table for ISL2111 variants and verified across −40°C to +125°C.
How is thermal performance affected by the EPAD on ISL2111ARTZ-T?
The EPAD on ISL2111ARTZ-T is electrically isolated and must be connected to the PCB ground plane to achieve θJA = 40°C/W. Leaving it unconnected degrades thermal resistance significantly; datasheet Figure 6 and Thermal Information table confirm this requirement for rated 3.0W dissipation.
Can ISL2111ARTZ-T drive both high-side and low-side N-MOSFETs simultaneously in a half-bridge configuration?
Yes, ISL2111ARTZ-T is explicitly designed as a dual N-channel half-bridge driver. HO drives the gate of the high-side N-MOSFET referenced to HS, while LO drives the low-side N-MOSFET referenced to VSS-verified in Functional Block Diagram (Figure 2), Pin Descriptions, and Applications list.
ISL2111ARTZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 14V
- Logic Voltage - VIL, VIH:
- 1.4V, 2.2V
- Current - Peak Output (Source, Sink):
- 3A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 9ns, 7.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-TDFN (4x4)
ISL2111ARTZ-T FAQ
1.How can I place an order for ISL2111ARTZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL2111ARTZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL2111ARTZ-T reliable?
The price and inventory of ISL2111ARTZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL2111ARTZ-T is usually 5 days.
3.What payment methods are accepted for ISL2111ARTZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL2111ARTZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL2111ARTZ-T?
ISL2111ARTZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL2111ARTZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL2111ARTZ-T?
For technical support, including ISL2111ARTZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL2111ARTZ-T requirements.
6.How does Aetrix verify that ISL2111ARTZ-T is sourced from the original manufacturer or authorized distributors?
All ISL2111ARTZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL2111ARTZ-T meets industry standards.
7.What is the process for return or replacement of ISL2111ARTZ-T?
All ISL2111ARTZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL2111ARTZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL2111ARTZ-T part is unused and in its original packaging.
Return procedure for ISL2111ARTZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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