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Renesas ISL2111BR4Z
- Part No.:
- ISL2111BR4Z
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
ISL2111BR4Z.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,232
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Product details
Overview
ISL2111BR4Z from Renesas Electronics is a 100V, 3A/4A peak high-frequency half-bridge N-channel MOSFET driver IC in an 8-lead 4×4mm DFN package. It features TTL/3.3V-compatible inputs, on-chip 1W bootstrap diode, 8–14V VDD operating range, and 9ns/7.5ns rise/fall times driving 1nF loads-enabling efficient telecom DC/DC converters and active-clamp forward topologies.
For engineers reviewing the ISL2111BR4Z datasheet, ISL2111BR4Z pinout, ISL2111BR4Z application, or ISL2111BR4Z equivalent, this page delivers verified electrical specs, thermal performance data, bootstrap diode characteristics, propagation delay matching (≤16ns), and real-world timing behavior across -40°C to +125°C.
Technical Context
The ISL2111BR4Z integrates independent high-side and low-side drivers with level-shifted high-side control, undervoltage lockout on both VDD and HB rails, and robust noise immunity via rail-to-rail input compatibility. Its internal bootstrap diode supports up to 114V HB voltage with ≤1Ω dynamic resistance and <10ns switching time.
It delivers matched turn-on/off propagation delays (tLPLH/tHPLH ≤50ns typ, tMON/tMOFF ≤16ns max) and maintains stable output drive strength across temperature (±0.25V VOHL/VOLH variation from -40°C to +125°C), enabling reliable multi-MHz switching in isolated half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 8V to 14V - enables operation directly from standard 12V intermediate bus without LDO regulation |
| Peak Output Current | 3A pull-up / 4A pull-down - eliminates external totem-pole buffers for typical gate charges ≤50nC |
| Rise/Fall Time | 9ns / 7.5ns into 1nF - supports >20MHz switching frequencies with minimal dead-time uncertainty |
| Input Thresholds | VIH = 1.8V, VIL = 1.4V (TTL/3.3V compatible) - ensures direct interface with microcontrollers and PWM controllers |
| Bootstrap Diode Max Voltage | 114V HB rating - supports high-side operation up to 100V HS continuous, 105V transient |
| Delay Matching | tMON ≤16ns, tMOFF ≤16ns - minimizes shoot-through risk in hard-switched half-bridges |
| Thermal Resistance | θJA = 40°C/W (DFN-8) - allows 3.1W max power dissipation at +25°C ambient with standard PCB copper |
Pinout & Package
ISL2111BR4Z uses an 8-lead 4×4mm DFN package (PKG DWG L8.4x4) with exposed pad (EPAD) electrically isolated and recommended for connection to PCB ground plane for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Positive supply for low-side driver and logic | Bypass to VSS with ≥1µF ceramic capacitor; powers internal circuitry and LO stage |
| HB | High-side bootstrap supply input | Connects to positive terminal of external bootstrap capacitor; feeds internal HO driver |
| HO | High-side gate output | Drives gate of high-side N-MOSFET; referenced to HS, not VSS |
| HS | High-side source connection | Connects to source of high-side MOSFET; forms return path for bootstrap capacitor |
| LO | Low-side gate output | Drives gate of low-side N-MOSFET; referenced to VSS (ground) |
| VSS | Chip ground reference | Common return for VDD, LI, HI, and LO; must be low-inductance connection to system ground |
| LI | Low-side input | TTL/3.3V-compatible digital input controlling LO output state |
| HI | High-side input | TTL/3.3V-compatible digital input controlling HO output state; rail-to-rail tolerant |
Key Features
| Feature | Design Value |
|---|---|
| On-chip bootstrap diode | 1W rating, 0.7V forward drop at 100mA, ≤1Ω dynamic resistance - eliminates discrete diode and saves board space |
| Rail-to-rail input tolerance | HI/LI accept voltages from -0.3V to VDD+0.3V - prevents latch-up during HS ringing or supply transients |
| Supply undervoltage protection | VDD UVLO threshold 6.6V ±0.5V with 0.6V hysteresis - prevents erratic switching during brown-out conditions |
| High dv/dt immunity | Outputs unaffected by HS slewing up to 50V/ns - ensures reliable operation in fast-switching GaN-based designs |
| Pb-free RoHS compliance | Matte tin (e3) termination, MSL3 per J-STD-020 - supports lead-free reflow and long-term supply chain sustainability |
Applications
| Telecom Half-Bridge DC/DC Converters | Active-Clamp Forward Converters |
|---|---|
Use Scenario: 48V input telecom power supply delivering regulated 12V/30A output using synchronous rectification and zero-voltage switching. IC Role / Device Role / Timing Role: ISL2111BR4Z drives high-side and low-side N-MOSFETs in half-bridge configuration, providing matched 38ns/32ns propagation delays and <16ns delay skew to minimize dead-time uncertainty. Use Value: Enables >95% efficiency at 500kHz switching with no external gate buffers, reducing BOM count and layout complexity. |
Use Scenario: Isolated 48V-to-12V forward converter with active-clamp reset, used in base station RF power amplifiers. IC Role / Device Role / Timing Role: ISL2111BR4Z controls main switch and active-clamp FET with independent HI/LI inputs, leveraging rail-to-rail input tolerance to withstand 100V HS node transients. Use Value: On-chip 114V-rated bootstrap diode eliminates external diode failure mode and improves reliability under high dv/dt stress. |
| Two-Switch Forward Converters | Class-D Audio Amplifiers |
Use Scenario: Industrial 24V-input two-switch forward converter powering FPGA and ASIC core rails with tight transient response. IC Role / Device Role / Timing Role: ISL2111BR4Z drives primary-side switches with 9ns/7.5ns rise/fall times into 1nF load, supporting 1MHz operation while maintaining <50ns total propagation delay. Use Value: Wide 8–14V VDD range allows direct use of unregulated 12V bias rail, eliminating auxiliary LDO and associated losses. |
Use Scenario: High-fidelity 200W Class-D amplifier with dual half-bridge outputs driving 4Ω speakers. IC Role / Device Role / Timing Role: ISL2111BR4Z provides high-current gate drive (3A/4A peak) to paralleled MOSFETs per channel, minimizing conduction losses and thermal stress. Use Value: Low 0.16V VOHL and 0.1V VOLH ensure minimal gate drive voltage loss, preserving PWM fidelity and reducing THD+N. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL2111AR4Z | 12-lead DFN (4×4mm), includes NC pins and EPAD; same electrical specs but larger footprint | Higher thermal capacity (θJA = 39°C/W) and higher max power (3.1W), suited for sustained >1A gate current | Select ISL2111AR4Z when board layout allows larger package and thermal margin is critical |
| UCC27211D | Texas Instruments part; 4A/4A peak, 12V–16V VDD, no integrated bootstrap diode, SOIC-8 only | Requires external bootstrap diode and capacitor; lacks rail-to-rail input tolerance (max VI = VDD+0.3V only) | Choose UCC27211D only if existing design uses SOIC-8 and external bootstrap is already implemented |
Compared with ISL2111AR4Z, ISL2111BR4Z offers identical drive strength and timing but in a smaller 8-pin DFN footprint with reduced thermal mass-ideal for space-constrained telecom modules. Against UCC27211D, ISL2111BR4Z provides integrated bootstrap diode and superior input voltage tolerance, simplifying layout and improving noise immunity.
Availability
ISL2111BR4Z is available at Aetrix Electronics and suitable for telecom DC/DC converters, active-clamp forward supplies, two-switch forward topologies, and Class-D audio amplifiers requiring stable component supply, full traceability, and lifecycle continuity support.
Supply support for ISL2111BR4Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering high-performance analog, power, and embedded processing solutions for industrial, automotive, and communications infrastructure markets.
The ISL2111BR4Z belongs to Renesas' high-voltage gate driver product line, engineered specifically for efficiency-critical isolated DC/DC conversion in telecom and server power systems where reliability, timing precision, and integration reduce system-level complexity.
FAQ
What is the maximum bootstrap capacitor voltage rating supported by the ISL2111BR4Z?
The ISL2111BR4Z supports a maximum bootstrap supply voltage (HB) of 114VDC, enabling high-side operation up to 100V continuous on the HS node. This rating is validated per Absolute Maximum Ratings and confirmed in Figure 24 of the FN6295 datasheet, which defines the VHS vs. VDD derating curve. The on-chip bootstrap diode is rated for 100mA average current and exhibits ≤0.9V forward drop at that level.
Does the ISL2111BR4Z require external components for bootstrap operation?
Yes, the ISL2111BR4Z requires an external bootstrap capacitor connected between HB and HS pins. However, it integrates a 1W-rated bootstrap diode, eliminating the need for an external diode. A typical design uses a 0.1µF–0.22µF X7R ceramic capacitor placed close to the HB/HS pins, with low-ESR characteristics to sustain high-frequency charge transfer without voltage droop.
How does the ISL2111BR4Z handle high dv/dt noise on the high-side source (HS) node?
The ISL2111BR4Z incorporates level-shift circuitry with inherent immunity to HS node slewing up to 50V/ns, as specified in the Maximum Recommended Operating Conditions. Its outputs remain unaffected by HS ringing below ground or rapid HS transitions, ensuring reliable HO switching even in GaN-based designs with >100V/ns edge rates. This is achieved through robust isolation between the floating high-side domain and the logic ground domain.
What is the thermal performance difference between ISL2111BR4Z and ISL2111ABZ (SOIC-8)?
The ISL2111BR4Z (8-lead DFN) has θJA = 40°C/W and max power dissipation of 3.1W at +25°C, while the ISL2111ABZ (SOIC-8) has θJA = 95°C/W and max power dissipation of 1.3W. The DFN package's exposed pad enables significantly better heat transfer to the PCB ground plane, making ISL2111BR4Z preferable for high-duty-cycle or high-ambient-temperature applications where thermal headroom is constrained.
Can the ISL2111BR4Z drive both enhancement-mode and depletion-mode MOSFETs?
The ISL2111BR4Z is designed exclusively for enhancement-mode N-channel MOSFETs. Its HO and LO outputs are configured as source-following drivers (HO referenced to HS, LO referenced to VSS) with active pull-up/pull-down stages optimized for turning on enhancement devices. It does not support depletion-mode FETs, which require negative gate bias or constant-current sourcing not provided by this IC's architecture.
ISL2111BR4Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 14V
- Logic Voltage - VIL, VIH:
- 1.4V, 2.2V
- Current - Peak Output (Source, Sink):
- 3A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 9ns, 7.5ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (4x4)
ISL2111BR4Z FAQ
1.How can I place an order for ISL2111BR4Z through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL2111BR4Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL2111BR4Z reliable?
The price and inventory of ISL2111BR4Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL2111BR4Z is usually 5 days.
3.What payment methods are accepted for ISL2111BR4Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL2111BR4Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL2111BR4Z?
ISL2111BR4Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL2111BR4Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL2111BR4Z?
For technical support, including ISL2111BR4Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL2111BR4Z requirements.
6.How does Aetrix verify that ISL2111BR4Z is sourced from the original manufacturer or authorized distributors?
All ISL2111BR4Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL2111BR4Z meets industry standards.
7.What is the process for return or replacement of ISL2111BR4Z?
All ISL2111BR4Z units undergo pre-shipment inspection (PSI). If there is an issue with ISL2111BR4Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL2111BR4Z part is unused and in its original packaging.
Return procedure for ISL2111BR4Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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