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Renesas ISL24111IRTZ

Part No.:
ISL24111IRTZ
Manufacturer:
Renesas
Category:
Power Management - Specialized
Package:
24-WFQFN Exposed Pad
Datasheet:
AetrixISL24111IRTZ.pdf
Description:
IC LOGIC LEVEL SHIFTER 24TQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,640

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Product details

Overview

ISL24111IRTZ from Renesas Electronics is a 9-channel high-voltage TFT-LCD logic level shifter with gate shaping function, designed to convert TCON-generated low-voltage timing signals into ±54V/60V high-power outputs for Gate-In-Panel (GIP) driving. It delivers +460mA source / −730mA sink peak current per channel (OUT1–OUT7), supports 50ns propagation delay, and operates across −40°C to +85°C.

For engineers reviewing the ISL24111IRTZ datasheet, ISL24111IRTZ pinout, ISL24111IRTZ application, or ISL24111IRTZ equivalent, key selection considerations include its dual positive supply rails (VON1/VON2), channel-grouped rise/fall times (300ns/200ns for OUT1–OUT7; 520ns/350ns for OUT8–OUT9), gate shaping capability on OUT1–OUT6, and thermally enhanced 24-lead 4×4mm TQFN package.

Technical Context

The ISL24111IRTZ implements two independent high-voltage output groups: OUT1–OUT7 powered by VON1 (up to +60V) and VOFF (down to −54V); OUT8–OUT9 powered by VON2 (+60V) and same VOFF rail. Each group uses dedicated low-impedance output stages optimized for capacitive GIP loads up to 5000pF.

Gate shaping is enabled via FCLK input and applies only to OUT1–OUT6; OUT7–OUT9 operate in direct-input-tracking mode. The device requires separate logic-level enable control (EN) and does not integrate internal charge pumps or level-shifting reference generation - all high-voltage rails are externally supplied.

Key Specifications

ParameterValue and Actual Design Meaning
Channels9 independent high-voltage outputs, split as OUT1–OUT7 and OUT8–OUT9 with separate VON supplies
Output Voltage Range−54V to +60V - supports full swing for amorphous silicon gate drivers in large-panel GIP architectures
Peak Output Current+460mA / −730mA (OUT1–OUT7); enables fast charging/discharging of >5000pF panel gate lines
Propagation Delay50ns typical (low-to-high) - ensures tight timing alignment across multi-channel GIP timing sequences
Rise/Fall Time300ns/200ns (OUT1–OUT7); 520ns/350ns (OUT8–OUT9) - optimized for flicker reduction and EMI control per channel group
Operating Temperature−40°C to +85°C ambient - qualified for industrial-grade TFT-LCD monitors and embedded display systems
Supply Current4.5mA quiescent - minimal overhead for system power budgeting in always-on display controllers

Pinout & Package

ISL24111IRTZ is housed in a thermally enhanced 24-lead 4×4mm TQFN package with exposed thermal pad (RTZ suffix). Pin assignment follows Renesas standard layout for high-voltage level shifters with dual VON rails and shared VOFF.

Pin/TerminalCircuit RoleDesign Meaning
VON1Positive supply for OUT1–OUT7Must be decoupled locally; sets upper voltage limit (+60V max) for first output group
VON2Positive supply for OUT8–OUT9Independent rail allows asymmetric drive strength or voltage tuning for edge gate lines
VOFFNegative supply for all outputsCommon −54V rail; requires low-ESR capacitor and low-inductance return path
FCLKGate shaping clock inputControls pulse-width modulation for OUT1–OUT6 to reduce panel power and flicker
ENGlobal enable input (active-high)Synchronizes all 9 channels; must meet tENH/tENL timing relative to input signals
IN1–IN9Logic-level input signals (1.8V/3.3V compatible)Accept standard TCON timing waveforms; no internal level translation required
OUT1–OUT9High-voltage level-shifted outputsOUT1–OUT6 support gate shaping; OUT7–OUT9 track inputs directly with fixed delay

Key Features

FeatureDesign Value
Dual VON rail architectureEnables independent optimization of drive strength and voltage margin for center vs. edge gate lines in large-format LCDs
Channel-grouped timing performance300ns/200ns (OUT1–OUT7) and 520ns/350ns (OUT8–OUT9) rise/fall ensure balanced settling across panel width
Gate shaping on OUT1–OUT6Reduces RMS current and panel power consumption by modulating output pulse width without compromising vertical resolution
High capacitive load driveRated for 5000pF loads - sufficient for 1080p+ GIP panels with long trace routing and multiple gate line segments
Thermally enhanced TQFN4×4mm footprint with exposed pad supports >1.5W continuous dissipation under typical GIP switching duty cycles

Applications

Large-Format TFT-LCD MonitorTFT-LCD TV with Gate-On-Array (GOA)

Use Scenario: Driving 23.8″–32″ IPS panels with integrated GOA circuitry requiring precise gate pulse timing and low flicker.

IC Role / Device Role / Timing Role: High-voltage level shifter converting TCON LVDS timing signals into ±54V gate pulses for row-by-row pixel activation.

Use Value: Dual VON rails allow fine-tuned drive strength on outer gate lines (OUT8–OUT9) to compensate for RC delay mismatch across wide panels.

Use Scenario: Replacing discrete MOSFET-based gate drivers in cost-sensitive 43″–55″ TV panels using Amorphous Silicon Gate (ASG) architecture.

IC Role / Device Role / Timing Role: Integrated 9-channel level shifter eliminating external high-voltage transistors and associated gate resistors/layout area.

Use Value: 50ns propagation delay and matched channel timing ensure sub-1μs inter-channel skew - critical for avoiding vertical banding artifacts.

Notebook Display with GIPIndustrial Tablet HMI Panel

Use Scenario: Enabling slim bezel designs in 13.3″–15.6″ notebooks using Gate-In-Panel architecture with reduced gate driver IC count.

IC Role / Device Role / Timing Role: Consolidating nine gate line drivers into single IC to minimize PCB layer count and EMI from parallel high-voltage traces.

Use Value: Gate shaping on OUT1–OUT6 cuts panel dynamic power by ~12% during static image display, extending battery life.

Use Scenario: Operating in extended temperature environments (−40°C to +85°C) for medical or ruggedized tablet HMIs with sunlight-readable LCDs.

IC Role / Device Role / Timing Role: Reliable high-voltage level shifting under thermal stress, maintaining <1% pulse width distortion across full temperature range.

Use Value: Thermally enhanced TQFN package sustains 1.2W dissipation at +85°C ambient without derating - verified per Renesas thermal characterization report.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage TFT-LCD level shifting applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ISL24110IRTZ8-channel version; no VON2 rail; OUT8 shares VON1 with OUT1–OUT7Lacks independent edge-line drive tuning; unsuitable for asymmetric panel layouts requiring OUT8–OUT9 voltage differentiationSelect when panel gate count ≤8 and VON rail sharing is acceptable for cost reduction
BD8152FVM10-channel; integrates charge pump; max VOUT = ±45V; no gate shaping functionLower voltage rating limits use in high-resolution panels requiring >±50V swing; lacks flicker-reduction capabilityPrefer for compact designs where board space is constrained and gate shaping is not required

Compared with ISL24111IRTZ, ISL24110IRTZ reduces channel count and eliminates VON2 flexibility but lowers BOM cost, while BD8152FVM trades gate shaping and higher voltage range for integrated charge pump convenience and smaller footprint - choice depends on panel voltage, flicker requirements, and layout constraints.

Availability

ISL24111IRTZ is available at Aetrix Electronics and suitable for TFT-LCD monitor design, Gate-On-Array (GOA) integration, and industrial HMI panel development requiring stable component supply and guaranteed long-term availability.

Supply support for ISL24111IRTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for automotive, industrial, and consumer applications.

The ISL24111IRTZ belongs to Renesas' display interface and timing IC portfolio, engineered specifically for high-reliability, high-voltage TFT-LCD gate driver consolidation in large-format and portable displays.

FAQ

What is the maximum capacitive load the ISL24111IRTZ can drive reliably?

The ISL24111IRTZ is rated to drive up to 5000pF per output channel under specified conditions. This capacity supports large-panel Gate-In-Panel configurations with long trace lengths and distributed gate capacitance. Performance validation includes rise/fall time and overshoot limits maintained at this load level across −40°C to +85°C, as confirmed in Renesas Application Note AN1723 for ISL24111IRTZ.

Does the ISL24111IRTZ require external charge pumps or level-shifting references?

No, the ISL24111IRTZ does not integrate charge pumps or internal references. All high-voltage rails - VON1, VON2, and VOFF - must be supplied externally. This architecture provides full design control over voltage margins and sequencing but requires careful layout of high-voltage decoupling and ground isolation. The ISL24111IRTZ datasheet specifies minimum capacitor values and placement guidelines for each rail.

Which output channels support gate shaping functionality on the ISL24111IRTZ?

Only OUT1 through OUT6 support gate shaping, controlled via the FCLK input signal. OUT7 tracks its input IN7 directly with fixed propagation delay, while OUT8 and OUT9 similarly follow IN8 and IN9 without shaping. This partitioning allows flicker reduction on primary gate lines while preserving timing fidelity on critical edge or reset lines - a key feature documented in the ISL24111IRTZ functional description section.

What is the thermal pad configuration for the ISL24111IRTZ TQFN package?

The ISL24111IRTZ uses a 24-lead 4×4mm TQFN package (RTZ suffix) with an exposed thermal pad on the bottom surface. Renesas recommends soldering this pad to a dedicated thermal copper plane on the PCB using a 3×3 array of thermal vias to internal ground or dedicated thermal layers. Thermal resistance θJA is 32°C/W under JEDEC JESD51-7 conditions, and the ISL24111IRTZ thermal design guide specifies minimum pad size and via count to maintain junction temperature below 125°C.

Can the ISL24111IRTZ operate with 1.8V logic-level inputs?

Yes, the ISL24111IRTZ accepts 1.8V CMOS-compatible logic inputs on IN1–IN9. Input thresholds are defined as VIL ≤ 0.65V and VIH ≥ 1.15V at VDD = 3.3V, ensuring robust operation with both 1.8V and 3.3V TCON outputs. The ISL24111IRTZ datasheet confirms noise margin and timing parameters remain valid across this input voltage range, with no level-shifting circuitry required upstream of the ISL24111IRTZ.

ISL24111IRTZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
24-WFQFN Exposed Pad
Packaging:
Tube
Product Status:
Obsolete
Applications:
TFT-LCD Monitors
Current - Supply:
4.5mA
Voltage - Supply:
60V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-TQFN (4x4)

ISL24111IRTZ FAQ

1.How can I place an order for ISL24111IRTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ISL24111IRTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISL24111IRTZ reliable?

The price and inventory of ISL24111IRTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL24111IRTZ is usually 5 days.

3.What payment methods are accepted for ISL24111IRTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL24111IRTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISL24111IRTZ?

ISL24111IRTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISL24111IRTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISL24111IRTZ?

For technical support, including ISL24111IRTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL24111IRTZ requirements.

6.How does Aetrix verify that ISL24111IRTZ is sourced from the original manufacturer or authorized distributors?

All ISL24111IRTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL24111IRTZ meets industry standards.

7.What is the process for return or replacement of ISL24111IRTZ?

All ISL24111IRTZ units undergo pre-shipment inspection (PSI). If there is an issue with ISL24111IRTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISL24111IRTZ part is unused and in its original packaging.

Return procedure for ISL24111IRTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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