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Renesas ISL6208BIRZ-T
- Part No.:
- ISL6208BIRZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-VFDFN Exposed Pad
- Datasheet:
-
ISL6208BIRZ-T.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:624
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Product details
Overview
ISL6208BIRZ-T from Intersil is a high-voltage synchronous rectified buck MOSFET driver IC designed to drive two N-channel power MOSFETs in mobile CPU core voltage regulators. It delivers 4A typical sink current on the lower gate, supports up to 2MHz switching frequency, features adaptive shoot-through protection, and integrates an internal Schottky bootstrap diode. It is used in Intel® and AMD® mobile microprocessor core voltage supplies.
For engineers reviewing the ISL6208BIRZ-T datasheet, ISL6208BIRZ-T pinout, ISL6208BIRZ-T application, or ISL6208BIRZ-T equivalent, key selection criteria include its 8-lead 2×2 DFN package with exposed thermal pad, -40°C to +100°C operating temperature range, 0.5Ω lower gate sink resistance, diode emulation for light-load efficiency, and three-state PWM input for controlled shutdown during CPU sleep states.
Technical Context
The ISL6208BIRZ-T implements adaptive shoot-through protection by monitoring LGATE and UGATE-to-PHASE voltages, enabling UGATE only after LGATE falls below 1V and allowing LGATE rise only after UGATE-to-PHASE drops below 1V. Its internal bootstrap Schottky diode eliminates external diode requirements and enables efficient high-side drive in buck topologies.
It accepts a three-state PWM input with defined rising (0.7–1.3V) and falling (3.5–4.1V) thresholds to enter shutdown mode, and uses FCCM pin control to enable/disable diode emulation-allowing discontinuous conduction mode (DCM) when FCCM is low. Propagation delays are tightly specified: tPDLL = 25ns (typ), tPDLU = 18ns (typ), tPDHL = 20ns (typ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Supply Current | 80µA at 5V - enables ultra-low quiescent power in always-on system states |
| Lower Gate Sink Resistance | 0.5Ω (typ) - ensures robust turn-off of low-side MOSFET under high dv/dt phase node conditions |
| Switching Frequency Support | Up to 2MHz - allows compact magnetics and fast transient response in high-density VRMs |
| UGATE/LGATE Propagation Delay | tPDHU/tPDHL = 20ns (typ), tPDLU = 18ns (typ), tPDLL = 25ns (typ) - minimizes dead-time uncertainty and improves timing margin |
| Diode Emulation Enable | FCCM pin-controlled - permits zero-current detection and automatic DCM entry for >90% light-load efficiency |
| Bootstrap Diode Forward Voltage | 0.55V (typ) at 2mA - reduces boot rail loss and improves high-side drive reliability |
| Three-State Shutdown Hold-off | 175ns (typ) - ensures glitch immunity while enabling rapid, deterministic power stage disable |
Pinout & Package
ISL6208BIRZ-T is housed in an 8-lead 2×2 mm DFN package (JEDEC MO-220 L8.2x2D) with exposed thermal pad, optimized for high-power density and thermal performance in mobile VRMs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - VCC | Bias supply input | Accepts 5V ±10% regulated supply; requires local 1µF ceramic bypass to GND |
| 2 - PWM | Three-state control input | Drives both gates; enters shutdown when held within 0.7–4.1V window for ≥175ns |
| 3 - GND | Power and signal reference | Must be connected to low-impedance ground plane; ties to thermal pad for thermal conduction |
| 4 - LGATE | Low-side gate driver output | Delivers 4A sink / 2A source into MOSFET gate; drives N-channel MOSFET source to GND |
| 5 - VCC (redundant) | Bias supply input | Second VCC pin for improved decoupling; must be tied to same 5V rail as Pin 1 |
| 6 - FCCM | Diode emulation control | LOW enables DCM via zero-current detection; HIGH forces continuous conduction mode |
| 7 - UGATE | High-side gate driver output | Drives N-channel MOSFET gate referenced to PHASE; requires bootstrap capacitor to PHASE |
| 8 - BOOT | Floating high-side supply | Connected to bootstrap capacitor; internal Schottky diode charges cap from VCC during low-side conduction |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Monitors real-time LGATE and UGATE-to-PHASE voltages to enforce safe dead-time without fixed delay circuits |
| Internal bootstrap Schottky diode | Eliminates external diode, reduces BOM count, and improves boot capacitor charging efficiency at high frequencies |
| Diode emulation with FCCM control | Enables monotonic start-up into pre-biased outputs and boosts light-load efficiency by forcing DCM |
| Three-state PWM input | Provides deterministic, low-latency shutdown path for CPU deep-sleep states without requiring controller reconfiguration |
| 0.5Ω lower gate sink resistance | Prevents shoot-through during high dv/dt phase transitions by rapidly discharging low-side gate capacitance |
Applications
| Mobile CPU Core Voltage Regulation | High-Frequency DC/DC Converters |
|---|---|
Use Scenario: Regulating core voltage for Intel® Core™ i-series and AMD® Ryzen™ Mobile processors in ultrabooks and 2-in-1 devices. IC Role / Device Role / Timing Role: Dual gate driver controlling high- and low-side N-MOSFETs in multiphase buck converters synchronized to Intersil PWM controllers. Use Value: Enables >95% peak efficiency and sub-100ns transient response while supporting dynamic voltage scaling (DVFS) across 0.5–1.5V output range. | Use Scenario: Compact, low-profile point-of-load (POL) converters in space-constrained networking and storage modules. IC Role / Device Role / Timing Role: High-speed gate driver enabling 1.5–2MHz operation with minimal propagation skew between UGATE and LGATE outputs. Use Value: Reduces inductor and capacitor size by >40% versus 500kHz designs while maintaining tight output regulation under 10A step loads. |
| High-Input-Voltage Buck Converters | Pre-Biased Output Start-Up Systems |
Use Scenario: Converting 12V or 19V adapter inputs down to 1.0V/30A for GPU or SoC rails in thin-and-light laptops. IC Role / Device Role / Timing Role: High-voltage tolerant driver (30V phase rating) managing large voltage step-down ratios with robust shoot-through immunity. Use Value: Supports wide input range without external level-shifting; withstands -10V phase undershoot pulses without latch-up or damage. | Use Scenario: Power sequencing in systems where downstream rails are powered before the ISL6208BIRZ-T's VCC is stable (e.g., hot-plug modules). IC Role / Device Role / Timing Role: Diode emulation-enabled driver that starts cleanly into pre-biased outputs without reverse current or output overshoot. Use Value: Eliminates need for external reverse-blocking FETs or Schottky diodes, reducing solution cost and footprint by 25%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6208BCRZ-T | Identical electrical specs and pinout; differs only in 3×3 QFN package (L8.3x3) vs. 2×2 DFN (L8.2x2D) | Higher θJA (80°C/W vs. 89°C/W) and larger PCB footprint; better suited for thermally relaxed layouts | Select ISL6208BCRZ-T when board layout allows 3×3 mm area and thermal pad connection is less constrained. |
| MP86553DQKT-LF-Z | Supports 1.5MHz max switching, lacks diode emulation and three-state PWM; 0.65Ω lower gate RDS(on) | Targeted at cost-sensitive industrial DC/DC; not qualified for mobile CPU VRMs with aggressive light-load efficiency requirements | Choose MP86553DQKT-LF-Z only for non-mobile applications where FCCM control and monotonic start-up are not required. |
Compared with ISL6208BCRZ-T, ISL6208BIRZ-T offers superior PCB area efficiency and slightly better thermal resistance in the 2×2 DFN package, while MP86553DQKT-LF-Z trades advanced control features for lower unit cost in fixed-frequency industrial converters.
Availability
ISL6208BIRZ-T is available at Aetrix Electronics and suitable for mobile computing power delivery, high-frequency POL converters, and high-input-voltage buck regulators requiring stable component supply across extended production lifecycles.
Supply support for ISL6208BIRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil Corporation is a leading provider of precision analog and power management solutions, now part of Renesas Electronics, with deep expertise in high-efficiency DC/DC conversion for mobile and computing platforms.
The ISL6208 family was designed specifically for synchronous buck gate driving in Intel/AMD mobile CPU core voltage regulators, emphasizing shoot-through immunity, light-load efficiency, and seamless integration with multiphase PWM controllers.
FAQ
What is the maximum allowable PHASE node voltage for ISL6208BIRZ-T?
The ISL6208BIRZ-T supports a PHASE node voltage of GND − 10V (for <20ns pulses, 10µJ) and up to +30V DC. This rating enables robust operation in high-step-down buck converters where negative ringing may occur during fast switching transitions. The device's internal circuitry is hardened to prevent latch-up or damage under these transient conditions, making ISL6208BIRZ-T suitable for demanding mobile VRM applications.
Does ISL6208BIRZ-T require an external bootstrap diode?
No, ISL6208BIRZ-T integrates a Schottky bootstrap diode internally, eliminating the need for an external diode in the BOOT-to-VCC path. This reduces component count, PCB area, and potential failure points. Users must still place a ceramic bootstrap capacitor between BOOT and PHASE pins, sized per Equation 1 in the datasheet (e.g., ≥0.15µF for 25nC gate charge and 200mV droop). The internal diode's 0.55V forward drop ensures efficient charging even at high frequencies.
How does the three-state PWM input function in ISL6208BIRZ-T?
The three-state PWM input in ISL6208BIRZ-T detects when the PWM signal remains within a 0.7–4.1V window for ≥175ns (typ), triggering full shutdown: both UGATE and LGATE are pulled low and held. This provides deterministic, low-latency power stage disable during CPU sleep states without relying on controller-level sequencing. Once the PWM exits the window, normal operation resumes immediately. This feature is critical for Intel® S3/S4 state compliance and eliminates need for external logic or hold-off timers in ISL6208BIRZ-T designs.
What is the purpose of the FCCM pin on ISL6208BIRZ-T?
The FCCM pin on ISL6208BIRZ-T controls diode emulation mode: when FCCM is driven LOW, the driver detects inductor zero-crossing and turns off LGATE to enable discontinuous conduction mode (DCM), improving light-load efficiency and enabling monotonic start-up into pre-biased outputs. When FCCM is HIGH, continuous conduction mode (CCM) is enforced regardless of load. This pin provides system-level control over efficiency vs. noise trade-offs and is essential for meeting mobile platform idle power targets.
Can ISL6208BIRZ-T drive 3000pF gate loads at 2MHz with specified timing?
Yes, ISL6208BIRZ-T is characterized to drive 3000pF loads with 8ns rise/fall times and ≤10ns transition times at 5V VCC, supporting reliable 2MHz operation. Propagation delays remain tightly controlled: tPDHU/tPDHL = 20ns (typ), tPDLU = 18ns (typ), tPDLL = 25ns (typ). These parameters are verified across temperature and process corners, ensuring timing margin in high-frequency mobile VRMs. The 0.5Ω lower gate sink resistance further guarantees fast discharge under high dv/dt conditions, preventing shoot-through at full switching speed.
ISL6208BIRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-VFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 0.5V, 2V
- Current - Peak Output (Source, Sink):
- 2A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 33 V
- Rise / Fall Time (Typ):
- 8ns, 8ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (2x2)
ISL6208BIRZ-T FAQ
1.How can I place an order for ISL6208BIRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6208BIRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6208BIRZ-T reliable?
The price and inventory of ISL6208BIRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6208BIRZ-T is usually 5 days.
3.What payment methods are accepted for ISL6208BIRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6208BIRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6208BIRZ-T?
ISL6208BIRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6208BIRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6208BIRZ-T?
For technical support, including ISL6208BIRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6208BIRZ-T requirements.
6.How does Aetrix verify that ISL6208BIRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6208BIRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6208BIRZ-T meets industry standards.
7.What is the process for return or replacement of ISL6208BIRZ-T?
All ISL6208BIRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6208BIRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6208BIRZ-T part is unused and in its original packaging.
Return procedure for ISL6208BIRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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