Renesas ISL6532ACRZ-T
- Part No.:
- ISL6532ACRZ-T
- Manufacturer:
- Renesas
- Category:
- Power Management - Specialized
- Package:
- 28-VQFN Exposed Pad
- Datasheet:
-
ISL6532ACRZ-T.pdf
- Description:
- IC REG/CTRLR ACPI DUAL DDR 28QFN
- Quantity:
- Payment:

- Shipping:

Inventory:4,812
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISL6532ACRZ-T from Renesas (formerly Intersil) is an ACPI-compliant dual-channel DDR/DDR2 memory power controller integrating a 250kHz synchronous buck PWM controller, a 3A sink-source VTT linear regulator, and a standby LDO for VDDQ - delivering ±2% output regulation across line, load, and temperature. It supports seamless S0/S1 ↔ S3 state transitions in ATX-based PCs and graphics cards, with integrated NCH backfeed control and PGOOD monitoring.
For engineers reviewing the ISL6532ACRZ-T datasheet, ISL6532ACRZ-T pinout, ISL6532ACRZ-T application, or ISL6532ACRZ-T equivalent, key selection considerations include its 28-pin 6×6 QFN package, triple-output architecture (VDDQ, VTT, VAGP), 0.8V reference accuracy, thermal shutdown at +140°C, and support for 5VSBY/3.3VSBY input rails in S3 state.
Technical Context
The ISL6532ACRZ-T implements voltage-mode PWM control with 250kHz fixed-frequency operation and fast transient response for the VDDQ buck stage, while its VTT regulator uses a precision VDDQ/2 divider reference buffered as VREF_OUT. The device integrates adaptive shoot-through protection on UGATE/LGATE and monitors all outputs for UV/OV faults with hiccup-mode recovery.
ACPI state management is hardware-driven via dedicated S3# and S5# inputs, enabling automatic regulator sequencing: VDDQ switching regulator active in S0/S1, standby LDO enabled in S3, and VTT disabled during sleep. NCH provides open-drain control of an external backfeed-blocking MOSFET, synchronized to state transitions without requiring 5V Dual routing to memory supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Topology | Synchronous buck PWM + integrated sink-source VTT LDO + standby VDDQ LDO |
| Switching Frequency | 250kHz fixed frequency - enables compact magnetics and predictable EMI profile |
| VDDQ Output Range | Adjustable down to 0.8V via external FB resistor divider - supports DDR/DDR2 core voltage specs |
| VTT Current Capability | ±3A periodic load (30% duty, 10ms period) - sufficient for dual-channel DDR termination |
| Reference Accuracy | 0.800V ±2% over temp - ensures tight VTT = VDDQ/2 tracking and stable memory interface timing |
| Regulation Tolerance | ±2% over line/load/temp for all outputs - meets JEDEC DDR voltage margin requirements |
| Thermal Shutdown | Triggers at +140°C junction; auto-recovery below +110°C - protects against sustained overload or poor heatsinking |
| Package | 28-lead 6×6mm QFN (JEDEC MO-220) - near-chip-scale footprint with exposed thermal pad for PCB heat dissipation |
Pinout & Package
ISL6532ACRZ-T is housed in a 28-lead, 6mm × 6mm QFN package compliant with JEDEC MO-220, featuring an exposed thermal pad for enhanced thermal performance. Pin numbering follows top-view orientation with Pin 1 at top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE (26) | Upper gate driver output | Drives control FET of VDDQ buck stage between GND and P12V - requires low-inductance layout to prevent shoot-through |
| LGATE (27) | Lower gate driver output | Drives synchronous rectifier FET - adaptive shoot-through protection monitors UGATE/LGATE voltages relative to GND |
| VDDQ (7,8,9) | VDDQ power node | Shared pins serve as VDDQ output in S3, and as VDDQ input/VTT reference source in S0/S1 - must be externally shorted |
| VTT (5,6) | VTT output | Delivers ±3A VTT termination voltage sourced from VDDQ/2 - disabled in S3 state |
| VTTSNS (10) | VTT feedback sense | Connects directly to VTT rail at point of regulation - enables accurate closed-loop VTT control independent of PCB trace IR drop |
| NCH (22) | Backfeed control output | Open-drain signal controlling external blocking MOSFET - pulled low during S3/S4/S5 to prevent VDDQ → input rail backfeed |
| PGOOD (21) | Power-good indicator | Open-drain output asserted high only when all three regulators (VDDQ, VTT, VAGP) are within ±2% spec in S0/S1 - critical for system boot sequencing |
| S3# (23), S5# (24) | ACPI sleep state inputs | Dedicated logic inputs accepting ATX SLP_S3#/SLP_S5# signals - enable hardware-controlled, glitch-free regulator state transitions |
Key Features
| Feature | Design Value |
|---|---|
| Triple-output ACPI power management | Integrates VDDQ buck, VTT sink-source, and AGP 1.5V LDO - eliminates need for discrete controllers in DDR memory subsystems |
| Glitch-free S0↔S3 transition | Internal state machine synchronizes VDDQ PWM disable, standby LDO enable, and VTT disable - prevents rail collapse or overshoot during sleep entry |
| VDDQ/2 reference with buffer | VREF_OUT provides low-impedance, buffered VDDQ/2 for VTT regulation and external use - reduces sensitivity to noise and loading effects |
| No external current-sense resistor | Overcurrent protection uses upper MOSFET rDS(ON) and OCSET pin - improves efficiency and lowers BOM cost vs. shunt-based sensing |
| Integrated soft-start per rail | Independent 8.2ms digital soft-start for VDDQ, VTT, and VAGP - prevents inrush current and ensures monotonic voltage ramp during cold start |
| Pb-free RoHS-compliant packaging | 28-lead QFN with 100% matte tin e3 termination - compatible with SnPb and Pb-free reflow profiles per IPC/JEDEC J-STD-020 |
Applications
| Desktop PC Memory Power | Graphics Card Memory Supply |
|---|---|
Use Scenario: Dual-channel DDR2 memory subsystem in ATX desktop motherboard with ACPI S3/S4/S5 sleep states. IC Role / Device Role / Timing Role: Primary power controller managing VDDQ, VTT, and AGP core voltage with hardware-accelerated state transitions. Use Value: Eliminates discrete sequencing logic and external VTT reference buffers - reduces component count and improves DDR timing margin via precise VDDQ/2 tracking. | Use Scenario: GPU memory power delivery on PCIe graphics card requiring low-noise, tightly regulated VDDQ and VTT rails. IC Role / Device Role / Timing Role: Central regulator IC providing synchronized VDDQ ramp-up and VTT enablement aligned with GPU reset and training sequences. Use Value: Fast 250kHz PWM response and ±2% regulation ensure stable memory interface under dynamic GPU workloads - critical for 3D rendering and compute applications. |
| ASIC Memory Interface Power | Embedded Industrial DDR System |
Use Scenario: High-speed ASIC with DDR2 interface in networking equipment, where memory power must comply with platform-wide ACPI policies. IC Role / Device Role / Timing Role: ACPI-compliant DDR power manager interfacing directly with chipset SLP_S3#/SLP_S5# signals and ATX 12V/5VSBY rails. Use Value: NCH-controlled backfeed blocking removes need for external 5V Dual routing - simplifies board layout and avoids cross-rail coupling in dense ASIC designs. | Use Scenario: Fanless industrial PC using DDR2 SO-DIMMs, operating across 0°C to +70°C ambient with strict thermal and reliability requirements. IC Role / Device Role / Timing Role: Robust memory power controller with thermal shutdown (+140°C) and ±2% regulation tolerance - ensures DDR stability under extended thermal stress. Use Value: Standby LDO delivers 650mA from 5VSBY in S3 - maintains memory retention without auxiliary power conversion stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR memory power controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6532AIRZ | Extended -40°C to +85°C temperature range; otherwise identical electrical and pinout specification | Required for industrial or extended-temperature deployments where commercial-grade 0°C to +70°C is insufficient | Select ISL6532AIRZ when operating ambient exceeds +70°C or falls below 0°C - same PCB layout and firmware integration |
| RT8120BGQW | Single-channel DDR3/DDR4 controller; lacks integrated VTT sink-source and AGP LDO; uses current-mode control | Targets newer DDR generations but requires external VTT buffering and separate AGP supply | Choose RT8120BGQW only for DDR3/DDR4 designs with simplified power tree - not a functional replacement for ISL6532ACRZ-T's triple-output ACPI architecture |
Compared with ISL6532AIRZ, the ISL6532ACRZ-T offers identical functionality at lower cost for commercial-temperature systems, while RT8120BGQW serves a different DDR generation and lacks the integrated VTT and AGP regulation needed for legacy DDR2 platforms.
Availability
ISL6532ACRZ-T is available at Aetrix Electronics and suitable for desktop motherboards, graphics cards, ASIC memory interfaces, and embedded DDR2 systems requiring stable component supply across full production lifecycles.
Supply support for ISL6532ACRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation acquired Intersil in 2017 and continues to support its high-performance analog and power management portfolio for computing and industrial applications.
The ISL6532ACRZ-T belongs to Intersil's legacy ACPI-compliant memory power controller family, designed specifically for cost-sensitive, high-reliability DDR/DDR2 memory subsystems in ATX-based PCs and graphics cards.
FAQ
What is the primary function of the ISL6532ACRZ-T in a DDR memory system?
The ISL6532ACRZ-T serves as a complete ACPI-compliant power controller for dual-channel DDR/DDR2 memory, generating three regulated voltages: VDDQ (via synchronous buck), VTT (via sink-source linear regulator referenced to VDDQ/2), and VAGP (1.5V via LDO). It manages seamless transitions between S0/S1 active and S3 sleep states using dedicated S3#/S5# inputs and integrated NCH backfeed control - all within a single 28-pin QFN package.
Does the ISL6532ACRZ-T support DDR3 or DDR4 memory standards?
No, the ISL6532ACRZ-T is specifically designed for DDR and DDR2 memory systems. Its output voltage range (adjustable down to 0.8V), VTT current capability (±3A), and ACPI state logic align with JEDEC DDR/DDR2 specifications. It does not support DDR3's 1.5V VDDQ requirement nor DDR4's 1.2V VDDQ and 0.6V VTT levels - those require newer controllers such as the RT8120BGQW or ISL6537.
How does the ISL6532ACRZ-T handle overcurrent protection on the VDDQ rail?
The ISL6532ACRZ-T implements MOSFET rDS(ON)-based overcurrent protection on the VDDQ buck stage using the OCSET pin. An internal 20µA current source develops a voltage across an external ROCSET resistor; when the voltage across the upper MOSFET exceeds this threshold, the device initiates hiccup-mode protection - disabling all regulators and executing three soft-start cycles before attempting recovery. This eliminates the need for a lossy current-sense resistor while maintaining fast fault response.
Can the ISL6532ACRZ-T operate with a 3.3V standby input instead of 5VSBY?
Yes, the ISL6532ACRZ-T supports both 5VSBY and 3.3VSBY inputs for the standby LDO that powers VDDQ in S3 state. However, the datasheet specifies higher output current capability (650mA vs. 550mA) when P5VSBY is tied to 5VSBY. For systems requiring >550mA VDDQ standby current, 5VSBY is mandatory; for lower-current S3 retention, 3.3VSBY is acceptable and electrically valid.
What is the role of the NCH pin on the ISL6532ACRZ-T, and how must it be connected?
The NCH pin is an open-drain output that controls an external backfeed-blocking MOSFET during sleep states. It must be pulled up to +12V via a ≥2kΩ resistor. During S3/S4/S5, NCH is actively driven low to disable the blocking FET and prevent reverse current flow from VDDQ to the input rail. If unused, NCH still requires the 12V pull-up - leaving it floating violates absolute maximum ratings and risks improper state transitions.
ISL6532ACRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-VQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Applications:
- Memory, DDR/DDR2 Regulator
- Current - Supply:
- 5.25mA
- Voltage - Supply:
- -
- Operating Temperature:
- 0°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-QFN (6x6)
ISL6532ACRZ-T FAQ
1.How can I place an order for ISL6532ACRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6532ACRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6532ACRZ-T reliable?
The price and inventory of ISL6532ACRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6532ACRZ-T is usually 5 days.
3.What payment methods are accepted for ISL6532ACRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6532ACRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6532ACRZ-T?
ISL6532ACRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6532ACRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6532ACRZ-T?
For technical support, including ISL6532ACRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6532ACRZ-T requirements.
6.How does Aetrix verify that ISL6532ACRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6532ACRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6532ACRZ-T meets industry standards.
7.What is the process for return or replacement of ISL6532ACRZ-T?
All ISL6532ACRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6532ACRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6532ACRZ-T part is unused and in its original packaging.
Return procedure for ISL6532ACRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISL6532ACRZ-T Tags

-
TPS2511DGNR
Texas Instruments

-
UTC2000/MG
Microchip Technology

-
TUSB320HAIRWBR
Texas Instruments

-
TPS61252DSGR
Texas Instruments

-
PI5USB30216CXUAEX
Diodes Incorporated
-
SN6501DBVR
Texas Instruments

-
CYPD3177-24LQXQT
Infineon Technologies
-
SN6501QDBVRQ1
Texas Instruments

-
STUSB1600AQTR
STMicroelectronics

-
SN6505BDBVR
Texas Instruments
-
SN6501DBVT
Texas Instruments

-
TPS65150PWPR
Texas Instruments
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

