Renesas ISL6532CCRZ-T
- Part No.:
- ISL6532CCRZ-T
- Manufacturer:
- Renesas
- Category:
- Power Management - Specialized
- Package:
- 28-VQFN Exposed Pad
- Datasheet:
-
ISL6532CCRZ-T.pdf
- Description:
- IC REG/CTRLR ACPI DUAL DDR 28QFN
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
ISL6532CCRZ-T from Renesas (formerly Intersil) is an ACPI-compliant dual-channel DDR memory power controller integrating a 250kHz synchronous buck PWM controller, a ±2% accurate VDDQ/2 sink-source linear regulator for VTT, and an LDO controller for AGP core voltage. It delivers up to 3A VTT current, supports 0.8V–2.5V adjustable VDDQ, and enables glitch-free S0/S3 state transitions in ATX-based systems.
For engineers reviewing the ISL6532CCRZ-T datasheet, ISL6532CCRZ-T pinout, ISL6532CCRZ-T application, or ISL6532CCRZ-T equivalent, key selection criteria include its triple-regulator architecture (VDDQ PWM + VTT linear + AGP LDO), integrated NCH backfeed control, 250kHz fixed-frequency operation, ±2% regulation tolerance over temperature, and QFN-28 6×6 mm package with exposed thermal pad.
Technical Context
The ISL6532CCRZ-T implements voltage-mode PWM control with fast transient response for the VDDQ buck stage, using a precision 0.8V internal reference and external resistor divider feedback (FB/COMP). Its VTT regulator operates as a fully integrated sink-source linear device with buffered VREF_OUT tracking VDDQ/2, eliminating need for negative supply.
ACPI state management is hardware-driven via dedicated S3# and S5# inputs, coordinating seamless switching between PWM (S0/S1) and standby LDO (S3) modes for VDDQ, while independently enabling/disabling VTT and AGP LDO per state. Thermal shutdown triggers at 140°C, and overcurrent protection uses rDS(ON)-based sensing on the upper MOSFET via OCSET.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| PWM Frequency | 250 kHz fixed frequency - ensures predictable EMI profile and simplifies filter design for DDR memory rail. |
| VDDQ Regulation Tolerance | ±2% over line/load/temperature - meets DDR/DDR2 VDDQ specification stability requirements across operating conditions. |
| VTT Output Current | ±3 A peak - supports termination current demands of up to 4 DIMMs in dual-channel DDR systems. |
| VREF Accuracy | 0.800 V ±0% - precision internal reference enables accurate VDDQ setting down to 0.8V with external resistor divider. |
| Operating Temperature | 0°C to +70°C ambient - validated for commercial PC and graphics card environments. |
| Package | 28-pin QFN 6×6 mm with exposed thermal pad - improves thermal dissipation and PCB space efficiency vs. SOIC. |
| Thermal Shutdown | 140°C junction limit - protects IC during overload or poor heatsinking without requiring external monitoring. |
Pinout & Package
ISL6532CCRZ-T is housed in a JEDEC MO-220 compliant 28-lead QFN package (6 mm × 6 mm, 0.5 mm pitch) with an exposed thermal pad. The package supports Pb-free reflow per IPC/JEDEC J-STD-020B and requires low-inductance grounding of the paddle to system ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE (26) | Upper gate driver output | Drives control MOSFET gate between GND and P12V; supports adaptive shoot-through protection. |
| LGATE (27) | Lower gate driver output | Drives synchronous rectifier MOSFET gate; complements UGATE with dead-time control. |
| VDDQ (7,8,9) | VDDQ power node | Shared pins for VDDQ output (S0/S1) or input to VTT/VREF (S0/S1), and standby LDO output (S3). |
| VTT (5,6) | VTT termination output | Delivers ±3 A sink/source current to DDR termination rail; disabled in S3 state. |
| VTTSNS (10) | VTT feedback sense | Connects directly to VTT rail at point of load for accurate closed-loop regulation. |
| NCH (22) | Backfeed blocking control | Open-drain output controlling external MOSFET to prevent reverse current from VDDQ to input rail during sleep. |
| PGOOD (21) | Power-good status | Open-drain logic signal asserted high only when all three regulators (VDDQ, VTT, AGP) are within spec in S0/S1. |
| S3# (23), S5# (24) | ACPI sleep state inputs | Dedicated TTL-compatible inputs that directly control regulator enable/disable sequencing per ACPI specification. |
Key Features
| Feature | Design Value |
|---|---|
| Triple-output regulation | Simultaneous VDDQ (PWM), VTT (sink-source linear), and AGP core (LDO) outputs eliminate need for multiple controllers in DDR memory subsystems. |
| Glitch-free ACPI state transitions | Hardware-synchronized switching between PWM and standby LDO modes prevents voltage droop or overshoot during S0↔S3 transitions. |
| Integrated VREF buffer | VREF_OUT provides low-impedance, buffered VDDQ/2 reference for system-level VREF distribution without external op-amp. |
| rDS(ON)-based OCP | Eliminates current-sense resistor in high-side path, reducing BOM cost and PCB area while maintaining accurate overcurrent trip at IPEAK = (IOCSET × ROCSET)/rDS(ON). |
| QFN thermal performance | θJA = 32°C/W enables reliable operation at full load without heatsink in compact graphics or motherboard layouts. |
Applications
| Desktop DDR Memory Power | Graphics Card Memory Supply |
|---|---|
Use Scenario: Dual-channel DDR2 memory subsystem on ATX desktop motherboard with ACPI S3/S4/S5 support. IC Role / Device Role / Timing Role: Primary power controller managing VDDQ, VTT, and AGP core rails with hardware-coordinated state transitions. Use Value: Enables single-chip compliance with Intel DDR2 memory power specifications while reducing layout complexity and component count. | Use Scenario: GPU memory interface on discrete graphics card requiring stable 1.8V/2.5V VDDQ and matched VTT termination. IC Role / Device Role / Timing Role: Regulator/controller delivering synchronized VDDQ ramp and VTT tracking during GPU wake/sleep cycles. Use Value: Maintains signal integrity on high-speed GDDR interfaces by ensuring VTT remains within 1% of VDDQ/2 during active and transition states. |
| ASIC Memory Interface Power | Embedded Processor DDR Supply |
Use Scenario: ASIC-based storage controller with dual DDR2 channels and strict power sequencing requirements. IC Role / Device Role / Timing Role: Centralized power manager generating all memory-related voltages with programmable soft-start timing. Use Value: Simplifies ASIC power domain design by integrating three independent regulated outputs with shared fault reporting (PGOOD). | Use Scenario: Industrial embedded system using DDR2 memory with extended temperature operation and low-power S3 retention. IC Role / Device Role / Timing Role: Low-quiescent-current controller supplying VDDQ from 5VSBY in S3 and switching to 12V input in S0. Use Value: Delivers 650 mA standby VDDQ current from 5VSBY rail, enabling memory data retention without main power. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR memory power controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6537CRZ-T | Higher VDDQ current capability (up to 25 A), integrated MOSFET drivers optimized for multiphase designs, supports DDR3 timing. | Targeted at high-end desktop and server platforms with >4 DIMMs or DDR3 memory; not pin-compatible. | Select ISL6537CRZ-T only when scaling beyond dual-channel DDR2 or requiring multiphase VDDQ architecture. |
| TPS51116PWR | TI part with integrated 5-V-to-VDDQ buck converter, no standalone VTT sink-source regulator, uses external VTT reference. | Designed for cost-sensitive notebooks; lacks integrated VTT regulation and NCH backfeed control. | Choose TPS51116PWR for single-rail notebook DDR2 designs where VTT is handled separately, but not for full-featured desktop ACPI compliance. |
Compared with ISL6532CCRZ-T, ISL6537CRZ-T offers higher current scalability and DDR3 readiness but requires board redesign, while TPS51116PWR reduces component count for VDDQ-only applications but sacrifices integrated VTT control and ACPI state coordination.
Availability
ISL6532CCRZ-T is available at Aetrix Electronics and suitable for desktop motherboards, graphics cards, ASIC memory interfaces, and embedded DDR2 systems requiring stable component supply with long-term industrial availability.
Supply support for ISL6532CCRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics acquired Intersil in 2017 and maintains legacy power management product lines including the ISL65xx series for memory power solutions.
The ISL6532C product line was specifically designed for ACPI-compliant DDR/DDR2 memory power systems in PCs and graphics cards, emphasizing integrated state control, tight regulation, and thermal robustness.
FAQ
What is the primary function of the ISL6532CCRZ-T in a DDR memory system?
The ISL6532CCRZ-T serves as a complete ACPI-compliant power controller for dual-channel DDR/DDR2 memory, generating three regulated voltages: VDDQ via synchronous buck PWM, VTT via integrated sink-source linear regulator, and AGP core voltage via LDO controller. It manages seamless transitions between S0 (active) and S3 (sleep) states while maintaining tight ±2% regulation on all outputs across temperature and load.
Does the ISL6532CCRZ-T support both 5V and 3.3V standby input rails for VDDQ standby operation?
Yes, the ISL6532CCRZ-T supports VDDQ standby operation from either 5VSBY or 3.3VSBY via the P5VSBY pin. When powered from 5VSBY, the integrated standby LDO delivers up to 650 mA; from 3.3VSBY, it delivers up to 550 mA. The datasheet recommends using 5VSBY due to higher current capability and better regulation stability.
How does the ISL6532CCRZ-T implement overcurrent protection for the VDDQ switching regulator?
The ISL6532CCRZ-T uses rDS(ON)-based overcurrent protection: an internal 20 µA current source (IOCSET) flows through an external resistor (ROCSET) to set a voltage threshold. When the voltage drop across the upper MOSFET exceeds this threshold - indicating peak inductor current IPEAK = (IOCSET × ROCSET)/rDS(ON) - the controller initiates hiccup-mode soft-start recovery. This eliminates the need for a lossy current-sense resistor.
What is the role of the NCH pin on the ISL6532CCRZ-T, and how must it be connected?
The NCH pin on the ISL6532CCRZ-T is an open-drain output that controls an external backfeed-blocking MOSFET to prevent reverse current flow from VDDQ to the input rail during S3/S4/S5 sleep states. It must be pulled up to 12V via a ≥2 kΩ resistor. If unused, it still requires this pull-up; adding a capacitor to NCH enables delayed PWM startup in 5V-dual-input configurations.
Can the ISL6532CCRZ-T be used in DDR3 memory systems?
No, the ISL6532CCRZ-T is specifically designed for DDR and DDR2 memory systems. Its VDDQ output range (down to 0.8V), VTT regulation architecture, and ACPI state timing align with DDR/DDR2 specifications. DDR3 requires different VDDQ levels (1.5V), tighter VTT accuracy (±1%), and updated timing - addressed by later-generation controllers such as the ISL6537C or TPS51220.
ISL6532CCRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-VQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Applications:
- Memory, DDR/DDR2 Regulator
- Current - Supply:
- 5.25mA
- Voltage - Supply:
- -
- Operating Temperature:
- 0°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-QFN (6x6)
ISL6532CCRZ-T FAQ
1.How can I place an order for ISL6532CCRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6532CCRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6532CCRZ-T reliable?
The price and inventory of ISL6532CCRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6532CCRZ-T is usually 5 days.
3.What payment methods are accepted for ISL6532CCRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6532CCRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6532CCRZ-T?
ISL6532CCRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6532CCRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6532CCRZ-T?
For technical support, including ISL6532CCRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6532CCRZ-T requirements.
6.How does Aetrix verify that ISL6532CCRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6532CCRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6532CCRZ-T meets industry standards.
7.What is the process for return or replacement of ISL6532CCRZ-T?
All ISL6532CCRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6532CCRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6532CCRZ-T part is unused and in its original packaging.
Return procedure for ISL6532CCRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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