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Renesas ISL6532CR
- Part No.:
- ISL6532CR
- Manufacturer:
- Renesas
- Category:
- Power Management - Specialized
- Package:
- 20-VQFN Exposed Pad
- Datasheet:
-
ISL6532CR.pdf
- Description:
- IC REG/CTRLR ACPI DUAL DDR 20QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,540
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Product details
Overview
ISL6532CR from Intersil is an ACPI-compliant dual-channel DDR/DDR2 memory power controller integrating a synchronous buck PWM controller (VDDQ), a 3A sink-source VTT linear regulator, and a buffered VDDQ/2 reference (VREF_OUT). It delivers ±2% static regulation over line/load/temperature, supports 0.8V–2.5V VDDQ output via external resistor divider, and enables glitch-free S0↔S3 state transitions in ATX-powered systems. Used in dual-channel DDR memory subsystems for desktop PCs and graphics cards.
For engineers reviewing the ISL6532CR datasheet, ISL6532CR pinout, ISL6532CR application, or ISL6532CR equivalent, key selection considerations include its 250kHz fixed-frequency voltage-mode PWM control, integrated NCH backfeed blocking logic, dual-rail UV/OV protection with 85%/115% thresholds, thermal shutdown at 140°C, and QFN-20 package compatibility with DDR2 termination requirements.
Technical Context
The ISL6532CR implements a single-loop voltage-mode PWM architecture with internal 0.8V precision reference, 15MHz gain-bandwidth error amplifier, and adaptive shoot-through protection monitoring UGATE/LGATE voltages. Its state machine directly interprets SLP_S3# and SLP_S5# signals to coordinate seamless switching between PWM-driven VDDQ (S0/S1) and standby LDO VDDQ (S3), while disabling VTT during sleep.
It integrates three regulated outputs: VDDQ (buck, up to 3A), VTT (linear sink-source, ±3A), and VREF_OUT (buffered VDDQ/2). The VTT regulator uses VTTSNS feedback and internal RU/RL = 2.5kΩ dividers; soft-start timing is controlled by CSS on VREF_IN, with 6.5–9.5ms intervals for both VDDQ and error amp reset.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| PWM Frequency | 250 kHz ±12% - Enables compact magnetics and predictable EMI profile for DDR memory rail filtering. |
| VDDQ Regulation Accuracy | ±2% over line/load/temperature - Ensures DDR2 VDDQ compliance across full operating range without recalibration. |
| VTT Output Current | ±3 A peak - Supports high-speed DDR2 termination loads with periodic 30% duty cycle per AN1055 test conditions. |
| Reference Voltage | 0.800 V ±0% - Precision internal reference sets minimum programmable VDDQ and anchors VTT/VREF tracking. |
| Thermal Shutdown Threshold | 140 °C - Protects IC during sustained overload or poor PCB thermal design; recovery at 110 °C hysteresis. |
| UV/OV Protection Thresholds | VDDQ: 85%/115% of target; VTT: same - Triggers hiccup-mode restart on undervoltage or immediate shutdown on overvoltage. |
| Operating Temperature | 0 °C to 70 °C ambient - Validated for commercial-grade ATX motherboard and GPU board environments. |
Pinout & Package
ISL6532CR is housed in a 20-lead 6×6 mm QFN package (JEDEC MO-220 compliant) with exposed thermal pad (Pin 21). The package enables high-density layout and efficient heat dissipation via direct ground-plane connection through ≥4 vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 5VSBY (1) | Bias supply input | Provides low-power bias during S3/S4/S5; draws <800 µA in S5, enabling ATX standby operation. |
| P12V (18) | High-side gate drive supply | Supplies UGATE/LGATE drivers and VTT regulator; only active in S0/S1/S2 states. |
| UGATE (20) / LGATE (19) | N-channel MOSFET gate drivers | Drive external upper/lower FETs with ±0.8A peak current; incorporate adaptive shoot-through protection. |
| VDDQ (5,6) | VDDQ rail interface | Input/output node: supplies VTT reference and VDDQ LDO output during S3; receives buck output in S0/S1. |
| VTT (3,4) | VTT termination output | Sink-source linear regulator output; disabled in all sleep states; requires VTTSNS feedback at load point. |
| VREF_OUT (9) | Buffered VDDQ/2 reference | Provides low-impedance, 2mA-sourced VDDQ/2 for system-level termination reference; requires 0.1µF bypass. |
| NCH (15) | Backfeed blocking control | Open-drain output controlling external MOSFET; trips at 9.0–10V to prevent VDDQ→P12V reverse current. |
| PGOOD (14) | System power-good indicator | Open-drain signal asserted high only when both VDDQ and VTT are in regulation during S0/S1/S2. |
| S3# (16) / S5# (17) | ACPI sleep state inputs | Direct TTL-compatible interfaces to chipset SLP_S3#/SLP_S5# signals; define regulator enable/disable sequencing. |
Key Features
| Feature | Design Value |
|---|---|
| Glitch-free ACPI state transitions | Internal logic synchronizes VDDQ LDO activation, VTT disable, and NCH control to eliminate rail collapse or overshoot during S0↔S3. |
| Integrated VDDQ/2 reference buffer | VREF_OUT provides stable, low-noise, 2mA-sourced VDDQ/2 without external op-amp or divider network. |
| Single-resistor VDDQ programming | VDDQ output set from 0.8V to 2.5V using FB pin divider; R1 ≤5kΩ recommended for optimal compensation stability. |
| Adaptive shoot-through protection | Monitors UGATE/LGATE voltage vs. 0.8V threshold to prevent simultaneous FET conduction-no external timing components needed. |
| Controlled soft-start with CSS timing | VREF_IN capacitor sets VTT ramp profile; ensures VTT capacitor bank charges without exceeding VTT LDO current limit. |
Applications
| Desktop PC DDR2 Memory Power | Graphics Card GPU + Memory Supply |
|---|---|
Use Scenario: Dual-channel DDR2 memory subsystem on ATX motherboard requiring ACPI S3 suspend-to-RAM support. IC Role / Device Role / Timing Role: Primary power controller managing VDDQ buck regulation, VTT termination, and VREF generation with synchronized S3 entry/exit. Use Value: Eliminates need for discrete VTT LDO and separate VREF buffer; reduces BOM count by ≥3 components while guaranteeing ±2% VDDQ accuracy. |
Use Scenario: High-performance GPU board with dedicated DDR2 memory interface and strict power sequencing requirements. IC Role / Device Role / Timing Role: Regulator controller coordinating GPU core voltage, memory VDDQ, and VTT termination under dynamic load and thermal stress. Use Value: Enables fast S0→S3 transition (<10 µs VDDQ switchover) and prevents backfeed into 12V rail via NCH-controlled MOSFET, improving system reliability. |
| ASIC Memory Interface Power | Embedded Processor DDR Memory Supply |
Use Scenario: ASIC-based storage controller with DDR2 memory interface requiring low-quiescent-current standby mode. IC Role / Device Role / Timing Role: ACPI-compliant power manager delivering 650mA VDDQ standby current from 5VSBY during S3 state. Use Value: Reduces S3 power consumption vs. discrete solutions by integrating low-ICC bias management and optimized LDO architecture. |
Use Scenario: Industrial embedded processor board with DDR2 memory and requirement for robust thermal protection. IC Role / Device Role / Timing Role: Memory power controller providing VDDQ/VTT with 140°C thermal shutdown and automatic hiccup-mode fault recovery. Use Value: Prevents permanent damage during extended overloads; maintains system integrity without external thermal sensors or firmware intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR memory power controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6537CR | Higher VDDQ current capability (up to 6A), supports DDR3 VDDQ=1.5V, adds PGOOD delay adjustment pin. | Targeted at DDR3 systems with higher memory bandwidth; not pin-compatible due to added pin and different FB/COMP configuration. | Select ISL6537CR only when upgrading to DDR3 or requiring >3A VDDQ; ISL6532CR remains optimal for DDR2 cost-sensitive designs. |
| RT8120AGQW | Single-chip DDR3/DDR4 solution with integrated MOSFET drivers, 300kHz switching, no standalone VTT LDO - uses external VTT FETs. | Requires external VTT MOSFETs and compensation; lacks integrated VREF buffer and NCH backfeed logic. | Choose RT8120AGQW for DDR3/DDR4 designs where board space allows external FETs and system-level VREF buffering is acceptable. |
Compared with ISL6532CR, ISL6537CR offers higher current and DDR3 support but requires PCB redesign, while RT8120AGQW reduces component count for DDR3 but increases layout complexity and removes integrated VREF/NCH functionality critical for legacy DDR2 ATX compliance.
Availability
ISL6532CR is available at Aetrix Electronics and suitable for desktop PC motherboards, graphics card memory power systems, and embedded DDR2 memory interfaces requiring stable component supply, long-term lifecycle support, and commercial-temperature grade performance.
Supply support for ISL6532CR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil (now part of Renesas Electronics) is a semiconductor company specializing in high-performance analog and power management ICs for computing, industrial, and communications markets.
The ISL6532CR belongs to Intersil's ACPI-compliant memory power controller product line, designed specifically to simplify DDR/DDR2 memory rail implementation in ATX-based systems with strict ACPI sleep-state timing and regulation accuracy requirements.
FAQ
What is the primary function of the ISL6532CR in a DDR2 memory system?
The ISL6532CR serves as the complete ACPI-compliant power controller for dual-channel DDR2 memory, generating and regulating three critical rails: VDDQ (via synchronous buck), VTT (via integrated sink-source linear regulator), and VREF_OUT (buffered VDDQ/2). It manages seamless transitions between S0 (active) and S3 (suspend-to-RAM) states while maintaining ±2% regulation accuracy across temperature and load. The ISL6532CR eliminates the need for multiple discrete regulators and reference buffers in DDR2 memory power architectures.
Does the ISL6532CR support DDR3 memory systems?
No, the ISL6532CR is specifically designed for DDR and DDR2 memory systems with VDDQ ranges down to 0.8V and VTT = VDDQ/2. It does not meet DDR3 VDDQ = 1.5V ±0.075V or DDR3L VDDQ = 1.35V specifications. For DDR3, Intersil recommends the ISL6537CR, which supports higher VDDQ currents and tighter DDR3 tolerances. The ISL6532CR's internal reference, protection thresholds, and state logic are calibrated for DDR2 timing and voltage requirements.
How does the NCH pin function in the ISL6532CR?
The NCH pin on the ISL6532CR is an open-drain output that controls an external N-channel MOSFET used to block reverse current (backfeed) from the VDDQ rail into the P12V input during S3/S4/S5 sleep states. It activates when VNCH reaches 9.0–10V, ensuring the blocking FET turns off before the VDDQ regulator shuts down. If unused, NCH must still be pulled up to 12V via ≥2kΩ resistor. This feature is essential for ATX compliance and prevents power loss or instability during sleep transitions.
What is the role of the CSS capacitor on the VREF_IN pin of the ISL6532CR?
The CSS capacitor on VREF_IN sets the soft-start time constant for the VTT rail during S3→S0 transitions. It works with the internal RU||RL = 5kΩ divider to control the ramp rate of the VTT reference, preventing inrush current from exceeding the VTT LDO's ±3A limit. Per AN1055, CSS must satisfy CSS > (CVTT × VDDQ) / (2A × RU||RL); typical values range from 10nF to 100nF depending on VTT bulk capacitance. This capacitor ensures controlled VTT voltage rise without triggering current-limit protection.
Can the ISL6532CR operate with a 3.3V standby input instead of 5V?
Yes, the ISL6532CR supports 3.3V standby input via the P5VSBY pin for VDDQ standby LDO operation in S3 state. When P5VSBY = 3.3V, the standby LDO delivers up to 550mA (vs. 650mA at 5V). However, the 5VSBY pin - which powers the IC's bias circuitry - must remain at 5V ±10% per datasheet absolute ratings; it cannot be supplied from 3.3V. The P5VSBY pin is solely for standby VDDQ sourcing and does not affect IC core functionality or regulation accuracy in S0/S1.
ISL6532CR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 20-VQFN Exposed Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Applications:
- Memory, DDR/DDR2 Regulator
- Current - Supply:
- 5.25mA
- Voltage - Supply:
- -
- Operating Temperature:
- 0°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 20-QFN (6x6)
ISL6532CR FAQ
1.How can I place an order for ISL6532CR through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6532CR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6532CR reliable?
The price and inventory of ISL6532CR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6532CR is usually 5 days.
3.What payment methods are accepted for ISL6532CR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6532CR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6532CR?
ISL6532CR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6532CR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6532CR?
For technical support, including ISL6532CR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6532CR requirements.
6.How does Aetrix verify that ISL6532CR is sourced from the original manufacturer or authorized distributors?
All ISL6532CR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6532CR meets industry standards.
7.What is the process for return or replacement of ISL6532CR?
All ISL6532CR units undergo pre-shipment inspection (PSI). If there is an issue with ISL6532CR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6532CR part is unused and in its original packaging.
Return procedure for ISL6532CR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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