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Renesas ISL6612ACBZ

Part No.:
ISL6612ACBZ
Manufacturer:
Renesas
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixISL6612ACBZ.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:328

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Product details

Overview

ISL6612ACBZ from Renesas Electronics is a dual N-channel MOSFET driver for synchronous buck converters, delivering 3A sink/2A source upper gate drive and 3A sink/2A source lower gate drive with adaptive zero shoot-through protection, 12V upper gate drive (fixed to VCC), and 5–12V adjustable lower gate drive (via PVCC). It operates up to 2MHz switching frequency and integrates pre-POR overvoltage protection for microprocessor core voltage regulation.

For engineers reviewing the ISL6612ACBZ datasheet, ISL6612ACBZ pinout, ISL6612ACBZ application, or ISL6612ACBZ equivalent, this device is selected for high-efficiency VRM/VRD designs requiring precise deadtime control, three-state PWM shutdown, bootstrap capacitor overcharge prevention, and robust startup protection in Intel®/AMD® CPU power delivery systems.

Technical Context

The ISL6612ACBZ implements an adaptive shoot-through protection circuit that monitors PHASE voltage and body-diode conduction to dynamically adjust deadtime-detecting -0.2V/+0.8V trip points and auto-zeroing rDS(ON) offset effects. Its Pre-POR OVP activates before VCC reaches 9.8V, connecting PHASE to LGATE to clamp output voltage if the high-side MOSFET shorts at startup.

It features a three-state PWM input with 1.8–2.4V shutdown window and >400mV hysteresis, enabling controlled output stage shutdown without external diodes. The internal 36V bootstrap Schottky diode eliminates external discrete diodes while preventing boot capacitor overcharging during PHASE node negative swing.

Key Specifications

Parameter Value and Actual Design Meaning
VCC Supply Voltage 12V ±10% - powers bias circuitry and sets fixed upper gate drive level
PVCC Range 5V to 12V ±10% - independently sets lower gate drive voltage for loss optimization
Max Switching Frequency 2MHz - supports high-density, high-efficiency VRM designs with minimal output ripple
UGATE/LGATE Sink Current 2A/3A - enables fast turn-off of large gate-charge MOSFETs (e.g., IRLR7821) at high frequencies
Propagation Delay (tPD) 10ns typical - ensures tight timing alignment between PWM edge and gate transitions
Pre-POR OVP Activation Active below 9.8V VCC - protects microprocessor by clamping output via LGATE–PHASE connection during startup faults
Three-State PWM Window 1.80–2.40V - provides noise-immune, hysteresis-enabled shutdown without false triggering

Pinout & Package

ISL6612ACBZ uses an 8-lead SOIC package (RoHS-compliant, M8.15 drawing) with exposed pad not present (unlike DFN/EPSOIC variants); thermal performance relies on PCB copper area under the body. Pin 1 is UGATE; pins 3 and 8 are no-connect (N/C).

Pin/Terminal Circuit Role Design Meaning
1 (UGATE) Upper gate drive output Drives high-side N-MOSFET gate; fixed 12V swing referenced to BOOT
2 (BOOT) Floating bootstrap supply Connects to bootstrap capacitor; supplies charge for high-side gate turn-on
3, 8 (N/C) No connection Unbonded pins; must remain unconnected per datasheet
4 (PWM) Three-state control input Accepts controller PWM signal; enters shutdown state when held 1.8–2.4V
5 (GND) Bias and reference ground Common return for VCC, PVCC, and all internal logic; must tie to low-impedance ground plane
6 (LGATE) Lower gate drive output Drives low-side N-MOSFET gate; swing range set by PVCC (5–12V)
7 (VCC) Bias supply input Provides 12V ±10% to internal logic and upper driver; requires local 10µF ceramic decoupling
9 (PVCC) Lower gate drive supply Supplies power only to LGATE; independent of VCC to optimize conduction vs. gate loss trade-off

Key Features

Feature Design Value
Adaptive zero shoot-through protection Dynamically adjusts deadtime using PHASE voltage detection and rDS(ON) auto-zeroing to minimize body-diode conduction loss without risk of shoot-through
Pre-POR overvoltage protection Activates before VCC reaches POR threshold (9.8V), connecting PHASE to LGATE to limit output voltage if high-side MOSFET fails short during startup
Three-state PWM input with hysteresis Enables clean output-stage shutdown by pulling both gates low when PWM remains 1.8–2.4V for ≥245ns, eliminating need for external reverse-protection Schottky diodes
Integrated 36V bootstrap Schottky diode Eliminates external bootstrap diode; includes overcharge prevention to reduce stress on BOOT–PHASE pins during large PHASE node negative swings
Adjustable lower gate drive voltage (5–12V) Allows independent optimization of LGATE voltage to balance gate charge loss (lower V) vs. conduction loss (higher V) for specific MOSFET selection

Applications

Intel® Core™ VRM AMD® Ryzen™ VRD

Use Scenario: Core voltage regulation for desktop/server CPUs requiring <1% output tolerance and dynamic load steps up to 200A/µs.

IC Role / Device Role / Timing Role: Dual gate driver synchronizing upper/lower N-MOSFETs in multiphase buck stages controlled by ISL65xx PWM controllers.

Use Value: Adaptive deadtime minimizes freewheeling loss during light loads; Pre-POR OVP prevents catastrophic core damage during cold-start MOSFET failure.

Use Scenario: High-current, high-frequency point-of-load regulation for AMD Zen-based processors in thin-and-light notebooks.

IC Role / Device Role / Timing Role: Gate driver in 3+1 phase VRD topology, interfacing with HIP63xx controllers and handling 500kHz–2MHz switching.

Use Value: Three-state PWM shutdown enables coordinated rail sequencing; adjustable PVCC allows tuning LGATE for low-QG GaN FETs without sacrificing drive strength.

High-Efficiency Server VRM Industrial DC/DC Core Regulator

Use Scenario: 12V-input, 0.8–1.8V-output VRM for AI accelerators with strict thermal limits and >90% efficiency targets.

IC Role / Device Role / Timing Role: Upper/lower gate driver in interleaved multiphase design, leveraging fast 10ns propagation delays for precise phase alignment.

Use Value: 3A LGATE sink current supports rapid turn-off of high-conductance MOSFETs; internal bootstrap diode reduces BOM count and layout complexity.

Use Scenario: Reliable core supply for industrial FPGA or DSP where extended temperature operation (-40°C to +85°C) and startup fault immunity are mandatory.

IC Role / Device Role / Timing Role: Synchronous rectifier driver in isolated or non-isolated buck converter, paired with ISL65xx controllers and discrete N-MOSFETs.

Use Value: VCC undervoltage lockout (7.6V falling threshold) prevents erratic operation during brownouts; SOIC package enables standard reflow assembly and field repairability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISL6612ACRZ 10-lead 3×3mm DFN package with exposed thermal pad; same electrical specs but superior θJA = 48°C/W vs. SOIC's 100°C/W Required for space-constrained, high-power-density designs needing enhanced thermal dissipation Select ISL6612ACRZ when board real estate and thermal headroom are critical; ISL6612ACBZ remains optimal for legacy SOIC layouts and ease of rework.
ISL6612AIBZ Same SOIC package but rated for -40°C to +85°C industrial temp range (vs. ISL6612ACBZ's 0°C to +85°C) Necessary for outdoor, automotive under-hood, or wide-temperature industrial deployments Choose ISL6612AIBZ for full industrial temperature compliance; ISL6612ACBZ suits commercial-grade computing applications with controlled ambient.

Compared with ISL6612ACRZ and ISL6612AIBZ, the ISL6612ACBZ offers cost-effective commercial-temperature SOIC compatibility, simplified thermal management for moderate-power VRMs, and direct drop-in replacement in existing ISL6601-family designs-making it ideal for volume production of mainstream CPU power solutions.

Availability

ISL6612ACBZ is available at Aetrix Electronics and suitable for Intel® Core™ VRM, AMD® Ryzen™ VRD, and high-efficiency server VRM applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for ISL6612ACBZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and interface ICs for automotive, industrial, and computing markets.

The ISL6612A product line was designed specifically for high-frequency synchronous buck gate driving in microprocessor core voltage regulators, emphasizing adaptive deadtime control, startup fault protection, and multi-phase scalability.

FAQ

What is the maximum allowable switching frequency for ISL6612ACBZ?

The ISL6612ACBZ supports up to 2MHz switching frequency, verified by its 10ns typical propagation delay, 26ns UGATE rise time, and 12ns LGATE fall time under 3nF capacitive load. This enables high-density VRM designs with reduced output filter size while maintaining stability and efficiency across the full operating temperature range.

Does ISL6612ACBZ support independent upper and lower gate drive voltages?

Yes, the ISL6612ACBZ fixes the upper gate drive voltage to VCC (12V ±10%), while the lower gate drive voltage is independently set by PVCC, which accepts 5V to 12V ±10%. This allows system designers to optimize LGATE voltage for specific MOSFETs-reducing gate charge loss at lower voltages or minimizing RDS(ON) conduction loss at higher voltages-without affecting upper-side timing.

How does the Pre-POR overvoltage protection function in ISL6612ACBZ?

Before VCC rises above its 9.8V typical POR threshold, ISL6612ACBZ activates Pre-POR OVP: UGATE is held low, and LGATE is connected to the PHASE node. If the high-side MOSFET shorts during startup, this clamps the output voltage to the low-side MOSFET's VGS(th), protecting the microprocessor. Once VCC exceeds 9.8V, normal PWM-controlled operation resumes.

Can ISL6612ACBZ replace HIP6601-family drivers in existing designs?

Yes, ISL6612ACBZ is explicitly pin-to-pin compatible with the HIP6601 SOIC family per its datasheet. It retains identical pinout (UGATE, BOOT, PWM, GND, LGATE, VCC, PVCC, PHASE), timing behavior, and functional features-including three-state PWM and adaptive shoot-through-enabling drop-in replacement without PCB or firmware changes.

What thermal considerations apply to ISL6612ACBZ in SOIC package?

The ISL6612ACBZ in 8-lead SOIC has θJA = 100°C/W (measured on standard test board). To maintain junction temperature ≤125°C, keep ambient ≤70°C and ensure ≥1 cm² copper pour under the IC. Unlike DFN variants, it lacks an exposed thermal pad-so thermal vias and ground-plane coupling are essential for >1W continuous dissipation.

ISL6612ACBZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
10.8V ~ 13.2V
Logic Voltage - VIL, VIH:
-
Current - Peak Output (Source, Sink):
1.25A, 2A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
36 V
Rise / Fall Time (Typ):
26ns, 18ns
Operating Temperature:
0°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

ISL6612ACBZ FAQ

1.How can I place an order for ISL6612ACBZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ISL6612ACBZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISL6612ACBZ reliable?

The price and inventory of ISL6612ACBZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6612ACBZ is usually 5 days.

3.What payment methods are accepted for ISL6612ACBZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6612ACBZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISL6612ACBZ?

ISL6612ACBZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISL6612ACBZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISL6612ACBZ?

For technical support, including ISL6612ACBZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6612ACBZ requirements.

6.How does Aetrix verify that ISL6612ACBZ is sourced from the original manufacturer or authorized distributors?

All ISL6612ACBZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6612ACBZ meets industry standards.

7.What is the process for return or replacement of ISL6612ACBZ?

All ISL6612ACBZ units undergo pre-shipment inspection (PSI). If there is an issue with ISL6612ACBZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISL6612ACBZ part is unused and in its original packaging.

Return procedure for ISL6612ACBZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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