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Renesas ISL6613AEIBZ-T
- Part No.:
- ISL6613AEIBZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Datasheet:
-
ISL6613AEIBZ-T.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,458
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Product details
Overview
ISL6613AEIBZ-T from Renesas Electronics is a dual-channel synchronous buck MOSFET driver for high-frequency core voltage regulation, driving both upper and lower N-Channel MOSFETs with independently adjustable 5V–12V gate drive rails, 3A sink current capability on LGATE, <18ns LGATE rise time, and pre-POR overvoltage protection-used in Intel®/AMD® microprocessor VRMs requiring tight deadtime control and startup safety.
For engineers reviewing the ISL6613AEIBZ-T datasheet, ISL6613AEIBZ-T pinout, ISL6613AEIBZ-T application, or ISL6613AEIBZ-T equivalent, key selection criteria include adaptive zero shoot-through timing, three-state PWM shutdown behavior, EPSOIC thermal performance (θJA = 50°C/W), bootstrap diode integration, and compatibility with ISL65xx multi-phase controllers in high-current DC/DC designs.
Technical Context
The ISL6613AEIBZ-T implements adaptive deadtime control via body-diode detection and auto-zeroed rDS(ON) offset compensation to minimize conduction overlap while ensuring safe turn-on sequencing. Its Pre-POR OVP connects PHASE to LGATE before VCC reaches 9.8V, limiting output voltage during upper-FET short-circuit startup faults.
It features a three-state PWM input with 1.8V–2.4V shutdown window and >400mV hysteresis, enabling controlled output stage shutdown without reverse-output transients. Unlike ISL6612A, ISL6613AEIBZ-T ties UGATE and LGATE drive rails to PVCC (5V–12V), eliminating separate VCC/PVCC voltage optimization trade-offs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 12V ±10% - bias supply for logic and control circuitry; UVLO thresholds at 9.8V (rise) and 7.6V (fall) |
| PVCC Drive Range | 5V to 12V ±10% - sets both upper and lower gate drive voltages simultaneously |
| LGATE Sink Current | 3A - enables fast turn-off of high-Qg low-side MOSFETs at up to 2MHz switching |
| LGATE Rise Time | 18ns (10%–90%, 3nF load) - supports high-frequency operation with minimal gate drive loss |
| Bootstrap Diode Rating | 36V - internal Schottky prevents overcharge during PHASE node negative swing |
| Operating Temp Range | −40°C to +85°C - qualified for industrial and computing power supply environments |
| Thermal Resistance θJA | 50°C/W - achieved via exposed pad in EPSOIC package for enhanced heat sinking |
Pinout & Package
ISL6613AEIBZ-T uses an 8-lead EPSOIC (Exposed Pad Small Outline) package (PKG DWG # M8.15B) with bottom thermal pad soldered to PCB ground for improved thermal performance. The exposed copper pad significantly reduces junction-to-board thermal resistance (θJC = 7°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - UGATE | Upper gate drive output | Drives gate of high-side N-MOSFET; referenced to PHASE, not GND |
| 2 - BOOT | Floating bootstrap supply | Connects to bootstrap capacitor (BOOT–PHASE); supplies charge for UGATE high-side drive |
| 3, 8 - N/C | No connection | Unbonded pins; must remain unconnected per datasheet |
| 4 - PWM | Three-state control input | Accepts controller PWM signal; enters shutdown state when held 1.8–2.4V for ≥245ns |
| 5 - GND | Bias and reference ground | Common return for logic, VCC, and small-signal paths; tied to exposed pad |
| 6 - LGATE | Lower gate drive output | Drives gate of low-side N-MOSFET; referenced to GND; 3A sink capability |
| 7 - VCC | Logic bias supply | +12V ±10% input for internal logic, POR, and protection circuits |
| 9 - PVCC | Power gate drive supply | +5V to +12V input powering both UGATE and LGATE drivers (ISL6613A-specific) |
| 10 - PHASE | Half-bridge switching node | Connects to source of upper FET and drain of lower FET; used for shoot-through detection and Pre-POR OVP |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive zero shoot-through protection | Uses body-diode detection and auto-zeroed rDS(ON) offset correction to dynamically adjust deadtime and prevent cross-conduction |
| Pre-POR overvoltage protection | Activates before VCC reaches 9.8V; connects PHASE to LGATE to clamp output voltage if upper FET shorts at startup |
| Three-state PWM input with hysteresis | 1.8–2.4V shutdown window + >400mV hysteresis prevents false triggering during power sequencing or noisy conditions |
| Integrated 36V bootstrap Schottky diode | Eliminates external diode; prevents bootstrap capacitor overcharge during PHASE node undershoot |
| Expandable bottom copper pad | Exposed thermal pad in EPSOIC package enables θJA = 50°C/W and supports >2W power dissipation |
Applications
| Core Regulator for AMD Microprocessors | High-Frequency VRM for Server CPUs |
|---|---|
Use Scenario: Powers AMD EPYC™ processors in dual-socket server motherboards using 3+1 phase ISL65xx-based VRMs. IC Role / Device Role / Timing Role: Dual-channel gate driver synchronizing upper/lower FETs per phase; provides adaptive deadtime and Pre-POR OVP for fault-tolerant startup. Use Value: Enables 1.8V/60A+ core rail with <1% transient droop and eliminates need for external Schottky clamping diodes during shutdown. |
Use Scenario: Implements 2MHz, 6-phase VRM in AI accelerator cards where space and thermal density constrain traditional SOIC solutions. IC Role / Device Role / Timing Role: High-speed gate driver with 18ns LGATE rise time and 50°C/W thermal resistance in EPSOIC package for compact, high-power-density layout. Use Value: Supports >92% efficiency at 40A/phase while maintaining <125°C junction temperature under full load and airflow-limited conditions. |
| Intel CPU Core Voltage Regulation | Industrial High-Current DC/DC Converter |
Use Scenario: Used in desktop motherboard VRMs compliant with Intel VRD13/VRD14 specifications for Core i9 processors. IC Role / Device Role / Timing Role: Synchronous rectified buck driver paired with ISL65xx PWM controller; delivers precise VID tracking and PGOOD signaling. Use Value: Meets Intel's ±3% output voltage tolerance requirement across load steps via fast propagation delays (<10ns) and matched UGATE/LGATE timing. |
Use Scenario: Powers FPGA I/O banks in programmable logic systems requiring stable 1.2V/30A rails with robust startup sequencing. IC Role / Device Role / Timing Role: Gate driver with three-state PWM shutdown and hysteresis ensures clean output ramp-down without reverse-voltage transients on hot-swap events. Use Value: Eliminates external reverse-protection diodes, reducing BOM count and PCB area by 12mm² per phase in multi-rail industrial power modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel synchronous buck gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6613BCRZ-T | Same functional spec but in 10-lead 3×3 DFN package (θJA = 48°C/W); no exposed pad on top surface; different pinout (N/C on pins 3/8 removed) | Preferred for ultra-dense layouts where height <0.8mm is critical; requires rework of bootstrap capacitor placement due to DFN pin arrangement | Select ISL6613BCRZ-T only when board space is constrained and thermal vias under DFN pad are feasible. |
| IR35201MTRPBF | Integrated PWM controller + dual gate driver; lacks Pre-POR OVP and three-state PWM; higher quiescent current (12mA vs 4.5mA @1MHz) | Suitable for new designs where controller/driver integration reduces component count; not drop-in compatible due to missing Pre-POR safety feature | Choose IR35201MTRPBF for greenfield VRM designs prioritizing integration; retain ISL6613AEIBZ-T where legacy controller reuse or startup safety is mandatory. |
Compared with ISL6613BCRZ-T, ISL6613AEIBZ-T offers superior thermal management via its EPSOIC exposed pad but requires larger PCB footprint; versus IR35201MTRPBF, it delivers dedicated gate drive precision and certified Pre-POR protection essential for high-reliability compute platforms.
Availability
ISL6613AEIBZ-T is available at Aetrix Electronics and suitable for high-current DC/DC converters, Intel®/AMD® microprocessor core regulators, and high-frequency VRM/VRD applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for ISL6613AEIBZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and timing solutions for automotive, industrial, and computing markets.
The ISL6613AEIBZ-T belongs to Renesas' high-performance power MOSFET driver product line, engineered specifically for multi-phase synchronous buck VRMs powering advanced microprocessors with stringent startup safety and high-frequency efficiency requirements.
FAQ
What is the function of the Pre-POR overvoltage protection in the ISL6613AEIBZ-T?
The Pre-POR overvoltage protection in the ISL6613AEIBZ-T activates before VCC reaches its 9.8V power-on reset threshold. During initial startup, it holds UGATE low and connects PHASE to LGATE, allowing the low-side MOSFET's threshold voltage to clamp the output-protecting the microprocessor if the upper MOSFET is shorted. This safety mechanism is unique to the ISL6613AEIBZ-T and remains active until VCC stabilizes above the rising threshold.
How does the three-state PWM input of the ISL6613AEIBZ-T prevent negative output transients?
The ISL6613AEIBZ-T's three-state PWM input enters shutdown mode when the PWM signal remains within the 1.8V–2.4V window for ≥245ns, pulling both UGATE and LGATE low simultaneously. This forces the low-side MOSFET off and prevents reverse current flow through its body diode, eliminating negative output voltage spikes during controlled shutdown-removing the need for external Schottky clamping diodes in systems using the ISL6613AEIBZ-T.
Can the ISL6613AEIBZ-T drive gate voltages below 5V?
No-the ISL6613AEIBZ-T specifies a minimum PVCC operating voltage of 5V ±10%, meaning the lowest valid gate drive rail is 4.5V. Driving below this violates the absolute maximum ratings and risks improper turn-on of N-channel MOSFETs due to insufficient VGS. For sub-5V gate drive, alternative drivers such as the ISL6615A (supporting 3.3V PVCC) must be considered-not the ISL6613AEIBZ-T.
What is the purpose of the N/C pins (3 and 8) on the ISL6613AEIBZ-T EPSOIC package?
Pins 3 and 8 on the ISL6613AEIBZ-T are designated No Connect (N/C) and are internally unbonded. They must remain unconnected on the PCB per the datasheet. These pins exist for mechanical symmetry and package compatibility with other members of the ISL661xA family (e.g., ISL6612A), but serve no electrical function in the ISL6613AEIBZ-T. Routing traces or placing vias on these pads may cause assembly defects or reliability issues.
Does the ISL6613AEIBZ-T support multi-phase synchronization with ISL65xx controllers?
Yes-the ISL6613AEIBZ-T is explicitly designed to interface with Renesas ISL65xx multi-phase PWM controllers. Its three-state PWM input, matched propagation delays (<10ns), and adaptive shoot-through logic ensure precise phase interleaving and current balancing across multiple channels. The datasheet confirms interoperability in typical 3-channel converter schematics using ISL65xx and ISL6612A/ISL6613A drivers, validating direct use of ISL6613AEIBZ-T in such topologies.
ISL6613AEIBZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.25A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 36 V
- Rise / Fall Time (Typ):
- 26ns, 18ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC-EP
ISL6613AEIBZ-T FAQ
1.How can I place an order for ISL6613AEIBZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6613AEIBZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6613AEIBZ-T reliable?
The price and inventory of ISL6613AEIBZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6613AEIBZ-T is usually 5 days.
3.What payment methods are accepted for ISL6613AEIBZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6613AEIBZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6613AEIBZ-T?
ISL6613AEIBZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6613AEIBZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6613AEIBZ-T?
For technical support, including ISL6613AEIBZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6613AEIBZ-T requirements.
6.How does Aetrix verify that ISL6613AEIBZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6613AEIBZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6613AEIBZ-T meets industry standards.
7.What is the process for return or replacement of ISL6613AEIBZ-T?
All ISL6613AEIBZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6613AEIBZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6613AEIBZ-T part is unused and in its original packaging.
Return procedure for ISL6613AEIBZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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