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Renesas ISL6615IRZ-T
- Part No.:
- ISL6615IRZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 10-VFDFN Exposed Pad
- Datasheet:
-
ISL6615IRZ-T.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,023
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Product details
Overview
ISL6615IRZ-T from Intersil is a dual high-speed synchronous MOSFET driver for buck converter half-bridge topologies, delivering 6A typical sink current on LGATE, 4A sink/2.5A source on UGATE, and supporting up to 1MHz switching with <10ns propagation delays. It integrates adaptive zero shoot-through protection, pre-POR overvoltage protection, and tri-state PWM input for microprocessor core regulation in Intel®/AMD® VRMs.
For engineers reviewing the ISL6615IRZ-T datasheet, ISL6615IRZ-T pinout, ISL6615IRZ-T application, or ISL6615IRZ-T equivalent, key selection considerations include its -40°C to +70°C operating range, 10-lead 3×3mm DFN package with exposed thermal pad, 6.4V VCC turn-on threshold, and compatibility with 3.3V/5V PWM logic in high-current POL DC/DC converters.
Technical Context
The ISL6615IRZ-T implements adaptive dead-time control via body-diode detection and LGATE voltage monitoring to minimize shoot-through risk while reducing freewheeling conduction loss. Its upper gate drive uses a bootstrap architecture with integrated 36V Schottky diode and overcharge prevention.
Pre-POR overvoltage protection connects PHASE to LGATE before VCC reaches 6.4V, limiting output voltage by the low-side MOSFET's VGS(th). Tri-state PWM input provides hysteresis (≥400mV) and 65ns holdoff time to suppress negative transients during power sequencing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Operating Range | 6.8V to 13.2V - powers internal logic and enables operation above 6.4V POR threshold |
| PVCC Operating Range | 4.5V to 13.2V - supplies both UGATE and LGATE drive rails simultaneously |
| LGATE Sink Current | 6A typical - ensures robust hold-down of low-side MOSFET during PHASE node rising edge (dV/dt immunity) |
| UGATE/LGATE Propagation Delay | 10ns typical - enables precise timing control at up to 1MHz switching frequency |
| Tri-State PWM Window | 1.32V to 1.82V - defines safe shutdown zone with hysteresis to prevent oscillation during bias sequencing |
| Pre-POR OVP Activation | Active before VCC ≥ 6.4V - ties PHASE to LGATE to clamp output voltage if high-side MOSFET shorts at startup |
| Thermal Resistance θJA | 48°C/W - achieved via exposed copper pad soldered to PCB ground, enabling >1.5W power dissipation |
Pinout & Package
Dual Flat No-Lead (DFN) 10-lead 3×3mm package with exposed thermal pad (L10.3x3); bottom-side copper pad must be soldered to PCB ground plane for thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - UGATE | Upper gate drive output | Drives gate of high-side N-MOSFET; referenced to PHASE node, requires bootstrap supply |
| 2 - BOOT | Floating bootstrap supply | Connects external capacitor to PHASE; powers UGATE drive stage during high-side conduction |
| 3 - N/C | No connection | Recommend connecting to GND per datasheet layout guidance |
| 4 - PWM | Control input | Accepts 3.3V/5V logic; enters tri-state within 1.32–1.82V window to disable outputs safely |
| 5 - PHASE | Switching node connection | Connects to source of upper MOSFET and drain of lower MOSFET; reference for UGATE and OVP |
| 6 - PVCC | Gate drive power supply | Supplies both UGATE and LGATE drivers; range 4.5–13.2V; requires local ceramic decoupling |
| 7 - N/C | No connection | Recommend connecting to PVCC per datasheet layout guidance |
| 8 - VCC | Bias supply input | Powers internal logic; 6.8–13.2V range; POR threshold at 6.4V typical |
| 9 - GND | Reference ground | Common return for VCC, PVCC, and signal references; must connect to low-impedance ground plane |
| 10 - LGATE | Lower gate drive output | Drives gate of low-side N-MOSFET; sinks 6A to prevent self-turn-on during high dV/dt events |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive zero shoot-through protection | Uses body-diode detection and LGATE voltage sensing to dynamically adjust dead time, minimizing conduction loss without risking cross-conduction |
| Pre-POR overvoltage protection | Activates before VCC reaches 6.4V by connecting PHASE to LGATE, limiting output voltage to VGS(th) of low-side MOSFET for load safety during startup faults |
| Tri-state PWM input with hysteresis | 400mV+ hysteresis and 65ns holdoff time prevents false shutdown during power sequencing transients and eliminates need for external Schottky clamping diodes |
| Integrated 36V bootstrap Schottky diode | Enables compact layout by eliminating external bootstrap diode; includes overcharging prevention to reduce stress on BOOT–PHASE pins |
| Expandable bottom copper pad | Exposed thermal pad soldered to PCB ground achieves θJA = 48°C/W, supporting >1.5W dissipation in high-frequency VRM applications |
Applications
| Microprocessor Core Regulation | POL DC/DC Converter |
|---|---|
|
Use Scenario: Regulating VCORE for Intel® Core™ i7 or AMD Ryzen™ processors in server/desktop motherboards. IC Role / Device Role / Timing Role: Dual gate driver controlling high-side/low-side N-MOSFETs in multiphase buck converter synchronized to Intersil ISL63xx PWM controller. Use Value: 6A LGATE sink current prevents low-side self-turn-on during 100V/ns PHASE transitions, ensuring stable VCORE under dynamic load steps. |
Use Scenario: Point-of-load conversion in telecom base station power modules requiring <1% output ripple at 50A. IC Role / Device Role / Timing Role: High-frequency (800kHz–1MHz) synchronous rectifier driver enabling fast transient response and minimal dead-time loss. Use Value: Adaptive zero dead-time control reduces body-diode conduction time, improving efficiency by 1.2% at 50A/1.2V compared to fixed dead-time drivers. |
| High-Efficiency VRD/VRM | Isolated Synchronous Rectification |
|
Use Scenario: Voltage regulator down (VRD) module for GPU power delivery in gaming laptops with strict thermal envelope. IC Role / Device Role / Timing Role: Gate driver in 2-phase interleaved buck supplying GPU core voltage; leverages tri-state PWM for coordinated phase shutdown. Use Value: Tri-state input hysteresis eliminates negative output transients during GPU sleep mode entry, removing need for external reverse-protection diodes. |
Use Scenario: Secondary-side synchronous rectification in 48V–12V isolated DC/DC converters for data center PSUs. IC Role / Device Role / Timing Role: Low-side gate driver for N-MOSFETs replacing Schottky diodes in forward/flyback topologies; driven by isolated gate drive signals. Use Value: 36V integrated bootstrap diode supports wide input range; pre-POR OVP protects downstream 12V loads during primary-side fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual synchronous MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR3584MTRPBF | 8A LGATE sink, 1.5MHz max frequency, integrated current sense amplifier; requires external bootstrap diode | Targeted at digital multiphase VRMs with PMBus interface; lacks pre-POR OVP and tri-state PWM hysteresis | Choose for systems needing current reporting and higher frequency; accept added BOM cost and layout complexity |
| LM5113SD/NOPB | 5A peak sink/source, 100V floating UVLO, no integrated bootstrap diode; supports 100V bootstrap voltage | Designed for high-input-voltage industrial DC/DC; lacks adaptive dead-time and pre-POR OVP | Choose for >60V input applications where ISL6615IRZ-T's 36V bootstrap limit is insufficient |
Compared with IR3584MTRPBF and LM5113SD/NOPB, the ISL6615IRZ-T offers unique pre-POR overvoltage protection and tri-state PWM hysteresis critical for microprocessor core rail safety, while its integrated 36V bootstrap diode simplifies layout versus alternatives requiring external components.
Availability
ISL6615IRZ-T is available at Aetrix Electronics and suitable for microprocessor core regulation, POL DC/DC converters, and high-efficiency VRM/VRD designs requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for ISL6615IRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil Corporation (now part of Renesas Electronics) designs high-performance analog and power management ICs for computing, communications, and industrial markets, with ISO9001-certified manufacturing.
The ISL6615IRZ-T belongs to Intersil's synchronous buck gate driver product line, engineered specifically for high-current, high-frequency voltage regulator modules powering Intel® and AMD® microprocessors with emphasis on shoot-through immunity and startup safety.
FAQ
What is the operating temperature range for the ISL6615IRZ-T?
The ISL6615IRZ-T is rated for an ambient temperature range of -40°C to +70°C, matching the "I" grade specification in the ordering table. Its maximum junction temperature is +125°C, and thermal design must account for θJA = 48°C/W in the 3×3mm DFN package with properly soldered thermal pad.
Does the ISL6615IRZ-T require an external bootstrap diode?
No, the ISL6615IRZ-T integrates a 36V-rated Schottky diode between PVCC and BOOT pins, eliminating the need for an external bootstrap diode. The device also includes bootstrap capacitor overcharging prevention to reduce voltage stress during PHASE node ringing.
How does the pre-POR overvoltage protection function in the ISL6615IRZ-T?
Before VCC rises above 6.4V, the ISL6615IRZ-T activates pre-POR OVP by connecting PHASE to LGATE. This limits output voltage to the low-side MOSFET's gate threshold voltage, protecting the load if the high-side MOSFET shorts during startup, normal operation, or shutdown.
What PWM logic levels does the ISL6615IRZ-T support?
The ISL6615IRZ-T supports both 3.3V and 5V PWM input logic. Its PWM input thresholds are 1.70V (rising) and 1.30V (falling) at VCC = 12V, with a tri-state shutdown window of 1.32V–1.82V and ≥400mV hysteresis to prevent false triggering during power sequencing.
Can the ISL6615IRZ-T drive multiple parallel MOSFETs per side?
Yes, the ISL6615IRZ-T can drive multiple parallel MOSFETs: its 6A LGATE sink and 4A UGATE sink currents accommodate typical gate charges of modern power MOSFETs. Designers must verify total gate charge (QG) and adjust bootstrap capacitance per Equation 1 in the datasheet to maintain sufficient UGATE drive voltage.
ISL6615IRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-VFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6.8V ~ 13.2V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 2.5A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 36 V
- Rise / Fall Time (Typ):
- 13ns, 10ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-DFN (3x3)
ISL6615IRZ-T FAQ
1.How can I place an order for ISL6615IRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6615IRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6615IRZ-T reliable?
The price and inventory of ISL6615IRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6615IRZ-T is usually 5 days.
3.What payment methods are accepted for ISL6615IRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6615IRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6615IRZ-T?
ISL6615IRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6615IRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6615IRZ-T?
For technical support, including ISL6615IRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6615IRZ-T requirements.
6.How does Aetrix verify that ISL6615IRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6615IRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6615IRZ-T meets industry standards.
7.What is the process for return or replacement of ISL6615IRZ-T?
All ISL6615IRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6615IRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6615IRZ-T part is unused and in its original packaging.
Return procedure for ISL6615IRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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