My Inquiry
My Account
Renesas ISL6622CRZ-T
- Part No.:
- ISL6622CRZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 10-VFDFN Exposed Pad
- Datasheet:
-
ISL6622CRZ-T.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,808
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISL6622CRZ-T from Renesas (formerly Intersil) is a VR11.1-compatible dual N-channel MOSFET driver for synchronous buck converters, delivering 3A sink current on LGATE and 2A sink on UGATE, with adaptive shoot-through protection and diode emulation for light-load efficiency in microprocessor core regulators.
For engineers reviewing the ISL6622CRZ-T datasheet, ISL6622CRZ-T pinout, ISL6622CRZ-T application, or ISL6622CRZ-T equivalent, key selection considerations include PSI-mode gate voltage optimization (5.75V/6.75V/7.75V selectable via GD_SEL), 10-lead DFN package thermal performance (θJA = 48°C/W), and compatibility with Intersil VR11.1 controllers for advanced CPU voltage regulation.
Technical Context
The ISL6622CRZ-T implements an adaptive zero-shoot-through protection circuit that monitors LGATE and UGATE-PHASE voltages to dynamically adjust dead time, preventing simultaneous conduction while minimizing propagation delays (tPDHL = 10 ns, tPDHU = 20 ns). Its PWM input supports three-state operation with defined rising (3.2 V) and falling (2.8 V) thresholds for upper gate control.
During PSI mode, the device activates Gate Voltage Optimization Technology (GVOT): LVCC is regulated to 5.75V, 6.75V, or 7.75V (typ.) via GD_SEL pin configuration, while UVCC supplies the upper gate independently (5–12 V range). Diode emulation enables discontinuous conduction mode by detecting inductor zero-current crossing and enforcing a minimum LGATE ON-time of 330 ns (typ.).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 6.8 V to 13.2 V - powers internal logic and LDO; must exceed 6.45 V POR threshold to enable operation |
| UVCC Range | 4.75 V to 13.2 V - independent upper gate supply rail enabling flexible high-side drive voltage selection |
| LGATE Sink Current | 3 A - sufficient to rapidly discharge large lower MOSFET gate charge and suppress dV/dt-induced self-turn-on |
| UGATE Rise/Fall Time | 26 ns / 18 ns (3 nF load) - supports >1 MHz switching frequencies with minimal timing uncertainty |
| PSI Mode LVCC Options | 5.75 V / 6.75 V / 7.75 V (typ.) - resistor-selectable via GD_SEL to balance gate charge loss vs. conduction loss at light loads |
| Bootstrap Diode Rating | 36 V - integrated Schottky prevents overcharging during PHASE node negative swing, eliminating external diode |
| Thermal Resistance θJA | 48 °C/W - achieved via 3×3 mm DFN package with exposed thermal pad, enabling higher power density than SOIC |
Pinout & Package
ISL6622CRZ-T uses a 10-lead 3×3 mm Dual Flat No-Lead (DFN) package with exposed thermal pad (PKG DWG L10.3x3), optimized for high-frequency DC/DC converter layouts requiring low inductance and enhanced heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE | Upper gate drive output | Drives high-side N-MOSFET gate; rated for VPHASE − 0.3 V to VBOOT + 0.3 V |
| BOOT | Floating bootstrap supply | Connects to bootstrap capacitor between BOOT and PHASE; powers high-side driver stage |
| GD_SEL | LVCC voltage select input | Resistor-to-GND sets PSI-mode LVCC to 5.75 V (float), 6.75 V (4.5 kΩ), or 7.75 V (GND) |
| PWM | Three-state control input | Accepts 0–2.5 V (tri-state shutdown), 2.5–3.2 V (invalid), >3.2 V (high-side on), <2.8 V (low-side on) |
| GND | Power and signal reference ground | Return path for all currents; must be connected to PCB ground plane with low-inductance layout |
| LGATE | Lower gate drive output | Drives low-side N-MOSFET gate; sinks 3 A to ensure fast turn-off under high dV/dt conditions |
| LVCC | Lower gate drive supply output | LDO-regulated output (5.75–7.75 V typ. in PSI mode); requires local 1 µF ceramic decoupling |
| UVCC | Upper gate drive supply input | Independent 5–12 V bias rail; decoupled locally to minimize switching noise coupling |
| VCC | Main bias supply input | 6.8–13.2 V primary supply powering logic, LDO, and bootstrap charging circuitry |
| PHASE | Switching node connection | Connects to source of upper MOSFET and drain of lower MOSFET; provides return path for UGATE drive current |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Dynamically adjusts dead time by monitoring LGATE and UGATE-PHASE voltages, eliminating fixed delay tuning and reducing risk of cross-conduction |
| Diode emulation in PSI mode | Detects inductor zero-current crossing and forces LGATE OFF, enabling true DCM and improving light-load efficiency without external sensing |
| Resistor-selectable LVCC in PSI mode | GD_SEL pin allows precise trade-off between gate charge loss (lower LVCC) and RDS(on) conduction loss (higher LVCC) for optimal system efficiency |
| Integrated 20 kΩ high-side gate-to-source resistor | Prevents upper MOSFET self-turn-on during high dV/dt startup events without adding external components or compromising normal operation |
| Pre-POR overvoltage protection | When VCC < 5.0 V, PHASE connects to LGATE via 10 kΩ internal resistor, clamping output voltage near lower MOSFET VGS(th) if upper FET shorts |
Applications
| Core Regulator for Advanced Microprocessors | High-Frequency VRM/VRD Module |
|---|---|
Use Scenario: Power delivery for Intel VR11.1-compliant CPUs requiring dynamic voltage scaling and deep power-down states. IC Role / Device Role / Timing Role: Synchronous rectified buck driver coordinating upper/lower N-MOSFETs under PSI protocol commands from VR11.1 controller. Use Value: Enables diode emulation and GVOT to maintain >90% efficiency at 1–5% load, critical for mobile and server CPU idle power targets. | Use Scenario: Compact, high-density voltage regulator module for telecom and networking ASICs operating at >500 kHz. IC Role / Device Role / Timing Role: High-speed gate driver with 10 ns propagation delays and 3 A LGATE sink capability ensuring clean, jitter-free switching at elevated frequencies. Use Value: DFN package thermal performance (θJA = 48°C/W) and low-inductance pinout support 30 A+ output current in space-constrained modules. |
| High Light-Load Efficiency DC/DC Converter | Multi-Phase CPU Core Supply |
Use Scenario: Point-of-load converter for FPGA I/O banks requiring stable 1.2 V at sub-amp loads with minimal quiescent consumption. IC Role / Device Role / Timing Role: Driver implementing adaptive dead time and three-state PWM to eliminate reverse current and negative output transients during light-load transitions. Use Value: Standby supply current of 5 mA (typ.) and diode emulation reduce no-load power loss by >40% versus fixed-frequency CCM designs. | Use Scenario: One phase of a 4-phase VR11.1-compliant CPU core supply delivering up to 120 A total output current. IC Role / Device Role / Timing Role: Phase-specific gate driver synchronized to interleaved PWM signals, leveraging GD_SEL to match LVCC to per-phase MOSFET characteristics. Use Value: Resistor-selectable LVCC allows per-phase optimization-e.g., 6.75 V for phases with larger lower FETs-improving overall system efficiency by 0.8–1.2%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous buck MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6622IRZ | Same functionality and pinout, but rated for -40°C to +85°C industrial temperature range versus 0°C to +70°C for ISL6622CRZ-T | Suitable for extended-temperature environments such as base station power supplies or automotive infotainment systems | Select ISL6622IRZ when ambient operating temperature exceeds 70°C or requires industrial-grade qualification |
| ISL6612CRZ | Single-channel variant (upper-side only); lacks LGATE, GD_SEL, LVCC, and PSI-mode features; no diode emulation or GVOT | Applicable only in asymmetric topologies or where lower-side drive is handled externally (e.g., discrete logic-level driver) | Choose ISL6612CRZ only for cost-sensitive, non-PSI applications where full synchronous control is unnecessary |
Compared with ISL6622IRZ, the ISL6622CRZ-T offers identical electrical performance but narrower temperature rating; compared with ISL6612CRZ, it delivers complete dual-drive functionality with advanced light-load optimizations essential for modern CPU VRMs.
Availability
ISL6622CRZ-T is available at Aetrix Electronics and suitable for high-frequency VRM/VRD modules, microprocessor core regulators, and multi-phase CPU power supplies requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for ISL6622CRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation acquired Intersil in 2017 and maintains its high-performance analog and power management portfolio, including precision gate drivers for computing and communications infrastructure.
The ISL6622CRZ-T belongs to Renesas' VR11.1-compliant synchronous buck driver family, designed specifically for high-efficiency, high-current core voltage regulation in advanced microprocessors and SoCs.
FAQ
What is the purpose of the GD_SEL pin on the ISL6622CRZ-T?
The GD_SEL pin on the ISL6622CRZ-T selects the regulated LVCC voltage level during PSI mode: floating configures 5.75 V, 4.5 kΩ to GND sets 6.75 V, and direct GND connection yields 7.75 V (all typical values). This resistor-based selection enables fine-tuning of lower gate drive voltage to optimize the trade-off between gate charge loss and conduction loss in light-load operation, directly impacting overall converter efficiency. The ISL6622CRZ-T uses this feature to implement Gate Voltage Optimization Technology (GVOT) without requiring external DACs or digital interfaces.
How does the ISL6622CRZ-T prevent shoot-through in synchronous buck converters?
The ISL6622CRZ-T prevents shoot-through using an advanced adaptive protection circuit that monitors both LGATE voltage and UGATE-PHASE differential voltage. It dynamically adjusts dead time by turning on the upper gate only after LGATE drops below ~1.75 V, and activating the lower gate only after the PHASE node falls below +0.8 V or 40 ns after UGATE-PHASE drops below ~1.75 V. This eliminates fixed-delay tuning, adapts to MOSFET gate charge variations, and ensures robust operation across process, voltage, and temperature. The ISL6622CRZ-T achieves this with propagation delays as low as 10 ns for LGATE turn-on (tPDHL), minimizing unnecessary dead time.
Does the ISL6622CRZ-T require an external bootstrap diode?
No, the ISL6622CRZ-T integrates a 36 V rated bootstrap Schottky diode, eliminating the need for an external component. This internal diode charges the bootstrap capacitor between BOOT and PHASE pins during the low-side conduction period and prevents overcharging during the negative PHASE swing, reducing component count and layout complexity. The ISL6622CRZ-T's bootstrap circuit is fully functional with only an external ceramic capacitor (typically 0.1–1 µF, X7R, 25 V rating) placed between BOOT and PHASE, simplifying design and improving reliability in high-frequency applications.
What is the function of the three-state PWM input on the ISL6622CRZ-T?
The three-state PWM input on the ISL6622CRZ-T defines distinct operational modes based on voltage level: 0–2.5 V places both UGATE and LGATE in tri-state (high-impedance) shutdown, 2.5–3.2 V is an invalid transition window, >3.2 V enables upper gate drive, and <2.8 V enables lower gate drive. This architecture prevents negative output voltage transients during shutdown by holding both gates low before entering tri-state, eliminating the need for external Schottky clamps. The ISL6622CRZ-T leverages this to provide controlled soft-start and safe power-down sequences required in CPU core regulation.
How does the ISL6622CRZ-T support light-load efficiency improvement?
The ISL6622CRZ-T improves light-load efficiency through two coordinated mechanisms: diode emulation and Gate Voltage Optimization Technology (GVOT). During PSI mode, it detects inductor zero-current crossing and turns off LGATE to enforce discontinuous conduction mode (DCM), eliminating reverse current and associated losses. Simultaneously, GVOT reduces LVCC to 5.75–7.75 V (selectable) to lower gate drive voltage, cutting switching losses dominated by gate charge at light loads. The ISL6622CRZ-T implements both features autonomously upon detection of the VR11.1 PSI signal, requiring no external control logic or firmware intervention.
ISL6622CRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-VFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6.8V ~ 13.2V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.25A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 36 V
- Rise / Fall Time (Typ):
- 26ns, 18ns
- Operating Temperature:
- 0°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-DFN (3x3)
ISL6622CRZ-T FAQ
1.How can I place an order for ISL6622CRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6622CRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6622CRZ-T reliable?
The price and inventory of ISL6622CRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6622CRZ-T is usually 5 days.
3.What payment methods are accepted for ISL6622CRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6622CRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6622CRZ-T?
ISL6622CRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6622CRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6622CRZ-T?
For technical support, including ISL6622CRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6622CRZ-T requirements.
6.How does Aetrix verify that ISL6622CRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6622CRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6622CRZ-T meets industry standards.
7.What is the process for return or replacement of ISL6622CRZ-T?
All ISL6622CRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6622CRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6622CRZ-T part is unused and in its original packaging.
Return procedure for ISL6622CRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISL6622CRZ-T Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
