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Renesas ISL6622IRZ
- Part No.:
- ISL6622IRZ
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 10-VFDFN Exposed Pad
- Datasheet:
-
ISL6622IRZ.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
ISL6622IRZ from Renesas (formerly Intersil) is a VR11.1-compatible dual N-channel MOSFET driver for synchronous buck converters, delivering 3A sink current on LGATE and 2A sink on UGATE, with adaptive shoot-through protection, diode emulation, and gate voltage optimization (GVOT) for microprocessor core regulators operating from –40°C to +85°C.
For engineers reviewing the ISL6622IRZ datasheet, ISL6622IRZ pinout, ISL6622IRZ application, or ISL6622IRZ equivalent, this page delivers verified package mapping (10-lead 3×3 DFN), PSI-mode LVCC voltage selection (5.75V/6.75V/7.75V), bootstrap diode rating (36V), propagation delays (tPDHL = 10 ns), and thermal resistance (θJA = 48°C/W) - all confirmed for ISL6622IRZ specifically.
Technical Context
The ISL6622IRZ implements an advanced PWM protocol that detects Intersil VR11.1 PSI commands to activate diode emulation (DE) and gate voltage optimization technology (GVOT), enabling discontinuous conduction mode (DCM) and selectable lower gate drive voltages (5.75V/6.75V/7.75V) during light-load operation. Its adaptive shoot-through protection monitors UGATE–PHASE and LGATE voltages with dynamic dead-time adjustment.
Unlike SOIC variants, the ISL6622IRZ uses a 10-lead DFN package with dedicated UVCC (5–12V upper gate supply) and GD_SEL pin to configure LVCC output via external resistor (floating = 5.75V, 4.5kΩ to GND = 6.75V, GND = 7.75V), while integrating a 36V-rated internal bootstrap Schottky diode and 20kΩ high-side gate-to-source resistor for dV/dt immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 6.8V to 13.2V - powers internal logic and LDO; must be stable before POR enables outputs |
| LVCC Output Options | 5.75V / 6.75V / 7.75V (typ.) - selected by GD_SEL pin impedance for PSI-mode gate loss optimization |
| LGATE Sink Current | 3A - supports fast turn-off of large low-side N-MOSFETs in high-current VRMs |
| UGATE/LGATE Propagation Delay | tPDHL = 10 ns, tPDHU = 20 ns - ensures precise timing alignment between high/low side switching |
| Bootstrap Voltage Rating | 36V - enables reliable high-side drive in 12V-input buck stages with margin |
| Thermal Resistance θJA | 48°C/W - measured on high-thermal-conductivity board; enables higher power density vs SOIC (100°C/W) |
| Operating Temperature | –40°C to +85°C - qualified for industrial and embedded CPU core regulator environments |
Pinout & Package
ISL6622IRZ is housed in a 10-lead 3×3 mm Dual Flat No-Lead (DFN) package with exposed thermal pad (L10.3x3 drawing), supporting enhanced heat dissipation and PCB space efficiency.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - UGATE | Upper gate drive output | Drives gate of high-side N-MOSFET; rated for 36V boot-referenced swing |
| 2 - BOOT | Floating bootstrap supply | Connects to bootstrap capacitor; internal 36V Schottky prevents overcharge |
| 3 - GD_SEL | LVCC voltage select input | Resistor tie-down sets PSI-mode LGATE drive voltage: floating = 5.75V, 4.5kΩ = 6.75V, GND = 7.75V |
| 4 - PWM | Three-state control input | Accepts VR11.1 PWM/PSI signals; thresholds at 1.1V/1.6V (rise/fall) enable shutdown window detection |
| 5 - GND | Power and signal reference ground | Return path for all drivers and LDO; must connect to exposed thermal pad |
| 6 - LGATE | Lower gate drive output | 3A sink capability; minimum ON-time of 330 ns in diode emulation mode |
| 7 - LVCC | LDO output for LGATE drive | Supplies regulated voltage to lower driver; decoupling capacitor required |
| 8 - UVCC | Upper gate drive supply input | Independent 5–12V rail; isolates UGATE drive from VCC noise and load transients |
| 9 - VCC | Main bias supply input | Powers logic, LDO controller, and UVCC regulator; POR threshold at 6.45V (typ.) |
| 10 - PHASE | Switching node connection | Connects to source of upper MOSFET and drain of lower MOSFET; referenced for UGATE drive |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive shoot-through protection | Dynamically adjusts dead time by monitoring UGATE–PHASE and LGATE voltage transitions to prevent simultaneous conduction |
| Diode emulation (DE) mode | Detects inductor zero-crossing and forces LGATE OFF to achieve DCM, improving light-load efficiency without external circuitry |
| Gate voltage optimization (GVOT) | Resistor-selectable LVCC (5.75V/6.75V/7.75V) during PSI mode reduces gate charge losses while maintaining sufficient VGS for RDS(on) |
| Integrated 20kΩ high-side gate-to-source resistor | Prevents self-turn-on during high dV/dt events at startup or fault conditions without external components |
| Pre-POR overvoltage protection | When VCC < POR threshold, PHASE connects to LGATE via 10kΩ internal resistor to clamp output voltage near MOSFET VTH |
Applications
| Core Regulator for Intel VR11.1 Microprocessors | High-Efficiency Server VRM |
|---|---|
Use Scenario: Powers multi-phase CPU core voltage rails in enterprise servers requiring tight VID tracking and PSI-mode light-load optimization. IC Role / Device Role / Timing Role: Synchronous rectified buck driver receiving VR11.1-compliant PWM and PSI signals; provides adaptive dead-time and GVOT-controlled LGATE voltage. Use Value: Enables >90% efficiency at 10% load via diode emulation and selectable 5.75V–7.75V LGATE drive, reducing gate charge losses without sacrificing conduction performance. |
Use Scenario: High-current DC/DC conversion in 1U rack-mounted servers where thermal density and transient response are critical. IC Role / Device Role / Timing Role: Dual N-MOSFET driver with 3A LGATE sink and 2A UGATE sink, supporting >50A per phase with fast 10–20 ns propagation delays. Use Value: 48°C/W θJA and exposed thermal pad allow sustained 3A drive current in compact DFN layout, eliminating need for SOIC heatsinking. |
| Industrial Embedded CPU Power | High-Frequency Notebook VRD |
Use Scenario: Core voltage regulation for ARM or x86 SoCs in ruggedized industrial controllers operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: VR11.1-compatible driver with extended temperature qualification and integrated pre-POR protection against upper MOSFET short-circuit faults. Use Value: Internal 10kΩ PHASE-to-LGATE clamp limits output overvoltage during startup/shutdown, protecting downstream logic without discrete Zener networks. |
Use Scenario: Thin-profile laptop voltage regulator delivering fast transient response for mobile CPUs with aggressive power gating. IC Role / Device Role / Timing Role: Compact 3×3 mm DFN driver with UVCC independence and fast rise/fall times (UGATE tR/tF = 26/18 ns) for >1 MHz switching. Use Value: Independent UVCC rail decouples high-side drive from VCC noise, improving EMI and stability in dense notebook PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous buck MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6622IBZ | 8-lead SOIC package; fixed 5.75V LVCC in PSI mode; no GD_SEL or UVCC pins; θJA = 100°C/W | Suitable for cost-sensitive, lower-power designs where DFN thermal performance and flexible gate drive are not required | Select ISL6622IBZ only if SOIC footprint and simplified biasing (no GD_SEL resistor network) are prioritized over thermal headroom and PSI-mode optimization flexibility |
| ISL6612IRZ | Single-output variant; drives only lower MOSFET; no UGATE/BOOT/PHASE pins; lacks PSI protocol support and GVOT | Used in asymmetric topologies or as companion to separate high-side driver; not VR11.1 compatible | Choose ISL6612IRZ only when only low-side drive is needed and VR11.1 PSI signaling is absent; not a functional substitute for ISL6622IRZ's dual-drive capability |
Compared with ISL6622IBZ, ISL6622IRZ offers superior thermal performance (48 vs 100°C/W), PSI-mode voltage flexibility, and independent UVCC routing - critical for high-density, high-efficiency VRMs. Against ISL6612IRZ, it provides full dual-drive functionality and VR11.1 compliance, making it irreplaceable in modern CPU core regulator designs.
Availability
ISL6622IRZ is available at Aetrix Electronics and suitable for high-current DC/DC converters, VR11.1-compliant CPU core regulators, and industrial embedded power systems requiring stable component supply across extended temperature ranges.
Supply support for ISL6622IRZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (acquired Intersil in 2017) is a global semiconductor leader specializing in analog, power, and embedded processing solutions for industrial, automotive, and computing markets.
The ISL6622IRZ belongs to Renesas' VR11.1-compliant power management IC portfolio, engineered specifically for high-efficiency, high-frequency synchronous buck regulation in advanced microprocessor core voltage applications.
FAQ
What is the function of the GD_SEL pin on the ISL6622IRZ?
The GD_SEL pin on the ISL6622IRZ selects the LVCC output voltage during PSI mode: floating sets 5.75V, a 4.5kΩ resistor to GND sets 6.75V, and direct GND connection sets 7.75V (all typical values). This resistor-based configuration enables gate drive voltage optimization to balance switching and conduction losses in light-load conditions - a feature exclusive to the DFN-packaged ISL6622IRZ and not present in the SOIC ISL6622IBZ.
Does the ISL6622IRZ support VR11.1 PSI protocol?
Yes, the ISL6622IRZ natively supports the VR11.1 PSI protocol via its PWM input pin. When a valid PSI command is detected, the ISL6622IRZ activates diode emulation (DE) and gate voltage optimization technology (GVOT), transitioning the lower gate drive to the LVCC voltage set by GD_SEL and enabling discontinuous conduction mode - all without external control logic.
What is the maximum allowable bootstrap voltage for the ISL6622IRZ?
The ISL6622IRZ features an internal 36V-rated bootstrap Schottky diode, meaning the maximum allowable voltage between BOOT and PHASE pins is 36V. This rating allows safe operation in 12V-input buck converters with margin for ringing and overshoot, and eliminates the need for an external bootstrap diode in standard implementations.
How does the ISL6622IRZ prevent shoot-through during switching transitions?
The ISL6622IRZ implements adaptive shoot-through protection by monitoring both UGATE–PHASE and LGATE voltages in real time. It enforces dynamic dead time - turning on the upper MOSFET only after LGATE falls below ~1.75V, and turning on the lower MOSFET only after UGATE–PHASE drops below +0.8V or 40ns after UGATE falls - preventing simultaneous conduction under varying MOSFET gate charge conditions.
What thermal advantages does the ISL6622IRZ offer over the ISL6622IBZ?
The ISL6622IRZ in 10-lead DFN package has θJA = 48°C/W, significantly lower than the ISL6622IBZ's SOIC θJA = 100°C/W. This 52% improvement stems from the DFN's exposed thermal pad and shorter internal thermal path, enabling higher continuous drive current (e.g., 3A LGATE sink) in thermally constrained layouts without additional heatsinking - a key differentiator for high-power density VRMs.
ISL6622IRZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-VFDFN Exposed Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6.8V ~ 13.2V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1.25A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 36 V
- Rise / Fall Time (Typ):
- 26ns, 18ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-DFN (3x3)
ISL6622IRZ FAQ
1.How can I place an order for ISL6622IRZ through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6622IRZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6622IRZ reliable?
The price and inventory of ISL6622IRZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6622IRZ is usually 5 days.
3.What payment methods are accepted for ISL6622IRZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6622IRZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6622IRZ?
ISL6622IRZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6622IRZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6622IRZ?
For technical support, including ISL6622IRZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6622IRZ requirements.
6.How does Aetrix verify that ISL6622IRZ is sourced from the original manufacturer or authorized distributors?
All ISL6622IRZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6622IRZ meets industry standards.
7.What is the process for return or replacement of ISL6622IRZ?
All ISL6622IRZ units undergo pre-shipment inspection (PSI). If there is an issue with ISL6622IRZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6622IRZ part is unused and in its original packaging.
Return procedure for ISL6622IRZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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