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Renesas ISL89165FBEAZ-T
- Part No.:
- ISL89165FBEAZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Datasheet:
-
ISL89165FBEAZ-T.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,814
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Product details
Overview
ISL89165FBEAZ-T from Renesas Electronics is a high-speed, dual-channel, 6A peak current power MOSFET driver with independent enable inputs (ENA/ENB) and complementary logic configuration (inverting INB, non-inverting INA). It features precision 3.3V CMOS input thresholds, <1Ω typical output ON-resistance, 20ns rise/fall times into 10nF, and UVLO at ~3.3V for robust start-up in synchronous rectifier control circuits.
For engineers reviewing the ISL89165FBEAZ-T datasheet, ISL89165FBEAZ-T pinout, ISL89165FBEAZ-T application, or ISL89165FBEAZ-T equivalent, key selection criteria include dead-time programmability via external RC networks on INA/INB/ENA/ENB, Miller plateau drive capability (≥4.7A sink, ≥5.2A source), thermal resistance θJC = 3°C/W, and EPSOIC-8 package compatibility with industrial SMPS and Class D amplifier gate-drive layouts.
Technical Context
The ISL89165FBEAZ-T implements separate, non-overlapping CMOS output stages per channel to eliminate shoot-through currents during high-frequency switching. Its precision input thresholds (37%/63% of 3.3V) enable accurate RC-based timing delays for synchronized FET turn-on/off sequencing in synchronous rectification.
Startup behavior is controlled by a three-stage VDD ramp sequence: below ~1V, outputs are weakly pulled low via internal 10kΩ resistors; between ~1V and UVLO (~3.3V), outputs are actively driven low with <1Ω impedance while ignoring logic inputs; above UVLO, outputs respond to inputs after a 400µs delay to prevent glitches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 4.5V to 16V - supports wide-input industrial and telecom SMPS rails without external regulation |
| Peak Output Current | ±6A - drives large gate capacitances directly, eliminating need for external buffer stages |
| Rise/Fall Time | 20ns (typ.) into 10nF - enables >10MHz switching in resonant converters and Class D amplifiers |
| Input Thresholds | 1.22V / 2.08V (3.3V CMOS) - enables precise RC time-delay generation for dead-time control |
| UVLO Threshold | ~3.3V with hysteresis - ensures clean, glitch-free startup and shutdown across temperature (-40°C to +125°C) |
| θJC | 3°C/W - allows >33W max power dissipation with PCB copper plane, critical for high-duty-cycle SR operation |
| Propagation Matching | <1ns (tRM/tFM) - supports tightly synchronized dual-FET control without skew-induced shoot-through risk |
Pinout & Package
ISL89165FBEAZ-T uses an 8-lead EPSOIC package (RoHS-compliant, M8.15D drawing) with exposed pad (EPAD) requiring direct connection to PCB ground plane for optimal thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (ENA) | Channel A Enable Input | CMOS-compatible logic input; must be high for OUTA to follow INA; interchangeable with INA for alternate logic |
| 2 (INA) | Channel A Non-inverting Input | Directly controls OUTA polarity; precision threshold enables RC delay for adaptive dead-time tuning |
| 3 (GND) | Power Ground Reference | Primary return path for output sink current and bias; connects to EPAD for low-inductance grounding |
| 4 (INB) | Channel B Inverting Input | Controls OUTB with inverted logic; complements INA to support half-bridge complementary drive |
| 5 (OUTB) | Channel B Output Driver | 6A peak sink/source capable CMOS output; designed for direct connection to N-channel MOSFET gates |
| 6 (VDD) | Positive Supply Input | 4.5–16V rail; powers internal bias circuitry and output stages; requires local 4.7µF decoupling |
| 7 (OUTA) | Channel A Output Driver | 6A peak sink/source output; matches OUTB timing within <1ns for synchronous rectifier pair control |
| 8 (ENB) | Channel B Enable Input | Independent enable for OUTB; allows dynamic disable of secondary-side FETs during light-load or fault conditions |
| EPAD | Thermal & Electrical Ground | Must be soldered to solid PCB ground plane; provides primary thermal path (θJC = 3°C/W) and low-impedance return |
Key Features
| Feature | Design Value |
|---|---|
| Dual AND-ed logic (input ∧ enable) | Enables independent per-channel gating-critical for adaptive SR control where ENB disables OUTB during reverse current events |
| Precision 3.3V CMOS thresholds | 1.22V/2.08V logic levels allow sub-10ns RC delay accuracy for dead-time optimization in ZVS/ZCS topologies |
| Non-overlapping output drivers | Hardware-enforced dead-time prevents shoot-through even under fast edge rates or layout asymmetry |
| Miller plateau drive capability | ≥4.7A sink / ≥5.2A source at VMILLER = 3–5V ensures rapid MOSFET transition through critical saturation region |
| UVLO with 400µs release delay | Eliminates output glitches during brown-out or soft-start sequences-prevents unintended FET turn-on during power ramp |
Applications
| Synchronous Rectifier (SR) Driver | Switch Mode Power Supply (SMPS) |
|---|---|
Use Scenario: Controlling secondary-side N-channel MOSFETs in isolated DC/DC converters to replace Schottky diodes. IC Role / Device Role / Timing Role: Dual-channel gate driver with complementary logic (INA non-inverting, INB inverting) and independent enables (ENA/ENB) for precise SR timing alignment with primary-side PWM. Use Value: Enables zero-voltage switching (ZVS) by delaying SR turn-on until primary-side FETs fully turn off-reducing conduction losses by up to 40% vs. diode rectification. |
Use Scenario: Driving high-side and low-side FETs in buck, boost, or LLC resonant converters operating at 100kHz–2MHz. IC Role / Device Role / Timing Role: High-current, low-propagation-mismatch (≤1ns) dual driver ensuring tight timing control for efficient hard-switched or resonant topologies. Use Value: Delivers ±6A peak current with 20ns edges into 10nF loads-supports fast switching with minimal gate charge loss and reduced EMI. |
| Class D Audio Amplifier | Motor Drive Half-Bridge |
Use Scenario: Gate-driving complementary MOSFET pairs in audio output stages requiring low distortion and high efficiency. IC Role / Device Role / Timing Role: Dual-channel driver with independent enables enabling mute functionality and preventing shoot-through during signal transitions. Use Value: Precision thresholds and <1ns propagation matching minimize crossover distortion; 3°C/W θJC sustains continuous 10W+ output power. |
Use Scenario: Driving N-channel half-bridge configurations in BLDC or stepper motor controllers. IC Role / Device Role / Timing Role: Complementary logic configuration (INA non-inverting, INB inverting) generates true complementary gate signals without external inverters. Use Value: Eliminates need for discrete level-shifters or inverters-reducing BOM count and layout complexity while maintaining <1ns channel-to-channel skew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL89164FBEAZ-T | Inverting logic on both channels (INA/INB); no complementary configuration | Requires external inversion for half-bridge use; unsuitable for native SR timing where one channel must mirror primary PWM and the other invert it | Select only when both outputs require identical inverting behavior-e.g., dual low-side drivers or matched inverter pairs |
| UCC27524ADR | 5A peak drive, 15ns rise/fall, no precision RC-delay thresholds, fixed 5V logic thresholds only | Lacks programmable dead-time via RC networks; limited to TTL/5V systems without VDD-proportional or 3.3V options | Choose for cost-sensitive, lower-current (<5A), fixed-threshold applications where RC timing is not required |
Compared with ISL89164FBEAZ-T and UCC27524ADR, the ISL89165FBEAZ-T uniquely combines complementary logic (inverting + non-inverting), 3.3V precision thresholds for RC dead-time tuning, and 6A drive-making it the only option among the three qualified for adaptive synchronous rectifier control in high-efficiency SMPS.
Availability
ISL89165FBEAZ-T is available at Aetrix Electronics and suitable for synchronous rectifier drivers, high-frequency switch mode power supplies, and Class D audio amplifier gate-drive applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant packaging.
Supply support for ISL89165FBEAZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.
The ISL89165FBEAZ-T belongs to Renesas' high-speed power MOSFET driver family engineered specifically for synchronous rectification and high-efficiency DC/DC conversion-emphasizing precision timing, shoot-through immunity, and thermal robustness in compact EPSOIC packaging.
FAQ
What logic configuration does the ISL89165FBEAZ-T implement?
The ISL89165FBEAZ-T implements a mixed logic configuration: INA is non-inverting and INB is inverting, enabling native complementary gate drive for half-bridge or synchronous rectifier topologies without external inverters. This differs from ISL89163 (both non-inverting) and ISL89164 (both inverting), making ISL89165FBEAZ-T uniquely suited for SR control where one channel mirrors the primary PWM and the other must invert it.
Does the ISL89165FBEAZ-T support RC-based dead-time programming?
Yes, the ISL89165FBEAZ-T supports precise RC-based dead-time programming via its precision 3.3V CMOS input thresholds (1.22V/2.08V). When external RC networks are placed on INA, INB, ENA, or ENB, the defined voltage thresholds enable accurate time-delay generation-critical for optimizing synchronous rectifier timing and preventing cross-conduction in high-efficiency SMPS designs.
What is the thermal performance of the ISL89165FBEAZ-T in EPSOIC packaging?
The ISL89165FBEAZ-T achieves θJC = 3°C/W in its 8-lead EPSOIC package due to the thermally enhanced EPAD. With proper PCB copper plane attachment, it supports up to 33.3W max power dissipation at +25°C-enabling sustained 6A peak drive operation in high-duty-cycle applications like server PSUs and industrial motor drives without external heatsinking.
Can the outputs of the ISL89165FBEAZ-T be paralleled to increase drive current?
No, the ISL89165FBEAZ-T outputs cannot be safely paralleled because its complementary logic configuration (INA non-inverting, INB inverting) prevents matched timing when OUTA and OUTB are tied together. Paralleling is only supported for ISL89163 and ISL89164 variants with identical logic polarity-confirmed in the datasheet's Application Information section (5.2).
What is the purpose of the 400µs delay after UVLO release in the ISL89165FBEAZ-T?
The 400µs delay after VDD crosses the UVLO threshold (~3.3V) prevents output glitches during power-up transients. During this interval, the ISL89165FBEAZ-T holds outputs inactive regardless of input states-ensuring MOSFET gates remain reliably off until internal biasing stabilizes. This feature is explicitly documented in Figure 10 and Section 4 of the FN7707 datasheet.
ISL89165FBEAZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 16V
- Logic Voltage - VIL, VIH:
- 1.22V, 2.08V
- Current - Peak Output (Source, Sink):
- 6A, 6A
- Input Type:
- Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 20ns, 20ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC-EP
ISL89165FBEAZ-T FAQ
1.How can I place an order for ISL89165FBEAZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL89165FBEAZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL89165FBEAZ-T reliable?
The price and inventory of ISL89165FBEAZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL89165FBEAZ-T is usually 5 days.
3.What payment methods are accepted for ISL89165FBEAZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL89165FBEAZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL89165FBEAZ-T?
ISL89165FBEAZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL89165FBEAZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL89165FBEAZ-T?
For technical support, including ISL89165FBEAZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL89165FBEAZ-T requirements.
6.How does Aetrix verify that ISL89165FBEAZ-T is sourced from the original manufacturer or authorized distributors?
All ISL89165FBEAZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL89165FBEAZ-T meets industry standards.
7.What is the process for return or replacement of ISL89165FBEAZ-T?
All ISL89165FBEAZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL89165FBEAZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL89165FBEAZ-T part is unused and in its original packaging.
Return procedure for ISL89165FBEAZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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