Renesas ISL89165FRTAZ

Overview

ISL89165FRTAZ from Renesas Electronics is a high-speed, dual-channel 6A peak MOSFET driver with independent enable inputs (ENA/ENB) and complementary logic configuration (inverting INB + non-inverting INA). It delivers 20ns rise/fall times into 10nF loads, supports precision RC-based dead-time control via 3.3V CMOS input thresholds, and features <1Ω typical output ON-resistance for synchronous rectifier gate drive in isolated DC/DC converters.

For engineers reviewing the ISL89165FRTAZ datasheet, ISL89165FRTAZ pinout, ISL89165FRTAZ application, or ISL89165FRTAZ equivalent, key selection criteria include its 3.3V logic threshold option, TDFN-8 (3×3 mm) thermal performance (θJC = 3°C/W), UVLO release at ~3.3V, and complementary input architecture enabling asymmetric timing control in SR and half-bridge topologies.

Technical Context

The ISL89165FRTAZ implements separate non-overlapping CMOS output stages to eliminate shoot-through current, with internal 10kΩ pull-downs below 1V VDD and active-low outputs between ~1V and UVLO (~3.3V). Its precision 37%/63% input thresholds (for 3.3V logic) enable accurate external RC delay networks for dead-time tuning and SR turn-on sequencing relative to primary-side FETs.

Startup behavior includes a 400µs delay after UVLO crossing before logic inputs take effect, while Miller plateau drive currents (±6A peak) and low rDS(ON) ensure robust gate charging/discharging of power MOSFETs up to 16V VDD. The complementary input structure (INA non-inverting, INB inverting) prevents output paralleling but enables independent channel control for asymmetrical switching schemes.

Key Specifications

Pinout & Package

ISL89165FRTAZ uses an 8-lead 3×3 mm TDFN package with exposed thermal pad (EPAD) requiring PCB ground plane connection for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel MOSFET driver applications.

Compared with ISL6752IRZ and UCC27524ADR, the ISL89165FRTAZ uniquely combines complementary inputs, 3.3V precision thresholds, and enable functionality-making it the only option among the three qualified for adaptive dead-time-controlled synchronous rectification in isolated DC/DC converters.

Availability

ISL89165FRTAZ is available at Aetrix Electronics and suitable for synchronous rectifier drivers, isolated DC/DC converters, and motor drive half-bridges requiring stable component supply, RoHS-compliant packaging, and guaranteed long-term industrial temperature range (-40°C to +125°C) operation.

Supply support for ISL89165FRTAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and datacenter applications.

The ISL89165FRTAZ belongs to Renesas' high-speed power MOSFET driver product line, engineered specifically for precision-timed synchronous rectification and isolated power conversion where timing accuracy, thermal robustness, and glitch-free startup are critical.

FAQ

What is the logic configuration of ISL89165FRTAZ inputs?

The ISL89165FRTAZ features a complementary input architecture: INA is non-inverting and INB is inverting, while both ENA and ENB are active-high enables. This allows independent control of OUTA (direct logic) and OUTB (inverted logic), enabling asymmetric timing for dead-time optimization in synchronous rectifier applications. The ISL89165FRTAZ datasheet confirms this configuration in Table 1 and Figure 3.

Does ISL89165FRTAZ support output paralleling to increase drive current?

No, ISL89165FRTAZ does not support output paralleling. Unlike the ISL89163/ISL89164, its complementary input structure (INA non-inverting, INB inverting) prevents safe paralleling of OUTA and OUTB. Attempting to parallel outputs would cause conflicting logic states and potential shoot-through. The ISL89165FRTAZ datasheet explicitly states this limitation in Section 5.2.

What is the UVLO threshold and hysteresis for ISL89165FRTAZ?

The ISL89165FRTAZ has an undervoltage lockout (UVLO) threshold of approximately 3.3V for Option A (3.3V logic), with ~25mV hysteresis. Below ~3.3V, outputs are actively driven low; above the threshold, a 400µs delay occurs before logic inputs take effect. This behavior ensures glitch-free startup and is confirmed in Section 2.4.1 and Figure 10 of the ISL89165FRTAZ datasheet.

Can ISL89165FRTAZ drive both high-side and low-side N-channel MOSFETs in a half-bridge?

Yes, ISL89165FRTAZ can drive both high-side and low-side N-channel MOSFETs in a half-bridge configuration. Its dual 6A outputs, complementary inputs, and non-overlapping drive architecture prevent shoot-through. However, high-side drive requires a floating supply (e.g., bootstrap or isolated bias), as ISL89165FRTAZ does not integrate level-shifting circuitry. This capability is validated in typical application circuits in Section 5.4 of the ISL89165FRTAZ datasheet.

What package type and thermal specifications apply to ISL89165FRTAZ?

ISL89165FRTAZ uses an 8-lead 3×3 mm TDFN package with exposed thermal pad (EPAD), RoHS-compliant and moisture-sensitive level 2a. Its thermal resistance is θJC = 3°C/W (junction-to-case) and θJA = 44°C/W (junction-to-ambient, free air). Proper EPAD soldering to a PCB ground plane is mandatory to achieve rated thermal performance, as specified in Section 2.2 and Package Outline Drawings of the ISL89165FRTAZ datasheet.