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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISP12DP06NMXTSA1

Name: ISP12DP06NMXTSA1
Brand: Infineon Technologies
SKU: ISP12DP06NMXTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISP12DP06NMXTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ISP12DP06NMXTSA1.pdf

Description:: MOSFET P-CH 60V 2.8A SOT223-4

Quantity:: RFQ Add To RFQ list

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Inventory:1,060

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Product details

Overview

ISP12DP06NMXTSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 125 mΩ maximum R_DS(on) at V_GS = -10 V and I_D = -2.8 A, with 100% avalanche tested ruggedness. It serves as a high-reliability power switch in industrial DC-DC converters, reverse polarity protection circuits, and load switching applications where low conduction loss and robust transient handling are required.

For engineers reviewing the ISP12DP06NMXTSA1 datasheet, ISP12DP06NMXTSA1 pinout, ISP12DP06NMXTSA1 application, or ISP12DP06NMXTSA1 equivalent, key selection criteria include verified -60 V V_DS, 125 mΩ R_DS(on) at -10 V gate drive, SOT-223-4 package thermal performance (R_thJA = 70 °C/W), -2.8 A continuous drain current at 25 °C, and integrated body diode with 33 ns reverse recovery time.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate-to-source bias for turn-on. Its gate threshold voltage range (-2.1 V to -4 V) ensures stable logic-level compatibility with standard microcontroller GPIOs when driven through level-shifting or open-drain configurations. The 5.2 S transconductance and 20.2 nC total gate charge support efficient switching up to several hundred kHz in hard-switched topologies.

Thermal design relies on its SOT-223-4 package with drain-connected pins (2 and 4) providing direct PCB copper thermal path. Junction-to-soldering-point resistance of 25 °C/W enables reliable operation under pulsed loads up to 11.2 A, while the 652 mJ single-pulse avalanche energy rating supports unclamped inductive switching in relay drivers and solenoid controls.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V industrial bus and automotive battery reverse-protection designs.
R_DS(on), max	125 mΩ @ V_GS = -10 V, I_D = -2.8 A - Confirmed conduction loss yielding ≤1 mW static power dissipation per mA of load current at full rating.
I_D, cont	-2.8 A @ T_A = 25 °C - Continuous current capability with 4.2 W power dissipation limit; derates to -1.7 A at 100 °C ambient.
V_GS(th)	-2.1 to -4 V - Gate threshold span ensuring predictable turn-on across temperature and process variation; avoids partial-enhancement in margin-critical control paths.
E_AS	652 mJ - Single-pulse avalanche energy rating enabling robust operation in unclamped inductive load switching without external snubbers.
Q_g	20.2 nC - Total gate charge determining driver strength requirement; compatible with standard logic-level gate drivers delivering ≥1 A peak output.
t_r/t_f	9 ns / 7 ns - Verified rise/fall times at V_DD = -30 V, I_D = -2.8 A, R_G,ext = 1.6 Ω; supports <500 kHz PWM in buck or linear regulator stages.

Pinout & Package

ISP12DP06NMXTSA1 uses the PG-SOT223-4 package (SOT-223-4), a surface-mount outline with exposed drain pad for enhanced thermal conduction. Pins 2 and 4 are internally connected to the drain terminal and must be soldered to a large copper pour for optimal thermal management.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring negative voltage relative to source to turn on; high-impedance node sensitive to ESD and noise coupling.
Pin 2	Drain	Main high-side current path; electrically tied to Pin 4; requires low-inductance PCB routing and thermal pad connection.
Pin 3	Source	Reference node for gate drive and current return path; connects to system ground or floating rail depending on topology.
Pin 4	Drain	Second drain connection for improved thermal and current distribution; must be routed to same net as Pin 2.

Key Features

Feature	Design Value
P-Channel enhancement mode	Enables high-side switching without bootstrap circuitry; simplifies power stage layout in isolated DC-DC and battery management systems.
100% avalanche tested	Guarantees minimum 652 mJ single-pulse energy handling; eliminates need for external clamping in relay/solenoid driver designs.
R_DS(on) = 125 mΩ max @ -10 V	Reduces conduction loss by >30% versus legacy -60 V P-MOSFETs; improves efficiency in 12–48 V industrial power rails.
SOT-223-4 with dual drain pins	Provides 25 °C/W junction-to-soldering-point thermal resistance; supports 1.8 W continuous dissipation at 100 °C ambient with minimal heatsinking.
Halogen-free & RoHS compliant	Fulfills IEC61249-2-21 and EU RoHS Directive 2011/65/EU requirements; suitable for export-controlled and medical-grade assemblies.

Applications

Industrial DC-DC Converters

Reverse Polarity Protection

Use Scenario: Used as synchronous rectifier or high-side switch in non-isolated buck converters supplying 3.3 V/5 V logic rails from 24 V factory automation inputs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active high-side switch controlled by microcontroller GPIO with pull-up resistor.

Use Value: 125 mΩ R_DS(on) limits conduction loss to <150 mW at 1 A load, improving converter efficiency by 2.1% over comparable -60 V devices.

Use Scenario: Placed in series with main power input to prevent damage from accidental reverse battery connection in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET acting as ideal diode replacement; conducts only when V_IN is correctly polarized.

Use Value: Body diode forward voltage of -0.78 V reduces voltage drop by 0.32 V versus Schottky solution, preserving >97% of nominal 24 V supply headroom.

Load Switching in Motor Drives

Power OR-ing Circuits

Use Scenario: Controls power delivery to auxiliary 12 V fans or sensors in servo motor drives during standby and active modes.

IC Role / Device Role / Timing Role: Low-side or high-side load switch managed by FPGA I/O with slew-rate controlled gate drive.

Use Value: 33 ns reverse recovery time and 63 nC Q_rr minimize shoot-through risk during fast turn-off, supporting 100 kHz enable/disable cycling.

Use Scenario: Implements redundant 48 V power supply OR-ing in industrial networking equipment with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (one per supply) performing automatic source selection based on voltage priority.

Use Value: Matched -2.1 V to -4 V V_GS(th) ensures consistent turn-on behavior across units, eliminating voltage-hysteresis-induced oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9024NTRPBF	R_DS(on) = 175 mΩ @ -10 V; V_DS = -55 V; SOT-223 package; no avalanche rating specified	Limited to 55 V systems; higher conduction loss increases thermal stress in 48 V bus applications	Select only if voltage margin is sufficient and cost sensitivity outweighs efficiency requirements
DMG2305UVT-7	R_DS(on) = 48 mΩ @ -4.5 V; V_DS = -20 V; SOT-23 package; lower voltage rating	Not suitable for 48 V or 24 V reverse protection; restricted to 12 V embedded subsystems	Prefer for space-constrained 12 V logic rails where ultra-low gate drive voltage is mandatory

Compared with IRFR9024NTRPBF and DMG2305UVT-7, ISP12DP06NMXTSA1 uniquely balances -60 V rating, 125 mΩ conduction loss, and guaranteed avalanche ruggedness-making it the only option qualified for industrial 48 V reverse polarity protection and unclamped inductive load switching without derating.

Availability

ISP12DP06NMXTSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, reverse polarity protection circuits, and motor drive auxiliary load switching requiring stable component supply and long-term manufacturability.

Supply support for ISP12DP06NMXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to JEDEC industrial standards.

This device belongs to the OptiMOSTM Small Signal Transistor product line, engineered specifically for high-efficiency, high-reliability power switching in industrial automation, building control, and renewable energy systems where ruggedness and thermal stability are critical.

FAQ

Is ISP12DP06NMXTSA1 suitable for high-frequency PWM applications?

Yes, with verified 9 ns rise time and 7 ns fall time at V_DD = -30 V and I_D = -2.8 A using 1.6 Ω external gate resistor, it supports clean switching up to 500 kHz in hard-switched topologies. Its 20.2 nC total gate charge requires a driver capable of ≥1 A peak current to maintain timing integrity.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C per JEDEC qualification. At 25 °C ambient, continuous operation at -2.8 A yields ~100 °C junction rise (ΔT = P_diss × R_thJA = 4.2 W × 70 °C/W), keeping T_j well within limit. Derating is required above 100 °C ambient.

Does ISP12DP06NMXTSA1 include an integrated body diode, and what are its characteristics?

Yes, it features a monolithic body diode with -1.5 A continuous forward current rating, -0.78 V typical forward voltage at -1.5 A and 25 °C, and 33 ns reverse recovery time. These parameters are fully characterized in Table 7 and Diagram 12 of the Rev. 2.0 datasheet.

Can ISP12DP06NMXTSA1 be used in parallel configurations for higher current handling?

Parallel operation is feasible due to its positive temperature coefficient of R_DS(on) (verified in Diagram 9), which promotes current sharing. However, matched gate drive layout, identical PCB copper area per device, and individual gate resistors are mandatory to avoid thermal runaway or current imbalance.

ISP12DP06NMXTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 520µA

Gate Charge (Qg) (Max) @ Vgs:: 20.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 4.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

ISP12DP06NMXTSA1 FAQ

1.How can I place an order for ISP12DP06NMXTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISP12DP06NMXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISP12DP06NMXTSA1 reliable?

The price and inventory of ISP12DP06NMXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISP12DP06NMXTSA1 is usually 5 days.

3.What payment methods are accepted for ISP12DP06NMXTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISP12DP06NMXTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISP12DP06NMXTSA1?

ISP12DP06NMXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISP12DP06NMXTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISP12DP06NMXTSA1?

For technical support, including ISP12DP06NMXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISP12DP06NMXTSA1 requirements.

6.How does Aetrix verify that ISP12DP06NMXTSA1 is sourced from the original manufacturer or authorized distributors?

All ISP12DP06NMXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISP12DP06NMXTSA1 meets industry standards.

7.What is the process for return or replacement of ISP12DP06NMXTSA1?

All ISP12DP06NMXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISP12DP06NMXTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISP12DP06NMXTSA1 part is unused and in its original packaging.

Return procedure for ISP12DP06NMXTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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