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Infineon Technologies ISP75DP06LMXTSA1
- Part No.:
- ISP75DP06LMXTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ISP75DP06LMXTSA1.pdf
- Description:
- MOSFET P-CH 60V 1.1A SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:1,011
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Product details
Overview
ISP75DP06LMXTSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in SOT-223-4 package, rated for -60 V drain-source voltage, 750 mΩ max RDS(on) at VGS = -4.5 V, -1.1 A continuous drain current, and fully qualified for industrial applications per JEDEC. It serves as a logic-level load switch in low-power DC-DC converters and battery protection circuits.
For engineers reviewing the ISP75DP06LMXTSA1 datasheet, ISP75DP06LMXTSA1 pinout, ISP75DP06LMXTSA1 application, or ISP75DP06LMXTSA1 equivalent, key selection criteria include its -4.5 V logic-compatible gate threshold, 100% avalanche-tested ruggedness, low thermal resistance (RthJA = 70 °C/W), and integrated body diode with 23 ns reverse recovery time.
Technical Context
This device operates in enhancement mode with a typical gate threshold voltage of -1.5 V and exhibits stable RDS(on) across temperature - 750 mΩ max at 25 °C and ~1.5× higher at 150 °C. Its gate charge profile shows Qg = 4.0 nC and Qgd = 1.1 nC, enabling efficient switching in low-frequency (<100 kHz) power control.
The integrated body diode supports bidirectional current flow with VSD = -0.9 to -1.2 V at -1.1 A and fast trr = 23 ns under defined di/dt conditions. Thermal design is supported by validated junction-to-ambient resistance (70 °C/W on 6 cm² FR4 PCB) and transient impedance curves for pulsed operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage for high-side negative-rail switching in 48 V systems |
| RDS(on), max | 750 mΩ @ VGS = -4.5 V - Enables <1.2 W conduction loss at -1.1 A, suitable for thermally constrained PCBs |
| ID, cont | -1.1 A @ TA = 25 °C - Continuous current rating with 70 °C/W thermal path on standard FR4 |
| VGS(th) | -1.0 to -2.0 V - Logic-level compatible with 3.3 V/5 V microcontroller outputs without level shifting |
| EAS | 36 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients |
| Ciss | 120 pF - Input capacitance enables predictable gate drive timing with standard 10–100 Ω series resistors |
| trr | 23 ns - Fast reverse recovery supports synchronous rectification in buck converters up to 500 kHz |
Pinout & Package
Package: PG-SOT223-4 (SOT-223-4), surface-mount, thermally enhanced with exposed drain pad connected to pins 2 and 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts logic-level voltage (-4.5 V min) to fully enhance channel |
| Pin 2 & 4 | Drain | High-side switched node; electrically and thermally tied to exposed copper pad for heat dissipation |
| Pin 3 | Source | Reference node for gate drive and current return path; connects to system ground or negative rail |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free, RoHS & halogen-free | Complies with IEC61249-2-21; eliminates hazardous substances for industrial and automotive supply chains |
| 100% avalanche tested | Each unit validated for single-pulse EAS = 36 mJ - guarantees reliability in inductive load switching |
| Logic-level gate drive | VGS(th) ≤ -2.0 V ensures full enhancement with 3.3 V GPIO, reducing BOM count vs. gate drivers |
| Enhancement-mode operation | Normally-off behavior prevents unintended conduction during power-up or MCU reset sequences |
| OptiMOS™ technology | Optimized cell layout delivers lower RDS(on) × Qg figure-of-merit than standard trench MOSFETs |
Applications
| Power Supply Load Switch | Battery Protection Circuit |
|---|---|
|
Use Scenario: Isolating auxiliary rails (e.g., 12 V sensor bus) from main power during standby or fault. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by microcontroller GPIO. Use Value: Low RDS(on) minimizes dropout voltage (<0.8 V at 1 A), preserving system efficiency without external driver. |
Use Scenario: Reverse-current blocking and over-discharge cutoff in 2S–4S Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional current control. Use Value: Integrated body diode with 23 ns trr enables fast response to overcurrent events without external Schottky. |
| Industrial Sensor Interface | Low-Frequency Motor Driver |
|
Use Scenario: Power gating for analog front-end ICs (e.g., precision ADCs, op-amps) in programmable logic controllers. IC Role / Device Role / Timing Role: Precision on/off control of sensor bias rails with minimal leakage (IDSS ≤ -100 µA at -60 V). Use Value: -1.1 A rating and -60 V VDS support 24 V industrial buses while maintaining >10-year shelf-life stability. |
Use Scenario: Driving small brushed DC motors (<5 W) in HVAC actuators or valve positioners. IC Role / Device Role / Timing Role: Low-frequency PWM-controlled H-bridge half-bridge element. Use Value: Avalanche rating (36 mJ) absorbs flyback energy from motor inductance without snubber components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 48 mΩ @ -4.5 V (lower), but VDS = -20 V only - unsuitable for 48 V systems | Limited to ≤24 V rails; better for portable electronics, not industrial 48 V infrastructure | Select when board space is critical and voltage stress <20 V; avoid for telecom or factory automation |
| IRLML6344TRPBF | RDS(on) = 110 mΩ @ -4.5 V, VDS = -20 V, SOT-23 package - lower thermal capability (RthJA ≈ 200 °C/W) | Lower power handling; requires derating above 300 mA ambient; no avalanche rating specified | Prefer for ultra-low-power IoT nodes where peak current <300 mA and voltage ≤12 V |
Compared with DMG2305UVT-7 and IRLML6344TRPBF, ISP75DP06LMXTSA1 uniquely balances -60 V rating, industrial-grade avalanche ruggedness, and SOT-223 thermal performance - making it the only option among the three qualified for 48 V industrial power switching with JEDEC industrial qualification.
Availability
ISP75DP06LMXTSA1 is available at Aetrix Electronics and suitable for industrial sensor interfaces, battery management systems, and low-frequency motor control requiring stable component supply across extended product lifecycles.
Supply support for ISP75DP06LMXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to the OptiMOS™ Small Signal Transistor product line, engineered for high-reliability, logic-level P-channel switching in industrial and automotive power systems where ruggedness, thermal stability, and long-term parametric consistency are critical.
FAQ
Is ISP75DP06LMXTSA1 suitable for hot-swap applications?
Yes - its -60 V VDS rating, 100% avalanche testing (36 mJ), and low gate charge (Qg = 4.0 nC) enable controlled inrush limiting and safe insertion into live backplanes. The body diode's 23 ns trr also suppresses voltage overshoot during plug-in transients in 24–48 V systems.
What is the maximum PCB copper area required for full-rated -1.1 A operation?
Full -1.1 A continuous current requires a 6 cm² copper pour on the drain-connected layer of a 1.5 mm FR4 PCB, per Infineon's thermal validation. With less copper (e.g., 2 cm²), derating to ≤0.6 A at 25 °C ambient is necessary to maintain Tj ≤ 150 °C.
Does ISP75DP06LMXTSA1 require a gate resistor for logic-level driving?
A gate resistor (10–47 Ω) is recommended to dampen ringing caused by Ciss = 120 pF and parasitic inductance, especially at switching frequencies >10 kHz. No resistor is needed for static on/off control, but it improves EMI and reduces shoot-through risk in bridge configurations.
Can this MOSFET replace an N-channel device in high-side switching?
Yes - as a P-channel device, ISP75DP06LMXTSA1 simplifies high-side switching by eliminating the need for a floating gate driver. Its -4.5 V logic compatibility allows direct connection to 3.3 V/5 V MCU GPIO, unlike most N-channel alternatives which require level-shifting or charge-pump circuitry.
ISP75DP06LMXTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 77µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 120 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 4.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
ISP75DP06LMXTSA1 FAQ
1.How can I place an order for ISP75DP06LMXTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISP75DP06LMXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISP75DP06LMXTSA1 reliable?
The price and inventory of ISP75DP06LMXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISP75DP06LMXTSA1 is usually 5 days.
3.What payment methods are accepted for ISP75DP06LMXTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISP75DP06LMXTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISP75DP06LMXTSA1?
ISP75DP06LMXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISP75DP06LMXTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISP75DP06LMXTSA1?
For technical support, including ISP75DP06LMXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISP75DP06LMXTSA1 requirements.
6.How does Aetrix verify that ISP75DP06LMXTSA1 is sourced from the original manufacturer or authorized distributors?
All ISP75DP06LMXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISP75DP06LMXTSA1 meets industry standards.
7.What is the process for return or replacement of ISP75DP06LMXTSA1?
All ISP75DP06LMXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISP75DP06LMXTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISP75DP06LMXTSA1 part is unused and in its original packaging.
Return procedure for ISP75DP06LMXTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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