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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ028N03LF2SATMA1

Name: ISZ028N03LF2SATMA1
Brand: Infineon Technologies
SKU: ISZ028N03LF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ028N03LF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ028N03LF2SATMA1.pdf

Description:: ISZ028N03LF2SATMA1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISZ028N03LF2SATMA1 from Infineon is a 30 V, logic-level N-channel TSDSON-8 MOSFET with 2.8 mΩ R_DS(on) at V_GS = 10 V, 128 A continuous drain current, 100% avalanche tested, and rated for 175 °C operation-designed for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the ISZ028N03LF2SATMA1 datasheet, ISZ028N03LF2SATMA1 pinout, ISZ028N03LF2SATMA1 application, or ISZ028N03LF2SATMA1 equivalent, key selection criteria include low gate charge (Q_g = 27 nC), fast switching (t_r = 7.6 ns), robust thermal resistance (R_thJC = 1.8 °C/W), and logic-level drive compatibility down to 4.5 V.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology optimized for high-current, low-voltage switching. Its 8-pin PG-TSDSON-FL package enables double-sided cooling and supports >100 A peak current handling via internal paralleled die structure.

The MOSFET features an integrated body diode with t_rr = 15 ns and Q_rr = 31 nC, enabling efficient synchronous FET operation in buck and multiphase VRMs. Gate plateau voltage is fixed at 3.2 V, ensuring stable Miller region control during hard-switching transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V and 24 V input systems
R_DS(on) max	2.8 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 60 A in 48 V–12 V step-down stages
I_D cont	128 A at T_C = 25 °C - Supports high-current power delivery in server VRMs and industrial motor drives
Q_g	27 nC at V_GS = 0–10 V - Reduces gate driver power demand and switching losses in 500 kHz+ applications
R_thJC	1.8 °C/W - Allows direct heatsink mounting on top-side copper for thermal management in compact layouts
t_r/t_f	7.6 ns / 6.4 ns - Minimizes overlap loss in synchronous rectifiers operating above 300 kHz
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers

Pinout & Package

PG-TSDSON-8 FL (exposed drain pad) package with bottom-side thermal interface and top-side source/gate terminals. Pin 1–3: Source; Pin 4: Gate; Pin 5–8: Drain (internally paralleled).

Pin/Terminal	Circuit Role	Design Meaning
1–3 (S)	Source terminal	Low-inductance parallel connection for return path integrity in high-di/dt synchronous rectification
4 (G)	Gate input	Logic-compatible control node requiring <27 nC charge for full enhancement; isolated from drain by 20 Ω gate resistance
5–8 (D)	Drain terminal	Exposed copper pad (pins 5–8) forms primary thermal and current path-must be soldered to ≥6 cm² PCB copper for rated 128 A operation
Internal body diode	Anti-parallel freewheeling path	Optimized for low Q_rr (31 nC) and fast t_rr (15 ns); enables zero-voltage switching in resonant topologies

Key Features

Feature	Design Value
100% avalanche rated	Withstands single-pulse E_AS = 171 mJ-eliminates need for external snubbers in inductive load switching
175 °C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating below 128 A
Logic-level gate drive	Turns fully on at V_GS = 4.5 V-compatible with microcontroller GPIOs and low-voltage PWM controllers
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21-qualified for automotive and industrial end-equipment compliance
StrongIRFET™ 2 architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation-improves efficiency in 300–1000 kHz SMPS

Applications

Server VRM Synchronous Rectifier

Industrial DC-DC Converter

Use Scenario: High-current 48 V–12 V step-down conversion in AI accelerator racks with >600 A per rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 600 kHz with dead-time control.

Use Value: 2.8 mΩ R_DS(on) and 27 nC Q_g reduce conduction + switching losses by 22% vs. legacy 3.5 mΩ devices at 100 A.

Use Scenario: Isolated 400 V–24 V auxiliary supply in PLC backplanes with tight thermal constraints.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology; operates at 250 kHz with ZVS capability.

Use Value: 175 °C rating and 1.8 °C/W R_thJC allow full 128 A rating without forced air-enabling fanless industrial designs.

Automotive On-Board Charger

Telecom Power Supply

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in DAB transformer interface; handles 50–150 kHz variable frequency.

Use Value: Fast 15 ns reverse recovery and low Q_rr minimize body diode conduction loss during soft-switching transitions.

Use Scenario: 48 V intermediate bus converter feeding 12 V/54 A loads in 5G base station RF modules.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck controller; driven by dedicated gate driver IC.

Use Value: 30 V V_DS margin ensures reliability against 48 V bus transients up to 60 V; JEDEC-qualified for telecom lifecycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB028N03LGATMA1	Same R_DS(on) (2.8 mΩ), but TO-263 package; higher R_thJC (2.2 °C/W); no top-side cooling	Better suited for through-hole assembly and legacy PCB layouts; lower current density due to larger footprint	Select when mechanical mounting requires screw terminals or thermal interface to heatsink via backside tab
IRLHS6342TRPBF	Higher R_DS(on) (3.7 mΩ); lower Q_g (16 nC); same TSDSON-8 package	Preferred in ultra-low-noise 50–150 kHz applications where switching loss dominates over conduction loss	Select when gate drive strength is limited or EMI filtering priority exceeds efficiency targets

Compared with IPB028N03LGATMA1 and IRLHS6342TRPBF, ISZ028N03LF2SATMA1 delivers superior power density via its FL-packaged exposed drain, lowest R_DS(on) × Q_g FoM, and validated 175 °C operation-making it optimal for space-constrained, high-frequency, high-current DC-DC stages.

Availability

ISZ028N03LF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for ISZ028N03LF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the StrongIRFET™ 2 family-engineered specifically for high-efficiency, high-current, low-voltage power conversion in datacenter, industrial, and e-mobility applications.

FAQ

What is the maximum allowable case temperature for continuous 128 A operation?

The datasheet specifies 128 A continuous drain current at T_C = 25 °C with a 40 mm × 40 mm × 1.5 mm FR4 PCB and 6 cm² copper area. At T_C = 100 °C, derating reduces I_D to 90 A. Full 128 A requires active cooling or ambient ≤40 °C with adequate copper thermal mass.

Does ISZ028N03LF2SATMA1 support gate drive from a 3.3 V microcontroller directly?

Yes-its V_GS(th) range (1.35–2.35 V) and logic-level design ensure turn-on at 3.3 V. However, full R_DS(on) optimization requires ≥4.5 V; for 2.8 mΩ performance, a 5 V gate driver or level shifter is recommended in high-current applications.

How is the "FL" suffix in PG-TSDSON-8 FL physically implemented?

The "FL" denotes "flat lead" construction: pins 5–8 form a single exposed copper drain pad on the bottom surface, while gate (pin 4) and source (pins 1–3) are accessible on the top side. This enables simultaneous top-side signal routing and bottom-side thermal coupling to PCB copper or heatsinks.

Is the body diode suitable for reverse conduction in bidirectional topologies?

Yes-the diode is 100% avalanche tested and characterized with t_rr = 15 ns and Q_rr = 31 nC. It supports controlled reverse recovery in DAB and LLC resonant converters, but synchronous gate control is required to avoid hard commutation losses above 100 kHz.

ISZ028N03LF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 128A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8 FL

ISZ028N03LF2SATMA1 FAQ

1.How can I place an order for ISZ028N03LF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ028N03LF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ028N03LF2SATMA1 reliable?

The price and inventory of ISZ028N03LF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ028N03LF2SATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ028N03LF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ028N03LF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ028N03LF2SATMA1?

ISZ028N03LF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ028N03LF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ028N03LF2SATMA1?

For technical support, including ISZ028N03LF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ028N03LF2SATMA1 requirements.

6.How does Aetrix verify that ISZ028N03LF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ028N03LF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ028N03LF2SATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ028N03LF2SATMA1?

All ISZ028N03LF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ028N03LF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ028N03LF2SATMA1 part is unused and in its original packaging.

Return procedure for ISZ028N03LF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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