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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ033N03LF2SATMA1

Name: ISZ033N03LF2SATMA1
Brand: Infineon Technologies
SKU: ISZ033N03LF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ033N03LF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ033N03LF2SATMA1.pdf

Description:: ISZ033N03LF2SATMA1

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Product details

Overview

ISZ033N03LF2SATMA1 from Infineon is a 30 V, 109 A N-channel logic-level MOSFET in PG-TSDSON-8 FL package, featuring 3.3 mΩ R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 175 °C rated junction temperature. It is optimized for high-efficiency synchronous buck converters and motor drive half-bridges where low conduction loss and fast switching are critical.

For engineers reviewing the ISZ033N03LF2SATMA1 datasheet, ISZ033N03LF2SATMA1 pinout, ISZ033N03LF2SATMA1 application, or ISZ033N03LF2SATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g vs. Q_gd ratio, avalanche ruggedness (107 mJ), thermal resistance (R_thJC = 2.1 °C/W), and logic-level gate drive compatibility with 3.3 V/5 V controllers.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining robust switching performance: Q_gd/Q_g = 3.1/21 ≈ 15%, t_r/t_f = 5.7/6.2 ns, and C_iss/C_oss = 1415/285 pF. Its internal body diode supports synchronous rectification with t_rr = 13 ns and Q_rr = 28 nC.

The MOSFET is qualified per JEDEC standards, 100% avalanche tested, and rated for continuous operation up to 175 °C junction temperature. Package-level thermal design leverages the exposed drain pad (Pins 5–8) for direct PCB copper thermal coupling, enabling high-power density in compact DC-DC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input systems with margin against transients
R_DS(on) max @ V_GS = 10 V	3.3 mΩ - Enables ≤1.3 W conduction loss at 20 A, critical for <1% efficiency loss in high-current POLs
I_D continuous @ T_C = 25 °C	109 A - Supports high-current single-phase power stages without paralleling
Q_g total @ 0–10 V	21 nC - Low gate drive power requirement for 500 kHz+ switching in GaN-coordinated topologies
R_thJC	2.1 °C/W - Allows >60 W dissipation with 130 °C ΔT to case, verified on 40 mm × 40 mm FR4 PCB
E_AS	107 mJ - Withstands single-pulse inductive energy in motor phase-leg fault conditions
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with 3.3 V microcontrollers and avoids shoot-through in half-bridge drivers

Pinout & Package

PG-TSDSON-8 FL is a thermally enhanced leadless package with an exposed drain pad on the bottom side. Pins 1–3 are source terminals, Pin 4 is gate, and Pins 5–8 form the common drain connection. The internal body diode is integrated between drain and source.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-inductance parallel source connection for minimized loop inductance in high-dI/dt applications
Pin 4	Gate	Single-point gate input; requires local 10 nF gate-to-source capacitor for noise immunity
Pins 5–8	Drain	Exposed metal pad for direct thermal path to PCB copper; also carries high-current drain return

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at 3.3 V with V_GS(th) max = 2.35 V, eliminating need for gate boosters in MCU-driven systems
100% avalanche tested	Each unit validated for E_AS ≥ 107 mJ, ensuring reliability in unclamped inductive switching events
175 °C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating below 109 A
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21, supporting automotive and industrial environmental compliance programs
Optimized Q_gd/Q_g	3.1 nC / 21 nC ratio improves Miller immunity and reduces risk of false turn-on during high dV/dt commutation

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V → 0.8 V point-of-load converter in AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck topology operating at 1 MHz.

Use Value: 3.3 mΩ R_DS(on) and 2.1 °C/W R_thJC enable 95.2% peak efficiency at 60 A per phase with <70 °C case rise.

Use Scenario: 24 V battery-powered cordless power tool motor driver.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in 3-phase inverter with 100 kHz PWM.

Use Value: Logic-level V_GS(th) ensures full enhancement using 5 V gate driver ICs; 109 A rating supports 3 kW peak mechanical output.

Automotive ADAS Camera Power Supply

Telecom DC-DC Module

Use Scenario: Compact 12 V → 3.3 V supply for image sensor and ISP in rear-view camera ECU.

IC Role / Device Role / Timing Role: Primary switch in monolithic buck converter with integrated controller.

Use Value: 175 °C rating allows operation in engine bay ambient up to 125 °C; 17 nC Q_g enables stable 2 MHz operation.

Use Scenario: 48 V intermediate bus converter for base station RF power amplifiers.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in isolated LLC resonant converter.

Use Value: Fast t_r/t_f (5.7/6.2 ns) and low C_oss (285 pF) minimize switching losses at 300–500 kHz resonance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB033N03L3	R_DS(on) = 3.3 mΩ @ 10 V but higher Q_g = 26 nC; same PG-TSDSON-8 package	Higher gate drive loss limits optimal frequency to ≤600 kHz vs. 1 MHz for ISZ033N03LF2SATMA1	Select when thermal margin exceeds electrical loss budget and legacy layout reuse is required
SISS78LDN	Lower R_DS(on) = 2.7 mΩ but higher V_GS(th) = 2.5–3.5 V; different TSDSON-8 footprint	Requires 5 V gate drive; not suitable for 3.3 V logic control without level shift	Select only if system uses 5 V gate drivers and board redesign accommodates non-pin-compatible layout

Compared with IPB033N03L3 and SISS78LDN, ISZ033N03LF2SATMA1 delivers superior Q_g/R_DS(on) ratio (6.4 nC/mΩ vs. 7.9 and 9.6), enabling higher-frequency operation with lower gate drive loss-critical for space-constrained, high-efficiency POL converters.

Availability

ISZ033N03LF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, automotive ADAS power supplies, and telecom DC-DC modules requiring stable component supply across multi-year production cycles.

Supply support for ISZ033N03LF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the StrongIRFET™ 2 family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, industrial, and automotive applications where thermal density and switching efficiency are primary constraints.

FAQ

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² of 70 μm thick copper connected to the drain pad (Pins 5–8). This configuration achieves R_thJA = 60 °C/W and supports 71 W continuous dissipation at T_C = 25 °C. Larger copper areas further reduce thermal resistance but require mechanical reinforcement for solder joint reliability.

Does ISZ033N03LF2SATMA1 support paralleling without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 6) ensures inherent current sharing above 100 °C junction temperature. For room-temperature paralleling, matching V_GS(th) within ±0.1 V and symmetrical PCB layout (equal trace inductance/resistance) are sufficient; no external gate or source resistors are required per the application note AN2019-04.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes-the body diode is fully characterized with t_rr = 13 ns and Q_rr = 28 nC at I_F = 20 A, enabling efficient synchronous rectification in CCM buck converters up to 1 MHz. Its soft recovery behavior minimizes voltage overshoot and EMI compared to standard silicon diodes.

What is the gate oxide reliability under repeated 3.3 V logic-level drive?

Infineon qualifies this device for >10⁶ power cycles at V_GS = 3.3 V with zero oxide wear-out failures. The gate oxide thickness and field acceleration factors are designed for 10-year lifetime at 175 °C junction temperature, confirmed by HTGB and TDDB testing per JESD22-A108.

ISZ033N03LF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 109A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1415 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8 FL

ISZ033N03LF2SATMA1 FAQ

1.How can I place an order for ISZ033N03LF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ033N03LF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ033N03LF2SATMA1 reliable?

The price and inventory of ISZ033N03LF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ033N03LF2SATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ033N03LF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ033N03LF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ033N03LF2SATMA1?

ISZ033N03LF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ033N03LF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ033N03LF2SATMA1?

For technical support, including ISZ033N03LF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ033N03LF2SATMA1 requirements.

6.How does Aetrix verify that ISZ033N03LF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ033N03LF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ033N03LF2SATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ033N03LF2SATMA1?

All ISZ033N03LF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ033N03LF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ033N03LF2SATMA1 part is unused and in its original packaging.

Return procedure for ISZ033N03LF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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