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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ0501NLSATMA1

Name: ISZ0501NLSATMA1
Brand: Infineon Technologies
SKU: ISZ0501NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ0501NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ0501NLSATMA1.pdf

Description:: 25V, N-CH MOSFET, LOGIC LEVEL, P

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISZ0501NLSATMA1 from Infineon Technologies is an N-channel OptiMOSTM 5 Power-MOSFET rated for 25 V V_DS, with R_DS(on) = 3.1 mΩ @ V_GS = 4.5 V, Q_G = 6.3 nC (0–4.5 V), and Q_OSS = 9.1 nC - optimized for high-frequency synchronous buck converters in USB PD and fast-charging applications.

For engineers reviewing the ISZ0501NLSATMA1 datasheet, ISZ0501NLSATMA1 pinout, ISZ0501NLSATMA1 application, or ISZ0501NLSATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), 100% avalanche ruggedness, thermal performance on FR4 PCBs, and compatibility with 4.5 V logic-level gate drive in compact power stages.

Technical Context

This MOSFET employs trench-gate superjunction technology to achieve ultra-low R_DS(on) and minimized switching losses at high frequencies. Its gate charge profile supports efficient zero-voltage switching (ZVS) in synchronous rectification and high-side/low-side configurations.

The device integrates a robust body diode with Q_rr = 12 nC and V_SD = 0.82 V @ I_F = 20 A, enabling reliable reverse recovery in hard-switched and resonant topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - maximum drain-source blocking voltage for 5 V–12 V input DC-DC stages
R_DS(on) max	3.1 mΩ @ V_GS = 4.5 V - enables ≤1.25 W conduction loss at 20 A continuous drain current
Q_G (0–4.5 V)	6.3 nC - supports <10 ns turn-on delay with 1.6 Ω gate resistor, critical for >1 MHz SMPS
Q_OSS	9.1 nC - determines output energy loss during hard switching; enables low-voltage overshoot in buck sync-FET operation
I_D continuous	40 A @ T_C = 25 °C - delivers high current density in thermally constrained 5 mm × 6 mm footprint
R_thJC	4.1 K/W - allows direct heatsinking via drain pad; enables 30 W power dissipation at ΔT = 123 K
Avalanche energy E_AS	20 mJ - withstands single-pulse inductive energy spikes in unregulated input conditions

Pinout & Package

PG-TSDSON-8 FL package with exposed drain pad (Pins 5–8), gate on Pin 4, and source on Pins 1–3. Thermal pad soldered to PCB ground plane for optimal junction-to-board heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-impedance return path for load current; tied to system ground or low-side switch node
Pin 4	Gate	Control terminal requiring <6.3 nC charge for full enhancement; sensitive to ringing due to low C_iss/C_rss ratio
Pins 5–8 + thermal pad	Drain	Main power path and primary thermal interface; must be connected to high-current trace and thermal copper pour

Key Features

Feature	Design Value
Optimized FOM_QOSS	9.1 nC output charge at 12 V - reduces turn-off loss in high-frequency synchronous rectifiers
Low R_DS(on) × Q_G	3.1 mΩ × 6.3 nC = 19.5 mΩ·nC - benchmark efficiency metric for 4.5 V drive in USB-C PD designs
100% avalanche tested	Rated for 20 A single-pulse I_AS and 20 mJ E_AS - ensures reliability under transient overvoltage events
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - meets environmental compliance for global OEMs

Applications

USB-C Fast Charging Adapter

Server VRM High-Side Switch

Use Scenario: 20–100 W AC-DC adapter with synchronous rectification and programmable voltage/current control.

IC Role / Device Role: Low-side synchronous rectifier FET in secondary-side LLC or QR flyback topology.

Use Value: 3.1 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 5 mΩ devices, enabling >94% peak efficiency at 45 W.

Use Scenario: 48 V to 12 V intermediate bus converter in AI accelerator rack power supplies.

IC Role / Device Role: High-side switch in multiphase buck converter with 500 kHz–1 MHz switching.

Use Value: 6.3 nC Q_G (0–4.5 V) enables gate drive with minimal Miller plateau time, reducing dead-time loss and improving phase current balance.

Automotive USB PD Hub

Industrial PoE++ PSE Controller

Use Scenario: In-vehicle dual-port USB-C hub supporting 60 W delivery with thermal derating across -40 °C to +105 °C ambient.

IC Role / Device Role: Input protection and OR-ing FET in 12 V–24 V automotive supply path.

Use Value: 150 °C T_j rating and 4.1 K/W R_thJC allow sustained 30 A operation without active cooling in confined dashboard enclosures.

Use Scenario: IEEE 802.3bt Type 4 (90 W) Power Sourcing Equipment with four-pair power injection and fault current limiting.

IC Role / Device Role: Hot-swap MOSFET in DC feed path between DC-DC stage and Ethernet magnetics.

Use Value: 20 mJ E_AS withstands cable short-circuit transients up to 100 A peak, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	R_DS(on) = 2.7 mΩ @ 4.5 V, Q_G = 11.5 nC, PG-TSDSON-8 FL package	Higher gate charge increases switching loss above 600 kHz; better suited for lower-frequency industrial SMPS	Select when lowest conduction loss dominates over switching frequency; verify gate driver slew rate capability.
DMTH6005LPSQ-13	R_DS(on) = 4.5 mΩ @ 4.5 V, Q_G = 5.8 nC, PowerDI5060 package (larger footprint)	Larger thermal resistance (R_thJA = 75 K/W) limits power density; requires more PCB area for same thermal margin	Prefer where board space permits larger package and cost sensitivity outweighs efficiency targets.

Compared with STL220N4LF8AG and DMTH6005LPSQ-13, ISZ0501NLSATMA1 delivers the best balance of low R_DS(on), low Q_G, and industry-standard TSDSON-8 thermal performance - making it optimal for space-constrained, high-efficiency USB PD and server VRM designs.

Availability

ISZ0501NLSATMA1 is available at Aetrix Electronics and suitable for USB-C fast charging adapters, server VRMs, and automotive infotainment power systems requiring stable component supply and JEDEC-qualified ruggedness.

Supply support for ISZ0501NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-efficiency DC-DC conversion in consumer, computing, and automotive power supplies where logic-level drive and thermal density are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISZ0501NLSATMA1 supports 40 A continuous drain current at T_C = 25 °C, derating to 19 A at T_C = 100 °C per Table 2 of the datasheet. This reflects thermal limitation of the PG-TSDSON-8 FL package's 4.1 K/W R_thJC, not device degradation.

Does this MOSFET require a gate resistor for stability in 1 MHz switching?

Yes - a 1.6 Ω external gate resistor is specified in the datasheet for dynamic characterization (Table 5). It suppresses gate oscillation caused by low C_iss/C_rss ratio and parasitic inductance, ensuring clean 3 ns rise time and controlled 15 ns turn-off delay.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes - the integrated body diode has V_SD = 0.82 V @ 20 A and Q_rr = 12 nC, verified in Table 7. Its soft recovery and low forward drop enable reliable synchronous rectification in buck and flyback topologies up to 500 kHz without supplemental diodes.

Can ISZ0501NLSATMA1 replace older OptiMOSTM 4 devices in existing layouts?

Yes - it uses identical PG-TSDSON-8 FL footprint and pinout, with improved R_DS(on) (−22%) and Q_G (−18%) versus ISZ0501NLS (Rev. 1.x). No PCB change is needed, but gate drive timing may require minor optimization due to faster switching.

ISZ0501NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.6 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 910 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-25

ISZ0501NLSATMA1 FAQ

1.How can I place an order for ISZ0501NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ0501NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ0501NLSATMA1 reliable?

The price and inventory of ISZ0501NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ0501NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ0501NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ0501NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ0501NLSATMA1?

ISZ0501NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ0501NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ0501NLSATMA1?

For technical support, including ISZ0501NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ0501NLSATMA1 requirements.

6.How does Aetrix verify that ISZ0501NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ0501NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ0501NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ0501NLSATMA1?

All ISZ0501NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ0501NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ0501NLSATMA1 part is unused and in its original packaging.

Return procedure for ISZ0501NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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