Infineon Technologies ISZ0803NLSATMA1

Overview

ISZ0803NLSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET in PG-TSDSON-8 FL package, rated for 100 V V_DS, 37 A continuous drain current at T_C = 25 °C, and 16.9 mΩ R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, low Q_g (6 nC at 4.5 V), and optimized gate charge for high-frequency synchronous buck converters in USB PD chargers.

For engineers reviewing the ISZ0803NLSATMA1 datasheet, ISZ0803NLSATMA1 pinout, ISZ0803NLSATMA1 application, or ISZ0803NLSATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 16 nC Q_oss for reduced switching loss, thermal resistance of 1.7 °C/W (junction-to-case, bottom), and internal body diode with 31 ns t_rr for hard-switched topologies.

Technical Context

This OptiMOSTM5 power transistor employs a trench-based silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FoM) in high-duty-cycle DC-DC stages. Its gate plateau voltage is 3.3 V, enabling stable turn-on under 4.5 V supply rails, and it supports unidirectional synchronous rectification with 0.89 V typical V_SD at 20 A.

The device integrates an internal body diode with 25 nC Q_rr and 31 ns t_rr, validated for operation in continuous conduction mode (CCM) flyback and buck converters. Thermal design leverages the exposed drain pad (Pins 5–8) for direct PCB copper thermal coupling, achieving 1.7 °C/W R_thJC to the bottom surface.

Key Specifications

Pinout & Package

ISZ0803NLSATMA1 uses the PG-TSDSON-8 FL package - a 3.3 mm × 3.3 mm, 0.55 mm height leadless package with an exposed drain pad on the bottom side for thermal and electrical connection. Pins 5–8 are internally shorted to the drain terminal; Pin 4 is gate; Pins 1–3 are source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPB80N04S4-02 and IRL8721PBF, ISZ0803NLSATMA1 uniquely balances 100 V capability, 4.5 V logic compatibility, and 3.3 × 3.3 mm footprint-enabling compact, high-efficiency designs in space-constrained USB PD and industrial adapters where voltage margin and thermal performance are co-critical.

Availability

ISZ0803NLSATMA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, server VRMs, industrial AC-DC adapters, and automotive DC-DC converters requiring stable component supply and qualified automotive-grade reliability.

Supply support for ISZ0803NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and qualification to AEC-Q101 and JEDEC standards.

This device belongs to the OptiMOSTM5 family-designed specifically for high-frequency, high-efficiency power conversion in consumer chargers, industrial SMPS, and computing VRMs where low R_DS(on) × Q_g FoM and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 23 A, as specified in Table 2 of the datasheet under "Continuous drain current" with V_GS = 10 V. This derating reflects thermal limitations of the PG-TSDSON-8 FL package and must be applied when ambient or board layout restricts heat dissipation.

Can ISZ0803NLSATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (shown in Diagram 9) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling between devices to maintain <5 °C junction temperature delta across units.

Is the internal body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has characterized t_rr = 31 ns and Q_rr = 25 nC at 20 A, making it suitable for synchronous rectification in CCM buck and flyback converters up to 500 kHz. For ZVS operation, pairing with a controller featuring adaptive dead-time control is recommended.

Does this MOSFET require a gate resistor for EMI suppression?

A gate resistor of 3–10 Ω is recommended to dampen ringing caused by parasitic L_g–C_iss resonance, especially above 300 kHz. The device's 1.0 Ω typical R_G (Table 4) provides baseline damping, but external resistance improves EMI compliance and reduces gate driver stress in high-noise environments.