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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ0901NLSATMA1

Name: ISZ0901NLSATMA1
Brand: Infineon Technologies
SKU: ISZ0901NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ0901NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ0901NLSATMA1.pdf

Description:: 25V, N-CH MOSFET, LOGIC LEVEL, P

Quantity:: RFQ Add To RFQ list

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Inventory:8,301

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Product details

Overview

ISZ0901NLSATMA1 from Infineon Technologies is an N-channel OptiMOS™ Power-MOSFET rated for 25 V drain-source voltage, with R_DS(on) of 6 mΩ at V_GS=10 V and 8.1 mΩ at V_GS=4.5 V, delivering 40 A continuous drain current at T_C=25 °C. It is optimized for high-frequency SMPS in USB PD and fast-charger topologies, featuring low gate charge (Q_g=9.1 nC), 100% avalanche tested ruggedness, and TSDSON-8 FL surface-mount package.

For engineers reviewing the ISZ0901NLSATMA1 datasheet, ISZ0901NLSATMA1 pinout, ISZ0901NLSATMA1 application, or ISZ0901NLSATMA1 equivalent, key selection criteria include its FOM_QOSS and FOM_SW optimization, thermal resistance (R_thJC=4.9 K/W), and 4.5 V logic-level gate drive compatibility in compact charger power stages.

Technical Context

This MOSFET employs trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit, enabling high-efficiency synchronous rectification and primary-side switching in 25 V input DC-DC converters. Its gate plateau voltage of 2.9 V ensures stable turn-on under varying drive conditions.

The device integrates a robust body diode with Q_rr=5 nC and V_SD=0.87 V at 20 A, supporting hard-switched and resonant topologies. Thermal design is facilitated by low junction-to-case resistance (4.9 K/W) and validated JEDEC qualification for industrial reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 24 V rail and USB PD 3.0 input stage applications
R_DS(on) @ V_GS=10 V	6 mΩ - Enables <1.5 W conduction loss at 20 A in high-current synchronous buck phases
R_DS(on) @ V_GS=4.5 V	8.1 mΩ - Supports direct drive from 3.3 V/5 V controllers without level-shifting
Q_g	9.1 nC - Reduces gate drive power and enables >1 MHz switching in compact chargers
R_thJC	4.9 K/W - Allows 26 W power dissipation with minimal heatsink on PCB copper area
I_D, continuous	40 A @ T_C=25 °C - Sustains peak load currents in multi-port 65 W+ USB-C adapters
Q_rr	5 nC - Minimizes reverse recovery loss and EMI in secondary-side synchronous rectifiers

Pinout & Package

ISZ0901NLSATMA1 uses the PG-TSDSON-8 FL (Thin Small Outline No-Lead, 8-pin, exposed drain pad) package, with 0.65 mm pitch and thermally enhanced bottom-side copper pad for efficient heat transfer to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to exposed thermal pad; carries main current path and serves as primary heat sink interface
8	Source (S)	Reference node for gate drive; tied to power ground in half-bridge or buck configurations
G	Gate (G)	Control terminal accepting 0–10 V logic-level signals; low C_iss (670 pF) eases high-speed switching

Key Features

Feature	Design Value
Optimized FOM_QOSS	Enables >95% efficiency in 1 MHz+ QR flyback and active clamp forward converters
Low R_DS(on) @ 4.5 V	Eliminates need for gate driver ICs in cost-sensitive 5 V microcontroller-based charger designs
100% avalanche tested	Guarantees survivability during transient overvoltage events in unregulated input stages
Halogen-free & RoHS compliant	Meets IPC-1752A material declaration requirements for global electronics manufacturing

Applications

USB PD Fast Charger Primary Switch

High-Density AC-DC Adapter Sync Rectifier

Use Scenario: 65 W dual-port USB-C adapter using active-clamp flyback topology with 25 V input rail.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz–1 MHz with zero-voltage switching.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling 14 mm × 14 mm board footprint.

Use Scenario: Secondary-side synchronous rectification in 24 V output industrial AC-DC power supply.

IC Role / Device Role / Timing Role: Low-side rectifier controlled by dedicated SR controller with adaptive timing.

Use Value: 0.87 V V_SD and 5 nC Q_rr cut diode conduction loss by 40% vs. Schottky alternatives.

Automotive USB-C In-Car Charger

Server VR13 Point-of-Load High-Current Phase

Use Scenario: 45 W automotive-grade in-dash charger operating across -40 °C to +105 °C ambient.

IC Role / Device Role / Timing Role: Input-stage switch handling 12–24 V battery transients with integrated avalanche ruggedness.

Use Value: JEDEC-qualified operation and 150 °C T_j rating ensure reliability under engine-bay thermal stress.

Use Scenario: 30 A, 0.8 V output VRM phase in AI accelerator server motherboard.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage in multiphase buck converter with 300 kHz–1 MHz PWM.

Use Value: 6 mΩ R_DS(on) at 10 V and 4.9 K/W R_thJC enable <1.2 °C/W thermal rise per phase at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N03LG	R_DS(on)=7.0 mΩ @ 10 V; Q_g=12.5 nC; same TSDSON-8 FL package	Slightly higher conduction loss but improved SOA for pulsed loads	Prefer when higher I_D,pulse (180 A) is required over switching speed
SI7157DP-T1-GE3	R_DS(on)=7.5 mΩ @ 10 V; Q_g=10.5 nC; different SO-8 package with higher R_thJA	Less effective thermal performance due to non-exposed-drain SO-8 construction	Select only if legacy SO-8 footprint compatibility outweighs thermal penalty

Compared with IPB070N03LG and SI7157DP-T1-GE3, ISZ0901NLSATMA1 delivers the lowest combined R_DS(on) × Q_g FOM and best thermal resistance, making it optimal for space-constrained, high-frequency charger and adapter designs where board area and efficiency are critical.

Availability

ISZ0901NLSATMA1 is available at Aetrix Electronics and suitable for USB PD fast chargers, high-density AC-DC adapters, and automotive in-car power supplies requiring stable component supply and qualified industrial-grade MOSFETs.

Supply support for ISZ0901NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency power conversion in consumer and industrial charging systems where low gate charge and logic-level drive are essential.

FAQ

What is the maximum junction temperature rating for ISZ0901NLSATMA1?

The device is rated for continuous operation up to 150 °C junction temperature, validated per JEDEC JESD22-A108 and supported by thermal characterization data showing R_thJC = 4.9 K/W. This allows reliable use in sealed enclosures or high-ambient environments such as automotive dashboards and industrial power supplies.

Does ISZ0901NLSATMA1 require a gate resistor for typical 1 MHz switching?

Yes - a 1.6 Ω external gate resistor is specified in the datasheet for standard switching time measurements (e.g., t_d(on) = 2.5 ns). This value balances EMI suppression and switching speed; lower values (<1 Ω) may increase ringing, while higher values (>5 Ω) degrade efficiency in high-frequency SMPS.

Can ISZ0901NLSATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (shown in Diagram 9) ensures inherent current sharing stability. Parallel operation requires matched layout symmetry, individual gate resistors, and thermal coupling via shared copper pour to maintain balanced channel conduction across devices.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is characterized with Q_rr = 5 nC and t_rr < 30 ns under standard test conditions (V_R=15 V, dI/dt=400 A/µs), making it suitable for synchronous rectification in flyback and LLC converters up to 1 MHz, provided controller timing accounts for its soft recovery behavior.

ISZ0901NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 26W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-25

ISZ0901NLSATMA1 FAQ

1.How can I place an order for ISZ0901NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ0901NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ0901NLSATMA1 reliable?

The price and inventory of ISZ0901NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ0901NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ0901NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ0901NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ0901NLSATMA1?

ISZ0901NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ0901NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ0901NLSATMA1?

For technical support, including ISZ0901NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ0901NLSATMA1 requirements.

6.How does Aetrix verify that ISZ0901NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ0901NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ0901NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ0901NLSATMA1?

All ISZ0901NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ0901NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ0901NLSATMA1 part is unused and in its original packaging.

Return procedure for ISZ0901NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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