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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IWM013N06NM5XUMA1

Name: IWM013N06NM5XUMA1
Brand: Infineon Technologies
SKU: IWM013N06NM5XUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IWM013N06NM5XUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IWM013N06NM5XUMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IWM013N06NM5XUMA1 from Infineon Technologies is a 60 V, 1.3 mΩ, 200 A discrete N-channel enhancement-mode MOSFET in PG-HSOF-8 package, optimized for high-efficiency synchronous rectification in server and telecom DC-DC converters.

For engineers reviewing the IWM013N06NM5XUMA1 datasheet, IWM013N06NM5XUMA1 pinout, IWM013N06NM5XUMA1 application, or IWM013N06NM5XUMA1 equivalent, key selection criteria include R_DS(on) at 10 V, peak pulsed drain current rating, thermal resistance (R_thJC), gate charge (Q_G), and SOA compliance under hard-switching conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling ultra-low conduction losses and fast switching transitions. It supports unidirectional current flow with source-connected body diode and is rated for continuous operation up to T_J = 175 °C.

The device features integrated ESD protection (HBM Class 2), specified gate threshold voltage (V_GS(th)) of 2.2–3.2 V, and guaranteed avalanche energy rating (E_AS) of 420 mJ at T_J = 25 °C - critical for robustness in power supply transient events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche breakdown; suitable for 48 V input bus architectures
R_DS(on) @ V_GS = 10 V	1.3 mΩ - enables <1 W conduction loss at 200 A DC, reducing heatsink requirements
I_D (continuous)	200 A - rated drain current at T_C = 25 °C; derates to ~120 A at T_C = 100 °C
Q_G	105 nC - total gate charge determines driver strength requirement and switching loss trade-off
R_thJC	0.29 K/W - junction-to-case thermal resistance enables high-power density layout with direct heatsink mounting
E_AS	420 mJ - single-pulse avalanche energy rating ensures reliability during output short-circuit or inductive load turn-off

Pinout & Package

Package: PG-HSOF-8 - thermally enhanced 8-pin exposed-pad surface-mount package with dual-side cooling capability and optimized copper clip interconnects for low parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (D)	Internally paralleled drain terminals connected to exposed metal pad; primary current path and thermal interface
7	Source (S)	Main source connection; used as reference node for gate drive and current sensing
8	Gate (G)	Control terminal requiring 10 V nominal drive; Miller plateau region starts at ~3.5 V

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.3 mΩ at 10 V enables <0.5% conduction loss in 48 V → 12 V buck converters at 100 A output
Optimized Q_G/R_DS(on) ratio	105 nC / 1.3 mΩ = 80.8 - balances switching speed and gate drive loss for 300–1000 kHz operation
175 °C T_J rating	Supports compact thermal design in sealed server chassis without forced airflow derating
Qualified per JEDEC JESD47	Validated for 1000-cycle temperature cycling (-55 °C to +150 °C) and 1000 h HTRB at 175 °C

Applications

Server VRM Output Stage

Telecom 48 V DC-DC Converter

Use Scenario: High-current point-of-load regulation in dual-processor rack servers with >600 A total output demand.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; operates in continuous conduction mode with 500 kHz switching frequency.

Use Value: Reduces conduction loss by 35% vs. legacy 2.2 mΩ devices, lowering VRM temperature rise by 12 °C at full load.

Use Scenario: Isolated forward converter secondary-side rectification in 48 V telecom power shelves delivering 100 A at 12 V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal; handles bidirectional current during dead-time.

Use Value: Enables >96.2% peak efficiency at 75% load due to sub-1.5 mΩ on-resistance and <15 ns turn-off delay.

Industrial PLC Power Module

AI Accelerator Board Power Delivery

Use Scenario: Compact 24 V input, 3.3 V/50 A output module for programmable logic controller backplanes.

IC Role / Device Role / Timing Role: High-side switch in buck-boost topology; controlled via isolated gate driver with 15 V gate drive.

Use Value: Withstands repetitive 100 A surge currents during motor startup while maintaining <1.8 W dissipation at steady state.

Use Scenario: Multi-phase 0.8 V/600 A GPU core supply on AI training accelerator cards.

IC Role / Device Role / Timing Role: Bottom-FET in interleaved buck stages; synchronized to 1 MHz PWM with adaptive dead-time control.

Use Value: Achieves <0.25 mΩ effective parallel R_DS(on) when used in 4-phase configuration, minimizing voltage droop during 200 A/µs transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current synchronous rectification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_G = 71 nC; TO-220AB package	Limited to ≤60 A continuous; requires larger heatsink and cannot support >300 kHz switching	Select only for cost-sensitive, low-frequency (<100 kHz), low-current (<50 A) designs where thermal margin is abundant.
STL220N6F7AG	R_DS(on) = 1.4 mΩ @ 10 V; Q_G = 110 nC; PowerFLAT 8x8 HV package	Higher R_thJC (0.45 K/W); no avalanche rating; not qualified for automotive AEC-Q101	Acceptable for telecom DC-DC where avalanche immunity is not required and board space allows larger footprint.

Compared with IRL1404ZPBF and STL220N6F7AG, IWM013N06NM5XUMA1 delivers superior power density (200 A in HSOF-8), guaranteed avalanche ruggedness, and lower thermal resistance - making it the preferred choice for high-reliability, high-frequency server and AI power delivery systems.

Availability

IWM013N06NM5XUMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and AI accelerator board power delivery requiring stable component supply across multi-year production cycles.

Supply support for IWM013N06NM5XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 discrete power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and AI infrastructure applications.

FAQ

What is the maximum allowable gate-source voltage for IWM013N06NM5XUMA1?

The absolute maximum V_GS rating is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +10 V to +12 V for optimal R_DS(on) and safe switching margins, with negative turn-off bias (–5 V) advised in high-dv/dt environments to prevent spurious turn-on.

Does IWM013N06NM5XUMA1 require a gate resistor for reliable operation?

Yes - a gate resistor (typically 2.2–4.7 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Without it, overshoot exceeding 15 V or oscillation near 100 MHz may trigger false turn-on or increase EMI. Layout-dependent parasitics make empirical tuning essential.

Can IWM013N06NM5XUMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. For two devices in parallel, ensure matched gate drive loop inductance (<10 nH difference), symmetrical PCB copper weight, and thermal coupling via shared heatsink. Derate total current by 15% to account for dynamic imbalance at >500 kHz.

Is the PG-HSOF-8 package lead-free and RoHS-compliant?

Yes - IWM013N06NM5XUMA1 complies with RoHS Directive 2011/65/EU and EU REACH Regulation (SVHC-free). The "X" in the OPN suffix confirms halogen-free and totally lead-free construction, with matte tin (Sn) plating on all terminations and Pb-free solder compatibility up to 260 °C peak reflow.

IWM013N06NM5XUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IWM013N06NM5XUMA1 FAQ

1.How can I place an order for IWM013N06NM5XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IWM013N06NM5XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IWM013N06NM5XUMA1 reliable?

The price and inventory of IWM013N06NM5XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IWM013N06NM5XUMA1 is usually 5 days.

3.What payment methods are accepted for IWM013N06NM5XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IWM013N06NM5XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IWM013N06NM5XUMA1?

IWM013N06NM5XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IWM013N06NM5XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IWM013N06NM5XUMA1?

For technical support, including IWM013N06NM5XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IWM013N06NM5XUMA1 requirements.

6.How does Aetrix verify that IWM013N06NM5XUMA1 is sourced from the original manufacturer or authorized distributors?

All IWM013N06NM5XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IWM013N06NM5XUMA1 meets industry standards.

7.What is the process for return or replacement of IWM013N06NM5XUMA1?

All IWM013N06NM5XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IWM013N06NM5XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IWM013N06NM5XUMA1 part is unused and in its original packaging.

Return procedure for IWM013N06NM5XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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