My Inquiry
My Account
Microchip Technology JAN1N3612/TR
- Part No.:
- JAN1N3612/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- A, Axial
- Datasheet:
-
JAN1N3612/TR.pdf
- Description:
- DIODE GEN PURP 400V 1A
- Quantity:
- Payment:
- Shipping:
Inventory:9,614
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N3612/TR from Microsemi is a military-qualified standard recovery axial-lead glass rectifier diode rated for 400 V working peak reverse voltage, 1.0 A average forward current at 100°C, and 30 A surge current; it features voidless hermetic glass packaging with Category I metallurgical bond and is used in high-reliability power supply rectification, snubber circuits, and DC-DC converter catch diodes.
For engineers reviewing the JAN1N3612/TR datasheet, JAN1N3612/TR pinout, JAN1N3612/TR application, or JAN1N3612/TR equivalent, key selection criteria include its MIL-PRF-19500/228 qualification, -65°C to +175°C operating temperature range, 1.1 V max forward voltage at 1 A, 300 μA max reverse leakage at 400 V, and robust axial-glass mechanical construction for radiation-hardened and mission-critical systems.
Technical Context
This diode operates as a unidirectional current-conducting device with controlled avalanche capability and low thermal resistance (38°C/W junction-to-lead). Its standard recovery time supports line-frequency and moderate-switching applications where fast switching is not required but ruggedness and reliability are paramount.
The device uses tungsten slugs and Sn/Pb-plated copper axial leads within a voidless hard-glass case, enabling stable performance under thermal cycling, mechanical shock, and ionizing radiation-verified per MicroNote 050. Polarity is marked by a cathode band on the glass body.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 400 V - maximum continuous reverse-bias voltage before breakdown under full temperature range |
| Min Breakdown Voltage | 480 V @ 100 μA - ensures margin above VRWM for reliable blocking in transient overvoltage conditions |
| Avg Forward Current | 1.0 A @ TA = 100°C - usable DC conduction capacity with linear derating to 0.3 A at 150°C |
| Max Forward Voltage | 1.1 V @ 1 A pulsed - defines conduction loss and thermal dissipation during normal operation |
| Max Reverse Leakage | 300 μA @ VRWM = 400 V - low leakage preserves efficiency in high-impedance bias networks |
| Surge Current | 30 A @ 8.3 ms half-sine - withstands inrush and fault currents without failure |
| Junction Temp Range | -65°C to +175°C - enables deployment in aerospace, downhole, and military environmental extremes |
Pinout & Package
Package: Axial-lead, voidless hermetically sealed hard glass case with tungsten slugs; cathode identified by painted band; lead finish: Sn/Pb; weight ≈ 500 mg; dimensions per T4-LDS-0190 Rev. 1 (BD: 0.060–0.110", BL: 0.125–0.205", LD: 0.025–0.034", LL: 0.600–1.500").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive current entry point | Connected to input/source side of rectifier stage; accepts forward-biased current flow |
| Cathode | Positive current exit point | Marked by band; connects to load/ground side; defines polarity-sensitive mounting orientation |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and gas migration, ensuring long-term parameter stability in harsh environments |
| Category I metallurgical bond | Provides superior interfacial strength between semiconductor die and slug, preventing delamination under thermal stress |
| Controlled avalanche capability | Allows safe clamping of inductive kickback without destructive breakdown, supporting snubberless designs |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) and single-event effects per MicroNote 050 |
| Low thermal resistance | 38°C/W junction-to-lead enables efficient heat transfer through axial leads without heatsinking |
Applications
| Avionics Power Supplies | Military Radar Transmitters |
|---|---|
Use Scenario: Rectifying 3-phase AC input in airborne 270 V DC power generation systems. IC Role / Device Role / Timing Role: Standard recovery rectifier in full-wave bridge configuration handling sustained 1 A load current. Use Value: Hermetic sealing and -65°C to +175°C rating ensure uninterrupted operation during rapid cabin pressure and temperature excursions. | Use Scenario: Catch diode across pulse transformer secondary in high-voltage modulator stages. IC Role / Device Role / Timing Role: Freewheeling path for inductive energy recovery during high-power RF pulse generation. Use Value: 30 A surge rating and controlled avalanche prevent failure during repetitive 10 kV transient spikes. |
| Downhole Oilfield Sensors | Spacecraft DC-DC Converters |
Use Scenario: Input rectification in sealed telemetry modules exposed to 150°C ambient wellbore temperatures. IC Role / Device Role / Timing Role: Primary AC-to-DC conversion element in isolated flyback-derived supplies. Use Value: Linear derating to 0.3 A at 150°C and low IR enable stable output regulation without thermal runaway. | Use Scenario: Output rectification in radiation-tolerant 28 V bus converters aboard LEO satellites. IC Role / Device Role / Timing Role: Unidirectional current path in synchronous or non-synchronous buck-derived topologies. Use Value: Inherent radiation hardness eliminates need for shielding or redundancy, reducing mass and complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N3612US | Same electrical specs; MELF surface-mount package instead of axial glass | Requires PCB rework for SMT assembly; no lead-forming or through-hole footprint | Select when automated placement and board space constraints outweigh manual assembly needs |
| 1N5616JANTXV | Higher VRWM (600 V), same 1 A IO, but faster recovery (1.5 μs vs standard ~2–5 μs) | Better suited for higher-frequency switching; less suitable for pure line-frequency rectification | Select when system requires both higher voltage margin and reduced reverse recovery loss |
Compared with JAN1N3612/TR, JAN1N3612US offers identical electrical behavior in a compact MELF format ideal for space-constrained boards, while 1N5616JANTXV trades standard recovery for faster switching and higher voltage rating-making it appropriate for upgraded designs needing improved dynamic performance.
Availability
JAN1N3612/TR is available at Aetrix Electronics and suitable for avionics power supplies, military radar transmitters, and downhole oilfield sensors requiring stable component supply with guaranteed traceability and extended lifecycle support.
Supply support for JAN1N3612/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JAN1N3612/TR belongs to Microsemi's military-qualified standard recovery rectifier family, designed specifically for mission-critical power conversion where hermeticity, radiation tolerance, and extreme temperature resilience are mandatory.
FAQ
What is the maximum working peak reverse voltage for JAN1N3612/TR?
The JAN1N3612/TR has a specified working peak reverse voltage (VRWM) of 400 V, meaning it can reliably block up to 400 V of reverse-bias voltage across its full operational temperature range (-65°C to +175°C) without breakdown. This value is verified per MIL-PRF-19500/228 and appears in the Electrical Characteristics table on page 3 of T4-LDS-0190 Rev. 1. The minimum breakdown voltage is 480 V at 100 μA, providing a 20% safety margin above VRWM.
Is JAN1N3612/TR suitable for surface-mount assembly?
No, JAN1N3612/TR is an axial-lead through-hole device in a hermetically sealed glass package and is not compatible with standard SMT reflow processes. For surface-mount equivalents, Microsemi offers the JAN1N3612US variant-a MELF-packaged version with identical electrical ratings. The TR suffix indicates tape-and-reel packaging for automated insertion, not SMT compatibility.
Does JAN1N3612/TR have radiation-hardened characteristics?
Yes, JAN1N3612/TR exhibits inherent radiation hardness due to its hermetic glass construction and silicon die process, validated per Microsemi MicroNote 050. It is qualified for total ionizing dose (TID) environments typical of space and nuclear applications, making it suitable for use in spacecraft power systems and radiation-intensive industrial monitoring without additional shielding or derating.
What is the thermal resistance of JAN1N3612/TR?
The thermal resistance (junction-to-lead) of JAN1N3612/TR is 38°C/W when measured at a 3/8 inch (10 mm) lead length from the body. This value reflects efficient heat conduction through the tungsten slugs and copper leads, allowing the device to dissipate power without external heatsinking in many high-reliability applications-especially when operated within its derated current limits at elevated ambient temperatures.
How does JAN1N3612/TR differ from commercial-grade 1N3612?
JAN1N3612/TR is the military-qualified version of the 1N3612, fully compliant with MIL-PRF-19500/228, including 100% screening, lot traceability, extended temperature validation (-65°C to +175°C), and hermeticity testing. Commercial 1N3612 lacks these requirements, uses different packaging, and is not tested for radiation hardness or long-term reliability under extreme environmental stress.
JAN1N3612/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- A, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 400 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 1 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 300 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/228
- Mounting Type:
- Through Hole
- Supplier Device Package:
- A, Axial
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N3612/TR FAQ
1.How can I place an order for JAN1N3612/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N3612/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N3612/TR reliable?
The price and inventory of JAN1N3612/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N3612/TR is usually 5 days.
3.What payment methods are accepted for JAN1N3612/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N3612/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N3612/TR?
JAN1N3612/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N3612/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N3612/TR?
For technical support, including JAN1N3612/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N3612/TR requirements.
6.How does Aetrix verify that JAN1N3612/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N3612/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N3612/TR meets industry standards.
7.What is the process for return or replacement of JAN1N3612/TR?
All JAN1N3612/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N3612/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N3612/TR part is unused and in its original packaging.
Return procedure for JAN1N3612/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N3612/TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
