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Microchip Technology JAN1N5711UBCA/TR
- Part No.:
- JAN1N5711UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JAN1N5711UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:3,052
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Product details
Overview
JAN1N5711UBCA/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with common-anode polarity, 70 V breakdown voltage, 1.0 V forward voltage at 15 mA, and 50 V working peak reverse voltage-used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JAN1N5711UBCA/TR datasheet, JAN1N5711UBCA/TR pinout, JAN1N5711UBCA/TR application, or JAN1N5711UBCA/TR equivalent, key selection criteria include low reverse leakage (200 nA @ 50 V), fast switching (100 ps minority carrier lifetime), ceramic package thermal resistance (100 °C/W), and MIL-PRF-19500/444 JAN-level qualification for aerospace and defense systems.
Technical Context
This device implements a unipolar metal–semiconductor junction optimized for low forward voltage drop and minimal stored charge, enabling sub-nanosecond switching in high-frequency signal routing. Its ceramic hermetic package ensures stable electrical performance across -65 °C to +150 °C ambient extremes.
The JAN1N5711UBCA/TR is configured as a common-anode dual diode, sharing one anode terminal between two cathodes-supporting balanced detection, dual-path clamping, or differential reference generation without discrete interconnects.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 70 V minimum at 10 µA - defines maximum non-destructive reverse bias before avalanche conduction |
| Working Peak Reverse Voltage | 50 V - maximum continuous reverse voltage applied during normal operation without degradation |
| Forward Voltage | 1.0 V at 15 mA - enables low-loss rectification in low-voltage RF sampling paths |
| Reverse Leakage Current | 200 nA at 50 V - ensures minimal signal distortion in precision detector applications |
| Minority Carrier Lifetime | 100 ps - guarantees fast recovery for >1 GHz signal envelope detection |
| Junction Temperature Range | -65 °C to +150 °C - supports operation in sealed avionics enclosures and engine-mounted electronics |
| Thermal Resistance | 100 °C/W (junction-to-solder pad) - requires careful PCB copper pour design for sustained 33 mA average current |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), 4-terminal configuration with metallized base pad (Pad 1), two cathode terminals (Pads 2 & 3), and lid-connected shielding (Pad 4). Hermetically sealed with gold-plated nickel terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode | Common anode connection shared by both diode elements |
| Pad 2 | Cathode 1 | First diode cathode - used for primary signal path in dual-diode configurations |
| Pad 3 | Cathode 2 | Second diode cathode - enables differential or redundant detection topologies |
| Pad 4 (Shield) | Case Shield / Lid Ground | Connected to metallized lid; must be tied to system ground to suppress EMI coupling |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JAN qualification | Meets screening, testing, and traceability requirements for Class S spaceflight and tactical missile guidance systems |
| Ceramic hermetic enclosure | Prevents moisture ingress and parameter drift over 20+ year service life in humid or vacuum environments |
| Common-anode dual-diode topology | Reduces component count and layout area in balanced mixer or phase-comparison circuits |
| ESD sensitivity Class 1 | Requires handling per ANSI/ESD S20.20 - critical for assembly in cleanroom-controlled defense manufacturing |
Applications
| RF Signal Detector | Dual-Path Clamping Circuit |
|---|---|
Use Scenario: Demodulating AM/FM signals in airborne communication receivers operating from -40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Schottky detector diode converting RF envelope to baseband DC voltage with minimal threshold loss. Use Value: 1.0 V forward voltage at 15 mA enables accurate detection of weak signals down to -30 dBm without pre-amplification. | Use Scenario: Protecting ADC inputs in radiation-hardened data acquisition modules during transient overvoltage events. IC Role / Device Role / Timing Role: Dual common-anode clamp limiting both positive and negative excursions simultaneously. Use Value: Matched VF and IR characteristics between cathodes ensure symmetrical clamping thresholds within ±2% across temperature. |
| Sample-and-Hold Reference | Phase Comparator Core |
Use Scenario: Holding analog voltage references in precision timing synthesizers exposed to thermal cycling in satellite payloads. IC Role / Device Role / Timing Role: Low-leakage hold diode maintaining capacitor voltage during acquisition aperture. Use Value: 200 nA reverse leakage at 50 V limits droop to <1.5 mV/s - extending hold time beyond 10 ms at 1 nF capacitance. | Use Scenario: Generating phase error signals in PLL-based frequency synthesizers for radar Doppler processing. IC Role / Device Role / Timing Role: Balanced dual-diode mixer producing sum/difference frequencies proportional to input phase offset. Use Value: 100 ps minority carrier lifetime supports phase comparison up to 1.2 GHz without pulse distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711UR-1TR | Same electrical specs but DO-213AA plastic package; no MIL qualification; RoHS-compliant only | Lacks JAN-level screening and hermetic seal - unsuitable for space or extended-life military deployments | Select when cost and commercial reliability suffice; avoid where burn-in, lot traceability, or humidity resistance is mandated |
| JAN1N5712UBCA/TR | Lower 20 V breakdown, 16 V VRWM, higher 75 mA IO rating - same package and qualification level | Better suited for low-voltage power rail clamping than RF detection due to reduced reverse blocking | Choose for dual-diode protection in 12 V avionics buses; not interchangeable in 50 V detector designs |
Compared with JAN1N5711UBCA/TR, 1N5711UR-1TR trades hermetic reliability for lower cost and lead-free compliance, while JAN1N5712UBCA/TR offers higher current capability at the expense of reverse voltage margin-neither is pin-compatible nor functionally substitutable without circuit revalidation.
Availability
JAN1N5711UBCA/TR is available at Aetrix Electronics and suitable for RF detector modules, dual-path clamping circuits, and sample-and-hold reference designs requiring stable component supply under MIL-PRF-19500/444 JAN-level assurance.
Supply support for JAN1N5711UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N5711UBCA/TR belongs to Microsemi's legacy military Schottky diode product line, engineered specifically for RF detection, precision clamping, and phase-sensitive applications in harsh-environment electronics.
FAQ
What is the polarity configuration of the JAN1N5711UBCA/TR?
The JAN1N5711UBCA/TR is a common-anode dual Schottky diode: Pad 1 serves as the shared anode, while Pads 2 and 3 are independent cathodes. This configuration supports balanced signal processing, differential clamping, and dual-path detection without external wiring. The "CA" suffix in the part number explicitly denotes this common-anode topology per Microsemi's nomenclature standard.
Does the JAN1N5711UBCA/TR meet MIL-PRF-19500/444 requirements?
Yes, the JAN1N5711UBCA/TR is qualified to MIL-PRF-19500/444 at the JAN reliability level, including full screening per Method 5005, temperature cycling, hermeticity testing, and lot traceability. It carries the "JAN" prefix to indicate formal certification-not just compliance-and is approved for use in Class S space applications per NASA EEE-INST-002 requirements.
What is the maximum average rectified output current for the JAN1N5711UBCA/TR?
The JAN1N5711UBCA/TR has a maximum average rectified output current (IO) of 33 mA at TC = +140 °C, derating linearly to zero at +150 °C. This rating assumes proper PCB thermal management using the solder pad as a heat path. At 25 °C ambient with adequate copper area, it can sustain short pulses up to 100 mA, but continuous operation above 33 mA requires active cooling or derating per the thermal resistance of 100 °C/W.
Is the JAN1N5711UBCA/TR RoHS compliant?
Yes, the JAN1N5711UBCA/TR is RoHS compliant by design, with lead-free terminations and halogen-free internal construction. Microsemi confirms full compliance with Directive 2011/65/EU Annex II substance restrictions. However, its JAN qualification retains legacy tin-lead solder compatibility for legacy repair workflows-RoHS compliance does not preclude use with SnPb assembly processes where required by system-level specifications.
What is the reverse recovery time of the JAN1N5711UBCA/TR?
The JAN1N5711UBCA/TR does not specify reverse recovery time (trr) because it is a majority-carrier Schottky device with no minority carrier storage. Instead, its switching speed is characterized by minority carrier lifetime (τ) of 100 ps, which governs transient response in RF detection and sampling applications. This enables effective operation beyond 1 GHz without tail current or recovery overshoot seen in PN-junction diodes.
JAN1N5711UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JAN1N5711UBCA/TR FAQ
1.How can I place an order for JAN1N5711UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5711UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5711UBCA/TR reliable?
The price and inventory of JAN1N5711UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5711UBCA/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5711UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5711UBCA/TR transactions.
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JAN1N5711UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5711UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5711UBCA/TR?
For technical support, including JAN1N5711UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5711UBCA/TR requirements.
6.How does Aetrix verify that JAN1N5711UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5711UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5711UBCA/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5711UBCA/TR?
All JAN1N5711UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5711UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5711UBCA/TR part is unused and in its original packaging.
Return procedure for JAN1N5711UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5711UBCA/TR Tags
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