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Microchip Technology JAN1N5711UBD/TR
- Part No.:
- JAN1N5711UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JAN1N5711UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:6,375
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Product details
Overview
JAN1N5711UBD/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with unidirectional polarity, 70 V breakdown voltage, 50 V working peak reverse voltage, and 33 mA average rectified output current - used in high-reliability RF detector, sample-and-hold, and low-leakage clamp circuits.
For engineers reviewing the JAN1N5711UBD/TR datasheet, JAN1N5711UBD/TR pinout, JAN1N5711UBD/TR application, or JAN1N5711UBD/TR equivalent, key selection factors include its MIL-PRF-19500/444 JAN-level qualification, 200 nA max reverse leakage at 50 V, 0.41 V forward voltage at 1 mA, ceramic package thermal resistance of 100 °C/W, and ESD sensitivity Class 1 handling requirements.
Technical Context
This Schottky diode operates as a low-voltage, low-leakage unidirectional rectifier optimized for signal-level detection and clamping in harsh-environment electronics. Its 100 ps minority carrier lifetime enables fast switching with minimal stored charge, while the gold-plated nickel terminals ensure stable interconnect reliability under thermal cycling.
The ceramic case provides hermetic sealing and superior thermal stability over plastic SMT packages, supporting operation from –65 °C to +150 °C. The device is rated for 260 °C soldering (10 s) and exhibits 2.0 pF junction capacitance at 0 V, critical for RF and high-speed analog interface integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 70 V - ensures safe operation up to 70 V reverse bias before avalanche conduction begins |
| Working Peak Reverse Voltage | 50 V - maximum continuous reverse voltage usable in rectification without degradation |
| Forward Voltage @ 1 mA | 0.41 V - enables low-loss signal detection and minimal forward drop in bias networks |
| Reverse Leakage @ 50 V | 200 nA - supports precision clamping and low-offset sampling in high-impedance nodes |
| Average Rectified Current | 33 mA - defines maximum continuous DC output capability with derating above +140 °C |
| Junction Temp Range | –65 °C to +150 °C - qualifies for extended-temperature military and aerospace deployments |
| Thermal Resistance | 100 °C/W - determines temperature rise per watt dissipated at the solder pad interface |
Pinout & Package
Ceramic surface-mount UB package with two-terminal configuration: base-mounted metallized pads on underside, hermetically sealed ceramic body, gold-plated nickel terminations, and approximate weight of 0.04 g. Dimensions comply with MIL-PRF-19500/444 mechanical standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to positive-side signal path; must be biased higher than cathode for conduction |
| Cathode | Forward current exit point | Connected to reference or return node; reverse-biased during blocking state |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JAN qualification | Meets stringent screening, testing, and traceability requirements for defense-critical systems |
| Low-profile ceramic enclosure | Enables compact layout in space-constrained avionics and missile guidance assemblies |
| 200 nA max reverse leakage at 50 V | Minimizes error current in precision sample-and-hold and RF detector front-ends |
| 0.41 V forward voltage at 1 mA | Reduces power loss and self-heating in low-current bias and sensing applications |
| 100 ps minority carrier lifetime | Supports sub-nanosecond switching in pulse shaping and fast recovery clamp circuits |
Applications
| RF Detector Circuit | Sample-and-Hold Amplifier |
|---|---|
Use Scenario: Demodulating AM signals in secure radio receivers operating across –55 °C to +125 °C ambient. IC Role / Device Role / Timing Role: Signal-level rectifier converting RF envelope to baseband DC voltage. Use Value: 200 nA reverse leakage prevents baseline drift; 0.41 V VF ensures accurate low-amplitude detection. | Use Scenario: Holding analog sensor outputs in airborne inertial measurement units during ADC conversion windows. IC Role / Device Role / Timing Role: Low-leakage clamp diode isolating hold capacitor from input source during acquisition phase. Use Value: Ceramic hermeticity maintains leakage stability over 20-year service life; 100 ps τ minimizes droop-induced error. |
| High-Temp Power Supply Clamp | ESD-Sensitive Test Interface |
Use Scenario: Protecting op-amp inputs in downhole oilfield logging tools exposed to +150 °C wellbore temperatures. IC Role / Device Role / Timing Role: Transient voltage clamp limiting input swing beyond rail-to-rail range. Use Value: –65 °C to +150 °C junction rating allows direct placement near heat sources; gold terminations resist corrosion. | Use Scenario: Front-end protection for automated test equipment probing Class 1 ESD-sensitive ICs during wafer sort. IC Role / Device Role / Timing Role: Low-capacitance (2.0 pF) shunt element diverting ESD pulses away from DUT pins. Use Value: 2.0 pF CT avoids signal distortion at >100 MHz; ceramic package withstands repeated ESD stress without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N5711UB-TR | Same die, identical electrical specs, but tape-and-reel packaging without "D" suffix designation | No functional difference; "D" denotes specific reel orientation or moisture sensitivity level per Microsemi internal spec | Select JAN1N5711UBD/TR when reel orientation or MSL compliance per J-STD-020 is required |
| 1N5711UR-1 | DO-213AA plastic package; same 70 V V(BR), but 500 nA IR @ 50 V and 150 °C max TJ | Lacks MIL-PRF-19500/444 qualification; unsuitable for flight-critical or radiation-tolerant designs | Choose 1N5711UR-1 only for commercial-grade cost-sensitive industrial controls where hermeticity is not mandated |
Compared with JAN1N5711UBD/TR, JAN1N5711UB-TR offers identical performance in alternate packaging, while 1N5711UR-1 trades military reliability for lower cost and wider commercial availability - making the former ideal for logistics continuity and the latter for non-qualified prototyping.
Availability
JAN1N5711UBD/TR is available at Aetrix Electronics and suitable for RF detector circuits, sample-and-hold amplifiers, and high-temperature clamp applications requiring stable component supply across extended product lifecycles.
Supply support for JAN1N5711UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N5711UBD/TR belongs to Microsemi's legacy military diode product line, engineered specifically for hermetic, high-temperature, low-leakage signal conditioning in mission-critical electronic subsystems.
FAQ
What is the maximum reverse voltage rating for JAN1N5711UBD/TR?
The JAN1N5711UBD/TR has a working peak reverse voltage (VRWM) of 50 V and a minimum breakdown voltage (V(BR)) of 70 V at 10 µA. It is rated for continuous operation up to 50 V reverse bias; exceeding this may cause irreversible leakage increase or thermal runaway under sustained conditions. Derating applies above +140 °C ambient.
Is JAN1N5711UBD/TR qualified to MIL-PRF-19500/444?
Yes, JAN1N5711UBD/TR is qualified to MIL-PRF-19500/444 at the JAN reliability level, including full screening per Method 5005 and environmental testing for vibration, shock, temperature cycling, and hermeticity. This qualification is documented in Microsemi's T4-LDS-0040-2 specification sheet.
What does the "D" suffix in JAN1N5711UBD/TR signify?
The "D" suffix in JAN1N5711UBD/TR indicates a specific tape-and-reel configuration compliant with EIA-418D standards and assigned moisture sensitivity level (MSL) per J-STD-020. It does not alter electrical parameters but defines packaging format, reel orientation, and handling requirements for automated assembly.
Can JAN1N5711UBD/TR replace 1N5711UR-1 in a design?
No - JAN1N5711UBD/TR cannot directly replace 1N5711UR-1 due to fundamental differences: the former is ceramic-hermetic, MIL-qualified, and rated to +150 °C; the latter is plastic-packaged, commercial-grade, and limited to +125 °C. Substitution requires requalification for reliability, thermal, and ESD performance.
What is the forward voltage of JAN1N5711UBD/TR at 15 mA?
The forward voltage of JAN1N5711UBD/TR is specified as 1.0 V maximum at 15 mA forward current. At 1 mA, it is 0.41 V typical. This voltage increases with current and temperature; actual VF at 15 mA in circuit depends on thermal resistance and ambient conditions.
JAN1N5711UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JAN1N5711UBD/TR FAQ
1.How can I place an order for JAN1N5711UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5711UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5711UBD/TR reliable?
The price and inventory of JAN1N5711UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5711UBD/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5711UBD/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5711UBD/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5711UBD/TR?
JAN1N5711UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5711UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5711UBD/TR?
For technical support, including JAN1N5711UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5711UBD/TR requirements.
6.How does Aetrix verify that JAN1N5711UBD/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5711UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5711UBD/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5711UBD/TR?
All JAN1N5711UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5711UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5711UBD/TR part is unused and in its original packaging.
Return procedure for JAN1N5711UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5711UBD/TR Tags
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BAV99-7-F
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BAT54C-7-F
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BAV99,215
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BAT54SLT1G
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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
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BAT54S,215
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MMBD1503-TP
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