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Microchip Technology JAN1N5711UB/TR
- Part No.:
- JAN1N5711UB/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JAN1N5711UB/TR.pdf
- Description:
- SMALL-SIGNAL SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:9,641
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Product details
Overview
JAN1N5711UB/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with unidirectional polarity, 70 V breakdown voltage, 1.0 V forward voltage at 15 mA, and 50 V working peak reverse voltage-used in high-reliability RF detector, sample-and-hold, and low-leakage clamping circuits.
For engineers reviewing the JAN1N5711UB/TR datasheet, JAN1N5711UB/TR pinout, JAN1N5711UB/TR application, or JAN1N5711UB/TR equivalent, key selection criteria include its MIL-PRF-19500/444 qualification level (JAN), 200 nA max reverse leakage at 50 V, 2.0 pF junction capacitance at 0 V, -65°C to +150°C operating temperature range, and ceramic DO-213AA package compatibility with high-temperature reflow.
Technical Context
This Schottky diode employs a low-barrier metal-semiconductor junction enabling fast switching (reverse recovery time not specified but implied by τ = 100 ps minority carrier lifetime) and minimal forward conduction loss. Its ceramic hermetic package ensures stable electrical performance under thermal cycling and radiation exposure.
Designed for unidirectional operation, the JAN1N5711UB/TR supports DC and RF signal rectification up to ~1 GHz (inferred from 2.0 pF capacitance and Schottky physics), with gold-plated terminals ensuring solderability and corrosion resistance per MIL-STD-750.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 70 V @ 10 µA - defines maximum non-destructive reverse bias before avalanche conduction begins. |
| Forward Voltage VF | 1.0 V @ 15 mA - enables low-loss rectification in battery-powered and low-voltage signal paths. |
| Working Peak Reverse Voltage VRWM | 50 V - maximum continuous reverse voltage usable in clamp/detector designs without degradation. |
| Reverse Leakage IR | 200 nA @ 50 V - ensures minimal signal distortion in high-impedance sampling and precision detector circuits. |
| Junction Capacitance CT | 2.0 pF @ 0 V - supports RF detection up to UHF frequencies with predictable impedance matching. |
| Operating Temperature | -65°C to +150°C - qualified for aerospace, downhole, and defense systems requiring extreme environmental resilience. |
| Average Rectified Current IO | 33 mA - sets continuous power handling limit for small-signal rectification and biasing applications. |
Pinout & Package
Ceramic DO-213AA surface-mount package (hermetically sealed, gold-plated nickel terminals, ~0.04 g weight). Dimensions: 2.92–3.25 mm length × 2.16–2.74 mm width × 1.17–1.42 mm height. Metallized base pad serves as cathode terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Cathode | Main current exit path; metallized area on bottom of ceramic case; connects to PCB ground or return plane. |
| Pad 2 (Emitter) | Anode | Top-side metallized contact; carries forward current into device; requires precise stencil aperture for solder paste control. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JAN qualification | Guarantees screening for burn-in, thermal shock, and life testing per military reliability standards. |
| Low-profile ceramic hermetic package | Enables use in sealed modules and vacuum environments where plastic packages outgas or degrade. |
| 100 ps effective minority carrier lifetime | Supports sub-nanosecond switching behavior critical for RF envelope detection and pulse shaping. |
| ESD sensitivity Class 1 | Requires handling per ANSI/ESD S20.20; limits static discharge exposure during assembly and test. |
| RoHS compliant by design | Meets lead-free soldering requirements without compromising hermeticity or high-temp performance. |
Applications
| RF Detector Circuit | Precision Sample-and-Hold |
|---|---|
Use Scenario: Demodulating AM signals in missile telemetry receivers operating from -55°C to +125°C. IC Role / Device Role / Timing Role: Signal rectifier converting RF envelope to baseband DC voltage with minimal lag and distortion. Use Value: 2.0 pF capacitance and 200 nA leakage preserve amplitude fidelity across temperature extremes. |
Use Scenario: Holding analog sensor outputs in avionics inertial measurement units during ADC conversion cycles. IC Role / Device Role / Timing Role: Low-leakage hold capacitor discharge prevention diode in feedback path of op-amp integrator. Use Value: Sub-µA leakage ensures <1 mV drift over 10 ms hold time at full temperature range. |
| High-Temp Power Supply Clamp | Low-Voltage Signal Clamping |
Use Scenario: Protecting input stages of downhole logging tools exposed to 150°C ambient wellbore temperatures. IC Role / Device Role / Timing Role: Transient voltage suppressor limiting rail excursions during load dump or ESD events. Use Value: Stable 70 V V(BR) and 50 V VRWM maintain protection margin even at junction temperature near 150°C. |
Use Scenario: Biasing and clamping audio front-end amplifiers in secure communications handsets. IC Role / Device Role / Timing Role: DC-level shifter and AC-coupling isolator preventing amplifier saturation during signal transients. Use Value: 1.0 V VF at 15 mA enables precise 0.5 V clamp thresholds with minimal forward drop error. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711UR-1TR | Same electrical specs but commercial-grade (non-military) qualification; DO-213AA package, RoHS-compliant. | Lacks MIL-PRF-19500 screening; unsuitable for flight-critical or space-qualified designs. | Select when cost and lead time outweigh need for JAN-level reliability testing. |
| JANTX1N5711UB | Identical die and package; differs only in screening level (JANTX vs JAN per MIL-PRF-19500/444). | Higher screening yield and longer test duration; used where extended burn-in or lot traceability required. | Choose when program mandates JANTX-level documentation or extended reliability reporting. |
Compared with JAN1N5711UB/TR, the 1N5711UR-1TR offers identical performance at lower cost but no military screening, while JANTX1N5711UB provides enhanced test coverage for mission-critical deployments-enabling trade-offs between qualification rigor, supply assurance, and system-level reliability requirements.
Availability
JAN1N5711UB/TR is available at Aetrix Electronics and suitable for RF detector circuits, precision sample-and-hold systems, and high-temperature power supply clamp designs requiring stable component supply across extended lifecycle programs.
Supply support for JAN1N5711UB/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N5711UB/TR belongs to Microsemi's legacy military Schottky diode product line, engineered specifically for hermetic, high-temperature, low-leakage signal conditioning in mission-critical electronic subsystems.
FAQ
What is the maximum reverse voltage rating for JAN1N5711UB/TR?
The JAN1N5711UB/TR has a working peak reverse voltage (VRWM) of 50 V and a minimum breakdown voltage V(BR) of 70 V at 10 µA. This means it can safely block up to 50 V continuously in circuit operation, with 70 V representing the onset of avalanche conduction under controlled test conditions. Designers must respect the 50 V VRWM limit for long-term reliability.
Is JAN1N5711UB/TR compatible with lead-free reflow soldering processes?
Yes, JAN1N5711UB/TR is rated for solder temperature of 260°C for 10 seconds, fully compatible with standard IPC/JEDEC J-STD-020 lead-free reflow profiles. Its ceramic package and gold-plated terminals ensure robust wetting and intermetallic formation without cracking or delamination.
Does JAN1N5711UB/TR have a specified reverse recovery time (trr)?
No trr value is explicitly specified in the datasheet. However, the effective minority carrier lifetime τ is given as 100 ps, which implies nanosecond-scale switching behavior typical of Schottky diodes. This makes JAN1N5711UB/TR suitable for RF detection and high-speed clamping where conventional trr metrics are less relevant than junction capacitance and leakage.
What does the "UB" suffix indicate in JAN1N5711UB/TR?
The "UB" suffix denotes the ceramic surface-mount DO-213AA package variant of the 1N5711. It distinguishes this version from axial-leaded (DO-35) and other surface-mount variants (e.g., "UR" for commercial-grade DO-213AA). The "TR" in the full part number indicates tape-and-reel packaging per EIA-418D.
How does JAN1N5711UB/TR differ from JAN1N5712UB?
JAN1N5711UB/TR has higher breakdown (70 V vs. 20 V) and VRWM (50 V vs. 16 V), lower average current rating (33 mA vs. 75 mA), and higher reverse leakage (200 nA vs. 150 nA at rated VR). These differences reflect distinct optimization: JAN1N5711UB/TR prioritizes voltage standoff and RF performance, while JAN1N5712UB emphasizes higher current handling at lower voltages.
JAN1N5711UB/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
- Operating Temperature - Junction:
- -65°C ~ 150°C
JAN1N5711UB/TR FAQ
1.How can I place an order for JAN1N5711UB/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5711UB/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5711UB/TR reliable?
The price and inventory of JAN1N5711UB/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5711UB/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5711UB/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5711UB/TR transactions.
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4.How is shipping managed for JAN1N5711UB/TR?
JAN1N5711UB/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5711UB/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5711UB/TR?
For technical support, including JAN1N5711UB/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5711UB/TR requirements.
6.How does Aetrix verify that JAN1N5711UB/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5711UB/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5711UB/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5711UB/TR?
All JAN1N5711UB/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5711UB/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5711UB/TR part is unused and in its original packaging.
Return procedure for JAN1N5711UB/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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