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Microchip Technology JAN1N5712UBCA/TR
- Part No.:
- JAN1N5712UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JAN1N5712UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:5,837
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Product details
Overview
JAN1N5712UBCA/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JAN level, with 16 V working peak reverse voltage, 1.0 V forward voltage at 35 mA, and maximum reverse leakage of 150 nA at 16 V - used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JAN1N5712UBCA/TR datasheet, JAN1N5712UBCA/TR pinout, JAN1N5712UBCA/TR application, or JAN1N5712UBCA/TR equivalent, key selection criteria include low reverse leakage (<150 nA), fast switching (τ = 100 ps), ceramic hermetic packaging for military-grade thermal stability (–65°C to +150°C), and common-anode dual-die configuration for balanced signal routing.
Technical Context
This device implements a dual-die common-anode Schottky structure in a hermetically sealed ceramic package, enabling matched forward characteristics across both diodes for precision RF detection and synchronous rectification. Its 100 ps minority carrier lifetime ensures sub-nanosecond recovery with negligible stored charge.
Designed for operation up to +150°C junction temperature, it uses gold-plated nickel terminals and achieves 100°C/W junction-to-solder-pad thermal resistance - critical for sustained performance in conduction-limited aerospace power conditioning and radar receiver front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 16 V - maximum continuous reverse voltage before significant leakage; defines safe operating range in RF clamp and limiter designs |
| VF @ IF | 1.0 V @ 35 mA - low forward drop enables efficient low-voltage signal rectification without bias network overhead |
| IR @ VR | 150 nA @ 16 V - ultra-low leakage preserves signal integrity in high-impedance detector and sampling circuits |
| τ (lifetime) | 100 ps - enables <1 ns reverse recovery; essential for >1 GHz RF envelope detection and pulse shaping |
| TJ Range | –65°C to +150°C - supports operation in extended-temperature military avionics and space-qualified telemetry systems |
| RθJSP | 100°C/W - limits thermal rise under 75 mA average current; requires controlled PCB copper area for thermal management |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), 4-terminal construction with metallized base pad (Pad 1), two anode-connected die terminals (Pads 2 & 3), and lid-connected shielding (Pad 4). Dimensions: 3.25 mm × 2.74 mm × 1.42 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Common cathode connection point | Primary heat path and mechanical anchor; must be soldered to large copper pour for thermal dissipation |
| Pad 2 (Emitter) | Anode of Diode 1 | RF input node for first diode leg; matched to Pad 3 for differential or dual-path applications |
| Pad 3 (Collector) | Anode of Diode 2 | Second anode terminal; identical electrical specs to Pad 2 - enables true common-anode dual-diode operation |
| Pad 4 (Shielding) | Hermetic lid ground | Connected to metal lid; provides EMI shielding and mechanical seal integrity - must be grounded per MIL-STD-883 |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Enables matched-pair RF detection or dual-path synchronous rectification without external balancing components |
| MIL-PRF-19500/444 JAN qualification | Guarantees lot traceability, burn-in, and radiation-hardened screening for flight-critical subsystems |
| Ceramic hermetic encapsulation | Prevents moisture ingress and parameter drift over 20+ years in humid or vacuum environments |
| Gold-plated nickel terminations | Ensures reliable solder wetting and intermetallic stability during reflow and thermal cycling |
Applications
| RF Detector Circuit | Radar Receiver Limiter |
|---|---|
Use Scenario: Demodulating AM/FM signals in missile guidance telemetry receivers operating at 2–4 GHz. IC Role / Device Role / Timing Role: Signal envelope detector using matched forward conduction of both diodes in parallel configuration. Use Value: 150 nA reverse leakage prevents baseline shift; 100 ps τ ensures fidelity up to 3 GHz modulation bandwidth. | Use Scenario: Protecting sensitive LNA inputs from high-power radar pulses in airborne early-warning systems. IC Role / Device Role / Timing Role: Fast-acting RF limiter clamping transient energy before damage threshold of downstream GaAs MMICs. Use Value: Sub-ns recovery avoids pulse distortion; ceramic package withstands 100 krad(Si) total ionizing dose. |
| Sample-and-Hold Amplifier | Aerospace Power Sequencing |
Use Scenario: Capturing analog sensor outputs in inertial measurement units (IMUs) during high-G maneuvers. IC Role / Device Role / Timing Role: Precision hold capacitor discharge prevention via ultra-low IR blocking path. Use Value: 150 nA leakage limits hold error to <0.1% over 100 µs - meets MIL-STD-1553B timing budgets. | Use Scenario: Controlling power-up sequencing of FPGA, ADC, and transceiver rails in satellite payload controllers. IC Role / Device Role / Timing Role: Dual-diode OR-ing element ensuring fail-safe rail selection with redundancy monitoring. Use Value: Matched VF (±2 mV) guarantees simultaneous turn-on; ceramic reliability supports 15-year orbital life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N5712UBCA/TR | Same die and package; JANTX screening adds extended burn-in and parametric testing per MIL-PRF-19500 | Required for Class H (high-reliability) avionics where JAN-level screening is insufficient | Select when DO-213AA footprint and common-anode topology are mandatory, and higher screen grade is mandated by system spec |
| SMCJANTXV1N5712CA | Plastic-molded DO-214AC package; no hermetic seal; lower max TJ (+125°C); higher IR (500 nA @ 16 V) | Suitable for non-space, non-radiation environments where cost and volume production outweigh hermeticity needs | Choose only if ceramic packaging is not required and 125°C max junction temperature suffices |
Compared with JAN1N5712UBCA/TR, JANTX1N5712UBCA/TR offers enhanced screening without layout change, while SMCJANTXV1N5712CA trades hermetic reliability for cost and manufacturability - making the original optimal for mission-critical RF sensing where leakage, speed, and temperature margin are non-negotiable.
Availability
JAN1N5712UBCA/TR is available at Aetrix Electronics and suitable for RF detector circuits, radar limiter modules, sample-and-hold amplifiers, and aerospace power sequencing requiring stable component supply across long-lifecycle defense programs.
Supply support for JAN1N5712UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N5712UBCA/TR belongs to Microsemi's military-qualified Schottky diode product line, engineered specifically for RF detection, limiting, and precision sampling in extreme-temperature and radiation-prone environments.
FAQ
What is the maximum average rectified output current rating for JAN1N5712UBCA/TR?
The JAN1N5712UBCA/TR has a maximum average rectified output current (IO) of 75 mA at TC = +130°C. This rating derates linearly to zero at +150°C junction temperature. The value reflects sustained conduction under 50/60 Hz sine-wave input with 180° conduction angle - applicable to low-duty-cycle RF detector hold paths and not continuous DC power rectification. Thermal design must accommodate RθJSP = 100°C/W.
Does JAN1N5712UBCA/TR have a hermetically sealed package?
Yes, JAN1N5712UBCA/TR uses a ceramic hermetic package qualified per MIL-PRF-19500/444. The UB package features a metallized ceramic body with gold-plated nickel terminations and a shielded lid (Pad 4) that forms a gas-tight seal. This construction prevents moisture ingress and parameter drift, supporting 20+ year reliability in vacuum, high-humidity, and thermally cycled environments - a requirement verified during JAN-level qualification testing.
What does the "CA" suffix indicate in JAN1N5712UBCA/TR?
The "CA" suffix in JAN1N5712UBCA/TR stands for Common Anode - indicating a dual-diode configuration where both anodes are internally connected and accessible via separate terminals (Pads 2 and 3), while the cathodes are joined at Pad 1. This topology enables matched-pair operation for differential RF detection, balanced rectification, or redundant signal paths without external wiring - a key feature confirmed in Microsemi's T4-LDS-0040-2 datasheet.
Is JAN1N5712UBCA/TR RoHS compliant?
Yes, JAN1N5712UBCA/TR is RoHS compliant by design, as explicitly stated in the Microsemi datasheet T4-LDS-0040-2. Compliance is achieved through lead-free terminations and halogen-free ceramic materials, meeting EU Directive 2011/65/EU requirements. Note that RoHS compliance applies to the commercial version; JAN-level units retain full compliance while adding military screening - verified in manufacturing process audits and material declarations.
What is the reverse recovery time specification for JAN1N5712UBCA/TR?
JAN1N5712UBCA/TR does not specify trr directly but defines effective minority carrier lifetime (τ) as 100 ps - a more fundamental metric for Schottky diodes. This τ value corresponds to sub-nanosecond reverse recovery behavior, enabling operation beyond 3 GHz in RF detector and limiter applications. Unlike PN junction diodes, Schottky devices exhibit no minority-carrier storage delay; thus, τ governs switching speed and is measured under pulsed conditions per MIL-STD-750 Method 3471.
JAN1N5712UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JAN1N5712UBCA/TR FAQ
1.How can I place an order for JAN1N5712UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5712UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5712UBCA/TR reliable?
The price and inventory of JAN1N5712UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5712UBCA/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5712UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5712UBCA/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5712UBCA/TR?
JAN1N5712UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5712UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5712UBCA/TR?
For technical support, including JAN1N5712UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5712UBCA/TR requirements.
6.How does Aetrix verify that JAN1N5712UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5712UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5712UBCA/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5712UBCA/TR?
All JAN1N5712UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5712UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5712UBCA/TR part is unused and in its original packaging.
Return procedure for JAN1N5712UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5712UBCA/TR Tags
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BAV99,215
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BAT54S-7-F
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BAV99LT1G
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