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Microchip Technology JAN1N5712UBD/TR
- Part No.:
- JAN1N5712UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JAN1N5712UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:2,226
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Product details
Overview
JAN1N5712UBD/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JAN level, with 16 V working peak reverse voltage, 1.0 V forward voltage at 35 mA, and maximum reverse leakage of 150 nA at 16 V - used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JAN1N5712UBD/TR datasheet, JAN1N5712UBD/TR pinout, JAN1N5712UBD/TR application, or JAN1N5712UBD/TR equivalent, key selection factors include its military-grade ceramic package, low 2.0 pF junction capacitance, 100 °C/W thermal resistance, and common-anode (CA) polarity configuration for dual-diode signal routing.
Technical Context
This device implements a low-barrier Schottky junction optimized for high-speed switching and minimal stored charge, enabling sub-nanosecond reverse recovery performance. Its 100 ps effective minority carrier lifetime supports operation in VHF/UHF detection and clamping applications up to 500 MHz.
The ceramic UB package provides hermetic sealing and stable electrical characteristics across -65 °C to +150 °C ambient, with gold-plated terminals ensuring solderability and interconnect reliability under thermal cycling and vibration stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 16 V - Maximum continuous reverse voltage before significant leakage onset; defines safe operating range in RF envelope detection. |
| VF @ IF | 1.0 V @ 35 mA - Forward drop at rated current; enables low-loss rectification in low-voltage sampling circuits. |
| IR @ VR | 150 nA @ 16 V - Ultra-low reverse leakage preserves signal integrity in high-impedance detector nodes. |
| CT @ 0 V | 2.0 pF - Junction capacitance at zero bias; supports >500 MHz small-signal operation with minimal phase distortion. |
| IO (avg) | 75 mA - Average rectified output current; sufficient for pulsed RF detector and precision clamp loads. |
| RθJSP | 100 °C/W - Thermal resistance from junction to solder pad; requires careful PCB copper area design for sustained 75 mA operation. |
Pinout & Package
Ceramic surface-mount UB package (hermetically sealed, gold-plated Ni terminals), dimensions per MIL-PRF-19500/444: 0.115–0.128 in length × 0.085–0.108 in width × 0.046–0.056 in height (2.92–3.25 mm × 2.16–2.74 mm × 1.17–1.42 mm). Marking includes part number, date code, and Microsemi ID.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 | Anode (Common Anode configuration) | Shared anode connection for dual-diode topology; routes forward current from both cathodes. |
| Pad 2 | Cathode 1 | Independent cathode terminal for first Schottky junction; used for primary signal path routing. |
| Pad 3 | Cathode 2 | Independent cathode terminal for second Schottky junction; enables balanced or differential detection. |
| Pad 4 | Shield / Case | Metallized lid connection; must be grounded to suppress EMI and stabilize capacitance in RF layouts. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JAN qualification | Guarantees screening, testing, and traceability for defense/aerospace programs requiring QML certification. |
| Common-anode (CA) dual-diode topology | Enables compact dual-path signal conditioning without external wiring; reduces parasitic inductance in RF detector ICs. |
| 2.0 pF junction capacitance | Minimizes capacitive loading on high-frequency inputs, preserving bandwidth in 100–500 MHz receiver front-ends. |
| 100 ps minority carrier lifetime | Ensures negligible stored charge, eliminating reverse recovery tail and enabling clean zero-crossing detection. |
| Hermetic ceramic package | Prevents moisture ingress and parameter drift over 20+ years in harsh environments including space and avionics. |
Applications
| RF Detector Circuit | Sample-and-Hold Amplifier |
|---|---|
Use Scenario: Demodulating AM/FM signals in radar warning receivers and electronic warfare systems. IC Role / Device Role / Timing Role: Signal envelope extraction via half-wave rectification with minimal distortion. Use Value: 150 nA reverse leakage and 2.0 pF capacitance preserve weak-signal fidelity below -70 dBm input levels. | Use Scenario: Capturing transient analog waveforms in high-speed data acquisition modules. IC Role / Device Role / Timing Role: Precision clamping diode in hold capacitor charging path. Use Value: 1.0 V VF at 35 mA ensures fast settling and <10 ns acquisition time with sub-mV droop. |
| Low-Voltage Power OR-ing | High-Reliability Oscillator Clamp |
Use Scenario: Redundant power rail selection in flight control computers and satellite bus management units. IC Role / Device Role / Timing Role: Low-loss forward path switch preventing backfeed between dual supplies. Use Value: 16 V VRWM and 75 mA IO support 12 V system rails with margin for transients and derating. | Use Scenario: Limiting amplitude excursions in crystal oscillator feedback loops for atomic clock references. IC Role / Device Role / Timing Role: Symmetric clamping element protecting active device from overdrive. Use Value: Matched dual-junction characteristics ensure balanced clipping and phase stability over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N5711UBD/TR | Higher VRWM (50 V), lower IO (33 mA), same CA topology and 2.0 pF CT | Better suited for higher-voltage RF detectors where leakage <200 nA at 50 V is acceptable | Select when system reverse voltage exceeds 16 V but average current stays ≤33 mA |
| SM1N5712US-TR | Plastic SOD-323 package, commercial grade only, RθJSP ≈ 200 °C/W, same electrical specs | Limited to non-military industrial use; unsuitable for extended temperature or radiation environments | Choose for cost-sensitive commercial designs where hermeticity and MIL qualification are not required |
Compared with JAN1N5712UBD/TR, JAN1N5711UBD/TR offers higher reverse voltage tolerance at reduced current capacity, while SM1N5712US-TR sacrifices military qualification and thermal performance for lower cost and smaller footprint - making JAN1N5712UBD/TR the sole choice for JAN-level dual-Schottky applications demanding 16 V/75 mA operation in ceramic hermetic packaging.
Availability
JAN1N5712UBD/TR is available at Aetrix Electronics and suitable for RF detector circuits, sample-and-hold amplifiers, low-voltage OR-ing networks, and high-reliability oscillator clamps requiring stable component supply across extended temperature and radiation-hardened environments.
Supply support for JAN1N5712UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N5712UBD/TR belongs to Microsemi's legacy MIL-qualified Schottky diode family, engineered specifically for RF detection, precision clamping, and redundant power management in mission-critical systems.
FAQ
What is the polarity configuration of JAN1N5712UBD/TR?
JAN1N5712UBD/TR uses a common-anode (CA) dual-diode configuration: Pad 1 is the shared anode, Pads 2 and 3 are independent cathodes, and Pad 4 is the grounded metallized lid. This layout supports balanced RF detection and dual-path signal routing without external interconnects, directly matching the "CA" suffix in the part nomenclature per Microsemi's T4-LDS-0040-2 specification.
Does JAN1N5712UBD/TR meet RoHS requirements?
Yes, JAN1N5712UBD/TR is RoHS compliant by design, as confirmed in the Microsemi T4-LDS-0040-2 datasheet. Its ceramic package, gold-plated nickel terminals, and lead-free assembly process satisfy Directive 2011/65/EU Annex II substance restrictions - though full compliance documentation (e.g., CoC) must be obtained from Aetrix Electronics for specific lot traceability.
What is the maximum operating temperature for JAN1N5712UBD/TR?
JAN1N5712UBD/TR has a junction and storage temperature range of -65 °C to +150 °C, per MIL-PRF-19500/444 qualification. At ambient temperatures above +130 °C, the average rectified output current must be linearly derated to zero at +150 °C - a requirement explicitly stated in the "Maximum Ratings" table of the T4-LDS-0040-2 datasheet.
Is JAN1N5712UBD/TR suitable for high-frequency RF applications?
Yes, JAN1N5712UBD/TR is optimized for high-frequency RF use: its 2.0 pF junction capacitance, 100 ps minority carrier lifetime, and sub-nanosecond reverse recovery enable stable operation up to 500 MHz. Graphs in the T4-LDS-0040-2 datasheet confirm low-capacitance I-V behavior and minimal IR variation across VHF/UHF bands - critical for envelope detection in radar and comms receivers.
How does the ceramic UB package differ from DO-213AA alternatives?
The ceramic UB package of JAN1N5712UBD/TR provides hermetic sealing, superior thermal stability (-65 °C to +150 °C), and lower parasitic inductance versus plastic DO-213AA variants like 1N5712UR-1. Unlike DO-213AA, the UB package includes a grounded metallized lid (Pad 4) for EMI shielding - a feature essential for MIL-qualified RF detector modules where signal integrity and long-term parameter stability are mandatory.
JAN1N5712UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JAN1N5712UBD/TR FAQ
1.How can I place an order for JAN1N5712UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5712UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5712UBD/TR reliable?
The price and inventory of JAN1N5712UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5712UBD/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5712UBD/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5712UBD/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5712UBD/TR?
JAN1N5712UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5712UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5712UBD/TR?
For technical support, including JAN1N5712UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5712UBD/TR requirements.
6.How does Aetrix verify that JAN1N5712UBD/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5712UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5712UBD/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5712UBD/TR?
All JAN1N5712UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5712UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5712UBD/TR part is unused and in its original packaging.
Return procedure for JAN1N5712UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5712UBD/TR Tags
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BAV99,215
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BAV99LT1G
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MMBD1503-TP
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