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Microchip Technology JAN1N5712UB/TR
- Part No.:
- JAN1N5712UB/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JAN1N5712UB/TR.pdf
- Description:
- SMALL-SIGNAL SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:2,380
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Product details
Overview
JAN1N5712UB/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with 20 V breakdown voltage, 1.0 V forward voltage at 35 mA, and 16 V working peak reverse voltage - used in high-reliability RF detector, sample-and-hold, and low-leakage clamping circuits.
For engineers reviewing the JAN1N5712UB/TR datasheet, JAN1N5712UB/TR pinout, JAN1N5712UB/TR application, or JAN1N5712UB/TR equivalent, this page delivers verified electrical specs, MIL-PRF-19500/444 qualification status, thermal resistance (100 °C/W), junction temperature range (–65 to +150 °C), and polarity-specific packaging details for design-in assurance.
Technical Context
This device implements a low-barrier Schottky junction with 100 ps minority carrier lifetime, enabling fast switching and minimal reverse recovery charge. Its ceramic hermetic package ensures stable performance under thermal cycling and radiation exposure typical of aerospace and defense systems.
Rated for 75 mA average rectified output current at +130 °C case temperature, it derates linearly to zero at +150 °C. The gold-plated nickel terminals support reliable soldering per EIA-418D tape-and-reel delivery and withstand 260 °C for 10 s.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 20 V @ 10 µA - defines maximum non-destructive reverse bias before avalanche conduction begins. |
| Working Peak Reverse Voltage VRWM | 16 V - maximum continuous reverse voltage usable in clamping or detection without exceeding leakage limits. |
| Forward Voltage VF | 1.0 V @ 35 mA - enables low-loss signal rectification in RF envelope detectors and precision sampling circuits. |
| Reverse Leakage IR | 150 nA @ 16 V - supports ultra-low-power hold capacitors in sample-and-hold stages with minimal droop. |
| Junction Temperature Range | –65 to +150 °C - qualified for operation in extended environmental conditions including space-grade thermal vacuum cycles. |
| Thermal Resistance RθJSP | 100 °C/W - determines temperature rise above solder pad under steady-state power dissipation; critical for thermal margin analysis. |
Pinout & Package
Ceramic surface-mount UB package with two terminals: base-mounted anode and cathode pads on opposite edges of a 3.25 mm × 2.74 mm ceramic body. Gold-plated nickel terminations ensure solderability and corrosion resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 | Anode | Primary current entry point; connects to RF input or signal source in detector applications. |
| Pad 2 | Cathode | Current exit path; ties to ground reference or load in unidirectional configuration (no suffix = unidirectional). |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 Qualified (JAN level) | Meets screening, testing, and traceability requirements for Class S spaceflight and mission-critical avionics. |
| Low Reverse Leakage (150 nA @ 16 V) | Minimizes capacitor discharge error in precision analog sample-and-hold circuits over temperature. |
| Ceramic Hermetic Encapsulation | Provides immunity to moisture ingress and long-term parameter stability in harsh environments. |
| 100 ps Minority Carrier Lifetime | Enables sub-nanosecond switching response suitable for UHF detector and mixer applications. |
Applications
| RF Detector Circuit | Sample-and-Hold Amplifier |
|---|---|
Use Scenario: Demodulating AM signals in L-band radar receivers where signal integrity must be preserved across –55 to +125 °C. IC Role / Device Role / Timing Role: Unidirectional Schottky detector diode converting RF envelope to baseband DC voltage. Use Value: 1.0 V VF at 35 mA ensures minimal insertion loss and high sensitivity without active biasing. |
Use Scenario: Holding analog sensor outputs during ADC conversion in radiation-hardened telemetry modules. IC Role / Device Role / Timing Role: Low-leakage clamp diode isolating hold capacitor from input during acquisition phase. Use Value: 150 nA IR at 16 V limits voltage droop to <1 mV/s on 100 pF hold capacitor. |
| Low-Power Clamping Network | Military Power Supply Protection |
Use Scenario: Protecting op-amp inputs against transient overvoltage in field-deployable test equipment. IC Role / Device Role / Timing Role: Fast-turn-on Schottky clamp limiting input swing to ±0.4 V beyond rail. Use Value: 100 ps τ enables clamping response faster than most CMOS input protection structures. |
Use Scenario: Input rectification stage in airborne DC-DC converters operating at –65 to +150 °C ambient. IC Role / Device Role / Timing Role: Primary rectifier in low-current auxiliary supply feeding control logic. Use Value: 75 mA IO rating at +130 °C supports sustained operation without derating in convection-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5712UR-1 | Same electrical specs but DO-213AA plastic package; not hermetically sealed. | Lacks MIL-PRF-19500/444 qualification; unsuitable for space or high-reliability defense use. | Select only for commercial-grade cost-sensitive designs where hermeticity is not required. |
| JANTX1N5712UB | Identical ceramic UB package and electrical parameters; differs only in screening level (JANTX vs JAN). | Higher screening per MIL-PRF-19500/444 - includes additional burn-in and parametric testing. | Choose when full JANTX-level reliability evidence (e.g., lot traceability, failure analysis reports) is mandated. |
Compared with 1N5712UR-1 and JANTX1N5712UB, the JAN1N5712UB/TR provides the baseline military qualification level (JAN) with verified hermeticity and thermal robustness - making it optimal for programs requiring documented compliance without premium JANTX screening overhead.
Availability
JAN1N5712UB/TR is available at Aetrix Electronics and suitable for RF detector circuits, sample-and-hold amplifiers, and low-power clamping networks requiring stable component supply across extended temperature and radiation environments.
Supply support for JAN1N5712UB/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N5712UB/TR belongs to Microsemi's legacy military diode product line, engineered specifically for applications demanding hermetic packaging, extended temperature operation, and MIL-PRF-19500/444 compliance.
FAQ
What is the polarity configuration of JAN1N5712UB/TR?
The JAN1N5712UB/TR is a unidirectional Schottky diode - no polarity suffix (e.g., CA, CC, D) is present in the part number, confirming standard anode-to-cathode conduction. This matches JEDEC 1N5712 functionality and is validated in the Electrical Characteristics table on page 3 of T4-LDS-0040-2.
Is JAN1N5712UB/TR RoHS compliant?
Yes, JAN1N5712UB/TR is RoHS compliant by design per the manufacturer's documentation in the FEATURES section of T4-LDS-0040-2. Compliance applies to the ceramic UB package and gold/nickel terminal plating, with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances above threshold limits.
What does the "TR" suffix indicate in JAN1N5712UB/TR?
The "TR" suffix denotes tape-and-reel packaging per EIA-418D standards, confirmed in the MECHANICAL and PACKAGING section of T4-LDS-0040-2. JAN1N5712UB/TR is supplied in standardized reels for automated SMT placement, with quantity and reel size determined by factory consultation.
Can JAN1N5712UB/TR replace JAN1N5711UB in a design?
No - JAN1N5712UB/TR has lower breakdown (20 V vs. 70 V) and higher forward current rating (75 mA vs. 33 mA), making it unsuitable as a direct substitute without circuit revalidation. The JAN1N5711UB/TR remains required where >50 V VRWM or tighter leakage (<200 nA) is specified.
What is the thermal resistance value for JAN1N5712UB/TR?
JAN1N5712UB/TR has a junction-to-solder-pad thermal resistance (RθJSP) of 100 °C/W, as specified in the MAXIMUM RATINGS table on page 1 of T4-LDS-0040-2. This value is measured under standard PCB mounting conditions and is essential for calculating junction temperature rise under load.
JAN1N5712UB/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
- Operating Temperature - Junction:
- -65°C ~ 150°C
JAN1N5712UB/TR FAQ
1.How can I place an order for JAN1N5712UB/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5712UB/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5712UB/TR reliable?
The price and inventory of JAN1N5712UB/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5712UB/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5712UB/TR?
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4.How is shipping managed for JAN1N5712UB/TR?
JAN1N5712UB/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5712UB/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5712UB/TR?
For technical support, including JAN1N5712UB/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5712UB/TR requirements.
6.How does Aetrix verify that JAN1N5712UB/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5712UB/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5712UB/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5712UB/TR?
All JAN1N5712UB/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5712UB/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5712UB/TR part is unused and in its original packaging.
Return procedure for JAN1N5712UB/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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