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Microchip Technology JAN1N5802
- Part No.:
- JAN1N5802
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- A, Axial
- Datasheet:
-
JAN1N5802.pdf
- Description:
- DIODE GEN PURP 50V 2.5A AXIAL
- Quantity:
- Payment:
- Shipping:
Inventory:7,329
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Product details
Overview
JAN1N5802 from Microsemi is a military-qualified ultrafast recovery glass rectifier diode rated for 2.5 A average forward current at 75 °C lead temperature, 50 V working peak reverse voltage, and 25 ns reverse recovery time; it features voidless hermetic glass packaging with Category 1 metallurgical bonds and is used in high-reliability power conversion stages of aerospace power supplies and radiation-hardened DC/DC modules.
For engineers reviewing the JAN1N5802 datasheet, JAN1N5802 pinout, JAN1N5802 application, or JAN1N5802 equivalent, this page delivers verified electrical ratings, thermal resistance (36 °C/W junction-to-lead), cathode-band polarity marking, MELF-style "A" package dimensions, and direct alternatives qualified to MIL-PRF-19500/477.
Technical Context
This device operates as a unidirectional power rectifier with controlled avalanche capability up to 175 W peak reverse power and low thermal resistance enabled by tungsten slugs and hard-glass encapsulation. Its 25 ns trr and 0.875 V forward voltage at 1 A support high-frequency switching in regulated DC outputs.
The JAN1N5802 uses quadruple-layer passivation and tin/lead terminations over nickel-copper, meeting MIL-PRF-19500/477 Level JAN qualification. It exhibits 1 µA max reverse leakage at 50 V and 25 °C, and withstands 260 °C soldering for 10 seconds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in DC bus clamping. |
| IO1 @ TL=75°C | 2.5 A - Sustained average forward current with 3/8″ lead length; sets baseline output capacity in conduction-limited designs. |
| trr | 25 ns - Time to recover blocking state after forward conduction; enables >1 MHz switching in SMPS topologies. |
| VF @ IF=1 A | 0.875 V - Forward voltage drop determining conduction loss and thermal load at nominal load. |
| RθJL | 36 °C/W - Junction-to-lead thermal resistance; critical for estimating die temperature rise under pulsed or steady-state conditions. |
| C @ VR=10 V | 25 pF - Junction capacitance at 10 V reverse bias; impacts high-frequency noise coupling and snubber design. |
| IFSM | 35 A - Non-repetitive surge current rating for 8.3 ms pulses; supports inrush and fault-current handling without failure. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "A" (D-5A) MELF-style package with tungsten slugs; cathode indicated by blue band on body; weight 340 mg; dimensions BD = 0.065–0.085″, BL = 0.125–0.250″, LD = 0.027–0.032″, LL = 0.700–1.30″.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source or transformer secondary; must handle 35 A surge and 2.5 A continuous current. |
| Cathode | Forward current exit point | Marked by blue band; connects to output filter capacitor or load; defines polarity-sensitive placement on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion; ensures >20-year operational life in vacuum or humid space environments. |
| Category 1 metallurgical bond | Eliminates interfacial delamination under thermal cycling; validated for -65 °C to +175 °C operation per MIL-STD-750. |
| Controlled avalanche capability | Withstands 175 W peak reverse power without degradation; enables robust overvoltage protection in unregulated inputs. |
| Quadruple-layer passivation | Reduces surface leakage and enhances long-term stability of reverse characteristics in high-radiation fields. |
| Inherent radiation hardness | Qualified per MicroNote 050; no parameter shift observed at 100 krad(Si) total ionizing dose in proton and gamma testing. |
Applications
| Aerospace Power Conversion | Military DC/DC Modules |
|---|---|
Use Scenario: Rectifying transformer secondary output in triple-redundant 28 VDC power distribution units aboard satellites. IC Role / Device Role / Timing Role: Ultrafast power rectifier enabling >500 kHz PWM frequency while maintaining <1.2 V conduction loss. Use Value: 25 ns trr minimizes switching losses; hermetic seal prevents performance drift during 15-year orbital missions. |
Use Scenario: Input-stage rectification in vehicle-mounted 270 VDC-to-28 VDC converters for avionics subsystems. IC Role / Device Role / Timing Role: High-surge-capable rectifier handling engine-start transients and EMI-filtered line surges. Use Value: 35 A IFSM and controlled avalanche prevent latch-up during 100 V line spikes; JAN qualification ensures lot traceability. |
| Radiation-Hardened Instrumentation | High-Reliability Industrial UPS |
Use Scenario: Front-end AC/DC conversion in nuclear reactor monitoring sensors exposed to neutron flux. IC Role / Device Role / Timing Role: Radiation-tolerant rectifier maintaining stable VF and IR across 10⁵ rad(Si) exposure. Use Value: Inherent radiation hardness eliminates need for shielding or derating; 1 µA IR at 50 V ensures signal integrity. |
Use Scenario: Output rectification in modular 48 V telecom UPS systems requiring zero downtime and field-replaceable modules. IC Role / Device Role / Timing Role: Low-thermal-resistance rectifier mounted directly to heatsink via tungsten slug interface. Use Value: 36 °C/W RθJL enables 2.5 A operation without forced air; voidless glass prevents moisture-induced failure in humid data centers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N5802 | Same electrical specs but qualified to JANTX level (higher screening, tighter parametric limits). | Required for programs mandating JANTX-level reliability documentation and extended burn-in. | Select when full MIL-PRF-19500/477 JANTX test reports and lot traceability are contractually required. |
| 1N5802US | Identical die and glass package, but in surface-mount MELF configuration (no leads); same VRWM, trr, VF. | Suitable for automated SMT assembly; requires reflow profile validation due to glass-body thermal mass. | Choose for space-constrained PCB layouts where through-hole mounting is impractical and reflow compatibility is confirmed. |
Compared with JANTX1N5802 and 1N5802US, the JAN1N5802 provides baseline JAN-level qualification with through-hole leads optimized for manual prototyping and legacy board repair, while retaining identical core electrical performance and hermetic reliability.
Availability
JAN1N5802 is available at Aetrix Electronics and suitable for aerospace power conversion, military DC/DC modules, and radiation-hardened instrumentation requiring stable component supply across extended product lifecycles.
Supply support for JAN1N5802 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The JAN1N5802 belongs to Microsemi's military-qualified ultrafast rectifier family designed specifically for mission-critical power conversion where failure is not an option-emphasizing hermeticity, radiation tolerance, and MIL-PRF-19500 compliance.
FAQ
What is the maximum junction temperature rating for JAN1N5802?
The JAN1N5802 has a junction and storage temperature range of -65 °C to +175 °C per MIL-PRF-19500/477. This rating is validated across all JAN-level screening tests and enables operation in extreme environmental conditions typical of missile guidance systems and satellite power units. The 175 °C limit directly supports thermal design margins when using the 36 °C/W RθJL value in conjunction with measured lead temperature.
Does JAN1N5802 have RoHS-compliant variants?
No-JAN1N5802 is a non-RoHS compliant part, as indicated by the absence of the "e3" suffix in its nomenclature. RoHS-compliant versions (e.g., 1N5802e3) are only offered in commercial-grade variants per the T4-LDS-0211 datasheet. The JAN1N5802 retains traditional tin/lead terminations to ensure solder joint reliability under thermal cycling and mechanical shock per MIL-STD-883.
How is polarity marked on the JAN1N5802 package?
Polarity is marked by a distinct blue band on the glass body, indicating the cathode terminal. This band aligns with industry-standard diode marking conventions and is visible under standard optical inspection. The anode is the unmarked end, and both terminals are tin/lead plated over nickel-copper for solderability and corrosion resistance in harsh environments.
What does "Category 1 metallurgical bond" mean for JAN1N5802?
"Category 1 metallurgical bond" refers to a diffusion-bonded interface between the silicon die and tungsten slug that meets MIL-STD-750 Method 2035 requirements for shear strength, intermetallic formation control, and thermal-cycle survivability. This bond type prevents delamination during repeated thermal excursions from -65 °C to +175 °C, ensuring long-term reliability in spacecraft and airborne electronics where JAN1N5802 is deployed.
Can JAN1N5802 be used in place of 1N5802 in commercial designs?
JAN1N5802 meets all electrical specifications of the commercial 1N5802 but adds rigorous military-level screening, hermeticity verification, and lot traceability per MIL-PRF-19500/477. While functionally interchangeable in most circuits, JAN1N5802 incurs higher cost and longer lead times; it should be selected only when contractual or system-level reliability requirements mandate JAN qualification-not for generic commercial use.
JAN1N5802 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- A, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 2.5A
- Voltage - Forward (Vf) (Max) @ If:
- 975 mV @ 2.5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 50 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Through Hole
- Supplier Device Package:
- A, Axial
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5802 FAQ
1.How can I place an order for JAN1N5802 through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5802 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5802 reliable?
The price and inventory of JAN1N5802 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5802 is usually 5 days.
3.What payment methods are accepted for JAN1N5802?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5802 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5802?
JAN1N5802 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5802 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5802?
For technical support, including JAN1N5802 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5802 requirements.
6.How does Aetrix verify that JAN1N5802 is sourced from the original manufacturer or authorized distributors?
All JAN1N5802 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5802 meets industry standards.
7.What is the process for return or replacement of JAN1N5802?
All JAN1N5802 units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5802, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5802 part is unused and in its original packaging.
Return procedure for JAN1N5802:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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